A high-quality, highly reliable, composite dielectric layer for a semiconductor device. The composite dielectric layer is formed by nitriding a silicon surface, forming an oxide layer on the nitrided silicon surface, and then annealing the nitrided-silicon surface and the oxide in an oxygen ambient....http://www.google.com.au/patents/US5258333?utm_source=gb-gplus-sharePatent US5258333 - Composite dielectric for a semiconductor device and method of fabrication
