WO2014104491A1 - Photosensitive resin composition for insulation film for display device, and insulation film and display device using same - Google Patents

Photosensitive resin composition for insulation film for display device, and insulation film and display device using same Download PDF

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Publication number
WO2014104491A1
WO2014104491A1 PCT/KR2013/003829 KR2013003829W WO2014104491A1 WO 2014104491 A1 WO2014104491 A1 WO 2014104491A1 KR 2013003829 W KR2013003829 W KR 2013003829W WO 2014104491 A1 WO2014104491 A1 WO 2014104491A1
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group
substituted
unsubstituted
resin composition
photosensitive resin
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PCT/KR2013/003829
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French (fr)
Korean (ko)
Inventor
윤은경
강진희
권지윤
김대윤
김상권
김상균
김상수
노건배
박은비
송재환
이종화
이진영
홍충범
황은하
황인철
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제일모직 주식회사
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Publication of WO2014104491A1 publication Critical patent/WO2014104491A1/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/016Diazonium salts or compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0755Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Definitions

  • the present invention relates to a photosensitive resin composition for a display device insulating film, a display device insulating film and a display device using the same.
  • polyimide resins having excellent heat resistance, electrical properties, mechanical properties, and the like have been used for surface protection films and interlayer insulating films of semiconductor devices.
  • Such polyimide resins have recently been used in the form of photosensitive polyimide precursor compositions, and are easy to apply. After applying the polyimide precursor composition onto a semiconductor device, patterning by ultraviolet rays, development, thermal imidization treatment, and the like are performed. Thus, the surface protective film, the interlayer insulating film and the like can be easily formed. Therefore, compared with the conventional non-photosensitive polyimide precursor composition, it has the characteristic that the process shortening is large.
  • the photosensitive polyimide precursor composition has a positive type in which the exposed part is dissolved by development and a negative type in which the exposed part is cured.
  • a non-toxic aqueous alkali solution can be used as a developer.
  • the positive photosensitive polyimide precursor composition includes polyamic acid as a polyimide precursor, diazonaphthoquinone as a photosensitive material, and the like.
  • the positive photosensitive polyimide precursor composition has a problem in that the carboxylic acid of the polyamic acid used is too soluble in alkali to obtain a desired pattern.
  • the positive photosensitive resin composition containing the said polybenzoxazole precursor can be applied as an organic insulating film or a partition material.
  • Liquid crystal display devices which are one of display devices, have advantages such as light weight, thinness, low cost, low power consumption, and excellent bonding with integrated circuits, and thus their use range is expanding for notebook computers, monitors, and TV images.
  • the liquid crystal display device includes a lower substrate on which a black matrix, a color filter, and an ITO pixel electrode are formed, an active circuit unit consisting of a liquid crystal layer, a thin film transistor, and a capacitor layer, and an upper substrate on which an ITO pixel electrode is formed.
  • the color filter includes a black matrix layer formed in a predetermined pattern on a transparent substrate for shielding boundaries between pixels, and a plurality of colors (typically red (R), green (G), and blue (B) to form each pixel.
  • the three primary colors) are arranged in a stacked order.
  • each organic EL element may be arranged as a matrix pixel, and these pixels may have the same color. It may be manufactured to emit a monochromatic display device or arranged in three primary colors of red (R), green (G), and blue (B) to emit various colors.
  • One embodiment of the present invention is to provide a display positive type photosensitive resin composition having excellent residual film ratio, sensitivity, and dielectric constant, and low residue generation rate of an exposed part.
  • Another embodiment of the present invention is to provide an insulating film using the positive photosensitive resin composition.
  • Another embodiment of the present invention is to provide a display device including the insulating layer.
  • One embodiment of the present invention is a positive composition
  • a positive composition comprising (A) an alkali soluble resin, (B) a photosensitive diazoquinone compound, (C) siloxane-containing particles having a specific surface area of 100 to 400 m 2 / g, and (D) a solvent It provides a type photosensitive resin composition.
  • the siloxane-containing particles (C) may have a specific surface area of 100 to 300 m 2 / g.
  • the alkali-soluble resin (A) may be a polybenzoxazole precursor, polyamic acid, polyimide, or a combination thereof.
  • the siloxane-containing particles may be represented by the following formula (1).
  • R is a hydrogen atom, a hydroxyl group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 To C30 cycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C3 to C30 cycloalkynyl group, substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, R 1 Silver substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to
  • the positive photosensitive resin composition may contain 5 to 100 parts by weight of the (B) photosensitive diazoquinone compound, 1 to 10 parts by weight of the (C) siloxane-containing particles, and 100 parts by weight of the (A) alkali-soluble resin. (D) 100 to 400 parts by weight of the solvent may be included.
  • the positive photosensitive resin composition may further include a phenol compound.
  • an insulating film manufactured by using the positive photosensitive resin composition is provided.
  • a display device including the insulating film is provided.
  • the photosensitive resin composition for an insulating film, the insulating film using the same, and a display device including the same according to an embodiment of the present invention have excellent residual film rate, sensitivity, and dielectric constant, and low residue generation rate of the exposed part.
  • FIG. 1 is a schematic view (section) showing a display device according to an embodiment.
  • FIG. 2 is a schematic view showing an insulating film pattern after exposure / development of the photosensitive resin composition according to one embodiment.
  • substituted to “substituted” means that at least one hydrogen atom of the functional group of the present invention is a halogen atom (-F, -Cl, -Br or -I), hydroxy group, nitro group, cya No group, amino group (NH 2 , NH (R 200 ) or N (R 201 ) (R 202 ), wherein R 200 , R 201 and R 202 are the same or different from each other, and are each independently C1 to C10 alkyl group, Amidino group, hydrazine group, hydrazone group, carboxyl group, substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl group, substituted or unsubstituted alkynyl group, substituted or unsubstituted alicyclic organic group, substituted or unsubstituted It means substituted with one or more substituents selected from the group consisting
  • alkyl group means a C1 to C30 alkyl group, specifically means a C1 to C15 alkyl group
  • cycloalkyl group means a C3 to C30 cycloalkyl group, specifically C3 To C18 cycloalkyl group
  • alkoxy group means C1 to C30 alkoxy group, specifically C1 to C18 alkoxy group
  • aryl group means C6 to C30 aryl group, specifically C6 to C18 to aryl group
  • alkenyl group means C2 to C30 alkenyl group, specifically C2 to C18 alkenyl group
  • alkylene group means C1 to C30 alkylene group, specifically C1 To C18 alkylene group
  • an "arylene group” means a C6 to C30 arylene group, specifically, a C6 to C16 arylene group.
