WO2014153844A1 - Array substrate and display device - Google Patents

Array substrate and display device Download PDF

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Publication number
WO2014153844A1
WO2014153844A1 PCT/CN2013/076956 CN2013076956W WO2014153844A1 WO 2014153844 A1 WO2014153844 A1 WO 2014153844A1 CN 2013076956 W CN2013076956 W CN 2013076956W WO 2014153844 A1 WO2014153844 A1 WO 2014153844A1
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WO
WIPO (PCT)
Prior art keywords
electrode
pixel
slit
pixel unit
array substrate
Prior art date
Application number
PCT/CN2013/076956
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French (fr)
Chinese (zh)
Inventor
王国磊
李小和
马睿
胡明
Original Assignee
合肥京东方光电科技有限公司
京东方科技集团股份有限公司
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Publication of WO2014153844A1 publication Critical patent/WO2014153844A1/en

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/122Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/128Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode field shaping

Definitions

  • Embodiments of the present invention relate to an array substrate and a display device. Background technique
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • ADS Advanced Super Dimension Switch, ADSDS, Advanced Super Dimensional Field Conversion Technology, ADS
  • TFT-LCD has high resolution, high transmittance, low power consumption, wide viewing angle, high aperture ratio, low chromatic aberration, no
  • squeezed water ripple push Mura
  • the ADS type TFT-LCD forms a multi-dimensional electric field by the electric field generated by the edge of the slit electrode in the same plane and the electric field generated between the slit electrode layer and the plate electrode layer, so that the slit electrode between the liquid crystal cell and the electrode are directly above All oriented liquid crystal molecules are capable of rotating, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency, thereby improving the picture quality of the TFT-LCD product.
  • the display panel of the existing HADS type TFT-LCD generally adopts a dual gate driving method (Dual Gate), wherein the array substrate includes a village substrate.
  • each of the pixel units including a thin film transistor (TFT), and a pixel electrode (Pixel electrode) and a common electrode (Com) for forming an electric field
  • TFT thin film transistor
  • Pixel electrode Pixel electrode
  • Com common electrode
  • the pixel electrode and the common electrode are used to drive liquid crystal molecules corresponding to the pixel unit to be deflected; the source of the thin film transistor located in adjacent pixel units on both sides of one data line is connected to the data line (Data line)
  • the gates are respectively connected to different gate lines such that two gate lines are disposed between adjacent pixel units of two rows.
  • the pixel unit of the conventional HADS type TFT-LCD generally has a single domain structure (1-Domain), wherein the direction of the multi-dimensional electric field generated between the pixel electrode and the common electrode in each pixel unit is uniform, so each pixel unit The deflection directions of the corresponding liquid crystal molecules are also uniform.
  • liquid crystal molecules have different refractive indices at different viewing angles, and their optical path differences are also different, resulting in different wavelength ranges of transmitted light, which results in different chromaticities of liquid crystal molecules at different viewing angles, that is, color shift phenomenon. .
  • One of the technical problems to be solved by the present invention is to provide an array substrate and a display device capable of compensating for color shift and avoiding light leakage in view of the above-described drawbacks in the prior art.
  • An embodiment of the present invention provides an array substrate including a substrate substrate on which a plurality of gate lines and a plurality of data lines along a first direction and a second direction intersecting each other are formed, and a plurality of pixel units each of which is arranged in a first direction and a second direction, each of the pixel units including a thin film transistor and a pixel electrode and a common electrode for forming an electric field,
  • At least one of the common electrode and the pixel electrode of each pixel unit comprises a slit electrode with a slit bent, and a corresponding gate line is disposed at a slit of the slit electrode of the slit electrode, and is located at the data line
  • the sources of the thin film transistors in the adjacent pixel units on both sides are connected to the same data line, and the gates are respectively connected to different gate lines.
  • the slit bend of the slit electrode in each pixel unit is located in the middle of the pixel unit.
  • the pixel electrode of each pixel unit and the common electrode intersect with the corresponding gate line, and the corresponding gate line passes through the middle of the pixel unit.
  • the slit electrode includes a plurality of slits intersecting with respective gate lines, and having different extending directions on both sides of the gate line to form a bend at the position of the gate line fold.
  • a plurality of slits of the slit electrode in the same pixel unit are disposed in parallel.
  • two adjacent pixel units in the gate line direction are shifted by half of the length of the pixel unit in a direction perpendicular to the gate line, such that the corresponding gate line passes through the adjacent two pixel sheets.
  • the edge of one pixel unit in the element passes through the middle of the other pixel unit, and the distance between the adjacent two gate lines is equal to half the length of the pixel unit in the direction perpendicular to the gate line.
  • the gate line extends in a straight line along the first direction
  • the data line extends in a fold line along the second direction
  • the slit electrodes are symmetrical with respect to the gate line in the extending direction of the slits on both sides of the respective gate lines crossing the same.
  • the slits of the slit electrodes in the adjacent two pixel units in the gate line direction are bent in opposite directions; the slit electrodes in the adjacent two pixel units in the direction perpendicular to the gate lines The seams are bent in the same direction.
  • the array substrate further includes a common electrode line formed on the substrate of the substrate, and the common electrode in each pixel unit is connected to the common electrode line;
  • the common electrode line and the data line are alternately arranged on the substrate of the village and are parallel to each other;
  • the pixel electrode and the common electrode in each pixel unit are located between a data line and a common electrode line adjacent to the data line.
  • the slits are parallel.
  • the drain of the thin film transistor in each pixel unit is connected to the pixel electrode in the pixel unit;
  • the array substrate further includes a passivation layer disposed between the common electrode and the pixel electrode.
  • the common electrode in each pixel unit is a slit electrode including a bend, and the pixel electrode is a plate electrode;
  • the pixel electrode in each pixel unit is a slit electrode including a bend, and the common electrode is a plate electrode;
  • the common electrode and the pixel electrode in each of the pixel units are slit electrodes including a bend.
  • Another embodiment of the present invention provides a display device comprising an array substrate according to any of the embodiments of the present invention.
  • the common electrode and the pixel electrode in each pixel unit on the array substrate in the embodiment of the present invention have at least one slit electrode including a slit bent, so that the common electrode and the pixel in each pixel unit
  • the direction of the electric field formed between the electrodes includes two directions, so that the deflection direction of the liquid crystal molecules corresponding to each pixel unit is also divided into two types, so each pixel unit can be divided into two regions with different viewing angles, effectively compensating The color shift caused by the liquid crystal molecules having only a single deflection direction.
  • a grating line is disposed at a bend of the slit electrode in each pixel unit, which effectively avoids light leakage caused by a dark region formed at a bend of the slit electrode.
  • FIG. 1 is a schematic plan view showing the planar structure of the array substrate after the step s101 is completed in the second embodiment of the present invention
  • FIG. 2 is a schematic diagram showing the planar structure of the array substrate after the step s102 is completed in the second embodiment of the present invention
  • FIG. 4 is a schematic plan view showing the planar structure of the array substrate after the step s10 is completed in the second embodiment of the present invention
  • FIG. 5 is a schematic plan view showing the planar structure of the array substrate after the step s105 is completed in the second embodiment of the present invention.
  • the embodiment provides an array substrate, comprising a substrate substrate, a plurality of horizontally and vertically interlaced gate lines and a plurality of data lines formed on the substrate substrate, and a plurality of pixel units uniformly arranged, each pixel unit Each includes a thin film transistor, and a pixel electrode and a common electrode for forming an electric field.
  • the plurality of gate lines and the plurality of data lines are not limited to the arrangement of the horizontal and vertical staggered.
  • the plurality of gate lines and the plurality of data lines may extend in a first direction and a second direction that intersect each other in a plane of the substrate. At this time, multiple The pixel units are also arranged in the first direction and the second direction.
