A TFT is fabricated by providing on a substrate (10), and over a gate (12), a sequentially formed multi-layer structure consisting of a gate insulator layer (14), an intrinsic semiconductor, e.g. a-Si or polysilicon, layer (16) for the channel, a doped semiconductor, e.g. n type a-Si or polysilicon,...http://www.google.com.au/patents/US5047360?utm_source=gb-gplus-sharePatent US5047360 - Method of manufacture thin film transistors
