WO2015119400A1

WO2015119400A1 - Substrate treatment apparatus

Info

Publication number: WO2015119400A1
Application number: PCT/KR2015/000969
Authority: WO
Inventors: 김경민; 이명진; 이용현; 최재욱
Original assignee: 주성엔지니어링(주)
Priority date: 2014-02-04
Filing date: 2015-01-29
Publication date: 2015-08-13
Also published as: KR20150091769A; TW201535568A; CN105940482A

Abstract

The present invention relates to a substrate treatment apparatus comprising: a process chamber; a plurality of gas supply pipes for supplying gas or plasma active species to the inside of the process chamber; a remote plasma generation unit connected to one gas supply pipe among the plurality of gas supply pipes; and an opening/closing valve, which is provided to the one gas supply pipe between the remote plasma generating unit and the process chamber, for selectively cutting off the one gas supply pipe.

Description

Substrate Processing Equipment

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and to a substrate processing apparatus capable of improving cleaning efficiency and cleaning power of a process chamber and improving yield.

In general, to manufacture a semiconductor device or a flat panel display device, a thin film deposition process for depositing a dielectric material or the like on a substrate, a photolithography process for exposing or hiding selected areas of the thin films using a photosensitive material, and a thin film of the selected area The removal process is performed through an etching process for patterning as desired, and each process is performed in a process chamber designed for an optimal environment for the process.

By repeatedly performing such a thin film deposition or etching process, deposition of by-products such as particles composed of polymer or the like may occur at an undesired place such as the inner wall of the process chamber or the periphery of the substrate stabilizer.

The compound deposited as described above not only acts as a source of contamination inside the chamber by peeling at a predetermined thickness or more, but also alters electrical properties such as impedance inside the chamber. Thus, the apparatus for treating substrates using plasma has adverse effects on plasma density and thin film uniformity. Go crazy.

To avoid this phenomenon, the inside of the process chamber should be periodically cleaned to remove the deposited contaminants. That is, the cleaning process must be performed.

Commonly used cleaning methods may be divided into dry cleaning using plasma and wet cleaning using a cleaning liquid. Dry cleaning is a method in which a cleaning gas is excited in a plasma state and then reacted with a compound deposited in a chamber.

Even with such dry cleaning, there is a limit to completely clean the inside of the chamber. Thus, wet cleaning is a method in which a person disassembles and directly cleans using a HF-based cleaning solution.

Although wet cleaning is very effective in cleaning, the equipment needs to be pumped for a long time to remove impurities and several dummy processes to normalize the process. This can only be greatly reduced.

Therefore, usually, only dry cleaning is performed and wet cleaning is performed after several to several tens of dry cleanings.

Dry cleaning using plasma can be divided into in-situ cleaning and remote plasma cleaning. The former is a method of generating cleaning plasma inside a chamber which performs thin film deposition or etching process, and the latter remote plasma The cleaning is performed by exciting the cleaning gas in a plasma state in a remote plasma generator separately installed outside the chamber and then introducing the activated cleaning gas into the process chamber.

Although in-situ cleaning is simple because no additional equipment is required, there is a problem in that the surface of the electrode is deteriorated or peeled off due to ion shock caused by the high frequency power applied to excite the cleaning gas.

In addition, the frequent discharge of the plasma damages the inner member of the chamber, there is a problem that the maintenance cycle must be shortened.

Therefore, despite the disadvantage that a separate plasma generator and a separate RF power source are required, the remote plasma cleaning method is steadily used.

1 is a schematic diagram of a substrate processing apparatus 10 of a remote plasma cleaning method according to the prior art.

As shown in FIG. 1, the substrate processing apparatus 10 according to the related art includes a process chamber 1, a shower head 2 provided in the process chamber 1, and a shower head 2. A remote plasma generator 3 connected upstream with the shower head, a gas supply line 4 provided at an upper portion of the remote plasma generator 3 and supplying gas into the remote plasma generator 3; A first reaction gas supply pipe 5 which supplies a first reaction gas into the remote plasma generator 3 and is connected to the gas supply line 4, and a second reaction gas into the remote plasma generator 3. And a second reaction gas supply pipe (6) connected to the gas supply line (4) and a cleaning gas pipe (7) connected to the gas supply line and supplying the cleaning gas to the remote plasma generator.

