WO2015126425A1 - Cover plate for defect control in spin coating - Google Patents
Cover plate for defect control in spin coating Download PDFInfo
- Publication number
- WO2015126425A1 WO2015126425A1 PCT/US2014/018054 US2014018054W WO2015126425A1 WO 2015126425 A1 WO2015126425 A1 WO 2015126425A1 US 2014018054 W US2014018054 W US 2014018054W WO 2015126425 A1 WO2015126425 A1 WO 2015126425A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- facing surface
- fluid
- working surface
- spin coating
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Definitions
- Techniques disclosed herein relate to spin coating systems and processes, including spin coating of semiconductor substrates.
- Spin coating has been used for decades as method to coat a flat surface with a thin layer of polymer, photo resist, or other compound.
- Spin coating is typically carried out by depositing a solvent solution, polymer solution, or other liquid material onto a flat substrate. The substrate is then rotated at an angular velocity sufficient to create a centrifugal force that causes the solution to flow outward toward the edge of the substrate, thereby coating the entire surface of the substrate. Excess solution is ejected from the edge of the substrate, and the remaining solution thins and hardens as the solvent evaporates, leaving a thin polymer film.
- Such spin coating is a routine step in photolithography used in semiconductor device manufacturing.
- a resist spin coating step is executed to form a uniform resist film on a semiconductor wafer.
- an exposure process typically involves exposing the resist film to light or other radiation through a mask that creates a latent line pattern.
- a developing step involves
- a semiconductor wafer or other substrate is rotated together with a spin chuck by a rotational drive mechanism.
- the wafer can be vacuum-fixed on the spin chuck or otherwise held.
- a resist nozzle positioned above the semiconductor wafer drops a resist solution onto the center of the wafer surface.
- the dropped resist solution spreads radially outward toward the circumference of the semiconductor wafer by centrifugal force as the wafer spins.
- spreading the resist across the entire wafer surface happens relatively quickly, the semiconductor wafer is continuously rotated (usually at a decreased rotational speed) for a period of time to spin off and dry the resist solution spread over the wafer surface.
- Such spin coating has been used extensively in the semiconductor industry, primarily to form a thin, uniform layer of photoresist polymer on the surface of a wafer as a preparatory step for further wafer processing.
- a common desire in semiconductor manufacturing and spin coating is to have a high throughput.
- a wafer can undergo multiple coating and developing steps. Accordingly, minimizing process time to complete each spin coating of a wafer can improve throughput. In other words, it is desirable to complete a spin coat or spin process in as little time as possible to increase a number of wafers that can be processed per unit of time.
- One challenge with increasing throughput is meeting uniformity and quality requirements.
- the drying time lasts substantially longer than the spreading time.
- One basic technique is to increase a rotational speed of the wafer, which in turn increases a fluid-flow speed across the surface of the wafer— the faster the wafer spins, the faster a liquid resist or other liquid chemical dries (solvent evaporates).
- the threshold for forming wind marks is based on a combination of diameter and angular velocity.
- the onset of wind marks is correlated with a specific value of a Reynolds number.
- the Reynolds number for spin coating uses the density of the air above the wafer, angular velocity of the wafer, radial position from the center of the wafer, and viscosity of the air to quantify inertial and viscous forces.
- the critical Reynolds number identifies the point at which instability occurs. Because of wind marks, the critical Reynolds number limits angular velocity based on an edge radius of a given wafer W.
- Techniques disclosed herein provide an apparatus and method of spin coating that inhibits the formation of wind marks and other defects from turbulent fluid-flow, thereby enabling higher rotational velocities and decreased drying times, while maintaining film uniformity.
- Techniques disclosed herein include a fluid-flow member, such as a cover or ring, positioned or suspended above a substrate holder, or rather, above the top surface of a wafer or other substrate.
- the fluid-flow member has a radial curvature that prevents wind marks during rotation of a wafer or other substrate.
- One embodiment includes a spin coating apparatus having a substrate holder configured to hold a substrate horizontally during a spin coating process, such as by using a vacuum chuck.
- the apparatus includes a liquid dispenser configured to dispense a liquid material onto a working surface of the substrate when the substrate is disposed on the substrate holder.
- the working surface is generally planar and located opposite to a bottom surface, of the substrate, that contacts the substrate holder.
- the apparatus includes a fluid-flow member having a substrate-facing surface. The fluid-flow member is configured to be positioned such that the substrate-facing surface is positioned vertically above the working surface of the substrate when the substrate is disposed on the substrate holder.
- At least a portion of the substrate-facing surface is curved such that a given vertical distance between the substrate-facing surface and the working surface varies radially relative to a given radial distance from the axis of rotation.
- the fluid-flow member suspended above is curved and thus a given height of the substrate-facing surface above the working surface depends on a given radius of the substrate.
- Another embodiment includes a method for manufacturing semiconductor devices. This method has multiple steps including positioning a substrate on a substrate holder.
- the substrate holder holds the substrate horizontally and has an axis of rotation.
- the substrate has a bottom surface that contacts the substrate holder, and a working surface opposite to the bottom surface.