  • an "aliphatic organic group” means a C1 to C30 alkyl group, a C2 to C30 alkenyl group, a C2 to C30 alkynyl group, a C1 to C30 alkylene group, a C2 to C30 alkenylene group, or a C2 to C30 group.
  • An alkynylene group and specifically, a C1 to C15 alkyl group, a C2 to C15 alkenyl group, a C2 to C15 alkynyl group, a C1 to C15 alkylene group, a C2 to C15 alkenylene group, or a C2 to C15 alkynylene group, and Alicyclic organic group "means a C3 to C30 cycloalkyl group, a C3 to C30 cycloalkenyl group, a C3 to C30 cycloalkynyl group, a C3 to C30 cycloalkylene group, a C3 to C30 cycloalkenylene group, or a C3 to C30 cycloalkynylene group Specifically, C3 to C15 cycloalkyl group, C3 to C15 cycloalkenyl group, C3 to C15 cycloalkynyl group, C3 to C15 cycloalkylene group, C3
  • Positive type photosensitive resin composition is (A) alkali-soluble resin, (B) photosensitive diazoquinone compound, (C) siloxane-containing particles having a specific surface area of 100 to 400 m 2 / g, and ( D) a solvent.
  • the alkali-soluble resin (A) can be used without limitation so long as it is an alkali-soluble resin generally used in the art.
  • the alkali-soluble resin includes a polybenzoxazole precursor including a repeating unit represented by the following Formula 2, a polyamic acid including the repeating unit represented by the following Formula 3, and a repeating unit represented by the following Formula 4.
  • At least one selected from polyimides can be used.
  • X 1 is a substituted or unsubstituted C6 to C30 aromatic organic group
  • Y1 is a substituted or unsubstituted C6 to C30 aromatic organic group, a substituted or unsubstituted divalent to hexavalent C1 to C30 aliphatic oil Or a substituted or unsubstituted divalent to hexavalent C3 to C30 alicyclic organic group.
  • X 1 may be a residue derived from an aromatic diamine as an aromatic organic group.
  • aromatic diamine examples include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis (3-amino- 4-hydroxyphenyl) propane, bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4-amino-3-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-5-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-6-trifluoromethylphenyl) hexafluoropropane,
  • Y 1 is an aromatic organic group, a divalent to hexavalent aliphatic organic group, or a divalent to hexavalent alicyclic organic group, and may be a residue of a dicarboxylic acid or a residue of a dicarboxylic acid derivative. Specifically, Y 1 may be an aromatic organic group or a divalent to hexavalent alicyclic organic group.
  • Examples of the dicarboxylic acid may include Y 1 (COOH) 2 , wherein Y 1 is the same as Y 1 of Chemical Formula 1.
  • Examples of the di-carboxylic acid derivatives is Y 1 (COOH) 2 of the carbonyl halide derivative, or Y 1 (COOH) 2 and 1-hydroxy-1,2,3-benzotriazole-active ester derivative by reacting a sol such as the active compounds may be mentioned (wherein Y 1 is the same hereinafter as Y 1 in the formula (1)).
  • dicarboxylic acid derivatives include 4,4'-oxydibenzoyl chloride, diphenyloxydicarbonyldichloride, bis (phenylcarbonyl chloride) sulfone, bis (phenylcarbonyl chloride) ether, bis (phenylcarbonyl chloride).
  • the polybenzoxazole precursor may have a thermopolymerizable functional group derived from a reactive endblocking monomer at either or both of the branched chain ends.
  • the reactive end-blocking monomer is preferably monoamines or monoanhydrides having a carbon-carbon double bond, or a combination thereof.
  • the monoamines may include, but are not limited to, toluidine, dimethylaniline, ethylaniline, aminophenol, aminobenzyl alcohol, aminoindan, aminoacetonephenone, or a combination thereof.
  • X 2 and X 3 are each independently a substituted or unsubstituted C6 to C30 aromatic organic group, a substituted or unsubstituted divalent to 6-valent C1 to C30 aliphatic organic group, a substituted or unsubstituted Or a divalent to hexavalent C3 to C30 alicyclic organic group or an organic silane group.
  • X 2 and X 3 may each independently be a residue derived from an aromatic diamine, an alicyclic diamine, or a silicone diamine.
  • the aromatic diamine, alicyclic diamine and silicone diamine may be used alone or in combination of one or more thereof.
  • aromatic diamine examples include 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfide, benzidine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine , Bis [4- (4-aminophenoxy) phenyl] sulfone, bis (3-aminophenoxyphenyl) sulfone, bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl ] Ether, 1, 4-bis (4-aminophenoxy) benzene, the compound which substituted the alkyl group
  • alicyclic diamine examples include, but are not limited to, 1,2-cyclohexyl diamine, 1,3-cyclohexyl diamine, or a combination thereof.
  • silicone diamine examples include bis (4-aminophenyl) dimethylsilane, bis (4-aminophenyl) tetramethylsiloxane, bis (p-aminophenyl) tetramethyldisiloxane, bis ( ⁇ -aminopropyl) tetramethyldisiloxane , 1,4-bis ( ⁇ -aminopropyldimethylsilyl) benzene, bis (4-aminobutyl) tetramethyldisiloxane, bis ( ⁇ -aminopropyl) tetraphenyldisiloxane, 1,3-bis (aminopropyl) tetra Methyldisiloxane, or a combination thereof, but is not limited thereto.
  • Y 2 and Y 3 are each independently substituted or unsubstituted C6 to C30 aromatic organic group, substituted or unsubstituted tetravalent to hexavalent C1 to C30 aliphatic organic group, or substituted or unsubstituted Tetravalent C6 to C30 alicyclic organic group.
  • Y 2 and Y 3 may each independently be a residue derived from an aromatic acid dianhydride or an alicyclic acid dianhydride.
  • the aromatic acid dianhydride and the alicyclic acid dianhydride may be used alone or in combination of one or more thereof.
  • aromatic acid dianhydride examples include pyromellitic dianhydride; Benzophenone tetracarboxylic dianhydride such as benzophenone-3,3 ', 4,4'-tetracarboxylic dianhydride ; Oxydiphthalic dianhydride such as 4,4'-oxydiphthalic dianhydride; Biphthalic dianhydrides such as 3,3 ', 4,4'-biphthalic dianhydride (3,3', 4,4'-biphthalic dianhydride); (Hexafluoroisopropyledene) diphthalic dianhydride, such as 4,4 '-(hexafluoroisopropylidene) diphthalic dianhydride (4,4'-(hexafluoroisopropyledene) diphthalic dianhydride) ; Naphthalene-1,4,5,8-tetracarboxylic dianhydride; 3,4,9,10-perylenetetracarboxylic dian
  • Examples of the alicyclic acid dianhydride include 1,2,3,4-cyclobutanetetracarboxylic dianhydride (1,2,3,4-cyclobutanetetracarboxylic dianhydride), 1,2,3,4-cyclopentanetetracarboxyl Acid dianhydrides (1,2,3,4-cyclopentanetetracarboxylic dianhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-cyclohexane-1,2-dicarboxylic dianhydride (5- (2,5-dioxotetrahydrofuryl) -3-methyl-cyclohexane-1,2-dicarboxylic anhydride), 4- (2,5-dioxotetrahydrofuran-3-yl) -tetraline-1,2-dicar Acid dianhydride (4- (2,5-dioxotetrahydrofuran-3-yl) -tetralin-1,2-dicarbox
  • the alkali-soluble resin may have a weight average molecular weight (Mw) of 3,000 to 300,000 g / mol, specifically, may have a weight average molecular weight (Mw) of 5,000 to 30,000 g / mol.
  • Mw weight average molecular weight
  • photosensitive diazoquinone compound a compound having a 1,2-benzoquinonediazide structure or a 1,2-naphthoquinonediazide structure may be used.
  • photosensitive diazoquinone compound at least one selected from compounds represented by the following Chemical Formula 5 and Chemical Formulas 7 to 9 may be used, but is not limited thereto.
  • R 60 to R 62 in Formula 5 may each independently be a hydrogen atom or a substituted or unsubstituted C1 to C30 alkyl group, and specifically, may be a methyl group.
  • R 63 to R 65 may be each independently OQ, and Q may be a hydrogen atom, a functional group represented by Formula 6a, or a functional group represented by Formula 6b, wherein Q may be hydrogen at the same time. There is no.
  • n20 'to n22 may each be an integer of 0 to 5.
  • R 66 may be a hydrogen atom, or a substituted or unsubstituted C1 to C30 alkyl group
  • R 67 to R 69 may be each independently OQ
  • Q is the same as defined in Formula 5 above
  • n23 to n25 may be integers of 0 to 5, respectively.
  • a 3 may be CO or CR 74 R 75 , and R 74 and R 75 may be each independently a substituted or unsubstituted C1 to C30 alkyl group.
  • R 70 to R 73 in Formula 8 may each independently represent a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, OQ or NHQ, wherein Q is the same as defined in Formula 5 above.
  • n26 'to n29 may each be an integer of 0 to 4, and n26 + n27' and n28 + n29 may each be an integer of 5 or less.
  • R 70 and R 71 may be OQ
  • one aromatic ring may include 1 to 3 OQ
  • the other aromatic ring may include 1 to 4 OQ.
  • R 74 to R 81 may each independently be a hydrogen atom or a substituted or unsubstituted C1 to C30 alkyl group, n30 and n31 may each be an integer of 1 to 5, and Q is the same as defined in Chemical Formula 5 above .
  • the photosensitive diazoquinone compound may be included in the positive photosensitive resin composition in an amount of 5 to 100 parts by weight, specifically 10 to 50 parts by weight, based on 100 parts by weight of the alkali-soluble resin.
  • the pattern is well formed without the residue by exposure, there is no loss of film thickness during development, it is possible to obtain a good pattern.
  • the siloxane-containing particles may be produced by surface modification of the siloxane-containing compound by spray drying.
  • the siloxane-containing particles thus formed may be less than nanometers in size, are crystalline or amorphous, and because of their higher purity than normal silica, are transparent and have low refractive index and low light propagation loss.
  • the specific surface area of the siloxane-containing particles may be 100 to 400 m 2 / g, specifically 100 to 300 m 2 / g.
  • the positive type photosensitive partition pixel layer may maintain the high sensitivity, and the functions of heat resistance and insulation may be enhanced.
  • the siloxane-containing particles may be specifically represented by the following formula (1).
  • R is a hydrogen atom, a hydroxyl group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 To C30 cycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C3 to C30 cycloalkynyl group, substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and R1 is Substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C
  • the siloxane-containing particles may be included in 1 to 10 parts by weight, specifically 1 to 7 parts by weight based on 100 parts by weight of alkali-soluble resin. When included in the above range, it is possible to uniformly apply to the substrate by preventing the aggregation of the silica particles, it is possible to obtain a photosensitive pixel partition layer composition having high heat resistance and insulation without light loss.
  • the photosensitive resin composition for the display device insulating film may include a solvent capable of easily dissolving each component.
  • the solvent examples include -methyl-2-pyrrolidone, ⁇ -butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol di Butyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol 3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxy propionate, etc. are mentioned. These solvents can be used alone or in combination of two or more thereof.
  • the solvent may be included in the positive photosensitive resin composition at 100 to 400 parts by weight based on 100 parts by weight of the alkali-soluble resin. When included in the above range can be a film of a sufficient thickness, it may have excellent solubility and coating properties.
  • the solvent may be used so that the solid content of the positive photosensitive resin composition is 3 to 50% by weight, specifically 5 to 30% by weight.
  • the photosensitive resin composition for the display device insulating layer may further include a phenol compound.
  • the phenolic compound may increase the dissolution rate and sensitivity of the exposed portion during development with an aqueous alkali solution to form a pattern with the photosensitive resin composition, and may serve as a high resolution pattern without developing residues during development.
  • phenolic compound examples include compounds represented by the following Chemical Formulas 10 to 16, but are not limited thereto.
  • R 82 to R 87 are each independently hydrogen, a hydroxy group (OH), a substituted or unsubstituted alkyl group of C1 to C8, alkoxyalkyl of C1 to C8 or -OCO-R 88 , and R 88 is a substitution of C1 to C8 or An unsubstituted alkyl group, at least one of R 82 to R 87 is a hydroxy group, and not all are hydroxy groups.
  • R 99 to R 101 are each independently hydrogen or a substituted or unsubstituted alkyl group of C1 to C8, and R 102 to R 106 are each independently H, OH, or a substituted or unsubstituted alkyl group of C1 to C8, Specifically, the alkyl group may be CH 3 , and n68 is an integer of 1 to 5.
  • R 107 to R 112 are each independently H, OH, or a substituted or unsubstituted alkyl group of C1 to C8,
  • a 3 is CR 205 R 206 or a single bond, and R 205 and R 206 are each independently hydrogen, Or a substituted or unsubstituted alkyl group of C1 to C8, specifically, the alkyl group may be CH 3 , and n69 + n70 + n71 and n72 + n73 + n74 are each independently an integer of 5 or less.
  • R 113 to R 115 are each independently hydrogen or a substituted or unsubstituted alkyl group of C1 to C8, n75, n76 and n79 are each independently an integer of 1 to 5, n77 and n78 are each independently 0 to 4 Is an integer.
  • R 116 to R 121 are each independently hydrogen, OH, or a substituted or unsubstituted alkyl group of C1 to C8, and n80 to n83 are each independently an integer of 1 to 4; However, n80 + n82 and n81 + n83 are each independently an integer of 5 or less.
  • R 122 is a C1 to C8 substituted or unsubstituted alkyl group, specifically, CH 3 , and R 123 to R 125 are each independently hydrogen or a C1 to C8 substituted or unsubstituted alkyl group, n84, n86 and n88 are each independently an integer of 1 to 5, and n85, n87 and n89 are each independently an integer of 0 to 4; Provided that n84 + n85, n86 + n87 and n88 + n89 are each independently an integer of 5 or less.
  • R 126 to R 128 are each independently a substituted or unsubstituted alkyl group of C1 to C8, specifically, may be CH 3 , and R 129 to R 132 are each independently hydrogen or a substituted or unsubstituted of C1 to C8 N90, n92 and n94 are each independently an integer of 1 to 5, n91, n93 and n95 are each independently an integer of 0 to 4, and n96 is an integer of 1 to 4; However, n90 + n91, n92 + n93, and n94 + n95 are each independently an integer of 5 or less.
  • phenol compound examples include 2,6-dimethoxymethyl-4-t-butylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diacetoxymethyl-p-cresol, and the like.
  • present invention is not limited thereto.
  • the amount of the phenol compound used may be 1 to 40 parts by weight based on 100 parts by weight of the alkali-soluble resin.
  • the content of the phenolic compound is in the above range, it does not cause a decrease in sensitivity during development, and can appropriately increase the dissolution rate of the non-exposed part to obtain a good pattern, and also exhibit excellent storage stability because precipitation does not occur during freezing storage. have.
  • the photosensitive resin composition for a display device insulating film according to an embodiment may further include other additives.
  • the photosensitive resin composition for a display device insulating film may be selected from the group consisting of malonic acid in order to prevent stains and spots during coating, leveling characteristics, or generation of residues due to undevelopment; 3-amino-1,2-propanediol; Silane coupling agents having a vinyl group or a (meth) acryloxy group; And additives such as these. The amount of these additives to be used can be easily adjusted according to the desired physical properties.
  • the silane coupling agent may improve the adhesion between the photosensitive resin composition for a display device insulating film and the substrate.
  • silane coupling agent examples include compounds represented by the following Chemical Formulas 17 to 19; Vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrichlorosilane, vinyltris ( ⁇ -methoxyethoxy) silane; Or 2- (3,4 epoxycyclohexyl) -ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryltrimethoxysilane, 3 -Methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane; Carbon-carbon unsaturated bond containing silane compounds, such as trimethoxy [3- (phenylamino) propyl] silane, are mentioned, but it is not limited to these.
  • R 20 is a vinyl group, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group, specifically 3- (meth) acryloxypropyl, p-styryl or 3- (phenylamino Profile).
  • R 21 to R 23 are each independently a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkyl group, or a halogen, wherein at least one of R 21 to R 23 is an alkoxy group or a halogen, specifically As the alkoxy group may be a C1 to C8 alkoxy group, the alkyl group may be a C1 to C20 alkyl group.
  • R 24 is -NH 2 or -CH 3 CONH
  • R 25 to R 27 are each independently a substituted or unsubstituted C1 to C20 alkoxy group, specifically the alkoxy group is OCH 3 or OCH 2 CH 3 and n34 may be an integer from 1 to 5.
  • R 28 to R 31 are each independently a substituted or unsubstituted C1 to C20 alkyl group, or a substituted or unsubstituted C1 to C20 alkoxy group, and specifically, may be CH 3 or OCH 3 .
  • R 32 and R 33 may each independently be a substituted or unsubstituted amino group, and specifically NH 2 or CH 3 CONH.
  • n35 and n36 may be an integer of 1 to 5, respectively.
  • the silane coupling agent may be used in an amount of 0.1 to 30 parts by weight based on 100 parts by weight of the alkali-soluble resin, and specifically 1 to 7 parts by weight.
  • the adhesion to the upper and lower membrane layers is excellent, and no residual film is left after development, and optical properties such as transmittance, as well as mechanical properties of the membrane such as tensile strength and elongation can be improved.
  • the photosensitive resin composition for a display device insulating film may further include an epoxy compound as an additive to improve adhesion and the like.
  • an epoxy compound an epoxy novolac acrylic carboxylate resin, an ortho cresol novolac epoxy resin, a phenol novolac epoxy resin, a tetramethyl biphenyl epoxy resin, a bisphenol A type epoxy resin, an alicyclic epoxy resin or a combination thereof may be used. Can be.
