A method for forming a V-shaped gate electrode on a semiconductor substrate includes the following steps: A first gate opening is formed in a first resist between a source and a drain formed on a semiconductor substrate, and dummy openings are formed near both sides of the first gate opening. ...http://www.google.com.au/patents/US5804474?utm_source=gb-gplus-sharePatent US5804474 - Method for forming a V-shaped gate electrode in a semiconductor device, and the structure of the electrode 