As such, the substrate treating apparatus according to the related art is connected to a common gas supply line in which the first reaction gas supply pipe, the second reaction gas supply pipe, and the cleaning gas pipe are all common, so that the first reaction gas and the second reaction gas are supplied to the gas supply line. Are combined to be fed into the remote plasma generator. For this reason, since a part of the first reaction gas and a part of the second reaction gas form a foreign substance such as powder in the gas supply line, a part of the first reaction gas and a part of the second reaction gas should actually react. There has been a problem that the yield of the substrate processing apparatus is very impaired since the process chamber is not reached. In addition, since these powders remain in the gas supply line located upstream of the remote plasma generator, even if plasma active species are formed in the remote plasma generator, there is no method for cleaning these powders, and thus the cleaning efficiency is very low. Subsequently, the defect rate was high in the substrate processing process.

It is therefore an object of the present invention to provide a substrate processing apparatus that solves the problems of the prior art.

Specifically, it is an object of the present invention to provide a substrate processing apparatus having improved yield.

It is also an object of the present invention to provide a substrate treating apparatus having improved cleaning power and cleaning efficiency.

According to one embodiment of the invention, the invention, the process chamber; A plurality of gas supply pipes supplying gas or plasma active species into the process chamber; A remote plasma generation unit connected to one gas supply pipe among the plurality of gas supply pipes; The on-off valve may be provided between the remote plasma generating unit and the process chamber in the one gas supply pipe, the on / off valve selectively blocking the one gas supply pipe.

Preferably, the substrate processing apparatus further includes a control unit for controlling the process chamber, the remote plasma generating unit, and the opening / closing valve, wherein the control unit prevents the reaction gas from flowing into the one gas supply pipe. It is characterized by controlling the on-off valve.

In addition, the control unit is characterized in that for controlling the opening and closing valve to block the flow of the plasma supply pipe when the start of the substrate deposition process in the process chamber or a predetermined time before the start.

In addition, the control unit is characterized in that for controlling the opening and closing valve to open the flow of the plasma supply pipe when starting the cleaning process of the substrate processing apparatus.

And, according to another embodiment of the present invention, the present invention, the process chamber; A remote plasma generation unit provided upstream of the process chamber; A plasma supply pipe connecting the process chamber and the remote plasma generator; And an on / off valve provided in the plasma supply pipe to selectively block the plasma supply pipe, wherein the open / close valve allows forward flow from the remote plasma generating unit to the process chamber, but from the process chamber It is possible to provide a substrate processing apparatus characterized in that it is configured or operative to block reverse flow in the direction of the plasma generator.

Further, preferably, at least one cleaning gas pipe for supplying at least one cleaning gas to the remote plasma generating unit is connected upstream of the remote plasma generating unit, and downstream of the on / off valve in the plasma supply pipe, the process chamber At least one reaction gas supply pipe for supplying at least one or more reaction gas is characterized in that connected.

In addition, according to another embodiment of the present invention, the present invention, the process chamber; A plurality of gas supply pipes supplying gas or plasma active species into the process chamber; A remote plasma generation unit connected to one gas supply pipe among the plurality of gas supply pipes; Between the remote plasma generating unit and the process chamber in the one gas supply pipe, an opening and closing valve for opening the one gas supply pipe is provided only in a state in which there is no reactive gas material in the process chamber and the one gas supply pipe. A substrate processing apparatus can be provided.

In addition, according to another embodiment of the present invention, the present invention, the process chamber; A cleaning gas supply pipe connected to the process chamber; A remote chamber connected to the cleaning gas supply pipe; A reaction gas supply pipe connected to the cleaning gas supply pipe; And an inlet blocking means for blocking the inflow of the reaction gas into the remote chamber when the reaction gas supply pipe is opened.

In addition, preferably, the inlet blocking means is an on-off valve.

Preferably, the substrate processing apparatus further includes a control unit for controlling the process chamber, the remote chamber, and the inflow blocking means.

Preferably, the inlet blocking means includes a first valve connected to a first reaction gas supply pipe, a second valve connected to a second reaction gas supply pipe, and a third valve connected to the cleaning gas supply pipe, When the valve is opened, the first valve and the second valve is cut off.

