WO2016202539A1 - Method for producing a metallic contact face by using a shaped metal body supported on one side, a power semiconductor with the metallic contact face and a bond shield for producing the metallic contact face - Google Patents

Method for producing a metallic contact face by using a shaped metal body supported on one side, a power semiconductor with the metallic contact face and a bond shield for producing the metallic contact face Download PDF

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Publication number
WO2016202539A1
WO2016202539A1 PCT/EP2016/061747 EP2016061747W WO2016202539A1 WO 2016202539 A1 WO2016202539 A1 WO 2016202539A1 EP 2016061747 W EP2016061747 W EP 2016061747W WO 2016202539 A1 WO2016202539 A1 WO 2016202539A1
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WIPO (PCT)
Prior art keywords
shaped metal
metal body
carrier film
face
power semiconductor
Prior art date
Application number
PCT/EP2016/061747
Other languages
French (fr)
Inventor
Frank Osterwald
Holger Ulrich
Jacek Rudzki
Lars Paulsen
Martin Becker
Frank SCHEFUSS
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Danfoss Silicon Power Gmbh
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Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2016202539A1 publication Critical patent/WO2016202539A1/en

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Definitions

  • Contacting the electric conductor preferably takes place using the first shaped metal body section arranged on the carrier film. Contacting can, however, also take place on the second shaped metal body section, to the extent that sufficient space is available for this.
  • the deformation region is formed as a web.
  • a bond shield that exhibits a carrier film and a shaped metal body arranged on the carrier film.
  • the shaped metal body comprises a first shaped metal body section arranged on the carrier film and a second shaped metal body section projecting beyond the face of the carrier film.
  • the first shaped metal body section is connected to the second shaped metal body section via a deformation region.
  • the deformation region is formed as a web.
  • Tying an electric conductor can take place as mentioned above.
  • Fig. 1 shows a first power semiconductor having an inventive improvement of the bond shield prior to sintering
  • Fig. 2 shows the power semiconductor from Fig. 1 having the inventive improvement of the bond shield after sintering
  • the wire terminal could of course also be bonded directly to the central region, sintered on the control contact, of the shaped metal body 30 ' .
  • the shaped metal body is arranged circumferentially overlapping on the carrier film.
  • the shaped metal body should then not be connected circumferentially to the carrier film by an adhesion layer.
  • What is decisive for the inventive improvement of the prior art is the sufficient deformability of the shaped metal body 30' that is not circumferentially firmly connected to the carrier film.
  • Fig. 4 shows the schematic sequence of a first method for producing a power semiconductor according to the invention.
  • a carrier film 20 is applied on a power semiconductor 10, a control or power contact of the power semiconductor being left uncovered by the carrier film. Thus the control or power contact remains free from the carrier film 20.
  • a shaped metal body 30 ' is arranged on the carrier film 20 such that a first shaped metal body section is arranged on the carrier film and a second shaped metal body section is located with its free end above the control or power contact.
  • the second shaped metal body section projects beyond the face of the carrier film 20 that forms a single- sided support for the shaped metal body 30 ' .
  • a bond shield can be created by connecting a carrier film 20 to a shaped metal body 30 ' arranged there above.
  • Fig. 5 shows the schematic sequence of this second method for producing a metallic contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor.
  • the bond shield is applied on the power semiconductor so that the shaped metal body section, projecting beyond the carrier film, is arranged above a control or power contact.
  • the section, projecting beyond the face of the carrier film, of the shaped metal body with the control or power contact is deformed and connected to the control or power contact.

Abstract

A method for producing a metallic contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor (10), having the following steps: applying a carrier film (20) on the power semiconductor (10) while leaving uncovered the power contacts of the power semiconductor (10); arranging a shaped metal body (30') on the carrier film (20) so that a first section arranged on the carrier film (20) forms a contact face for tying a wire or a ribbon and a second section of the shaped metal body projects above a power contact beyond the face of the carrier film (20), the carrier film (20) forming a single-sided support for the section, projecting beyond the face of the carrier film (20), of the shaped metal body (30'); and connecting the section of the shaped metal body (30') projecting beyond the face of the carrier film (20) to the power contact while deforming the shaped metal body (30'). Alternatively, a method for producing a metallic contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor (10), having the following steps: applying a bond shield having a carrier film (20) and a shaped metal body (30') arranged on the carrier film (20), wherein the shaped metal body (30') comprises a first shaped metal body section arranged on the carrier film (20) and a second shaped metal body section projecting beyond the face of the carrier film (20), and the first shaped metal body section is connected to the second shaped metal body section via a deformation region on the power semiconductor (10), so that the shaped metal body section projecting beyond the face of the carrier foil (20) is arranged above a control or power contact of the power semiconductor (10); and connecting the shaped metal body section, projecting beyond the face of the carrier film (20), with the control or power contact while deforming the shaped metal body (30'). Connecting the section of the shaped metal body (30') projecting beyond the face of the carrier film (20) to the power contact takes place in particular via silver sintering.

