A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD)...http://www.google.com.au/patents/US6449132?utm_source=gb-gplus-sharePatent US6449132 - Dielectric gap material for magnetoresistive heads with conformal step coverage