According to the above-mentioned problem solving means, the present invention by separating the first reaction gas supply pipe and the second reaction gas supply pipe and the cleaning gas pipe around the on-off valve, generated by the chemical reaction of the first reaction gas supply and the second reaction gas Since foreign matters such as particles, which are by-products, can be prevented from being formed in the cleaning gas pipe, the yield of the substrate processing apparatus can be improved, and the cleaning power and the cleaning efficiency of the substrate processing apparatus can be improved.

In addition, since the first reaction gas supply pipe and the second reaction gas supply pipe can be mixed with each other only in the plasma supply pipe, the present invention can isolate the first reaction gas supply pipe and the second reaction gas supply pipe from each other before the plasma supply pipe. It is possible to prevent the reaction of the first reaction gas and the second reaction gas on the supply line and to minimize the space where the first reaction gas and the second reaction gas chemically react before the process chamber, thereby improving the yield of the substrate treating apparatus. At the same time, since the plasma supply pipe and the opening / closing valve can be completely cleaned by the plasma active species supplied from the remote plasma generating unit in the cleaning process after the deposition process of the substrate, the first reaction gas and the second reaction gas are small. Even if particles are formed by chemical reaction in the plasma supply pipe, the plasma is supplied in one cleaning process. Particles in the tube can also be removed, resulting in improved cleaning power and cleaning efficiency of the substrate processing apparatus. Therefore, the present invention can significantly reduce the defective rate of the substrate in the substrate processing step.

In addition, the present invention provides an opening and closing valve, it is possible to prevent the first reaction gas and the second reaction gas from flowing into the plasma supply pipe and the remote plasma generation unit during the substrate deposition process, and at the same time generated from the remote plasma generation unit during the cleaning process By using the plasma active species of the cleaned cleaning gas, the opening / closing valve, the plasma supply pipe, and the entire process chamber can be cleaned in one washing process, thereby improving cleaning power and cleaning efficiency of the substrate treating apparatus. Therefore, the present invention can significantly reduce the defective rate of the substrate in the substrate processing step.

1 is a schematic diagram of a substrate processing apparatus according to the prior art.

2 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention.

3 is a schematic block diagram of a substrate processing apparatus according to an embodiment of the present invention.

4 is a schematic flowchart of a substrate processing method according to an embodiment of the present invention.

5 is a schematic flowchart of a cleaning step according to an embodiment of the present invention.

6 is a schematic flowchart of a cleaning step according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. In the accompanying drawings, it should be noted that the same reference numerals are used in the drawings to designate the same configuration in other drawings as much as possible. In addition, in describing the present invention, when it is determined that a detailed description of a related known function or known configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. And certain features shown in the drawings are enlarged or reduced or simplified for ease of description, the drawings and their components are not necessarily drawn to scale. However, those skilled in the art will readily understand these details.

For reference, hereinafter "upstream" or "upstream side" or "upstream portion" means a direction or portion relatively close to the starting point of the flow of gas relative to the flow direction of the cleaning gas or the reaction gas, and "downstream". Or " downstream side " or " downstream portion " means a direction or portion relatively close to the point of arrival of the flow of gas relative to the flow direction of the scrubbing gas or reaction gas.

2 is a schematic diagram of a substrate processing apparatus 1000 according to an embodiment of the present invention, and FIG. 3 is a schematic block diagram of the substrate processing apparatus 1000 according to an embodiment of the present invention.

As shown in FIG. 2 and FIG. 3, the substrate processing apparatus 1000 according to an embodiment of the present invention may include a first reaction gas supply pipe 210 for supplying a first reaction gas and a second reaction gas for supplying a second reaction gas. A second reaction gas supply pipe 220, a first cleaning gas pipe 510 supplying the first cleaning gas, a second cleaning gas pipe 520 supplying the second cleaning gas, and a first reaction gas supply pipe 210. A first purge gas supply pipe 230 for supplying a first purge gas, a second purge gas supply pipe 240 for supplying a second purge gas to the second reaction gas supply pipe 220, a first reaction gas and a second reaction gas A process chamber 100 to which a thin film deposition process of a substrate is supplied, a substrate setter 110 on which the substrate is placed, a gate valve 130 provided on one side of the process chamber 100, and a remote Chamber 400, the remote plasma generating unit 410 provided in the remote chamber 400, the remote chamber 400 and the process chamber 100 It includes a supply pipe connected to the plasma 413 and the exhaust pump 140, a controller 600 for controlling the foregoing components are provided in the lower portion of the exhaust pipe of the process chamber 100 that.