Description

METHOD FOR PRODUCING A METALLIC CONTACT FACE BY USING A SHAPED METAL BODY SUPPORTED ON ONE SIDE, A POWER SEMICONDUCTOR WITH THE METALLIC CONTACT FACE AND
A BOND SHIELD FOR PRODUCING THE METALLIC CONTACT FACE
The invention relates to a method for producing a metallic contact face, suitable for tying an 5 electric conductor to it, for contacting a power semiconductor. The invention further relates
to a bond shield for use with this method and a semiconductor manufactured using the
method.
Contacting power semiconductors usually takes place by means of wires or ribbons that are 10 bonded to a power semiconductor metallization delimited by passivation.
To manufacture such a power semiconductor metallization, the power semiconductor is usually covered with a film that is called a bond shield comprising an organic carrier film and structured shaped metal bodies. Here recesses are provided in the carrier film of such a bond 15 shield, that are straddled by the shaped metal bodies. Thus the shaped metal bodies rest on the carrier film at the edge of the recesses and are preferably immobilized thereon.
The shaped metal bodies preferably comprises copper (Cu) and are advantageously connected to the respective power semiconductor terminal face in an electrically conducting manner by 20 silver sintering.
A typical method procedure provides for a bond shield to be initially coated with a joining material, e.g. silver sinter paste, on its side facing the power semiconductor contact face.
Then the bond shield is fastened to the power semiconductor by means of an adhesion layer 25 likewise facing the power semiconductor and the shaped metal bodies, facing away from the
power semiconductor, of the bond shield are sintered to the power semiconductor terminal faces in a pressure-sintering step in which the shaped metal bodies pass through the recesses.
Finally the shaped metal bodies are contacted in a further step, for example by means of wire bonding, in particular Cu wire bonding.
30
This method always encounters problems when the control contact terminal face of the power semiconductor is (very) small. Since the thickness of the carrier films including their
adhesion layer can possibly lie approximately in the order of magnitude of the lateral extent of the shaped metal body, the sintering step is accompanied by the risk that the necessary deformation of the shaped metal body for bridging the height difference between the surface of the carrier film and the surface of the power semiconductor is not achieved or is only achieved to a limited extent. If contacting is achieved at all, the quality of the sinter connection resulting from the known method is insufficient since the shaped metal body will connect to the control terminal of the power semiconductor in the centre of the recess only on an extremely small area.
The object of the invention is therefore to provide a method for producing a metallization on the terminal face, in particular of the control terminal of a power semiconductor, that creates a high-quality sinter connection between metallization and power semiconductor terminal face.
According to the invention, this object is achieved by the method having the features of Claim 1, by the power semiconductor having the features of Claim 5, the bond shield having the features of Claim 7 and the method according to Claim 9. The sub-claims in each case reflect advantageous designs of the invention.
The basic idea of the invention is to arrange the carrier film and the shaped metal body relative to each other such that the carrier film forms an support for the shaped metal body only on one side. Thus the shaped metal body comprising a first section that is supported lying on the carrier film, and a second section that cantilevers with its free end beyond the edge of the carrier film. According to the invention, the shaped metal body is supported only on one side. In contrast to the prior art, the shaped metal body thus does not straddle any areas left free by the carrier film. Relative to the shaped metal body, the carrier film correspondingly does not form a two-sided support. Here it is possible that the shaped metal body extends with its free end beyond a single edge of the carrier film. However, the shaped metal body can also be supported on one side on two neighbouring edges as long as an end of the shaped metal body that extends beyond the face of the carrier film remains free from any support. Support of the shaped metal body at its one end and at an end situated opposite this end is expressly not intended to be part of the invention.
The problem that is known from the prior art is thus solved in that in particular the relative by small shaped metal bodies are connected to the carrier film not in all sections of their peripheral face in an overlapping fashion. In the most extreme case, the shaped metal body is connected to the carrier film so as to be suspended freely and only by means of a small web on one side.
According to the invention, a method for producing a metallic contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor is provided. It exhibits the following steps:
1. applying a carrier film on the power semiconductor while leaving uncovered the power contacts of the power semiconductor;
2. arranging a shaped metal body on the carrier film by forming a first shaped metal body section arranged on the carrier film and a second shaped metal body section projecting above a control or power contact beyond the face of the carrier film, the carrier film forming a single-sided support for the section, projecting beyond the face of the carrier film, of the shaped metal body; and
3. connecting the section of the shaped metal body projecting beyond the face of the carrier film, to the control or power contact while deforming the shaped metal body.
Connecting the section of the shaped metal body projecting beyond the face of the carrier film, to the power contact, takes place in particular via silver sintering.
Contacting the electric conductor preferably takes place using the first shaped metal body section arranged on the carrier film. Contacting can, however, also take place on the second shaped metal body section, to the extent that sufficient space is available for this.
The electric conductor is preferably formed as a wire or a ribbon.