  • Each of the common electrode and the pixel electrode of each pixel unit has at least one slit electrode including a slit bent such that an electric field direction formed between the common electrode and the pixel electrode in each pixel unit includes two directions, thereby
  • the deflection direction of the liquid crystal molecules corresponding to each pixel unit is also divided into two types, and the pixel unit corresponding to the liquid crystal molecules having two deflection directions is divided into two regions with different viewing angles, effectively compensating for only a single deflection direction. Color shift caused by liquid crystal molecules;
  • a gate line (a gate line corresponding to the pixel unit) is disposed at a slit of the slit electrode in each pixel unit to avoid a dark area formed at a bend of the slit electrode Leakage phenomenon
  • the sources of the thin film transistors in the pixel cells adjacent to both sides of the data line are connected to the same data line, and the gates are respectively connected to different gate lines (the different gate lines may be adjacent gate lines, also It may be a non-adjacent gate line), that is, the array substrate adopts a double gate driving method.
  • slit slits of the slit electrodes in each pixel unit are located in the middle of the pixel unit; slits of the slit electrodes in the same pixel unit are disposed in parallel.
  • the electric field distribution in the two directions formed between the common electrode and the pixel electrode in each pixel unit is the same (or almost the same), thereby better compensating for the color shift.
  • the pixel electrode of each pixel unit and the common electrode intersect with the corresponding gate line, and the corresponding gate line passes through the middle of the pixel unit.
  • the slit electrode includes a plurality of slits that intersect the corresponding gate lines and have different extending directions on both sides of the gate lines to form a bend at the position of the gate lines.
  • the positions of two adjacent pixel units on the substrate substrate in the direction of the gate line are staggered so that the gate lines are straight lines, and the distance between adjacent two gate lines is equal to the pixel unit Half of the length in the direction perpendicular to the gate line, that is, any adjacent two gate lines are equally spaced.
  • the gate lines are disposed between adjacent two rows of pixel units, and in this embodiment, each gate line is alternately disposed in the middle of the pixel unit and adjacent rows of pixels. Between the cells, the arrangement of the gate lines in this embodiment increases the aperture ratio as compared with the prior art.
  • two adjacent pixel units in the gate line direction are shifted by half of the length of the pixel unit in a direction perpendicular to the gate line, such that the corresponding gate line passes through one of the adjacent two pixel units.
  • the edge passes through the middle of the other pixel unit, and the distance between the adjacent two gate lines is equal to half the length of the pixel unit in the direction perpendicular to the gate line.
  • the slits of the slit electrodes in the adjacent two pixel units in the gate line direction are bent in opposite directions; the slits of the slit electrodes in the adjacent two pixel units in the direction perpendicular to the gate lines are bent.
  • the directions are the same so that more pixel units can be arranged on the substrate of the village.
  • the array substrate further includes a common electrode line formed on the substrate of the substrate, and the common electrode in each pixel unit is connected to the common electrode line; the common electrode line and the data line are alternately arranged on the substrate of the substrate and Parallel to each other; the pixel electrode and the common electrode in each pixel unit are located between a data line and a common electrode line adjacent to the data line.
  • a data line connected to the source of the thin film transistor in each pixel unit, and a common electrode line connected to the common electrode in each pixel unit are parallel to the slit of the slit electrode of the corresponding portion of the pixel unit.
  • the pixel unit adopting such a structure has a higher aperture ratio when arranged on the substrate of the substrate, and is also advantageous for the arrangement of the pixel unit on the substrate substrate.
  • the gate lines extend in a straight line in the first direction
  • the data lines extend in the form of a broken line in the second direction.
  • extending in the second direction in the form of a broken line does not mean that each portion of the fold line is strictly in the second direction, but the overall direction of the fold line is along the second direction, and the extending direction of each portion may deviate from the second direction. .
  • each of the slit electrodes is symmetrical with respect to the gate line in a direction in which the slits on both sides of the respective gate lines crossing the same.
  • the drain of the thin film transistor in each pixel unit is connected to the pixel electrode in the pixel unit; the array substrate further includes a passivation layer disposed between the common electrode and the pixel electrode.
  • the common electrode in each pixel unit is a slit electrode including a bend, and the pixel electrode is a plate electrode;
  • the pixel electrode in each pixel unit is a slit electrode including a bend, and the common electrode is a plate electrode;
  • the common electrode and the pixel electrode in each of the pixel units are slit electrodes including a bend.
  • the embodiment also provides a display device including the above array substrate.
  • the display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any display product or component.
  • This embodiment provides an array substrate, including a village substrate, which is formed on a substrate substrate.
  • Each of the pixel units includes a thin film transistor, and a pixel electrode and a common electrode for forming an electric field; wherein, the common electrode in each pixel unit is a slit electrode including a bend, and the pixel electrode is a plate electrode, a grid line is disposed at a bend of the common electrode (ie, the slit electrode) to prevent light leakage in the dark region formed at the bend, and a bend of the common electrode is located in a middle portion of the pixel unit, that is, The gate lines are located in the middle of the pixel unit; the slits of the common electrodes in the same pixel unit are all arranged in parallel; each thin film transistor includes a gate, a semiconductor layer (also referred to as an active layer), a source and a drain .
  • the common electrode in each pixel unit is a slit electrode including a bend
  • the pixel electrode is a plate electrode
  • a grid line is disposed at a bend of the common electrode (ie, the slit
  • the sources of the thin film transistors in the adjacent pixel units on both sides of the same data line are connected to the same data line, and the gates are respectively connected to different two gate lines (two adjacent pixels as shown in FIG. 5)
  • the gate of the cell is connected to the adjacent two gate lines, which is only one of the cases.
  • the drain is connected to the corresponding pixel electrode, that is, the array substrate in this embodiment adopts a double gate driving mode.
  • the positions of two adjacent pixel units on the substrate substrate in the direction of the gate line are staggered so that the gate lines are all straight lines, and the distance between adjacent two gate lines is equal to the pixel unit in the gate Half the length of the line in the vertical direction.
  • the slits of the common electrodes of the adjacent two pixel units in the direction of the gate line are bent in opposite directions; the slits of the common electrodes of the adjacent two pixel units in the direction perpendicular to the gate lines are bent in the same direction.
  • the common electrode line is connected to a common electrode in each pixel unit for supplying a voltage to the common electrode; the common electrode line and the data line are alternately arranged on the village substrate and parallel to each other; pixels in each pixel unit
  • the electrode and the common electrode are both located between a data line and a common electrode line adjacent to the data line.
  • a data line connected to the source of the thin film transistor in each pixel unit, and a common electrode line connected to the common electrode in each pixel unit are parallel to the slit of the slit electrode of the corresponding portion in the pixel unit.
  • the gate insulating layer is disposed between the gate of the thin film transistor and the semiconductor layer in each pixel unit, and the passivation layer is disposed between the common electrode and the pixel electrode to function as an insulating layer.
  • the embodiment also provides a display device including the above array substrate.
  • the display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any display product or component.
  • FIGS. The method for fabricating the array substrate of the present embodiment will be described in detail below with reference to FIGS. Although A plurality of pixel units arranged in a row are formed on the array substrate of the embodiment, but for convenience of description and understanding, only one case of the structure of two adjacent pixel units is shown in FIGS. Further, in order to facilitate observation of the respective layer patterns, the pixel electrode 8 and the common electrode 9 in the drawing are subjected to translucent processing.
  • the method comprises the following steps:
  • slOO Provides a village base substrate.
  • the substrate of the village should be cleaned and free of dust and impurity ions.
  • the substrate substrate may be a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.
  • a pattern of a gate electrode 1 and a gate line 2 are formed on a substrate (not shown) by a patterning process, and the gate electrode 1 is connected to a corresponding gate line 2.
  • a gate insulating layer (not shown) and a pattern of the semiconductor layer 3 are sequentially formed on the substrate substrate of the step s101 by a patterning process, and the gate insulating layer is completely covered.
  • the substrate substrate of the step s101 is thus also covered on the gate 1 and the gate line 2, and the semiconductor layer 3 is disposed directly above the corresponding gate 1.
  • a pattern of the source electrode 4, the drain electrode 5, the data line 6, and the common electrode line 7 is formed on the substrate substrate of the step S102 by a patterning process, and the source electrode 4 and the drain electrode 5 are respectively Connected to the semiconductor layer 3, and a channel is formed between the source 4 and the drain 5, and the source 4 is connected to the corresponding data line 6.
  • Step s102 and step s03 can be performed by using a common mask technique and using two patterning processes, or a two-tone mask (such as a half Tone mask or a Gray Tone Mask). The technology is completed in a patterning process.
  • a pattern of the plate-like pixel electrode 8 is formed on the substrate of the substrate at step sl03 by a patterning process, and the pixel electrode 8 is connected to the corresponding drain 5.
  • a pattern of a passivation layer (not shown) and a common electrode 9 are sequentially formed on the substrate of the substrate at step S104 by a patterning process, the passivation layer It is completely covered on the substrate substrate on which the step S104 is completed, and a via hole for connecting the common electrode 9 and the common electrode line 7 is formed on the passivation layer.
  • the patterning process described above generally includes a process of photoresist coating, exposure, development, etching, photoresist stripping, and the like.
  • the above is only the exemplary embodiments of the present invention, and is not intended to limit the scope of the invention. The scope of the invention is determined by the appended claims.

Abstract

An array substrate and a display device. The array substrate comprises a base substrate. Multiple grid lines and multiple data lines are formed on the base substrate along a first direction and a second direction that intersect, multiple pixel units arranged evenly are further formed thereon, and each pixel unit comprises a thin film transistor, and a pixel electrode and a common electrode for forming an electric field; at least one of the common electrode and the pixel electrode of each pixel unit comprises a slit electrode with a bent slit, a corresponding grid line is disposed at the slit bent position of the slit electrode, sources of the thin film transistors of the adjacent pixel units at two sides of the data line are connected to the same data line, and gates thereof are connected to different grid lines separately.

Description

阵列基板及显示装置 技术领域  Array substrate and display device
本发明的实施例涉及一种阵列基板及显示装置。 背景技术  Embodiments of the present invention relate to an array substrate and a display device. Background technique
随着显示器制造技术的发展, 液晶显示器技术发展迅速, 已经逐渐取代 了传统的显像管显示器而成为未来平板显示器的主流。 在液晶显示器技术领 域中, TFT-LCD ( Thin Film Transistor Liquid Crystal Display, 薄膜晶体管液 晶显示器) 以其大尺寸、 高度集成、 功能强大、 工艺灵活、 低成本等优势而 广泛应用于电视机、 电脑、 手机等领域。  With the development of display manufacturing technology, liquid crystal display technology has developed rapidly, and has gradually replaced the traditional picture tube display and become the mainstream of future flat panel displays. In the field of liquid crystal display technology, TFT-LCD (Thin Film Transistor Liquid Crystal Display) is widely used in televisions, computers, etc. due to its large size, high integration, powerful functions, flexible technology, and low cost. Mobile phones and other fields.
ADS ( ADvanced Super Dimension Switch, ADSDS, 高级超维场转换技 术, 筒称 ADS )型 TFT-LCD由于具有高分辨率、 高透过率、 低功耗、 宽视 角、 高开口率、 低色差、 无挤压水波纹(push Mura )等优点, 广泛应用于液 晶显示器领域。 ADS型 TFT-LCD通过同一平面内狭缝状电极边缘所产生的 电场以及狭缝状电极层与板状电极层间产生的电场形成多维电场, 使液晶盒 内狭缝状电极间、 电极正上方所有取向液晶分子都能够产生旋转, 从而提高 了液晶工作效率并增大了透光效率, 进而提高了 TFT-LCD产品的画面品质。  ADS (ADvanced Super Dimension Switch, ADSDS, Advanced Super Dimensional Field Conversion Technology, ADS) TFT-LCD has high resolution, high transmittance, low power consumption, wide viewing angle, high aperture ratio, low chromatic aberration, no The advantages of squeezed water ripple (push Mura) are widely used in the field of liquid crystal displays. The ADS type TFT-LCD forms a multi-dimensional electric field by the electric field generated by the edge of the slit electrode in the same plane and the electric field generated between the slit electrode layer and the plate electrode layer, so that the slit electrode between the liquid crystal cell and the electrode are directly above All oriented liquid crystal molecules are capable of rotating, thereby improving the liquid crystal working efficiency and increasing the light transmission efficiency, thereby improving the picture quality of the TFT-LCD product.
为了提高开口率从而提高显示装置的透过率, 出现了一种 HADS ( High aperture ADS, 高开口率-高级超维场转换技术)型 TFT-LCD。 进一步地, 为 了缩短像素充电时间以实现低成本、 高品质的画面显示, 现有的 HADS 型 TFT-LCD的显示面板通常采用双栅驱动方式(Dual Gate ) , 其中的阵列基板 包括村底基板, 形成在村底基板上的栅线、 数据线以及均匀排列的多个像素 单元, 每个像素单元均包括薄膜晶体管 (TFT ) , 和用于形成电场的像素电 极 ( Pixel electrode )与公共电极 ( Com electrode ) , 所述像素电极和公共电 极用于驱动该像素单元对应的液晶分子偏转; 位于一条数据线两侧相邻的像 素单元中的薄膜晶体管的源极均连接至该数据线(Data line ) , 栅极分别连 接至不同的栅线(Gate line ) , 使得每两行相邻的像素单元之间均设置有两 条栅线。 现有的 HADS型 TFT-LCD的像素单元一般为单畴结构 ( 1 -Domain ) , 其中, 每个像素单元内的像素电极和公共电极之间产生的多维电场的方向一 致, 故每个像素单元对应的液晶分子的偏转方向也一致。 但是, 液晶分子在 不同视角下的折射率不同, 其光程差也不同, 导致其透过光波长范围不同, 因而造成在不同视角时, 液晶分子的色度有差异, 也即产生色偏现象。 例如, 在平行于液晶分子的光轴方向时,透过光波长偏小,产生偏蓝现象(Bluish ) , 在垂直于液晶分子的光轴方向时, 透过光波长偏大, 产生偏黄现象 ( Yellowish ) 。 也就是说, 由于采用单畴结构, 每个像素单元对应的液晶分 子的偏转方向均一致, 导致液晶面板的整体色偏较为严重。 发明内容 In order to increase the aperture ratio and thereby improve the transmittance of the display device, a HADS (High aperture ADS, high aperture ratio - advanced super-dimensional field conversion technology) type TFT-LCD has appeared. Further, in order to shorten the pixel charging time to realize low-cost, high-quality picture display, the display panel of the existing HADS type TFT-LCD generally adopts a dual gate driving method (Dual Gate), wherein the array substrate includes a village substrate. a gate line, a data line, and a plurality of pixel units uniformly arranged on the substrate of the substrate, each of the pixel units including a thin film transistor (TFT), and a pixel electrode (Pixel electrode) and a common electrode (Com) for forming an electric field The pixel electrode and the common electrode are used to drive liquid crystal molecules corresponding to the pixel unit to be deflected; the source of the thin film transistor located in adjacent pixel units on both sides of one data line is connected to the data line (Data line) The gates are respectively connected to different gate lines such that two gate lines are disposed between adjacent pixel units of two rows. The pixel unit of the conventional HADS type TFT-LCD generally has a single domain structure (1-Domain), wherein the direction of the multi-dimensional electric field generated between the pixel electrode and the common electrode in each pixel unit is uniform, so each pixel unit The deflection directions of the corresponding liquid crystal molecules are also uniform. However, liquid crystal molecules have different refractive indices at different viewing angles, and their optical path differences are also different, resulting in different wavelength ranges of transmitted light, which results in different chromaticities of liquid crystal molecules at different viewing angles, that is, color shift phenomenon. . For example, when parallel to the optical axis direction of the liquid crystal molecules, the wavelength of the transmitted light is small, resulting in a bluish phenomenon (Bluish), and when the optical axis is perpendicular to the optical axis of the liquid crystal molecule, the wavelength of the transmitted light is too large, causing a yellowish phenomenon. ( Yellowish ). That is to say, due to the single domain structure, the deflection directions of the liquid crystal molecules corresponding to each pixel unit are uniform, resulting in a serious color shift of the liquid crystal panel. Summary of the invention
本发明所要解决的技术问题之一是针对现有技术中所存在的上述缺陷, 提供一种既能够补偿色偏, 又能够避免漏光的阵列基板及显示装置。  One of the technical problems to be solved by the present invention is to provide an array substrate and a display device capable of compensating for color shift and avoiding light leakage in view of the above-described drawbacks in the prior art.
本发明的一个实施例提供一种阵列基板, 包括村底基板, 所述村底基板 上形成有沿相互交叉的第一方向和第二方向的多条栅线和多条数据线、 以及 沿所述第一方向和所述第二方向均勾排列的多个像素单元, 每个像素单元均 包括薄膜晶体管以及用于形成电场的像素电极与公共电极,  An embodiment of the present invention provides an array substrate including a substrate substrate on which a plurality of gate lines and a plurality of data lines along a first direction and a second direction intersecting each other are formed, and a plurality of pixel units each of which is arranged in a first direction and a second direction, each of the pixel units including a thin film transistor and a pixel electrode and a common electrode for forming an electric field,
其中, 每个像素单元所述的公共电极与像素电极至少之一包括狭缝弯折 的狭缝电极, 且在所述狭缝电极的狭缝弯折处设置有相应的栅线, 位于数据 线两侧相邻的所述像素单元中的薄膜晶体管的源极均连接至同一数据线, 栅 极分别连接至不同的栅线。  Wherein at least one of the common electrode and the pixel electrode of each pixel unit comprises a slit electrode with a slit bent, and a corresponding gate line is disposed at a slit of the slit electrode of the slit electrode, and is located at the data line The sources of the thin film transistors in the adjacent pixel units on both sides are connected to the same data line, and the gates are respectively connected to different gate lines.
在一个示例中, 每个像素单元中的所述狭缝电极的狭缝弯折处均位于所 述像素单元的中部。  In one example, the slit bend of the slit electrode in each pixel unit is located in the middle of the pixel unit.
在一个示例中, 在平面图中看, 每个像素单元的像素电极与公共电极与 相应的栅线交叉, 并且该相应的栅线从该像素单元的中部穿过。  In one example, as seen in plan view, the pixel electrode of each pixel unit and the common electrode intersect with the corresponding gate line, and the corresponding gate line passes through the middle of the pixel unit.
在一个示例中, 所述狭缝电极包括多个狭缝, 所述多个狭缝与相应的栅 线交叉,且在该栅线两侧具有不同的延伸方向从而在该栅线的位置形成弯折。  In one example, the slit electrode includes a plurality of slits intersecting with respective gate lines, and having different extending directions on both sides of the gate line to form a bend at the position of the gate line fold.
在一个示例中,同一像素单元中的所述狭缝电极的多个狭缝平行地设置。 在一个示例中, 栅线方向上相邻两个像素单元在与栅线垂直的方向上错 开所述像素单元的长度的一半, 以使得相应的栅线经过所述相邻两个像素单 元中一个像素单元的边缘而穿过另一个像素单元的中部, 且相邻两条栅线之 间的距离等于所述像素单元在与栅线垂直的方向上的长度的一半。 In one example, a plurality of slits of the slit electrode in the same pixel unit are disposed in parallel. In one example, two adjacent pixel units in the gate line direction are shifted by half of the length of the pixel unit in a direction perpendicular to the gate line, such that the corresponding gate line passes through the adjacent two pixel sheets. The edge of one pixel unit in the element passes through the middle of the other pixel unit, and the distance between the adjacent two gate lines is equal to half the length of the pixel unit in the direction perpendicular to the gate line.
在一个示例中, 所述栅线沿所述第一方向以直线形式延伸, 所述数据线 沿所述第二方向以折线形式延伸。  In one example, the gate line extends in a straight line along the first direction, and the data line extends in a fold line along the second direction.
在一个示例中, 所述狭缝电极在与其交叉的相应栅线两侧的狭缝的延伸 方向相对于该栅线对称。  In one example, the slit electrodes are symmetrical with respect to the gate line in the extending direction of the slits on both sides of the respective gate lines crossing the same.
在一个示例中, 所述栅线方向上相邻两个像素单元中的狭缝电极的狭缝 弯折方向相反; 与栅线垂直的方向上相邻两个像素单元中的狭缝电极的狭缝 弯折方向相同。  In one example, the slits of the slit electrodes in the adjacent two pixel units in the gate line direction are bent in opposite directions; the slit electrodes in the adjacent two pixel units in the direction perpendicular to the gate lines The seams are bent in the same direction.
在一个示例中, 所述阵列基板还包括形成在村底基板上的公共电极线, 每个像素单元中的公共电极均与公共电极线相连;  In one example, the array substrate further includes a common electrode line formed on the substrate of the substrate, and the common electrode in each pixel unit is connected to the common electrode line;
所述公共电极线与数据线在村底基板上交替布置且相互平行;  The common electrode line and the data line are alternately arranged on the substrate of the village and are parallel to each other;
每个像素单元中的像素电极与公共电极均位于一数据线以及与该数据线 相邻的一条公共电极线之间。  The pixel electrode and the common electrode in each pixel unit are located between a data line and a common electrode line adjacent to the data line.
在一个示例中, 与每个像素单元中薄膜晶体管的源极相连的数据线, 以 及与每个像素单元中的公共电极相连的公共电极线, 均与该像素单元中相对 应部分的狭缝电极的狭缝平行。  In one example, a data line connected to a source of a thin film transistor in each pixel unit, and a common electrode line connected to a common electrode in each pixel unit, and a slit electrode corresponding to a corresponding portion of the pixel unit The slits are parallel.
在一个示例中, 每个像素单元中薄膜晶体管的漏极均与该像素单元中的 像素电极连接;  In one example, the drain of the thin film transistor in each pixel unit is connected to the pixel electrode in the pixel unit;
所述阵列基板还包括钝化层, 所述钝化层设置在公共电极与像素电极之 间。  The array substrate further includes a passivation layer disposed between the common electrode and the pixel electrode.
在一个示例中, 每个像素单元中的公共电极为包括弯折的狭缝电极, 像 素电极为板状电极;  In one example, the common electrode in each pixel unit is a slit electrode including a bend, and the pixel electrode is a plate electrode;
或者, 每个像素单元中的像素电极为包括弯折的狭缝电极, 公共电极为 板状电极;  Or the pixel electrode in each pixel unit is a slit electrode including a bend, and the common electrode is a plate electrode;
或者,每个像素单元中的公共电极和像素电极均为包括弯折的狭缝电极。 本发明的另一个实施例提供一种显示装置, 包括根据本发明任一实施例 的阵列基板。  Alternatively, the common electrode and the pixel electrode in each of the pixel units are slit electrodes including a bend. Another embodiment of the present invention provides a display device comprising an array substrate according to any of the embodiments of the present invention.
本发明实施例所述阵列基板上每个像素单元中的公共电极与像素电极至 少有一个包括狭缝弯折的狭缝电极, 使得每个像素单元中的公共电极与像素 电极之间形成的电场方向包括两种方向, 从而使得每个像素单元对应的液晶 分子的偏转方向也分为两种, 因此每个像素单元均可分为两个视角不同的区 域, 有效地补偿了因液晶分子只具有单一偏转方向而引起的色偏。 每个像素 单元中的狭缝电极的弯折处均设置有一栅线, 有效地避免了在狭缝电极的弯 折处形成的暗区所引起的漏光现象。 附图说明 The common electrode and the pixel electrode in each pixel unit on the array substrate in the embodiment of the present invention have at least one slit electrode including a slit bent, so that the common electrode and the pixel in each pixel unit The direction of the electric field formed between the electrodes includes two directions, so that the deflection direction of the liquid crystal molecules corresponding to each pixel unit is also divided into two types, so each pixel unit can be divided into two regions with different viewing angles, effectively compensating The color shift caused by the liquid crystal molecules having only a single deflection direction. A grating line is disposed at a bend of the slit electrode in each pixel unit, which effectively avoids light leakage caused by a dark region formed at a bend of the slit electrode. DRAWINGS
为了更清楚地说明本发明实施例的技术方案, 下面将对实施例的附图作 筒单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例, 而非对本发明的限制。  In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below. It is obvious that the drawings in the following description relate only to some embodiments of the present invention, rather than to the present invention. limit.
图 1为本发明实施例 2中完成步骤 slOl后阵列基板的平面结构示意图; 图 2为本发明实施例 2中完成步骤 sl02后阵列基板的平面结构示意图; 图 3为本发明实施例 2中完成步骤 sl03后阵列基板的平面结构示意图; 图 4为本发明实施例 2中完成步骤 sl04后阵列基板的平面结构示意图; 图 5为本发明实施例 2中完成步骤 sl05后阵列基板的平面结构示意图。 具体实施方式  1 is a schematic plan view showing the planar structure of the array substrate after the step s101 is completed in the second embodiment of the present invention; FIG. 2 is a schematic diagram showing the planar structure of the array substrate after the step s102 is completed in the second embodiment of the present invention; FIG. 4 is a schematic plan view showing the planar structure of the array substrate after the step s10 is completed in the second embodiment of the present invention; FIG. 5 is a schematic plan view showing the planar structure of the array substrate after the step s105 is completed in the second embodiment of the present invention. detailed description
为使本发明实施例的目的、 技术方案和优点更加清楚, 下面将结合本发 明实施例的附图,对本发明实施例的技术方案进行清楚、 完整地描述。显然, 所描述的实施例是本发明的一部分实施例, 而不是全部的实施例。 基于所描 述的本发明的实施例, 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例, 都属于本发明保护的范围。  The technical solutions of the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings of the embodiments of the present invention. It is apparent that the described embodiments are part of the embodiments of the invention, rather than all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the described embodiments of the present invention without departing from the scope of the invention are within the scope of the invention.
为使本领域技术人员更好地理解本发明的技术方案, 下面结合附图和实 施例对本发明所述阵列基板及显示装置作进一步详细描述。  In order to enable those skilled in the art to better understand the technical solutions of the present invention, the array substrate and display device of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments.
实施例 1 :  Example 1
本实施例提供一种阵列基板, 包括村底基板, 形成在所述村底基板上的 横纵交错的多条栅线和多条数据线、 以及均匀排列的多个像素单元, 每个像 素单元均包括薄膜晶体管, 和用于形成电场的像素电极与公共电极。 多条栅 线和多条数据线并不限于横纵交错的设置形式。 例如, 多条栅线和多条数据 线可以沿村底基板平面内相互交叉的第一方向和第二方向延伸。 此时, 多个 像素单元也沿第一方向和第二方向排列。 The embodiment provides an array substrate, comprising a substrate substrate, a plurality of horizontally and vertically interlaced gate lines and a plurality of data lines formed on the substrate substrate, and a plurality of pixel units uniformly arranged, each pixel unit Each includes a thin film transistor, and a pixel electrode and a common electrode for forming an electric field. The plurality of gate lines and the plurality of data lines are not limited to the arrangement of the horizontal and vertical staggered. For example, the plurality of gate lines and the plurality of data lines may extend in a first direction and a second direction that intersect each other in a plane of the substrate. At this time, multiple The pixel units are also arranged in the first direction and the second direction.
每个像素单元所述的公共电极与像素电极至少有一个包括狭缝弯折的狭 缝电极, 使得每个像素单元中的公共电极与像素电极之间形成的电场方向包 括两种方向,从而使得每个像素单元对应的液晶分子的偏转方向也分为两种, 并导致具有两种偏转方向的液晶分子对应的像素单元分为两个视角不同的区 域, 有效地补偿了只具有单一偏转方向的液晶分子所引起的色偏;  Each of the common electrode and the pixel electrode of each pixel unit has at least one slit electrode including a slit bent such that an electric field direction formed between the common electrode and the pixel electrode in each pixel unit includes two directions, thereby The deflection direction of the liquid crystal molecules corresponding to each pixel unit is also divided into two types, and the pixel unit corresponding to the liquid crystal molecules having two deflection directions is divided into two regions with different viewing angles, effectively compensating for only a single deflection direction. Color shift caused by liquid crystal molecules;
在每个像素单元中的狭缝电极的狭缝弯折处均设置有一栅线(与该像素 单元对应的栅线) , 以避免在所述狭缝电极的弯折处形成的暗区所引起的漏 光现象;  A gate line (a gate line corresponding to the pixel unit) is disposed at a slit of the slit electrode in each pixel unit to avoid a dark area formed at a bend of the slit electrode Leakage phenomenon
位于数据线两侧相邻的所述像素单元中的薄膜晶体管的源极均连接至同 一数据线, 栅极分别连接至不同的栅线(该不同的栅线可以是相邻的栅线, 也可以是不相邻的栅线) , 即所述阵列基板采用双栅驱动方式。  The sources of the thin film transistors in the pixel cells adjacent to both sides of the data line are connected to the same data line, and the gates are respectively connected to different gate lines (the different gate lines may be adjacent gate lines, also It may be a non-adjacent gate line), that is, the array substrate adopts a double gate driving method.
例如, 每个像素单元中的所述狭缝电极的狭缝弯折处均位于所述像素单 元的中部; 同一像素单元中的所述狭缝电极的狭缝平行设置。 使得每个像素 单元中的公共电极与像素电极之间形成的两种方向的电场分布范围相同 (或 几乎相同) , 从而更好地补偿色偏。  For example, slit slits of the slit electrodes in each pixel unit are located in the middle of the pixel unit; slits of the slit electrodes in the same pixel unit are disposed in parallel. The electric field distribution in the two directions formed between the common electrode and the pixel electrode in each pixel unit is the same (or almost the same), thereby better compensating for the color shift.
例如, 在平面图中看, 每个像素单元的像素电极与公共电极与相应的栅 线交叉, 并且该相应的栅线从该像素单元的中部穿过。 例如, 狭缝电极包括 多个狭缝, 多个狭缝与相应的栅线交叉, 且在该栅线两侧具有不同的延伸方 向从而在该栅线的位置形成弯折。  For example, as seen in plan view, the pixel electrode of each pixel unit and the common electrode intersect with the corresponding gate line, and the corresponding gate line passes through the middle of the pixel unit. For example, the slit electrode includes a plurality of slits that intersect the corresponding gate lines and have different extending directions on both sides of the gate lines to form a bend at the position of the gate lines.
例如, 栅线方向上相邻两个像素单元在村底基板上的位置均错开分布, 以使得所述栅线均为直线, 且相邻两条栅线之间的距离等于所述像素单元在 与栅线垂直的方向上的长度的一半, 即任意相邻两条栅线等间距。 现有采用 双栅驱动方式的阵列基板中, 栅线均设置在相邻两行像素单元之间, 而本实 施例中, 每条栅线均交替设置在像素单元的中部和相邻两行像素单元之间, 故本实施例中栅线的排布方式与现有技术相比, 增大了开口率。  For example, the positions of two adjacent pixel units on the substrate substrate in the direction of the gate line are staggered so that the gate lines are straight lines, and the distance between adjacent two gate lines is equal to the pixel unit Half of the length in the direction perpendicular to the gate line, that is, any adjacent two gate lines are equally spaced. In the existing array substrate using the double gate driving method, the gate lines are disposed between adjacent two rows of pixel units, and in this embodiment, each gate line is alternately disposed in the middle of the pixel unit and adjacent rows of pixels. Between the cells, the arrangement of the gate lines in this embodiment increases the aperture ratio as compared with the prior art.
例如, 栅线方向上相邻两个像素单元在与栅线垂直的方向上错开所述像 素单元的长度的一半, 从而使得相应的栅线经过所述相邻两个像素单元中一 个像素单元的边缘而穿过另一个像素单元的中部, 且相邻两条栅线之间的距 离等于所述像素单元在与栅线垂直的方向上的长度的一半。 例如, 所述栅线方向上相邻两个像素单元中的狭缝电极的狭缝弯折方向 相反; 与栅线垂直的方向上相邻两个像素单元中的狭缝电极的狭缝弯折方向 相同, 以便村底基板上能排布更多的像素单元。 For example, two adjacent pixel units in the gate line direction are shifted by half of the length of the pixel unit in a direction perpendicular to the gate line, such that the corresponding gate line passes through one of the adjacent two pixel units. The edge passes through the middle of the other pixel unit, and the distance between the adjacent two gate lines is equal to half the length of the pixel unit in the direction perpendicular to the gate line. For example, the slits of the slit electrodes in the adjacent two pixel units in the gate line direction are bent in opposite directions; the slits of the slit electrodes in the adjacent two pixel units in the direction perpendicular to the gate lines are bent. The directions are the same so that more pixel units can be arranged on the substrate of the village.
例如, 所述阵列基板还包括形成在村底基板上的公共电极线, 每个像素 单元中的公共电极均与公共电极线相连; 所述公共电极线与数据线在村底基 板上交替布置且相互平行; 每个像素单元中的像素电极与公共电极均位于一 数据线以及与该数据线相邻的一条公共电极线之间。 与每个像素单元中薄膜 晶体管的源极相连的数据线, 以及与每个像素单元中的公共电极相连的公共 电极线, 均与该像素单元中相对应部分的狭缝电极的狭缝平行。 采用这种结 构的像素单元在村底基板上排布时开口率更高, 也有利于像素单元在村底基 板上的排布。  For example, the array substrate further includes a common electrode line formed on the substrate of the substrate, and the common electrode in each pixel unit is connected to the common electrode line; the common electrode line and the data line are alternately arranged on the substrate of the substrate and Parallel to each other; the pixel electrode and the common electrode in each pixel unit are located between a data line and a common electrode line adjacent to the data line. A data line connected to the source of the thin film transistor in each pixel unit, and a common electrode line connected to the common electrode in each pixel unit are parallel to the slit of the slit electrode of the corresponding portion of the pixel unit. The pixel unit adopting such a structure has a higher aperture ratio when arranged on the substrate of the substrate, and is also advantageous for the arrangement of the pixel unit on the substrate substrate.
由以上描述以及图 5可以看到, 栅线沿第一方向以直线形式延伸, 而数 据线沿第二方向以折线形式延伸。 这里的沿第二方向以折线形式延伸并不是 指折线的每个部分均严格地沿第二方向, 而是折线的整体走向沿第二方向, 每个部分的延伸方向可能会与第二方向偏离。  As can be seen from the above description and Fig. 5, the gate lines extend in a straight line in the first direction, and the data lines extend in the form of a broken line in the second direction. Here, extending in the second direction in the form of a broken line does not mean that each portion of the fold line is strictly in the second direction, but the overall direction of the fold line is along the second direction, and the extending direction of each portion may deviate from the second direction. .
在一个示例中, 每个狭缝电极在与其交叉的相应栅线两侧的狭缝的延伸 方向相对于该栅线对称。  In one example, each of the slit electrodes is symmetrical with respect to the gate line in a direction in which the slits on both sides of the respective gate lines crossing the same.
例如, 每个像素单元中薄膜晶体管的漏极均与该像素单元中的像素电极 连接; 所述阵列基板还包括钝化层, 所述钝化层设置在公共电极与像素电极 之间。  For example, the drain of the thin film transistor in each pixel unit is connected to the pixel electrode in the pixel unit; the array substrate further includes a passivation layer disposed between the common electrode and the pixel electrode.
例如, 每个像素单元中的公共电极为包括弯折的狭缝电极, 像素电极为 板状电极;  For example, the common electrode in each pixel unit is a slit electrode including a bend, and the pixel electrode is a plate electrode;
或者, 每个像素单元中的像素电极为包括弯折的狭缝电极, 公共电极为 板状电极;  Or the pixel electrode in each pixel unit is a slit electrode including a bend, and the common electrode is a plate electrode;
或者,每个像素单元中的公共电极和像素电极均为包括弯折的狭缝电极。 本实施例同时还提供一种包括上述阵列基板的显示装置。 所述显示装置 可以为: 液晶面板、 电子纸、 OLED面板、 手机、 平板电脑、 电视机、 显示 器、 笔记本电脑、 数码相框、 导航仪等任何具有显示功能的产品或部件。  Alternatively, the common electrode and the pixel electrode in each of the pixel units are slit electrodes including a bend. The embodiment also provides a display device including the above array substrate. The display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any display product or component.
实施例 2:  Example 2:
本实施例提供一种阵列基板, 包括村底基板, 形成在村底基板上的横纵 交错的多条栅线和数据线、 公共电极线、 栅极绝缘层、 钝化层以及均匀排列 的多个像素单元。 This embodiment provides an array substrate, including a village substrate, which is formed on a substrate substrate. A plurality of staggered gate lines and data lines, a common electrode line, a gate insulating layer, a passivation layer, and a plurality of pixel units uniformly arranged.
每个像素单元均包括薄膜晶体管, 和用于形成电场的像素电极与公共电 极; 其中, 每个像素单元中的公共电极为包括弯折的狭缝电极, 像素电极为 板状电极, 在所述公共电极(即狭缝电极) 的弯折处设置有一栅线, 以避免 所述弯折处形成的暗区漏光, 且所述公共电极的弯折处位于所述像素单元的 中部, 也即所述栅线位于所述像素单元的中部; 同一像素单元中的公共电极 的狭缝均平行设置;每个薄膜晶体管均包括栅极、半导体层(也称为有源层 )、 源极和漏极。  Each of the pixel units includes a thin film transistor, and a pixel electrode and a common electrode for forming an electric field; wherein, the common electrode in each pixel unit is a slit electrode including a bend, and the pixel electrode is a plate electrode, a grid line is disposed at a bend of the common electrode (ie, the slit electrode) to prevent light leakage in the dark region formed at the bend, and a bend of the common electrode is located in a middle portion of the pixel unit, that is, The gate lines are located in the middle of the pixel unit; the slits of the common electrodes in the same pixel unit are all arranged in parallel; each thin film transistor includes a gate, a semiconductor layer (also referred to as an active layer), a source and a drain .