The process chamber 100 is a reaction space in which a plasma is applied inside the first reaction gas and the second reaction gas, and a process of depositing a thin film on the substrate placed in the substrate mounting unit 110 is performed.

The process chamber 100 may include a substrate setter 110 provided inside the process chamber 100 to place a substrate thereon and an upper portion of the process chamber 100 provided to the substrate setter 110. One side of the process chamber 100 for entering and exiting the substrate to the process chamber 100 and the gas distribution plate 120 for spraying the plasma active species of the first reaction gas, the second reaction gas and the cleaning gas toward the It is provided with a gate valve 130 provided in, and an exhaust pump 140 provided in the lower portion of the process chamber 100 for discharging the residual gas and residual material in the process chamber 100.

The process chamber 100 is connected to the downstream end of the plasma supply pipe 413 through the gas distribution plate 120 in a communication manner.

That is, the plasma supply pipe is connected to an upstream side of the process chamber.

The plasma supply pipe 413 connects the process chamber 100, the remote plasma generating unit 410, and the remote chamber 400 in an upstream side of the process chamber 100, and connects the plasma supply pipe ( 413 supplies the plasma or plasma active species or ions generated by the remote plasma generator 410 into the process chamber 100.

The plasma supply pipe 413 is provided with an inlet blocking means for blocking the inflow of the reaction gas into the remote chamber. That is, the plasma supply pipe is provided with an opening / closing valve 415 for selectively blocking the flow inside the plasma supply pipe 413 upstream of the process chamber.

The plasma supply pipe 413 is divided into two pipes around the open / close valve 415, and intermediately connects the pipe connecting the open / close valve 415 and the remote chamber 400 among the plasma supply pipes 413. The pipe 413c is referred to as a cleaning gas supply pipe 413d that connects the on / off valve 415 and the process chamber 100 among the plasma supply pipe 413. That is, the plasma supply pipe 413 is composed of an intermediate connecting pipe 413c and a cleaning gas supply pipe 413d.

The open / close valve 415 selectively blocks the plasma supply pipe 413 according to whether the process inside the process chamber 100 is a substrate deposition process or a cleaning process of the substrate processing apparatus 1000.

Specifically, the on-off valve is configured or operated to allow forward flow from the remote plasma generator to the process chamber, but to block reverse flow from the process chamber to the remote plasma generator.

At this time, opening or closing of the on-off valve 415 is controlled by the controller 600.

Specifically, the control unit 600 may control the opening and closing valve 415 to block the flow of the plasma supply pipe 413 when the substrate deposition process in the process chamber 100 starts or before a predetermined time. have. As a result, the first reaction gas and the second reaction gas supplied for the substrate deposition process are supplied to the plasma supply pipe 413 and the remote plasma generating unit 410 and the cleaning gas pipe disposed upstream of the plasma supply pipe 413. It is possible to completely prevent backflow or inflow.

In addition, the controller 600 may control the open / close valve 415 to open the flow of the plasma supply pipe 413 when the cleaning process of the substrate processing apparatus 1000 starts. Therefore, the plasma supply pipe 413, the opening / closing valve 415 and the process chamber 100 may be sequentially cleaned using the plasma active species generated by the remote plasma generating unit 410 at the start of the cleaning process.

Preferably, the control unit 600 controls the open / close valve 415 to open the plasma supply pipe 413 only in a state in which there is no reaction gas material in the process chamber 100 and the plasma supply pipe 413. can do. Due to the operation algorithm of the control unit, it is possible to prevent the reaction gas is introduced or flowed back into the plasma supply pipe at the source to prevent contamination of the plasma supply pipe by the reaction gas material.