As a tradable product, likewise a power semiconductor is claimed. According to the invention, it exhibits a control and a power contact and a carrier film that is arranged on the power semiconductor and leaves uncovered the control and/or power contact. On the carrier film, a shaped metal body is arranged comprising a first shaped metal body section arranged on the carrier film and a second shaped metal body section arranged above the control or power contact and connected thereto. The first shaped metal body section is connected to the second shaped metal body section via a deformation region bridging the carrier film.
According to a preferred design, the deformation region is formed as a web.
On top of this, a bond shield is claimed that exhibits a carrier film and a shaped metal body arranged on the carrier film. The shaped metal body comprises a first shaped metal body section arranged on the carrier film and a second shaped metal body section projecting beyond the face of the carrier film. The first shaped metal body section is connected to the second shaped metal body section via a deformation region. In particular the deformation region is formed as a web.
The provision of such a bond shield enables a particularly advantageous method for producing a metal contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor. To this end, at first the bond shield of inventive design is applied on the power semiconductor so that the shaped metal body section projecting beyond the carrier film is arranged above a control or power contact of a power semiconductor. Then the shaped metal body section, projecting beyond the face of the carrier film, is connected with the control or power contact while deforming the shaped metal body.
Tying an electric conductor can take place as mentioned above.
The invention is explained in more detail using preferred exemplary embodiments illustrated in the appended drawings, in which:
Fig. 1 shows a first power semiconductor having an inventive improvement of the bond shield prior to sintering;
Fig. 2 shows the power semiconductor from Fig. 1 having the inventive improvement of the bond shield after sintering;
Fig. 3 shows a second power semiconductor having the inventive improvement of the bond shield in the top view; Fig, 4 shows the schematic sequence of a first method for producing a metallic contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor; and
Fig, 5 shows the schematic sequence of a second method for producing a metallic contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor.
Fig. 1 shows a power semiconductor 10 whose power contact is covered by a shaped metal body 30 that is circumferentially connected to the carrier film 20. The shaped metal body is not yet sintered to the power contact. Likewise not yet sintered is the small control contact having, in its edge region, a shaped metal body 30' that rests only on one side on the carrier film 20. Fig. 2 shows the same structure after the sintering. The shaped metal body 30 that is sintered to the big power terminal was deformed by the sintering pressure such that its edge regions exhibit an S-shaped ramp. Due to the relative size of the shaped metal body, in its centre a large face is here securely sintered to the power contact of the power semiconductor. If the shaped metal body 30', too, would rest in its surrounding region on the carrier film, then there would exist the risk of a bad tying to the control terminal of the power semiconductor, since the circumferential S-shaped ramps would hardly leave a central region. In Fig. 2, however, the shaped metal body 30' is not tied circumferentially but applied, suspended freely, only on one side of the carrier film. Therefore, the shaped metal body 30' can snuggle well to the control terminal contacts and connect reliably.
Fig. 3 shows such a structure in the top view. Here, in an exemplary manner, tying of 30' by means of a small web is illustrated. By means of the small web, the section, tied on the control terminal of the power semiconductor, of the shaped metal body is connected to a section, for example intended for wire contacting, of the same shaped metal.
The wire terminal could of course also be bonded directly to the central region, sintered on the control contact, of the shaped metal body 30'. For producing such bond shields it can be advantageous that the shaped metal body is arranged circumferentially overlapping on the carrier film. However, the shaped metal body should then not be connected circumferentially to the carrier film by an adhesion layer. What is decisive for the inventive improvement of the prior art is the sufficient deformability of the shaped metal body 30' that is not circumferentially firmly connected to the carrier film.
Fig. 4 shows the schematic sequence of a first method for producing a power semiconductor according to the invention.
At first in a first method step 100, a carrier film 20 is applied on a power semiconductor 10, a control or power contact of the power semiconductor being left uncovered by the carrier film. Thus the control or power contact remains free from the carrier film 20. In a second step 110, a shaped metal body 30' is arranged on the carrier film 20 such that a first shaped metal body section is arranged on the carrier film and a second shaped metal body section is located with its free end above the control or power contact. Here the second shaped metal body section projects beyond the face of the carrier film 20 that forms a single- sided support for the shaped metal body 30'.
Finally, the section of the shaped metal body 30' projecting beyond the face of the carrier film 20 is deformed in a third step 120 such that it is connected to the control or power contact. As an alternative to this method, at first a bond shield can be created by connecting a carrier film 20 to a shaped metal body 30' arranged there above. Fig. 5 shows the schematic sequence of this second method for producing a metallic contact face, suitable for tying an electric conductor to it, for contacting a power semiconductor.
At first step 200, the bond shield is applied on the power semiconductor so that the shaped metal body section, projecting beyond the carrier film, is arranged above a control or power contact. In a second step 210, the section, projecting beyond the face of the carrier film, of the shaped metal body with the control or power contact is deformed and connected to the control or power contact. List of reference symbols
10 Power semiconductor
20 Organic carrier film having an adhesion layer
30 Shaped metal body for covering the power contact of the power semiconductor 30' Shaped metal body for covering the control contact of the power semiconductor

