An integrated circuit comprises complementary FET having channels extending on the surface of a substrate and on the surface of a well in the substrate and gates formed in a layer of polycrystalline silicon insulated from the substrate and from each said well. A floating diode, i.e. connected neither...http://www.google.com.au/patents/US4041522?utm_source=gb-gplus-sharePatent US4041522 - Integrated circuit and manufacture thereof