A first branch pipe 413a and a second branch pipe 413b are provided on one side surface of the plasma supply pipe 413 on the downstream side of the open / close valve 415. The first branch pipe 413a is connected to the first reaction gas supply pipe 210 in a communication manner, and the first branch pipe 413a is connected to the first reaction gas supply pipe 210 at the first portion. A first supply valve 212 is provided to selectively block the flow of the reaction gas supply pipe 210. Similarly, the second branch pipe 413a is connected to the second reaction gas supply pipe 220 in a communication manner, and the connection portion between the second branch pipe 413a and the second reaction gas supply pipe 220 is A second supply valve 222 is provided to selectively block the flow of the second reaction gas supply pipe 220.

The first reaction gas supply pipe 210 is connected to the first reaction gas storage unit 211, and the second reaction gas supply pipe 220 is connected to the second reaction gas storage unit 221.

Preferably, the first reaction gas may be SiH ₄ gas, and the second reaction gas may be N ₂ O gas.

In the middle of the first reaction gas supply pipe 210, the first purge gas supply pipe for supplying a first purge gas to the first reaction gas supply pipe 210 and the first blocking the flow of the first purge gas supply pipe selectively A first purge valve 232 is provided, and in the middle of the second reaction gas supply pipe 220, a second purge gas supply pipe for supplying a second purge gas to the second reaction gas supply pipe 220 and the second purge. A second purge valve 242 is provided to selectively block the flow of the gas supply pipe.

The first purge gas supply pipe 230 is connected to the first purge gas storage unit 231, and the second purge gas supply pipe 240 is connected to the second purge gas storage unit 241.

The first purge gas and the second purge gas may be formed when the first purge valve 232 and the second purge valve 242 are opened and the first supply valve 212 and the second supply valve 222 are opened. The first reaction gas supply pipe 210 and the second reaction gas supply pipe 220 are discharged through the exhaust pipe by the operation of the exhaust pump 140 via the process chamber 100 via the plasma supply pipe 413.

The remote plasma generator 410 is provided upstream of the plasma supply pipe 413. The remote plasma generator 410 receives RF power from the RF power source 411 to activate the cleaning gas introduced into the remote plasma generator 410 into highly reactive plasma active species or ions. The plasma active species or ions of the activated cleaning gas are supplied from the remote plasma generating unit 410 to the plasma supply pipe 413, the open / close valve 415, and the process chamber 100 to supply the plasma supply pipe 413 and the open / close valve 415. ) And react with foreign substances such as particles unnecessarily deposited on the inner wall and the edge of the process chamber 100 to separate and remove them from the surface.

The remote plasma generating unit 410 is connected to the cleaning gas pipe in the upstream, and connected to the plasma supply pipe 413 in the downstream. That is, the remote plasma generating unit 410 receives the cleaning gas through the cleaning gas pipe to excite the cleaning gas with plasma active species or ions by RF power, and then plasma active species or ions of the cleaning gas into the plasma supply pipe ( 413) to the process chamber.

The cleaning gas pipe includes a first cleaning gas pipe 510 for supplying a first cleaning gas and a second cleaning gas pipe 520 for supplying a second cleaning gas. The first cleaning gas pipe 510 is connected to the first cleaning gas storage unit 511, and a first cleaning valve for selectively blocking the first cleaning gas pipe 510 in the middle of the first cleaning gas pipe 510. 512 is provided, the second cleaning gas pipe 520 is connected to the second cleaning gas storage unit 521, the second cleaning gas pipe 520 in the middle of the second cleaning gas pipe 520 to selectively A second cleaning valve 522 is provided to shut off.

Preferably, the first cleaning gas may be an NF ₃ gas, and the second cleaning gas may be an Ar gas.

Hereinafter, a substrate processing method for processing a substrate using the substrate processing apparatus 1000 according to the present invention will be described in more detail.

4 is a schematic flowchart of a substrate processing method (S2000) according to an embodiment of the present invention, Figure 5 is a schematic flowchart of a cleaning step (S2410) according to an embodiment of the present invention, 6 is a schematic flowchart of the cleaning step (S2420) according to another embodiment of the present invention.

The controller 600 executes a substrate deposition process and then performs a cleaning operation of the substrate processing apparatus 1000 for a subsequent substrate deposition process.

