A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in the quantum well layer is in excess of 2% against...http://www.google.com.au/patents/US6207973?utm_source=gb-gplus-sharePatent US6207973 - Light emitting devices with layered III-V semiconductor structures