Claims

PATENT CLAIMS
1. A method for producing a metallic contact face, suitable for tying an electric
conductor to it, for contacting a power semiconductor (10), having the following steps:
- applying a carrier film (20) on the power semiconductor (10) while leaving uncovered a control or power contact of the power semiconductor (10),
- arranging a shaped metal body (30') on the carrier film (20) while forming a first shaped metal body section arranged on the carrier film (20) and a second shaped metal body section projecting above the control or power contact beyond the face of the carrier film (20), the carrier film (20) forming a single- sided support for the section, projecting beyond the face of the carrier film (20), of the shaped metal body (30'),
- connecting the section of the shaped metal body (30') projecting beyond the face of the carrier film (20) to the control or power contact while deforming the shaped metal body (30').
2. The method according to Claim 1, characterized in that connecting the section of the shaped metal body (30') projecting beyond the face of the carrier film (20) to the power contact takes place via silver sintering.
3. The method according to one of the preceding claims, characterized by contacting the electric conductor with the first shaped metal body section.
4. The method according to one of the preceding claims, characterized in that the electric conductor is a wire or a ribbon.
5. A power semiconductor (10) having
- a control and a power contact,
- a carrier film (20) that is arranged on the power semiconductor (10) and leaves uncovered the control and/or power contact,
- a shaped metal body (30') arranged on the carrier film (20), comprising a first shaped metal body section arranged on the carrier film (20) and a second shaped metal body section arranged above the control or power contact and connected thereto, the first shaped metal body section being connected to the second shaped metal body section via a deformation region bridging the carrier film (20).
6. The power semiconductor according to Claim 5, characterized in that the deformation region is formed as a web.
7. A bond shield having
- a carrier film (20) and
- a shaped metal body (30') arranged on the carrier film (20),
wherein
- the shaped metal body (30') comprising a first shaped metal body section
arranged on the carrier film (20) and a second shaped metal body section projecting beyond the face of the carrier film (20), and
- the first shaped metal body section is connected to the second shaped metal body section via a deformation region.
The bond shield according to Claim 7, characterized in that the deformation formed as a web.
9. A method for producing a metallic contact face, suitable for tying an electric
conductor to it, for contacting a power semiconductor (10), having the following steps:
- applying a bond shield according to one of Claims 7 and 8 on the power
semiconductor (10), so that the shaped metal body section projecting beyond the face of the carrier foil (20) is arranged above a control or power contact of the power semiconductor (10),
- connecting the shaped metal body section, projecting beyond the face of the carrier film (20), with the control or power contact while deforming the shaped metal body (30').
PCT/EP2016/061747 2015-06-19 2016-05-25 Method for producing a metallic contact face by using a shaped metal body supported on one side, a power semiconductor with the metallic contact face and a bond shield for producing the metallic contact face WO2016202539A1 (en)

Applications Claiming Priority (2)

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DE102015109856.3A DE102015109856A1 (en) 2015-06-19 2015-06-19 Method for producing a suitable for the connection of an electrical conductor metallic contact surface for contacting a power semiconductor, power semiconductor, bond buffer and method for producing a power semiconductor
DE102015109856.3 2015-06-19

Publications (1)

Publication Number Publication Date
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