A method is provided for fabricating a semiconductor on insulator (SOI) device. The method includes, in one embodiment, providing a monocrystalline silicon substrate having a monocrystalline silicon layer overlying a monocrystalline silicon substrate and separated therefrom by a dielectric layer. A well...http://www.google.com.au/patents/US7741164?utm_source=gb-gplus-sharePatent US7741164 - Method for fabricating SOI device
