There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped...http://www.google.com.au/patents/US6507069?utm_source=gb-gplus-sharePatent US6507069 - Semiconductor device and method of manufacture thereof