位于同一数据线两侧且相邻的像素单元中的薄膜晶体管的源极均连接至 该同一数据线, 栅极分别连接至不同的两条栅线(如图 5所示的两个相邻像 素单元的栅极是连接到相邻的两条栅线上的, 这只是其中一种情况) , 漏极 均与对应的像素电极连接, 即本实施例所述阵列基板采用双栅驱动方式。 栅 线方向上相邻两个像素单元在村底基板上的位置均错开分布, 以使得所述栅 线均为直线, 且相邻两条栅线之间的距离等于所述像素单元在与栅线垂直的 方向上的长度的一半。 栅线方向上相邻两个像素单元中的公共电极的狭缝弯 折方向相反; 与栅线垂直的方向上相邻两个像素单元中的公共电极的狭缝弯 折方向相同。  The sources of the thin film transistors in the adjacent pixel units on both sides of the same data line are connected to the same data line, and the gates are respectively connected to different two gate lines (two adjacent pixels as shown in FIG. 5) The gate of the cell is connected to the adjacent two gate lines, which is only one of the cases. The drain is connected to the corresponding pixel electrode, that is, the array substrate in this embodiment adopts a double gate driving mode. The positions of two adjacent pixel units on the substrate substrate in the direction of the gate line are staggered so that the gate lines are all straight lines, and the distance between adjacent two gate lines is equal to the pixel unit in the gate Half the length of the line in the vertical direction. The slits of the common electrodes of the adjacent two pixel units in the direction of the gate line are bent in opposite directions; the slits of the common electrodes of the adjacent two pixel units in the direction perpendicular to the gate lines are bent in the same direction.
所述公共电极线与每个像素单元中的公共电极相连, 用于为公共电极提 供电压; 所述公共电极线与数据线在村底基板上交替布置且相互平行; 每个 像素单元中的像素电极与公共电极均位于一数据线以及与该数据线相邻的一 条公共电极线之间。 与每个像素单元中薄膜晶体管的源极相连的数据线, 以 及与每个像素单元中的公共电极相连的公共电极线, 均与该像素单元中相对 应部分的狭缝电极的狭缝平行。  The common electrode line is connected to a common electrode in each pixel unit for supplying a voltage to the common electrode; the common electrode line and the data line are alternately arranged on the village substrate and parallel to each other; pixels in each pixel unit The electrode and the common electrode are both located between a data line and a common electrode line adjacent to the data line. A data line connected to the source of the thin film transistor in each pixel unit, and a common electrode line connected to the common electrode in each pixel unit are parallel to the slit of the slit electrode of the corresponding portion in the pixel unit.
所述栅极绝缘层设置在各像素单元中薄膜晶体管的栅极与半导体层之 间, 所述钝化层设置在公共电极与像素电极之间, 均起到绝缘的作用。  The gate insulating layer is disposed between the gate of the thin film transistor and the semiconductor layer in each pixel unit, and the passivation layer is disposed between the common electrode and the pixel electrode to function as an insulating layer.
本实施例同时还提供一种包括上述阵列基板的显示装置。 所述显示装置 可以为: 液晶面板、 电子纸、 OLED面板、 手机、 平板电脑、 电视机、 显示 器、 笔记本电脑、 数码相框、 导航仪等任何具有显示功能的产品或部件。  The embodiment also provides a display device including the above array substrate. The display device may be: a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any display product or component.
下面结合附图 1-图 5详细描述本实施例所述阵列基板的制作方法。 虽然 本实施例所述阵列基板上形成有多个均勾排列的像素单元, 但为便于描述和 理解, 附图 1-图 5中只示出相邻两个像素单元结构的一种情况。 而且, 为方 便观察各层图形, 对附图中的像素电极 8和公共电极 9均进行了半透明化处 理。 The method for fabricating the array substrate of the present embodiment will be described in detail below with reference to FIGS. Although A plurality of pixel units arranged in a row are formed on the array substrate of the embodiment, but for convenience of description and understanding, only one case of the structure of two adjacent pixel units is shown in FIGS. Further, in order to facilitate observation of the respective layer patterns, the pixel electrode 8 and the common electrode 9 in the drawing are subjected to translucent processing.
该方法包括如下步骤:  The method comprises the following steps:
slOO.提供一村底基板。  slOO. Provides a village base substrate.
所述村底基板应经过洁净后无尘无杂质离子。 所述村底基板可采用玻璃 基板、 石英基板、 塑料基板等透明基板。  The substrate of the village should be cleaned and free of dust and impurity ions. The substrate substrate may be a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.
slOl. 如图 1所示, 通过构图工艺在村底基板(图中未示出)上形成栅 极 1、 和栅线 2的图形, 所述栅极 1与对应的栅线 2相连。  slOl. As shown in Fig. 1, a pattern of a gate electrode 1 and a gate line 2 are formed on a substrate (not shown) by a patterning process, and the gate electrode 1 is connected to a corresponding gate line 2.
sl02. 如图 2所示, 通过构图工艺在完成步骤 slOl的村底基板上依次形 成栅极绝缘层(图中未示出)和半导体层 3的图形, 所述栅极绝缘层完全覆 盖在完成步骤 slOl的村底基板上, 因此也覆盖在栅极 1和栅线 2上,所述半 导体层 3设置在对应的栅极 1的正上方。  Sl02. As shown in FIG. 2, a gate insulating layer (not shown) and a pattern of the semiconductor layer 3 are sequentially formed on the substrate substrate of the step s101 by a patterning process, and the gate insulating layer is completely covered. The substrate substrate of the step s101 is thus also covered on the gate 1 and the gate line 2, and the semiconductor layer 3 is disposed directly above the corresponding gate 1.
sl03. 如图 3所示, 通过构图工艺在完成步骤 sl02的村底基板上形成源 极 4、 漏极 5、数据线 6和公共电极线 7的图形, 所述源极 4和漏极 5分别与 半导体层 3相连, 且所述源极 4和漏极 5之间形成有沟道, 所述源极 4与对 应的数据线 6相连。  Sl03. As shown in FIG. 3, a pattern of the source electrode 4, the drain electrode 5, the data line 6, and the common electrode line 7 is formed on the substrate substrate of the step S102 by a patterning process, and the source electrode 4 and the drain electrode 5 are respectively Connected to the semiconductor layer 3, and a channel is formed between the source 4 and the drain 5, and the source 4 is connected to the corresponding data line 6.
其中, 步骤 sl02和步骤 sl03可利用普通掩模板技术并采用两次构图工 艺完成, 也可利用双色调掩膜板(如半色调掩模板 ( Half Tone Mask )或灰 色调掩模板 ( Gray Tone Mask ) )技术在一次构图工艺过程中完成。  Step s102 and step s03 can be performed by using a common mask technique and using two patterning processes, or a two-tone mask (such as a half Tone mask or a Gray Tone Mask). The technology is completed in a patterning process.
sl04. 如图 4所示, 通过构图工艺在完成步骤 sl03的村底基板上形成板 状像素电极 8的图形, 所述像素电极 8与对应的漏极 5相连。  Sl04. As shown in Fig. 4, a pattern of the plate-like pixel electrode 8 is formed on the substrate of the substrate at step sl03 by a patterning process, and the pixel electrode 8 is connected to the corresponding drain 5.
sl05. 如图 5所示, 通过构图工艺在完成步骤 sl04的村底基板上依次形 成钝化层(图中未示出)和公共电极 9 (即狭缝电极) 的图形, 所述钝化层 完全覆盖在完成步骤 sl04的村底基板上,且所述钝化层上形成有用于连接公 共电极 9与公共电极线 7的过孔。  Sl05. As shown in FIG. 5, a pattern of a passivation layer (not shown) and a common electrode 9 (ie, a slit electrode) are sequentially formed on the substrate of the substrate at step S104 by a patterning process, the passivation layer It is completely covered on the substrate substrate on which the step S104 is completed, and a via hole for connecting the common electrode 9 and the common electrode line 7 is formed on the passivation layer.
本实施例中的其他结构及作用都与实施例 1相同, 这里不再赘述。 以上 所述构图工艺, 通常包括光刻胶涂敷、 曝光、 显影、 刻蚀、 光刻胶剥离等工 艺。 以上所述仅是本发明的示范性实施方式, 而非用于限制本发明的保护范 本发明的保护范围由所附的权利要求确定。 Other structures and functions in this embodiment are the same as those in Embodiment 1, and are not described herein again. The patterning process described above generally includes a process of photoresist coating, exposure, development, etching, photoresist stripping, and the like. The above is only the exemplary embodiments of the present invention, and is not intended to limit the scope of the invention. The scope of the invention is determined by the appended claims.

