A method of forming a high quality silicon on insulator semiconductor device using wafer bonding. The annealing time for the wafer bonding process is substantially reduced through the use of a rapid thermal annealer, thereby resulting in minimizing the redistribution of the doping concentration resulting...http://www.google.com.au/patents/US4771016?utm_source=gb-gplus-sharePatent US4771016 - Using a rapid thermal process for manufacturing a wafer bonded soi semiconductor
