A method of forming a silicon-germanium epitaxial layer using dichlorosilane as a silicon source gas. A semiconductor seed layer (15) is formed on a portion of a semiconductor layer (12) and on a portion of a layer of dielectric material (13). The semiconductor seed layer (15) provides nucleation sites...http://www.google.com.au/patents/US5273930?utm_source=gb-gplus-sharePatent US5273930 - Method of forming a non-selective silicon-germanium epitaxial film
