A method for fabricating a capacitor of a semiconductor device, comprising the steps of forming a seed layer over a semiconductor substrate, and forming multiple oxide layers on the seed layer, wherein wet etching of the multiple oxide layers decreases as the layers go up. A first opening is formed by...http://www.google.com.au/patents/US6383865?utm_source=gb-gplus-sharePatent US6383865 - Method for fabricating a capacitor in a semiconductor device