- a fluid-flow member is positioned above the substrate holder.
- the fluid-flow member has a substrate-facing surface that is positioned vertically above the working surface at a predetermined average vertical distance or average height above the working surface. At least a portion of the substrate-facing surface is curved such that a given vertical distance between the substrate-facing surface and the working surface varies radially relative to a given radial distance from the axis of rotation.
- a liquid material is dispensed onto the working surface of the substrate via a liquid dispenser positioned above the substrate.
- the substrate and substrate holder are together spun via a rotation mechanism coupled to the substrate holder such that the liquid material spreads across the working surface of the substrate and then dries by action of rotation.
- the present invention can be embodied and viewed in many different ways.
- FIG. 1 is a cross-sectional view showing the general structure of a spin coating apparatus.
- FIG. 2 is a top plan view of a spin coating apparatus of FIG. 1 .
- FIG. 3 is an enlarged cross-sectional view of a fluid-flow member according to embodiments herein.
- FIG. 4 is an enlarged cross-sectional view of a fluid-flow member according to embodiments herein.
- FIG. 5 is a cross-sectional view of an alternative embodiment of a fluid-flow member as described herein.
- FIGS. 6A-6C are a top view of alternative embodiments of a fluid-flow member as described herein.
- FIG. 7 is a top view of an alternative embodiment of a fluid-flow member as described herein.
- FIGS. 8A-8B are a top view of an alternative embodiment of a fluid-flow member as described herein.
- FIG. 9 is a top view of an alternative embodiment of a fluid-flow member having an adjustable opening as described herein.
- FIG. 10 is a side view of an alternative embodiment of a fluid- flow member having an adjustable opening as described herein.
- FIG. 1 1 is an exploded perspective view of an alternative embodiment of a fluid-flow member having an adjustable opening as described herein.
- Operations described may be performed in a different order than the described embodiment. Various additional operations may be performed and/or described operations may be omitted in additional embodiments.
- substrate refers to the object being processed in accordance with the invention.
- the substrate may include any material portion or structure of a device, particularly a semiconductor or other electronics device, and may, for example, be a base substrate structure, such as a semiconductor wafer or a layer on or overlying a base substrate structure such as a thin film.
- substrate is not intended to be limited to any particular base structure, underlying layer or overlying layer, patterned or un-patterned, but rather, is contemplated to include any such layer or base structure, and any combination of layers and/or base structures.
- the description below may reference particular types of substrates, but this is for illustrative purposes only and not limitation.
- techniques disclosed herein provide an apparatus and method of spin coating that inhibits the formation of wind marks and other defects caused by turbulent fluid-flow, thereby enabling higher rotational velocities and decreased drying times, while also maintaining film uniformity.
- Techniques disclosed herein include a fluid-flow member, such as a cover, ring, or other air flow structure, positioned or suspended above a substrate holder or above a substrate disposed on the substrate holder.
- the fluid-flow member has a radial curvature selected to prevent wind marks and other effects of turbulent air flow during rotation of a wafer or other substrate.
- the fluid-flow member is positioned in close proximity to the substrate.
- the shape, size and position of the fluid-flow member assist in maintaining laminar fluid-flow (typically a solvent and air) across the surface of a wafer coated with a liquid material, and to speed drying times while maintaining uniformity of the coating both in thickness and coverage.
- FIG. 1 is a cross-sectional view showing the general structure of a resist coating unit (COT) 100 (spin coating apparatus).
- FIG. 2 is a cross- sectional top plan view showing the general structure of the resist coating unit (COT) 100 according to one embodiment of the invention.
- COT resist coating unit
- a circular cup (CP) is disposed at the center of the resist coating unit 100.
- a substrate holder 102 spin chuck
- the substrate holder 102 is rotated by a rotation mechanism, such as drive motor 103, while a substrate, such as a semiconductor wafer (hereinafter, referred to as "wafer") W, is vacuum- adsorbed on the substrate holder 102.
- a rotation mechanism such as drive motor 103
- wafer semiconductor wafer
- the drive motor 103 can be disposed in an opening in the CP, and can optionally include an elevation mechanism that causes the substrate holder 102 to move up-and-down.
- the elevation mechanism can be, for example, an air cylinder and include an up-and- down guide unit.
- the motor can include a cooling unit and be constructed of material advantageous to the spin coating process.
- the wafer W can be delivered to the substrate holder 102 by a holding member 109, as part of a wafer transfer mechanism (not shown).
- the up-and-down drive unit can lift the drive motor 103 and/or the substrate holder 102 upwards to receive wafer W.
- the cup CP moves up-and-down or separates and widens to allow wafer W to be placed on substrate holder 102.
- a liquid dispenser includes a resist nozzle 1 10 for supplying a resist solution onto the surface of the wafer W, and is connected to a resist supplier through a resist feed pipe 1 1 1 .
- the resist nozzle 1 10 can be removably attached to the leading end of a resist nozzle scan arm 1 12 through a nozzle holder 1 13.
- the resist nozzle scan arm 1 12 is mounted at the upper end portion of a vertical support member 1 15 that is horizontally movable on a guide rail 1 14 in one direction (Y direction). The resist nozzle scan arm 1 12 therefore moves in the Y direction together with the vertical support member 1 15 by a Y-direction drive mechanism (not shown).
- Resist nozzle 1 10 can be interchangeable with other resist nozzles of different types or sizes.
- a solvent atmosphere can be used to prevent the resist solution at the leading end of the nozzle from being solidified or deteriorated.
- Resist application can include applying a solvent to function as a thinner for wetting the wafer surface prior to supplying the resist solution to the wafer surface.
- This initial solvent can be applied with resist nozzle 1 10 or an adjacently mounted nozzle.
- Solvents and resists can be supplied via one or more connected feed pipes (not shown), and one or more scan arm assemblies.
- a high-efficiency dust collection filter 141 is provided above the wafer W. Air whose temperature and humidity are adjusted by a temperature and humidity controller 142 passes through the high- efficiency dust collection filter 141 to remove dust, so that clean air is supplied into the resist coating unit (COT) 100. Note that a gas containing, for example, a solvent for the resist solution may be introduced instead of air.
- a control system or controller (not shown) of the resist coating unit (COT) 100 can be used for controlling and managing various spin coating operations.
- the controller can include a process controller having a CPU, a user interface, and a memory unit.
- the user interface is connected to the process controller, and comprises an input device for allowing a process manager to perform a command input operation or the like to control the resist coating unit 100, such as via a display that indicates the visualized operation status of the resist coating unit 100.
- the memory unit connected to the process controller, stores a control program (software) for realizing various processes to be executed by the resist coating unit (COT) 100 under the control of the process controller, and recipes having multiple pieces of process condition data or the like.
- the resist coating unit (COT) 100 executes a desired process under the control of the process controller.
- the controller controls, for example, driving of the drive motor 103, a resist supplier, and a solvent supplier. Specifically, the controller controls the drive motor 103 so as to increase or decrease the rotational speed thereof.
- the controller also controls a timing of supplying the resist solution from the resist supplier to the resist nozzle 1 10, a timing of supplying a solvent like a thinner from the solvent supplier to the solvent nozzle, and the amounts and type of the resist solution and the solvent to be supplied.
- control program and recipes for the process condition data can be those stored in a computer-readable memory medium, such as a CD-ROM, a hard disk, a flexible disk or a flash memory, or can be transmitted online from another apparatus via an exclusive line for use as needed.
- a computer-readable memory medium such as a CD-ROM, a hard disk, a flexible disk or a flash memory
- the resist coating unit 100 also includes fluid-flow member 150.
- fluid-flow member 150 appears integrated with cup CP as a relatively thin structural member. This integration, however, is only one example embodiment.
- the fluid-flow member 150 can be attached to an upper structural member within resist coating unit 100, such as being attached to resist nozzle scan arm 1 12. In embodiments when attached to a scan arm, the fluid-flow member 150 can move aside when wafer W is being placed on, or removed from, substrate holder 102.
- the fluid-flow member can be attached adjacent to the cup CP and can include an independent vertical movement mechanism.
- fluid-flow member 150 provides a substrate-facing surface 155, with at least a portion of this surface curved in a radial direction relative to an axis of rotation 180 of the substrate holder 102. This results in a curved plate or ring that is positioned over the wafer W (substrate) when the wafer W is disposed on the substrate holder 102.
- the curvature is such that the fluid-flow member 150 is closer to the wafer W at an outer edge 121 of the wafer W as compared to radial distances closer to the axis of rotation.
- a height or vertical distance between the fluid-flow member 150 and the wafer W increases moving towards the axis of rotation 180.
- the fluid-flow member 150 can continue a curvature and extend to the axis of rotation 180, thereby resulting in the fluid-flow member having a conical shape.
- the fluid-flow member 150 can define an opening 157 above the wafer W to receive resist and air. This allows better control of wind mark formation at the wafer edges, while allowing more air flow in or through the center or opening 157.
- such a curved member above the substrate increases laminar flow of air and solvent above a coated substrate, but without creating a bump in the resist where the fluid-flow member begins to cover the substrate, as can be the case with a completely flat ring-shaped covering or a curvature that is either too larger or too small.
- a bump is formed from localized film thickness increase due to increased evaporation.
- Curvature of the fluid-flow member provides a gradual transition from an inner ring-shaped section 150-2, which is noticeably curved, to an outer ring-shaped section 150-2, which is generally linearly sloped or flat.
- Techniques used with this fluid-flow member can include a process of moving the fluid-flow member up and down to prevent defects. For example, having fluid-flow member 150 at an optimal height about the wafer can reduce turbulent flow, but having the fluid-flow member this close during the liquid material (resist) spreading phase can cause defects.
- a liquid material is initially dispensed onto a substrate, there can be some splattering as the liquid spreads to the edge of the substrate. If a particle splatters and lands on the fluid-flow member (being initially too close to the wafer), then this particle can later fall back onto the substrate and create a defect.
- the fluid-flow member avoid any possible splatter, and can then be lowered to an optimal height after the time period of particles splattering has been completed. Then the wafer W can continue to spin dry the liquid material while the fluid-flow member promotes laminar flow of fluid above the surface of the liquid material on the wafer W. The result is preventing wind marks in the resist surface, thereby maintaining uniformity in the layer that forms on the wafer.
- one embodiment includes a spin coating apparatus for coating substrates, such as wafer W, though other substrates, such as LCD (liquid crystal display) substrates, can be used.
- the apparatus includes a substrate holder configured to hold a substrate horizontally during a spin coating process. Vacuum suction is a typical mechanism of holding, but clamping, use of a recess to receive the substrate, or other holding mechanisms can be used.
- a rotation mechanism is connected to the substrate holder. The rotation mechanism is configured to rotate the substrate holder around an axis of rotation, which simultaneously rotates a substrate on the substrate holder.
- the apparatus includes a liquid dispenser configured to dispense a liquid material (such as resist) onto a working surface of the substrate when the substrate is disposed on the substrate holder.
- a liquid dispenser configured to dispense a liquid material (such as resist) onto a working surface of the substrate when the substrate is disposed on the substrate holder.
- Figure 3 shows example working surface 125.
- the working surface is planar and is opposite to a bottom surface of the substrate where the bottom surface is in contact with the substrate holder. In other words, with a substrate holder that holds a substrate horizontally, the working surface is the top surface.
- the apparatus includes a fluid-flow member having a substrate- facing surface 155.
- the fluid-flow member is configured to be positioned or suspended such that the substrate-facing surface is positioned vertically above the working surface of the substrate when the substrate is disposed on the substrate holder. At least a portion of the substrate-facing surface is curved such that a given vertical distance between the substrate-facing surface and the working surface varies radially relative to a given radial distance from the axis of rotation.
- the fluid-flow member has a curvature that changes from edge 121 towards a center of a substrate, which coincides with axis of rotation 180.
- the given vertical distance between the substrate-facing surface and the working surface can vary such that the given vertical distance decreases with increasing radial distance from the axis of rotation.
- the substrate-facing surface can be is positioned above a ring-shaped portion of the working surface when the working surface has a circular shape.
- the ring-shaped portion extends from an outer edge of the working surface to a predetermined radial distance from the axis of rotation.
- the fluid-flow member can define a circular opening vertically above a circular portion of the working surface, with the circular portion extending from the axis of rotation to the predetermined radial distance.
- the fluid-flow member is suspended above a peripheral portion of the substrate, while a center opening permits air flow from above, such as from dust collection filter 141 .
- the substrate-facing surface has an outer ring-shaped section, such as section 150-1 , and an inner ring- shaped section, such as section 150-2.
- the inner ring-shaped section is closer to the axis of rotation 180 than the outer ring-shaped section.
- the inner ring-shaped section of the substrate-facing surface is curved radially while the outer ring-shaped section of the substrate-facing surface has an approximately linear radial slope.
- the noticeably curved portion of the fluid-flow member is closer to the center of the substrate, while above the edge portion of the substrate the fluid-flow member is substantially flat, which could include having a radius substantially large so as to seem approximately linear.
- the inner ring-shaped section of the substrate-facing surface is curved radially while the outer ring-shaped section of the substrate-facing surface is flat such that when the fluid-flow member is positioned vertically above the working surface of the substrate there is a substantially constant vertical distance between the working surface and the outer ring-shaped section of the substrate-facing surface.
- the inner portion is curved, while the outer portion of the fluid-flow member has a constant height above the substrate.
- Embodiments can include a vertical movement mechanism configured to increase or decrease an average vertical distance between the substrate-facing surface 155 and the working surface 125 when the substrate is disposed on the substrate holder. Since the substrate-facing surface is at least partially curved, there can be a variable height at any given radial distance (but with a same height around the fluid-flow member at a specific radial distance being the same). Accordingly, an average vertical distance can be used to identify vertical movement/positions of the fluid-flow member above the substrate-facing surface, that is, an average suspension distance.
- the vertical movement mechanism can be configured to set the perpendicular distance between the outer ring- shaped section and the working surface to less than about 5 millimeters or less than about 10 millimeters.
- the inner ring-shaped section of the substrate-facing surface can have a first radius of curvature between about 20 millimeters and 90 millimeters.
- the substrate-facing surface prior to dispensing the liquid material onto the working surface, is maintained at a predetermined average vertical distance above the working surface for a first period of time.
- This can be an initial height selected to avoid particles splashing on the substrate facing surface.
- the first period of time can be relatively short compared to a total substrate spinning time. For example, this first period of time can be a fraction of a second to one or a few seconds.
- the predetermined average vertical distance to a second predetermined average vertical distance via a vertical movement mechanism for a second period of time. This second period of time can be relatively longer than the first period of time.
- the second period of time can be 5 seconds, 10 seconds, 15 seconds or more.
- the rotational velocity of the substrate can be accelerated.
- the second predetermined average vertical distance can be relatively close to the substrate such that a shortest vertical distance is around 2 mm.
