A process for forming a silicon-containing amorphous film on a substrate which comprises (a) step of depositing a silicon-containing amorphous film on said substrate and (b) step of irradiating plasma of inert gas to said silicon-containing amorphous film on deposited on the substrate in said step (a),...http://www.google.com.au/patents/US5288658?utm_source=gb-gplus-sharePatent US5288658 - Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma
