The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers...http://www.google.com.au/patents/US6960479?utm_source=gb-gplus-sharePatent US6960479 - Stacked ferroelectric memory device and method of making same