- the predetermined average vertical distance is increased to a third predetermined average vertical distance for a third period of time while the substrate remains spinning on the substrate holder.
- This third period of time can be substantially longer than the second period of time, such as two or three or more times as long.
- the third predetermined average vertical distance can also have a longer shortest distance to the substrate, such as around 10 or 15 mm or so.
- a corresponding decrease in rotation speed of the substrate may be implemented to keep flow below a turbulent threshold. Spinning during this third time period can continue until drying is complete or until the wafer can be moved to a hot plate.
- a top plate or cover can be lowered at a point in time to avoid splashing but early enough to avoid turbulent effects, the top plate or cover can be raised to assist in maintaining film uniformity. Note that the times and distances given herein are exemplary, and actual time periods, rotational velocities, and distances may be dependent on a given chemical being used and/or recipe steps.
- the substrate-facing surface has an outer ring-shaped section and an inner ring-shaped section.
- the inner ring-shaped section is closer to the axis of rotation than the outer ring- shaped section.
- the inner ring-shaped section of the substrate-facing surface has a first radius of curvature and the outer ring-shaped section of the substrate-facing surface has a second radius of curvature.
- the second radius of curvature is different from the first radius of curvature.
- the substrate-facing surface is convex relative to the working surface, such as is shown in Figure 3.
- the first radius of curvature can be between about 20 millimeters and 90 millimeters, while the second radius of curvature can be between about 1000 millimeters and 2000 millimeters.
- the first radius of curvature can be between about 50 millimeters and 70 millimeters, while the second radius of curvature can be between about 1300 millimeters and 1500 millimeters.
- the substrate-facing surface defines a shape of a truncated cone being convex relative to the working surface such that a distance between the substrate-facing surface the working surface decreases in a radial direction towards an outer edge of the working surface.
- the fluid- flow member itself can be relatively flat, like a plate, or can be a block having a large thickness.
- the substrate-facing surface can have a curvature selected to improve drying uniformity during a spin coating process, that is, the shape of a particular curvature can be selected to improve drying uniformity when spin drying the substrate.
- the given vertical distance between the substrate-facing surface and the working surface that varies can be selected to minimize turbulent fluid flows over the working surface.
- the curvature is optimized for uniformity and the height is selected to balance uniformity and turbulence.
- FIG. 4 shows an enlarged cross-sectional view of an example fluid-flow member similar to Figure 3. Note that while the fluid-flow member of Figure 4 has an approximate radial curvature, the cross-section shows that substrate-facing surface 155 is comprised of multiple planar (linear) segments. Thus, the substrate-facing surface of the fluid-flow member can be comprised of multiple planar radial segments such that the fluid-flow member has a cross-sectional curvature comprised of multiple linear segments, such as those that can be seen as part of substrate- facing surface 155.
- the substrate-facing surface can be configured to rotate in unison with the substrate holder, as is shown in Figure 5.
- a uniformity and fluid flow benefit can be obtained with the fluid-flow member rotating with the substrate.
- FIG. 6 is a top view of various configurations of the fluid-flow member.
- the fluid-flow member defines an opening such that fluid-flow member forms a partial ring above the substrate holder.
- Figure 6A shows a fluid-flow member defining an angular opening.
- Figure 6B shows a fluid- flow member that is essentially a semicircle.
- Figure 6C shows another example opening in which line edges of the opening are approximately perpendicular to each other.
- FIG. 7 shows a top view of a dividing fluid-flow member or top plate.
- the fluid-flow member is comprised of multiple sections that can be mechanically moved from the substrate holder (either vertically or laterally). Such movement can be useful to allow placing and retrieving substrates on the substrate holder, as well as permitting nozzle arm movement.
- each section of the fluid-flow member can be attached to an arm that can be moved so that no part of the fluid-flow member covers a wafer.
- Each arm can be moved in unison with other arms to form a contiguous fluid-flow member.
- the sections can also be moved apart a relatively small distance to better optimize the balance between thickness uniformity and turbulence control.
- one embodiment includes a fluid-flow member comprising two or more segments (for example four segments) such that at least one segment is configured to be moved away from an adjacent segment.
- segments can have a radial curvature as described above, or be essentially planar segments that form a generally flat substrate-facing surface.
- FIGS. 8-1 1 are diagrams illustrating a fluid-flow member with a dynamically changing center opening.
- Figures 8A and 8B show a top view of a fluid-flow member having an opening with a given diameter, and that this given diameter increases, thereby shrinking a total surface area of the fluid-flow member.
- FIG. 9 is a top view of one example embodiment of such a fluid-flow member defining an approximately circular opening centered around the axis of rotation (of the substrate holder/wafer), while FIG. 10 shows a side view.
- This fluid-flow member is configured such that a diameter of the defined opening can be increased and/or decreased.
- the example shown embodies this technique as essentially a diaphragm or shutter-style opening.
- the fluid-flow member can include a diaphragm member and a ring-shaped base plate 162.
- the diaphragm member can include several components such as blades 164 and rods 166.
