A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to establish a temperature gradient...http://www.google.com.au/patents/US7678195?utm_source=gb-gplus-sharePatent US7678195 - Seeded growth process for preparing aluminum nitride single crystals
