The present invention is related to an enhanced high density Read-Only-Memory (ROM) device with select gate. A thin oxide layer is deposited on the ROM cell matrix and it is extended to the select lines which is on the top and bottom side of the ROM cell matrix to form the select gate. The...http://www.google.com.au/patents/US5777919?utm_source=gb-gplus-sharePatent US5777919 - Select gate enhanced high density read-only-memory device