Claims

权利要求书 Claim
1. 一种阵列基板, 包括村底基板, 所述村底基板上形成有沿相互交叉的 第一方向和第二方向的多条栅线和多条数据线、 以及沿所述第一方向和所述 第二方向均匀排列的多个像素单元, 每个像素单元均包括薄膜晶体管以及用 于形成电场的像素电极与公共电极, An array substrate comprising a substrate substrate, wherein the substrate substrate is formed with a plurality of gate lines and a plurality of data lines along a first direction and a second direction crossing each other, and along the first direction a plurality of pixel units uniformly arranged in the second direction, each of the pixel units including a thin film transistor and a pixel electrode and a common electrode for forming an electric field,
其中, 每个像素单元所述的公共电极与像素电极至少之一包括狭缝弯折 的狭缝电极, 且在所述狭缝电极的狭缝弯折处设置有相应的栅线, 位于数据 线两侧相邻的所述像素单元中的薄膜晶体管的源极均连接至同一数据线, 栅 极分别连接至不同的栅线。  Wherein at least one of the common electrode and the pixel electrode of each pixel unit comprises a slit electrode with a slit bent, and a corresponding gate line is disposed at a slit of the slit electrode of the slit electrode, and is located at the data line The sources of the thin film transistors in the adjacent pixel units on both sides are connected to the same data line, and the gates are respectively connected to different gate lines.
2. 根据权利要求 1所述的阵列基板, 其中,  2. The array substrate according to claim 1, wherein
每个像素单元中的所述狭缝电极的狭缝弯折处均位于所述像素单元的中 部。  The slit bend of the slit electrode in each pixel unit is located at the middle of the pixel unit.
3. 根据权利要求 2所述的阵列基板, 其中,  3. The array substrate according to claim 2, wherein
在平面图中看,每个像素单元的像素电极与公共电极与相应的栅线交叉, 并且该相应的栅线从该像素单元的中部穿过。  As seen in plan view, the pixel electrode and the common electrode of each pixel unit intersect with the corresponding gate line, and the corresponding gate line passes through the middle of the pixel unit.
4. 根据权利要求 1-3中任一项所述的阵列基板, 其中,  The array substrate according to any one of claims 1 to 3, wherein
所述狭缝电极包括多个狭缝, 所述多个狭缝与相应的栅线交叉, 且在该 栅线两侧具有不同的延伸方向从而在该栅线的位置形成弯折。  The slit electrode includes a plurality of slits that intersect the corresponding gate lines and have different extending directions on both sides of the gate lines to form a bend at the position of the gate lines.
5. 根据权利要求 1-4中任一项所述的阵列基板, 其中, 同一像素单元中 的所述狭缝电极的多个狭缝平行地设置。  The array substrate according to any one of claims 1 to 4, wherein a plurality of slits of the slit electrode in the same pixel unit are disposed in parallel.
6. 根据权利要求 2所述的阵列基板, 其中,  6. The array substrate according to claim 2, wherein
栅线方向上相邻两个像素单元在与栅线垂直的方向上错开所述像素单元 的长度的一半, 以使得相应的栅线经过所述相邻两个像素单元中一个像素单 元的边缘而穿过另一个像素单元的中部, 且相邻两条栅线之间的距离等于所 述像素单元在与栅线垂直的方向上的长度的一半。  Two adjacent pixel units in the gate line direction are shifted by half of the length of the pixel unit in a direction perpendicular to the gate line such that the corresponding gate line passes through an edge of one of the adjacent two pixel units Passing through the middle of another pixel unit, and the distance between adjacent two gate lines is equal to half the length of the pixel unit in a direction perpendicular to the gate line.
7. 根据权利要求 6所述的阵列基板, 其中,  7. The array substrate according to claim 6, wherein
所述栅线沿所述第一方向以直线形式延伸, 所述数据线沿所述第二方向 以折线形式延伸。  The gate line extends in a straight line along the first direction, and the data line extends in a fold line along the second direction.
8.根据权利要求 4所述的阵列基板, 其中, 所述狭缝电极在与其交叉的相应栅线两侧的狭缝的延伸方向相对于该栅 线对称。 The array substrate according to claim 4, wherein The slit electrode is symmetric with respect to the gate line in a direction in which the slits on both sides of the corresponding gate line intersecting therewith.
9. 根据权利要求 1-8中任一项所述的阵列基板, 其中,  The array substrate according to any one of claims 1 to 8, wherein
所述栅线方向上相邻两个像素单元中的狭缝电极的狭缝弯折方向相反; 与栅线垂直的方向上相邻两个像素单元中的狭缝电极的狭缝弯折方向相同。  The slits of the slit electrodes in the adjacent two pixel units in the gate line direction are bent in opposite directions; the slit electrodes in the adjacent two pixel units in the direction perpendicular to the gate lines are bent in the same direction .
10. 根据权利要求 1-9中任一项所述的阵列基板, 其中,  The array substrate according to any one of claims 1 to 9, wherein
所述阵列基板还包括形成在村底基板上的公共电极线, 每个像素单元中 的公共电极均与公共电极线相连;  The array substrate further includes a common electrode line formed on the substrate of the substrate, and the common electrode in each pixel unit is connected to the common electrode line;
所述公共电极线与数据线在村底基板上交替布置且相互平行;  The common electrode line and the data line are alternately arranged on the substrate of the village and are parallel to each other;
每个像素单元中的像素电极与公共电极均位于一数据线以及与该数据线 相邻的一条公共电极线之间。  The pixel electrode and the common electrode in each pixel unit are located between a data line and a common electrode line adjacent to the data line.
11. 根据权利要求 10所述的阵列基板, 其中,  11. The array substrate according to claim 10, wherein
与每个像素单元中薄膜晶体管的源极相连的数据线, 以及与每个像素单 元中的公共电极相连的公共电极线, 均与该像素单元中相对应部分的狭缝电 极的狭缝平行。  A data line connected to the source of the thin film transistor in each pixel unit, and a common electrode line connected to the common electrode in each pixel unit are parallel to the slit of the slit electrode of the corresponding portion of the pixel unit.
12. 根据权利要求 1-11中任一项所述的阵列基板, 其中,  The array substrate according to any one of claims 1 to 11, wherein
每个像素单元中薄膜晶体管的漏极均与该像素单元中的像素电极连接; 所述阵列基板还包括钝化层, 所述钝化层设置在公共电极与像素电极之 间。  The drain of the thin film transistor in each pixel unit is connected to the pixel electrode in the pixel unit; the array substrate further includes a passivation layer disposed between the common electrode and the pixel electrode.
13. 根据权利要求 1-12中任一项所述的阵列基板, 其中,  The array substrate according to any one of claims 1 to 12, wherein
每个像素单元中的公共电极为包括弯折的狭缝电极, 像素电极为板状电 极;  The common electrode in each pixel unit is a slit electrode including a bend, and the pixel electrode is a plate electrode;
或者, 每个像素单元中的像素电极为包括弯折的狭缝电极, 公共电极为 板状电极;  Or the pixel electrode in each pixel unit is a slit electrode including a bend, and the common electrode is a plate electrode;
或者,每个像素单元中的公共电极和像素电极均为包括弯折的狭缝电极。 Alternatively, the common electrode and the pixel electrode in each of the pixel units are slit electrodes including a bend.
14.一种显示装置, 包括如权利要求 1-13任一项所述的阵列基板。 A display device comprising the array substrate according to any one of claims 1-13.
PCT/CN2013/076956 2013-03-29 2013-06-07 Array substrate and display device WO2014153844A1 (en)

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