  • a radical polymerization initiator such as a peroxide initiator or an azobis-based initiator may be further included.
  • the epoxy compound may be used in an amount of 0.01 to 5 parts by weight based on 100 parts by weight of the photosensitive resin composition for the display device insulating film.
  • the epoxy compound is included in the above range it is possible to improve the adhesion and other properties in storage and economical.
  • the method of manufacturing the photosensitive resin composition for the display device insulating film is not particularly limited, but specifically, the above-described dye, acrylic binder resin, photopolymerization initiator, photopolymerizable monomer, solvent, and additives may be optionally mixed to mix the photosensitive resin for display device insulating film.
  • the composition can be prepared.
  • heat latent acid generators examples include arylsulfonic acids such as p-toluenesulfonic acid and benzenesulfonic acid; Perfluoroalkylsulfonic acids such as trifluoromethanesulfonic acid, trifluorobutanesulfonic acid and the like; Alkyl sulfonic acids such as methanesulfonic acid, ethanesulfonic acid, butanesulfonic acid and the like; Or combinations thereof, but is not limited thereto.
  • arylsulfonic acids such as p-toluenesulfonic acid and benzenesulfonic acid
  • Perfluoroalkylsulfonic acids such as trifluoromethanesulfonic acid, trifluorobutanesulfonic acid and the like
  • Alkyl sulfonic acids such as methanesulfonic acid, ethanesulfonic acid, butanesulfonic acid and the like
  • the heat latent acid generator can smoothly proceed the cyclization reaction even if the curing temperature is lowered as a catalyst for the dehydration reaction of the phenolic hydroxyl group-containing polyamide of the polybenzoxazole precursor and the cyclization reaction.
  • surfactants or leveling agents may be further used as additives in order to prevent staining of the film thickness or to improve developability.
  • a display device insulating film manufactured using the photosensitive resin composition for the display device insulating film is provided.
  • the display device insulating film may be manufactured by the following method. After applying the prepared photosensitive resin composition to the surface of the substrate by a spray method, a roll coater method, a rotary coating method, etc., the solvent is removed by pre-baking to form a coating film. It is preferable to perform the said prebaking for 1 to 5 minutes at 70-150 degreeC. Thereafter, visible light, ultraviolet rays, far ultraviolet rays, electron beams, far-ultraviolet rays, electron beams, X-rays, and the like are irradiated to the formed coating film according to a pattern prepared in advance, and developed with a developer to remove an unnecessary portion to form a predetermined pattern.
  • an aqueous alkali solution may be used as the developing solution, specifically, inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate; Primary amines such as ethylamine and n-propylamine; Secondary amines such as diethylamine and n-propylamine; Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; Alcohol amines such as dimethylethanolamine, methyl diethanolamine and triethanolamine; Aqueous solutions of quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; And mixtures thereof.
  • inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate
  • Primary amines such as ethylamine and n-propylamine
  • Secondary amines such as diethylamine and n-propylamine
  • concentration of the alkaline compound of the said developing solution is 0.1 to 10%.
  • an appropriate amount of a water-soluble organic solvent or a surfactant such as methanol ethanol may be added together with the solvent.
  • the pattern is The final pattern may be obtained by heating at 110 to 300 ° C. for 30 to 120 minutes by a heating apparatus.
  • a display device including the insulating layer is provided.
  • the display device may be a liquid crystal display, a light emitting diode, a plasma display, or an organic light emitting diode.
  • Polybenzoxazole precursor (PBO-2) was prepared in the same manner as in Synthesis Example 1, except that maleic hydride was used instead of 5-norbornene-2,3-dicarboxylic hydride.
  • a photosensitive diazoquinone represented by the following Formula 20 was used.
  • a siloxane-containing particle (R805, Aerosil) having a specific surface area of (C-1) 150 ⁇ 25 m 2 / g was used.
  • C-2 A siloxane-containing particle (R812, Aerosil) having a specific surface area of 260 ⁇ 30 m 2 / g was used.
  • C-3 A siloxane-containing particle (R816, Aerosil) having a specific surface area of 190 ⁇ 20m 2 / g was used.
  • C-4 A siloxane-containing particle (R200, Aerosil) having a specific surface area of 200 ⁇ 15 m 2 / g was used.
  • C-5 A siloxane-containing particle (OX50, Aerosil) having a specific surface area of 50 ⁇ 15 m 2 / g was used.
  • the phenolic compound represented by following formula (22) was used.
  • each component was mixed with the composition of Table 1 below to prepare a positive photosensitive resin composition.
  • the alkali-soluble resin (A) was dissolved in the solvent (D) and then dissolved by adding a photosensitive diazoquinone compound (B) and a phenol compound (E). Thereafter, the siloxane-containing particles were added to the mixture, stirred for 1 hour at room temperature, stabilized, and filtered through a 0.45 ⁇ m fluororesin filter to prepare a positive photosensitive resin composition.
  • the positive photosensitive resin compositions prepared in Examples 1 to 5 and Comparative Examples 1 and 2 were applied to ITO glass using a spin coater, and then heated to 120 ° C. on a hot plate for 100 seconds to form a photosensitive polyimide precursor coating film. It was. After exposure using an exposure apparatus (I-line stepper, Nikon Co., NSR i10C) using a pattern mask engraved with a pattern of various sizes on the polyimide precursor coating film, 23% in an aqueous solution of tetramethylammonium hydroxide at room temperature of 2.38% Washed for 60 seconds. Subsequently, the obtained pattern was cured at 250 ° C. for 40 minutes at an oxygen concentration of 1000 ppm or less using an electric furnace to obtain a pattern film.
  • an exposure apparatus I-line stepper, Nikon Co., NSR i10C
  • the prefired film was developed in a 2.38% tetramethylammonium hydroxide (TMAH) aqueous solution for 23 ° C./60 seconds, washed with ultrapure water for 60 seconds, dried, and measured for change in film thickness using Alpha Step (Tencor). And it calculated by the following formula 1.
