A semiconductor structure having a substrate with a surface layer including strained silicon. The surface layer has a first region with a first thickness less than a second thickness of a second region. A gate dielectric layer is disposed over a portion of at least the first surface layer region. ...http://www.google.com.au/patents/US20060266997?utm_source=gb-gplus-sharePatent US20060266997 - Methods for forming semiconductor structures with differential surface layer thicknesses
