Transistor fabrication methods are provided which are suitable, for example, for transistors with current carrying elements above a semiconductor substrate. Only few mask alignments define critical dimensions such as the channel length of a MOS transistor. In one embodiment in which the channel region...http://www.google.com.au/patents/US5348897?utm_source=gb-gplus-sharePatent US5348897 - Transistor fabrication methods using overlapping masks
