Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular,...http://www.google.com.au/patents/US7790556?utm_source=gb-gplus-sharePatent US7790556 - Integration of high k gate dielectric
