Methods are provided for producing a hydrogen-terminated silicon wafer surface with high stability against oxidation. The silicon wafer is cleaned with ammonium hydroxide/hydrogen peroxide/water, etched with high purity, heated dilute hydrofluoric acid, rinsed in-situ with ultrapure water at room temperature,...http://www.google.com.au/patents/US6620743?utm_source=gb-gplus-sharePatent US6620743 - Stable, oxide-free silicon surface preparation