  • TMAH tetramethylammonium hydroxide
  • Residual film ratio (film thickness after development / initial film thickness before development) ⁇ 100
  • the residue level of the pattern formed using the photosensitive resin composition prepared above was confirmed by an optical microscope and CD-SEM.
  • the photosensitive resin film-coated wafer formed by using the prepared photosensitive resin composition was immersed in a 2% hydrofluoric acid (HF) aqueous solution to separate the resin film without damage.
  • HF hydrofluoric acid
  • the glass transition temperature was measured by TMA (thermo-mechanical analyzer) analysis of each of the separated resin films.
  • the photosensitive resin film-coated wafer formed by using the prepared photosensitive resin composition was immersed in a 2% hydrofluoric acid (HF) aqueous solution to separate the resin film without damage.
  • the 5% weight loss temperature was measured by TGA (thermogravimetric analyzer) analysis of each resin film separated.
  • the positive photosensitive resin composition prepared above was applied to a chromium substrate and subjected to 120 ° C./100 seconds treatment on a hot plate to form a coating film having a final thickness of 3.0 ⁇ m.
  • the formed coating film was cured in an electric furnace at a temperature of 250 ° C. for 40 minutes, and then the dielectric constant was confirmed through a DEA (dielectric analyzer) device.
  • DEA dielectric analyzer
  • the positive photosensitive resin composition prepared above was applied to ITO glass using a spin coater, and then treated on a hot plate at 120 ° C./100 seconds to confirm uniformity and defects of the coated film with an optical microscope and SP1 equipment.
  • the positive photosensitive resin composition prepared above was coated on a quartz substrate using a fin spin coater, and then coated on a hot plate at 120 ° C./100 seconds for curing for 40 minutes in an electric furnace at a temperature of 250 ° C., followed by a haze meter (NDH-2000). , DENSHOKU) equipment to check the transparency.
  • the positive photosensitive resin composition of the present invention can realize the sensitivity (EOP) at the time when the residual film does not remain by appropriately adjusting the developing speed of the exposed portion, and the overall difference in the film thickness of the exposed portion It was confirmed that no residue occurred in the area.
  • Comparative Example 1 As shown in Table 2, in Comparative Example 1, the glass transition temperature and the 5% weight loss temperature are relatively low, whereas the heat resistance is low, whereas in Examples 1 to 5, the residual film rate and sensitivity, dielectric constant, and heat resistance of the non-exposed part are low. The remaining film of the exposed portion was cleanly removed while maintaining the excellent level.
  • the comparative example 2 is somewhat superior in terms of heat resistance and dielectric constant, due to the small specific surface area of the siloxane-containing particles, the coating property and transparency are deteriorated and the sensitivity is adversely affected, resulting in a problem of scum after development.

Abstract

The present invention relates to a positive type photosensitive resin composition comprising (A) an alkali-soluble resin, (B) a photosensitive diazoquinone compound, (C) particles containing siloxane having a specific surface area of 100 to 400 m2/g, and (D) a solvent. The present invention also relates to an insulation film and to a display device using said composition.

Description

표시장치 절연막용 감광성 수지 조성물, 및 이를 이용한 표시장치 절연막 및 표시장치Photosensitive resin composition for display device insulating film, and display device insulating film and display device using same
본 기재는 표시장치 절연막용 감광성 수지 조성물, 이를 이용한 표시장치 절연막 및 표시장치에 관한 것이다.The present invention relates to a photosensitive resin composition for a display device insulating film, a display device insulating film and a display device using the same.
종래부터 반도체 장치의 표면 보호막 및 층간 절연막에는 우수한 내열성과 전기 특성, 기계 특성 등을 갖는 폴리이미드 수지가 사용되고 있다.  이러한 폴리이미드 수지는 최근 감광성 폴리이미드 전구체 조성물의 형태로 사용하여, 도포가 용이하며, 상기 폴리이미드 전구체 조성물을 반도체 장치 상에 도포한 후, 자외선에 의한 패터닝, 현상, 열 이미드화 처리 등을 실시하여 표면 보호막, 층간 절연막 등을 쉽게 형성시킬 수 있다.  따라서, 종래 비감광성 폴리이미드 전구체 조성물에 비하여 대폭적인 공정 단축이 가능해진다는 특징을 갖고 있다.  Conventionally, polyimide resins having excellent heat resistance, electrical properties, mechanical properties, and the like have been used for surface protection films and interlayer insulating films of semiconductor devices. Such polyimide resins have recently been used in the form of photosensitive polyimide precursor compositions, and are easy to apply. After applying the polyimide precursor composition onto a semiconductor device, patterning by ultraviolet rays, development, thermal imidization treatment, and the like are performed. Thus, the surface protective film, the interlayer insulating film and the like can be easily formed. Therefore, compared with the conventional non-photosensitive polyimide precursor composition, it has the characteristic that the process shortening is large.
감광성 폴리이미드 전구체 조성물은 노광된 부분이 현상에 의해 용해되는 포지티브형과 노광된 부분이 경화되어 남는 네가티브형이 있는데, 포지티브형의 경우 무독성인 알칼리 수용액을 현상액으로 사용할 수 있어 바람직하다.  포지티브형 감광성 폴리이미드 전구체 조성물은 폴리이미드 전구체인 폴리아미드산, 감광성 물질인 디아조나프토퀴논 등을 포함한다.  그러나 포지티브형 감광성 폴리이미드 전구체 조성물은 사용된 폴리아미드산의 카르본산이 알칼리에 대한 용해도가 너무 커서 원하는 패턴을 얻지 못하는 문제점이 있다.  이를 해결하기 위하여 폴리아미드산에 에스테르 결합을 통해서 수산기 1개 이상을 갖는 알코올 화합물을 반응시키는 내용(일본 특개 평10-307393호 참조) 등 카르본산 대신에 페놀성 수산기를 도입한 물질이 제안되었으나, 이 물질은 현상성이 불충분하며 막감소나 기재로부터 수지가 박리되는 문제점이 있다. The photosensitive polyimide precursor composition has a positive type in which the exposed part is dissolved by development and a negative type in which the exposed part is cured. In the positive type, a non-toxic aqueous alkali solution can be used as a developer. The positive photosensitive polyimide precursor composition includes polyamic acid as a polyimide precursor, diazonaphthoquinone as a photosensitive material, and the like. However, the positive photosensitive polyimide precursor composition has a problem in that the carboxylic acid of the polyamic acid used is too soluble in alkali to obtain a desired pattern. In order to solve this problem, a substance in which a phenolic hydroxyl group is introduced instead of carboxylic acid, such as reacting an alcohol compound having at least one hydroxyl group through an ester bond with polyamic acid (see Japanese Patent Application Laid-Open No. 10-307393), has been proposed. This material has insufficient developability and has a problem of reducing the film or peeling the resin from the substrate.
