A surface layer (10), for example oxide, is provided on a first major surface (2) of a semiconductor body (1). A masking layer (11) having at least one window (12) is defined on the surface layer (10). The surface layer (10) and the semiconductor body (1) are etched through the window (12) to define...http://www.google.com.au/patents/US5093283?utm_source=gb-gplus-sharePatent US5093283 - Method of manufacturing a semiconductor device