A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly composed of a material selected from titanium oxide, zirconium oxide and hafnium oxide, and in which compressive...http://www.google.com.au/patents/US20020093046?utm_source=gb-gplus-sharePatent US20020093046 - Semiconductor device and its production process