- Rods 166 can pass through slots 165, of blades 164, and hold blades via a fastener 167.
- Rods 166 can also be attached to a mounting ring 168. Movement of the mounting ring 168 is such that rotating the mounting ring causes the blades to increase and/or decrease the diameter of the defined opening.
- the rods 166 can move through slots 165, thereby causing the blades 164 to reposition themselves, such as be sliding across each other. This in turn increases or decreases the defined opening.
- the fluid-flow member can be considered a ring that has an adjustable inner radius or diameter. With such adjustability, the fluid-flow member can be dynamically adjusted for particular applications.
- a substrate is positioned on a substrate holder, such as by using a robotic arm.
- the substrate holder holds the substrate horizontally.
- the substrate holder has an axis of rotation.
- the substrate has a bottom surface that contacts the substrate holder, and has a working surface opposite to the bottom surface.
- a fluid-flow member is positioned above the substrate holder.
- the fluid-flow member has a substrate-facing surface such that positioning the fluid-flow member includes positioning the substrate-facing surface vertically above the working surface at a predetermined average vertical distance above the working surface.
- At least a portion of the substrate-facing surface is curved such that at a given vertical distance between the substrate-facing surface and the working surface varies radially relative to a given radial distance from the axis of rotation.
- a liquid material such as a resist, is dispensed onto the working surface of the substrate via a liquid dispenser positioned above the substrate.
- the substrate and substrate holder then spin via a rotation mechanism coupled to the substrate holder such that the liquid material spreads across the working surface of the substrate.
- the substrate-facing surface prior to dispensing the liquid material onto the working surface the substrate-facing surface is maintained at the predetermined average vertical distance above the working surface, and subsequent to initiating dispensing the liquid material the predetermined average vertical distance is decreased to a second predetermined average vertical distance via a vertical movement mechanism.
- the substrate- facing surface has an outer ring-shaped section and an inner ring-shaped section, the inner ring-shaped section being closer to the axis of rotation than the outer ring-shaped section.
- the inner ring-shaped section of the substrate-facing surface is curved radially while the outer ring-shaped section of the substrate-facing surface has an approximately linear radial slope, such that decreasing the predetermined average vertical distance to the second predetermined average vertical distance results in the outer section of the substrate-facing surface being positioned less than about 4 millimeters from the working surface.
- the outer section extends beyond a radial distance 127 of about 80-120 millimeters from the axis of rotation when the working surface has a diameter of about 300 millimeters.
- the outer section extends beyond a radial distance 127 of about 100-170 millimeters from the axis of rotation when the working surface has a diameter of about 450 millimeters.
- a relatively large section of the outer diameter to have a vertical distance— between the working surface and the substrate-facing surface— that is less than about 3 millimeters.
- a vertical distance— between the working surface and the substrate-facing surface— that is less than about 3 millimeters.
- having the vertical distance beyond about 1 10 mm (about 165 mm for a 225 mm radius wafer) set to less than about 3mm, and even tapering to about 1 .5 mm results in dramatically improved laminar flow for higher rotational velocities, such as up to 2800 rpms or more.
- Other embodiments include decreasing the first predetermined average vertical distance to the second predetermined average vertical distance within a predetermined time from initiating dispensing of the liquid material onto the working surface.
- a resist is deposited on a substrate, the substrate is spun and after about a second the resist covers the substrate allowing the substrate-facing surface to be lowered to promote laminar fluid flow while spin drying.
- the substrate-facing surface can be rotated in a same rotational direction as the substrate holder such that the substrate- facing surface rotates at about a same angular velocity as the working surface.
- Other embodiments include methods for changing cup exhaust in different recipe steps to optimize the balance between film thickness uniformity and particle generation while maintaining turbulence control. Having a relatively low exhaust rate is generally better for film thickness uniformity when using a top plate (fluid-flow member), that is, relatively low exhaust rate results in a more uniform film thickness.
- One competing interest is that having an exhaust rate lower than a certain value can result in particles landing on a wafer being processed. This danger can be higher with particular process steps, and so methods can include increasing exhaust during specific process steps having a higher probability of receiving particle contaminates.
- exhaust is too low, there is a potential for pressure to build in the spin coating module and push particles into other parts of the wafer fabrication system.
- techniques can include adjusting exhaust rates, in combination with using the fluid-flow member, to keep defects below a predetermined amount and to keep a uniformity above a predetermined value.
