A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer...http://www.google.com.au/patents/US20030111730?utm_source=gb-gplus-sharePatent US20030111730 - Semiconductor device and method manufacuring the same
