A part of the gate of a FINFET is replaced with a stress material to apply stress to the channel of the FINFET to enhance electron and hole mobility and improve performance. The FINFET has a SiGe/Si stacked gate, and before silicidation the SiGe part of the gate is selectively etched to form a gate gap...http://www.google.com.au/patents/US7314802?utm_source=gb-gplus-sharePatent US7314802 - Structure and method for manufacturing strained FINFET