Specifically, as shown in FIG. 4, first, the controller 600 closes the open / close valve 415 to block the plasma supply pipe 413.

Thereafter, the control unit 600 opens the first supply valve 212 provided in the first reaction gas supply pipe 210 and the second supply valve 222 provided in the second reaction gas supply pipe 220. A first reaction gas and a second reaction gas are supplied into the reaction chamber through the plasma supply pipe 413. (S2200)

Subsequently, the control unit 600 applies a plasma to the process chamber 100 to convert the mixed gas including the first reaction gas and the second reaction gas into a plasma and onto the substrate placed in the substrate setter 110. A thin film is deposited on the substrate (S2300).

After the substrate deposition process is completed, the control unit 600 uses the plasma active tube of the cleaning gas formed by supplying the RF power and the cleaning gas to the remote plasma generating unit 410, the plasma supply pipe 413, the The on / off valve 415 and the process chamber 100 are cleaned. (S2400)

The cleaning of the plasma supply pipe 413, the on-off valve 415 and the process chamber 100 using the plasma active species of the cleaning gas may be performed in two ways as shown in FIGS. 5 and 6. Can be. Of course, portions of the scheme of FIG. 5 and of the scheme of FIG. 6 may be implemented in combination with each other.

First, as shown in FIG. 5, the controller 600 may perform a washing process without using a purge gas. (S2410) In this case, the first purge gas supply pipe 230 and the second purge may be substantially used. The gas supply pipe 240 and the first purge valve 232 and the second purge valve 242 may be omitted.

Specifically, referring to FIG. 5, referring to a cleaning step (S2410) according to an embodiment of the present invention, first, the controller 600 includes the first supply valve 212 and the second supply valve 222. ) Is closed to block the first reaction gas and the second reaction gas from flowing into the plasma supply pipe 413 and the process chamber through the first reaction gas supply pipe 210 and the second reaction gas supply pipe 220. )

Thereafter, the controller 600 operates the exhaust pump 140 provided under the process chamber 100 to discharge residual gas remaining in the process chamber 100 and the plasma supply pipe 413. S2413)

Thereafter, the control unit 600 opens the first cleaning valve 512 and / or the second cleaning valve 522 to simultaneously or sequentially turn off the first cleaning gas and / or the second cleaning gas. ) And RF power to the remote plasma generating unit 410 to activate the first cleaning gas and / or the second cleaning gas with plasma active species or ions.

Thereafter, the control unit 600 opens the open / close valve 415. (S2415)

Accordingly, the controller 600 communicates the remote plasma generating unit 410 with the process chamber and supplies the plasma active species to the plasma supply pipe 413 and the process chamber 100 through the plasma supply pipe. (S2417)

As another embodiment, as shown in FIG. 6, the controller 600 may perform a cleaning process using a purge gas.

Specifically, referring to FIG. 6, referring to the cleaning step according to another embodiment of the present invention, first, the controller 600 controls the first supply valve 212 and the second supply valve 222. The first purge valve 232 and the second purge gas supply pipe 240 of the first purge gas supply pipe 230 connected to the first reaction gas supply pipe 210 and the second reaction gas supply pipe 220 in the open state. The second purge valve 242 is opened to supply the first purge gas and the second purge gas to the plasma supply pipe 413 and the process chamber 100. (S2421) The purge gas is supplied from the reaction gas supply pipe to the plasma supply pipe. Since it is supplied to 413, the backflow phenomenon from the plasma supply pipe 413 to the reaction gas supply pipe is prevented. Of course, at this time, since the on-off valve is also in a closed state, backflow of the purge gas to the plasma supply pipe 413 may be prevented.

Thereafter, the controller 600 operates the exhaust pump 140 provided at the lower portion of the process chamber 100 to discharge residual gas remaining in the process chamber 100 and the plasma supply pipe 413. )

Thereafter, the control unit 600 supplies RF power and cleaning gas to the remote plasma generating unit 410 to form plasma active species of the cleaning gas.

