Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from trisilane and GeH4. The amorphous SiGe layers are recrystallized over silicon by melt or solid phase epitaxy...http://www.google.com.au/patents/US20050054175?utm_source=gb-gplus-sharePatent US20050054175 - Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates
