Disclosed is a CNT technology that overcomes the intrinsic ambipolar properties of CNTFETs. One embodiment of the invention provides either a stable p-type CNTFET or a stable n-type CNTFET. Another embodiment of the invention provides a complementary CNT device. In order to overcome the ambipolar properties...http://www.google.com.au/patents/US20070102747?utm_source=gb-gplus-sharePatent US20070102747 - COMPLEMENTARY CARBON NANOTUBE TRIPLE GATE TECHNOLOGY
