A method for enhancing adhesion of photo-resist to silicon nitride surfaces is disclosed. An oxidation process is first performed on the surface of the semiconductor wafer using ozone-dissolved deionized water to transform most of the dangle bonds and Si-N bonds on the surface of the silicon nitride...http://www.google.com.au/patents/US6251804?utm_source=gb-gplus-sharePatent US6251804 - Method for enhancing adhesion of photo-resist to silicon nitride surfaces