Thereafter, the controller 600 opens the open / close valve 415 in a state in which the first purge gas and the second purge gas are supplied to the plasma supply pipe 413 and the process chamber 100. )

Accordingly, the controller 600 communicates the remote plasma generating unit 410 with the process chamber and supplies the plasma active species to the plasma supply pipe 413 and the process chamber 100 through the plasma supply pipe. (S2427)

Although illustrated and described in the specific embodiments to illustrate the technical spirit of the present invention, the present invention is not limited to the same configuration and operation as the specific embodiment as described above, within the limits that various modifications do not depart from the scope of the invention It can be carried out in. Therefore, such modifications should also be regarded as belonging to the scope of the present invention, and the scope of the present invention should be determined by the claims below.

(Explanation of the sign)

1000: Substrate Processing Equipment

100: process chamber

210: first reaction gas supply pipe

220: second reaction gas supply pipe

230: first purge gas supply pipe

240: second purge gas supply pipe

410: remote plasma generating unit

415: on-off valve

510: first cleaning gas pipe

520: second cleaning gas pipe

According to the above-mentioned problem solving means, the present invention by separating the first reaction gas supply pipe and the second reaction gas supply pipe and the cleaning gas pipe around the on-off valve, generated by the chemical reaction of the first reaction gas supply and the second reaction gas Since foreign matters such as particles, which are by-products, can be prevented from being formed in the cleaning gas pipe, the yield of the substrate processing apparatus can be improved, and the cleaning power and the cleaning efficiency of the substrate processing apparatus can be improved. Therefore, there is industrial applicability.

Claims

Process chamber;

A plurality of gas supply pipes supplying gas or plasma active species into the process chamber;

A remote plasma generation unit connected to one gas supply pipe among the plurality of gas supply pipes;

And an opening / closing valve for selectively blocking the one gas supply pipe between the remote plasma generating unit and the process chamber in the one gas supply pipe.
The method of claim 1,

The substrate processing apparatus further includes a control unit for controlling the process chamber, the remote plasma generating unit, and the open / close valve,

The control unit is a substrate processing apparatus, characterized in that for controlling the on-off valve so that the reaction gas does not flow into the one gas supply pipe.
The method of claim 2,

And the controller controls the opening / closing valve to block the flow of the plasma supply pipe when the substrate deposition process is started in the process chamber or before a predetermined time.
The method of claim 2,

And the control unit controls the on / off valve to open the flow of the plasma supply pipe when the cleaning process of the substrate processing apparatus starts.
Process chamber;

A remote plasma generation unit provided upstream of the process chamber;

A plasma supply pipe connecting the process chamber and the remote plasma generator;

And an on / off valve provided in the plasma supply pipe to selectively block the plasma supply pipe.

The on-off valve is configured or operated to allow forward flow from the remote plasma generator to the process chamber, but to block reverse flow from the process chamber to the remote plasma generator. Device.
The method of claim 5,

Upstream of the remote plasma generating unit, at least one cleaning gas pipe for supplying at least one cleaning gas to the remote plasma generating unit is connected,

Substrate processing apparatus, characterized in that at least one reaction gas supply pipe for supplying at least one reaction gas to the process chamber downstream of the on-off valve in the plasma supply pipe.
Process chamber;

A plurality of gas supply pipes supplying gas or plasma active species into the process chamber;

A remote plasma generation unit connected to one gas supply pipe among the plurality of gas supply pipes;

Between the remote plasma generating unit and the process chamber in the one gas supply pipe, an opening and closing valve for opening the one gas supply pipe is provided only in a state in which there is no reactive gas material in the process chamber and the one gas supply pipe. Substrate processing apparatus, characterized in that.
Process chamber;

A cleaning gas supply pipe connected to the process chamber;

A remote chamber connected to the cleaning gas supply pipe;

A reaction gas supply pipe connected to the cleaning gas supply pipe; And

And an inlet blocking means for blocking the inflow of the reaction gas into the remote chamber when the reaction gas supply pipe is opened.
The method of claim 8,

And said inlet blocking means is an on / off valve.
The method of claim 8,

The substrate processing apparatus further comprises a control unit for controlling the process chamber, the remote chamber and the inflow blocking means.
The method of claim 8,

The inlet blocking means includes a first valve connected to a first reaction gas supply pipe, a second valve connected to a second reaction gas supply pipe, and a third valve connected to the cleaning gas supply pipe,

And the first valve and the second valve are cut off when the third valve is opened.