- the fluid-flow member and methods herein can improve uniformity to various degrees depending on process conditions and liquid material properties. For example, based on a particular selection of pressure, temperature, and type of liquid material, techniques herein can enable rotation of a 300 mm substrate up to about 2800-3200 rpm without turbulent effects, and rotation of a 450 mm substrate up to about 1200- 1400 rpm or more without turbulent effects.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016570760A JP6448064B2 (en) | 2014-02-24 | 2014-02-24 | Cover plate for defect control in spin coating |
CN201480077666.5A CN106132564B (en) | 2014-02-24 | 2014-02-24 | Cover plate for defect control in spin coating |
PCT/US2014/018054 WO2015126425A1 (en) | 2014-02-24 | 2014-02-24 | Cover plate for defect control in spin coating |
KR1020167025698A KR102006059B1 (en) | 2014-02-24 | 2014-02-24 | Cover plate for defect control in spin coating process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2014/018054 WO2015126425A1 (en) | 2014-02-24 | 2014-02-24 | Cover plate for defect control in spin coating |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015126425A1 true WO2015126425A1 (en) | 2015-08-27 |
Family
ID=53878750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2014/018054 WO2015126425A1 (en) | 2014-02-24 | 2014-02-24 | Cover plate for defect control in spin coating |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6448064B2 (en) |
KR (1) | KR102006059B1 (en) |
CN (1) | CN106132564B (en) |
WO (1) | WO2015126425A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107159522B (en) * | 2017-05-24 | 2023-04-07 | 吉林大学 | Device for uniformly coating polyurethane anti-drag material on surface of impeller |
CN108031612A (en) * | 2017-11-28 | 2018-05-15 | 宁波美固力磁电有限公司 | A kind of dispenser |
CN108816672B (en) * | 2018-06-19 | 2020-06-26 | 吉林大学 | Method for saving materials in impeller rotating coating process |
JP6606239B1 (en) * | 2018-08-22 | 2019-11-13 | 株式会社オリジン | Method for manufacturing coated object |
JP7402655B2 (en) * | 2019-10-17 | 2023-12-21 | 東京エレクトロン株式会社 | Substrate processing equipment |
CN111687017A (en) * | 2020-04-24 | 2020-09-22 | 河北叁迪光学科技有限公司 | 3D curved screen for watch and spraying process thereof |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1478480A (en) * | 1973-11-28 | 1977-06-29 | Bayer Ag | Process for the coating of fibres and filaments |
US5211753A (en) * | 1992-06-15 | 1993-05-18 | Swain Danny C | Spin coating apparatus with an independently spinning enclosure |
US5395649A (en) * | 1992-02-04 | 1995-03-07 | Sony Corporation | Spin coating apparatus for film formation over substrate |
US5633040A (en) * | 1993-05-20 | 1997-05-27 | Tokyo Electron Limited | Method and apparatus for treating film coated on substrate |
US6013316A (en) * | 1998-02-07 | 2000-01-11 | Odme | Disc master drying cover assembly |
US6261635B1 (en) * | 1999-08-27 | 2001-07-17 | Micron Technology, Inc. | Method for controlling air over a spinning microelectronic substrate |
US6716285B1 (en) * | 2002-10-23 | 2004-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Spin coating of substrate with chemical |
US6866431B2 (en) * | 2002-02-19 | 2005-03-15 | Canon Kabushiki Kaisha | Light amount adjustment apparatus, manufacturing method, and photographing apparatus |
US7323124B2 (en) * | 2002-08-14 | 2008-01-29 | Fujifilm Corporation | Optical disc cover layer formation method and optical disc cover layer formation device |
US7566365B2 (en) * | 2003-03-10 | 2009-07-28 | Tokyo Electron Limited | Liquid processing apparatus and liquid processing method |
US7727853B2 (en) * | 2002-05-14 | 2010-06-01 | Kabushiki Kaisha Toshiba | Processing method, manufacturing method of semiconductor device, and processing apparatus |
US20100143586A1 (en) * | 2008-12-10 | 2010-06-10 | Tdk Corporation | Spin coating apparatus, spin coating method, and method for manufacturing information recording medium |
US7887728B2 (en) * | 2004-06-25 | 2011-02-15 | Toray Industries, Inc. | Spinning pack for dry-wet spinning, diverting guide for fiber bundle, and apparatus and method for producing fiber bundle |
US20120003839A1 (en) * | 2002-12-26 | 2012-01-05 | Canon Kabushiki Kaisha | Chemical treatment method |
US8235062B2 (en) * | 2008-05-09 | 2012-08-07 | Fsi International, Inc. | Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation |
US8387635B2 (en) * | 2006-07-07 | 2013-03-05 | Tel Fsi, Inc. | Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6376431A (en) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | Spin coating equipment |
JPH0248066A (en) * | 1988-08-10 | 1990-02-16 | Fuji Photo Film Co Ltd | Spin coater |
JP3248232B2 (en) * | 1992-02-04 | 2002-01-21 | ソニー株式会社 | Resist coating apparatus and spin coating method for resist |
JP3605852B2 (en) * | 1994-05-18 | 2004-12-22 | ソニー株式会社 | Substrate spin coater |
JPH0871484A (en) * | 1994-08-31 | 1996-03-19 | Mitsubishi Chem Corp | Spin coater |
JPH0910658A (en) * | 1995-06-27 | 1997-01-14 | Hitachi Ltd | Coating method and coater |
JPH11345763A (en) * | 1998-06-02 | 1999-12-14 | Nippon Foundry Inc | Treating apparatus for semiconductor substrate |