다른 방법으로 폴리벤조옥사졸 전구체에 디아조나프토퀴논 화합물을 혼합한 재료(일본특허공고 소63-96162호 공보)는 최근 주목받고 있으나 폴리벤조옥사졸 전구체 조성물을 실제로 사용하는 경우, 특히 현상시의 미노광부의 막감소량이 크기 때문에 현상 후의 원하는 패턴을 얻기 어렵다. 이를 개선하기 위해 폴리벤조옥사졸 전구체의 분자량을 크게 하면 미노광부의 막감소량은 작아지나 현상시 노광부에 현상 잔여물(스컴)이 발생하여 해상도가 불량해지며 노광부의 현상 시간이 길어지는 문제가 있었다. 이런 문제를 해결하기 위하여, 폴리벤조옥사졸 전구체 조성물에 특정한 페놀 화합물을 첨가함으로써 현상시의 미노광부의 막 감소량이 억제되는 것이 보고되어 있다(일본특허공개 평9-302221호 및 일본특허공개 제2000-292913호). 그러나 이 방법으로는 미노광부의 감소량을 억제하는 효과가 불충함에 따라, 현상 잔여물(스컴)을 발생시키지 않으면서, 막 감소 억제 효과를 크게 하기 위한 연구가 계속 요구되고 있다. 또한 용해도를 조절하기 위하여 사용하는 페놀이 열경화시의 높은 온도에서 분해하거나 부반응을 일으키거나 하는 등의 문제를 일으켜 결과적으로 얻어지는 경화막의 기계적 물성에 큰 손상을 입히기 때문에 이를 대체할 수 있는 용해조절제의 연구 또한 계속 요구되고 있다. In another way, a material in which a diazonaptoquinone compound is mixed with a polybenzoxazole precursor (Japanese Patent Laid-Open No. 63-96162) has recently been attracting attention, but especially when the polybenzoxazole precursor composition is actually used, Since the film reduction amount of the unexposed part is large, it is difficult to obtain a desired pattern after development. In order to improve this problem, if the molecular weight of the polybenzoxazole precursor is increased, the film reduction amount of the unexposed part becomes small, but developing residue (scum) occurs in the exposed part during development, resulting in poor resolution and longer developing time of the exposed part. there was. In order to solve this problem, it is reported that the amount of film reduction of unexposed portions during development is suppressed by adding a specific phenolic compound to the polybenzoxazole precursor composition (Japanese Patent Laid-Open No. 9-302221 and Japanese Patent Laid-Open No. 2000). -292913). However, in this method, the effect of suppressing the reduction amount of the unexposed portion is insufficient, and there is a continuous demand for research to increase the film reduction suppression effect without generating development residues (scum). In addition, the phenol used to control the solubility causes problems such as decomposition or side reactions at high temperatures during thermal curing, which causes great damage to the mechanical properties of the resulting cured film. Research is also continuing.
한편 디스플레이 장치 분야에서도 상기의 폴리벤조옥사졸 전구체를 포함하는 포지티브 감광성 수지 조성물을 유기절연막 혹은 격벽재료로서 적용할 수 있다. 디스플레이 장치 중의 하나인 액정디스플레이 장치는 경량화, 박형화, 저가, 저소비 전력 구동화 및 우수한 집적회로와의 접합성 등의 장점을 가지고 있어 노트북 컴퓨터, 모니터 및 TV화상용으로 그 사용범위가 확대되고 있다. 이와 같은 액정디스플레이 장치는 블랙매트릭스, 컬러필터 및 ITO 화소전극이 형성된 하부 기판과, 액정층, 박막트랜지스터, 축전캐패시터층으로 구성된 능동회로부와 ITO 화소전극이 형성된 상부의 기판을 포함하여 구성된다.  컬러 필터는 화소 사이의 경계부를 차광하기 위해서 투명 기판 상에 정해진 패턴으로 형성된 블랙 매트릭스층 및 각각의 화소를 형성하기 위해 복수의 색(통상적으로, 적(R), 녹(G), 청(B)의 3원색)을 정해진 순서로 배열한 화소부가 차례로 적층된 구조를 취하고 있다. On the other hand, also in the field of display apparatus, the positive photosensitive resin composition containing the said polybenzoxazole precursor can be applied as an organic insulating film or a partition material. Liquid crystal display devices, which are one of display devices, have advantages such as light weight, thinness, low cost, low power consumption, and excellent bonding with integrated circuits, and thus their use range is expanding for notebook computers, monitors, and TV images. The liquid crystal display device includes a lower substrate on which a black matrix, a color filter, and an ITO pixel electrode are formed, an active circuit unit consisting of a liquid crystal layer, a thin film transistor, and a capacitor layer, and an upper substrate on which an ITO pixel electrode is formed. The color filter includes a black matrix layer formed in a predetermined pattern on a transparent substrate for shielding boundaries between pixels, and a plurality of colors (typically red (R), green (G), and blue (B) to form each pixel. The three primary colors) are arranged in a stacked order.
또한 최근 활발히 개발되고 있는 유기발광다이오드(organic light emitting diode, OLED)의 경우에도 화소화된 장치를 구성하기 위해서는 각각의 유기 EL 소자가 매트릭스 형태의 화소로서 배열될 수 있으며, 이들 화소가 동일한 색상을 방출하도록 제조하여 단색표시 장치를 생산하거나 다양한 색상을 방출하도록 적(R), 녹(G), 청(B)의 3원색으로 배열할 수도 있다.In the case of organic light emitting diodes (OLEDs), which are being actively developed recently, in order to construct a pixelated device, each organic EL element may be arranged as a matrix pixel, and these pixels may have the same color. It may be manufactured to emit a monochromatic display device or arranged in three primary colors of red (R), green (G), and blue (B) to emit various colors.
