The present invention includes methods and apparatus as described in the claims. Briefly, semiconductor diodes having a low forward conduction voltage drop, a low reverse leakage current, a high voltage capability and avalanche energy capability, suitable for use in integrated circuits as well as for...http://www.google.com.au/patents/US6537921?utm_source=gb-gplus-sharePatent US6537921 - Vertical metal oxide silicon field effect semiconductor diodes