JP4043163B2 (en) * | 1999-12-24 | 2008-02-06 | エム・セテック株式会社 | Chemical solution coating method and apparatus |
-
2014
- 2014-02-24 KR KR1020167025698A patent/KR102006059B1/en active IP Right Grant
- 2014-02-24 WO PCT/US2014/018054 patent/WO2015126425A1/en active Application Filing
- 2014-02-24 CN CN201480077666.5A patent/CN106132564B/en active Active
- 2014-02-24 JP JP2016570760A patent/JP6448064B2/en active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1478480A (en) * | 1973-11-28 | 1977-06-29 | Bayer Ag | Process for the coating of fibres and filaments |
US5395649A (en) * | 1992-02-04 | 1995-03-07 | Sony Corporation | Spin coating apparatus for film formation over substrate |
US5211753A (en) * | 1992-06-15 | 1993-05-18 | Swain Danny C | Spin coating apparatus with an independently spinning enclosure |
US5633040A (en) * | 1993-05-20 | 1997-05-27 | Tokyo Electron Limited | Method and apparatus for treating film coated on substrate |
US6013316A (en) * | 1998-02-07 | 2000-01-11 | Odme | Disc master drying cover assembly |
US6261635B1 (en) * | 1999-08-27 | 2001-07-17 | Micron Technology, Inc. | Method for controlling air over a spinning microelectronic substrate |
US6866431B2 (en) * | 2002-02-19 | 2005-03-15 | Canon Kabushiki Kaisha | Light amount adjustment apparatus, manufacturing method, and photographing apparatus |
US7727853B2 (en) * | 2002-05-14 | 2010-06-01 | Kabushiki Kaisha Toshiba | Processing method, manufacturing method of semiconductor device, and processing apparatus |
US7323124B2 (en) * | 2002-08-14 | 2008-01-29 | Fujifilm Corporation | Optical disc cover layer formation method and optical disc cover layer formation device |
US6716285B1 (en) * | 2002-10-23 | 2004-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Spin coating of substrate with chemical |
US20120003839A1 (en) * | 2002-12-26 | 2012-01-05 | Canon Kabushiki Kaisha | Chemical treatment method |
US7566365B2 (en) * | 2003-03-10 | 2009-07-28 | Tokyo Electron Limited | Liquid processing apparatus and liquid processing method |
US7887728B2 (en) * | 2004-06-25 | 2011-02-15 | Toray Industries, Inc. | Spinning pack for dry-wet spinning, diverting guide for fiber bundle, and apparatus and method for producing fiber bundle |
US8387635B2 (en) * | 2006-07-07 | 2013-03-05 | Tel Fsi, Inc. | Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids |
US8235062B2 (en) * | 2008-05-09 | 2012-08-07 | Fsi International, Inc. | Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation |
US20100143586A1 (en) * | 2008-12-10 | 2010-06-10 | Tdk Corporation | Spin coating apparatus, spin coating method, and method for manufacturing information recording medium |
Also Published As
Publication number | Publication date |
---|---|
KR102006059B1 (en) | 2019-07-31 |
CN106132564A (en) | 2016-11-16 |
JP6448064B2 (en) | 2019-01-09 |
CN106132564B (en) | 2019-12-20 |
JP2017508616A (en) | 2017-03-30 |
KR20160125429A (en) | 2016-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10262880B2 (en) | Cover plate for wind mark control in spin coating process | |
US5532192A (en) | Method of spiral resist deposition | |
JP6448064B2 (en) | Cover plate for defect control in spin coating | |
TWI666684B (en) | Coating film forming method, coating film forming device and memory medium | |
JP6032189B2 (en) | Coating film forming apparatus, coating film forming method, and storage medium | |
US7553374B2 (en) | Coating treatment apparatus and coating treatment method | |
US9553007B2 (en) | Coating method and coating apparatus | |
US6565656B2 (en) | Coating processing apparatus | |
TW201304876A (en) | Coating method and coating apparatus | |
WO2020054424A1 (en) | Application-film forming method and application-film forming device | |
JP5731578B2 (en) | Coating processing method, program, computer storage medium, and coating processing apparatus | |
US9855579B2 (en) | Spin dispenser module substrate surface protection system | |
JP5327238B2 (en) | Coating processing apparatus, coating processing method, and storage medium | |
WO2019105405A1 (en) | Gluing device and method | |
JP6481598B2 (en) | Coating film forming method, coating film forming apparatus, and storage medium | |
KR20020041418A (en) | Method and apparatus for controlling air over a spinning microelectronic substrate | |
JP2015153857A (en) | Coating method, program, computer storage medium and coating device | |
TWI595532B (en) | Spin coating apparatus and method for manufacturing semiconductor device | |
JP7202901B2 (en) | Coating film forming method and coating film forming apparatus | |
TWI710409B (en) | Method for coating a substrate and also a coating system | |
WO2021020215A1 (en) | Development apparatus and development method | |
JPH0462069B2 (en) | ||
JPH10135131A (en) | Non-striation coating method of high viscosity resist coating film | |
TW202247910A (en) | Coating method and coating device | |
JP6053656B2 (en) | Liquid processing equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14882850 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016570760 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20167025698 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14882850 Country of ref document: EP Kind code of ref document: A1 |