본 발명의 일 구현예는 잔막율, 감도, 및 유전율이 우수하면서 노광부의 잔사 발생률이 낮은 표시장치 포지티브형 감광성 수지 조성물을 제공하기 위한 것이다.One embodiment of the present invention is to provide a display positive type photosensitive resin composition having excellent residual film ratio, sensitivity, and dielectric constant, and low residue generation rate of an exposed part.
본 발명의 다른 일 구현예는 상기 포지티브형 감광성 수지 조성물을 이용한 절연막을 제공하기 위한 것이다.Another embodiment of the present invention is to provide an insulating film using the positive photosensitive resin composition.
본 발명의 또 다른 일 구현예는 상기 절연막을 포함하는 표시장치를 제공하기 위한 것이다.Another embodiment of the present invention is to provide a display device including the insulating layer.
본 발명의 일 구현예는 (A) 알칼리 가용성 수지, (B) 감광성 디아조퀴논 화합물, (C) 비표면적이 100 내지 400 m2/g인 실록산 함유 입자, 및 (D) 용매를 포함하는 포지티브형 감광성 수지 조성물을 제공한다.One embodiment of the present invention is a positive composition comprising (A) an alkali soluble resin, (B) a photosensitive diazoquinone compound, (C) siloxane-containing particles having a specific surface area of 100 to 400 m 2 / g, and (D) a solvent It provides a type photosensitive resin composition.
상기 실록산 함유 입자(C)는 비표면적이 100 내지 300 m2/g일 수 있다.The siloxane-containing particles (C) may have a specific surface area of 100 to 300 m 2 / g.
상기 알칼리 가용성 수지(A)는 폴리벤조옥사졸 전구체, 폴리아믹산, 폴리이미드 또는 이들의 조합일 수 있다.The alkali-soluble resin (A) may be a polybenzoxazole precursor, polyamic acid, polyimide, or a combination thereof.
상기 실록산 함유 입자는 하기 화학식 1로 표시되는 것일 수 있다. The siloxane-containing particles may be represented by the following formula (1).
[화학식 1][Formula 1]
RmSi(OR1)4-m R m Si (OR 1 ) 4-m
상기 화학식 1에서, R은 수소 원자, 히드록시기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알키닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 또는 이들의 조합일 수 있고, R1은 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알키닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 또는 이들의 조합일 수 있으며, m은 1 내지 3의 정수일 수 있다.In Formula 1, R is a hydrogen atom, a hydroxyl group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 To C30 cycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C3 to C30 cycloalkynyl group, substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, R 1 Silver substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C3 To C30 cycloalkenyl group, a substituted or unsubstituted C3 to C30 cycloalkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, m is a tablet of 1 to 3 One can.
상기 포지티브형 감광성 수지 조성물은 상기 (A) 알칼리 가용성 수지 100 중량부에 대하여, 상기 (B) 감광성 디아조퀴논 화합물 5 내지 100 중량부, 상기 (C) 실록산 함유 입자 1 내지 10 중량부, 및 상기 (D) 용매 100 내지 400 중량부를 포함할 수 있다.The positive photosensitive resin composition may contain 5 to 100 parts by weight of the (B) photosensitive diazoquinone compound, 1 to 10 parts by weight of the (C) siloxane-containing particles, and 100 parts by weight of the (A) alkali-soluble resin. (D) 100 to 400 parts by weight of the solvent may be included.
상기 포지티브형 감광성 수지 조성물은 페놀 화합물을 더 포함할 수 있다.The positive photosensitive resin composition may further include a phenol compound.
본 발명의 다른 일 구현예에서는 상기 포지티브형 감광성 수지 조성물을 이용하여 제조된 절연막을 제공한다.In another embodiment of the present invention, an insulating film manufactured by using the positive photosensitive resin composition is provided.
본 발명의 또 다른 일 구현예에서는 상기 절연막을 포함하는 표시장치를 제공한다.In another embodiment of the present invention, a display device including the insulating film is provided.
본 발명의 일 구현예에 따른 절연막용 감광성 수지 조성물, 이를 이용한 절연막 및 이를 포함하는 표시장치는 잔막율, 감도, 및 유전율이 우수하면서 노광부의 잔사 발생률이 낮다.The photosensitive resin composition for an insulating film, the insulating film using the same, and a display device including the same according to an embodiment of the present invention have excellent residual film rate, sensitivity, and dielectric constant, and low residue generation rate of the exposed part.
도 1은 일 구현예에 따른 표시장치를 보여주는 개략도(단면)이다.1 is a schematic view (section) showing a display device according to an embodiment.
도 2는 일 구현예에 따른 감광성 수지조성물의 노광/현상 후의 절연막 패턴을 보여주는 개략도이다.2 is a schematic view showing an insulating film pattern after exposure / development of the photosensitive resin composition according to one embodiment.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
100: 제 1전극 개구부 100: first electrode opening
200: 제 2전극 개구부200: second electrode opening
101: 테이퍼 각도 101: taper angle
102: 유기 발광층102: organic light emitting layer
103: 캐소드103: cathode
104: 절연층104: insulation layer
105: 애노드105: anode
106: TFT 전극층106: TFT electrode layer
107: 글라스107: glass
이하, 본 발명의 구현예를 상세히 설명하기로 한다.  다만, 이는 예시로서 제시되는 것으로, 이에 의해 본 발명이 제한되지는 않으며 본 발명은 후술할 청구항의 범주에 의해 정의될 뿐이다.Hereinafter, embodiments of the present invention will be described in detail. However, this is presented as an example, by which the present invention is not limited and the present invention is defined only by the scope of the claims to be described later.
본 명세서에서 특별한 언급이 없는 한, "치환" 내지 "치환된"이란, 본 발명의 작용기 중의 하나 이상의 수소 원자가 할로겐 원자(-F, -Cl, -Br 또는 -I), 히드록시기, 니트로기, 시아노기, 아미노기(NH2, NH(R200) 또는 N(R201)(R202)이고, 여기서 R200, R201 및 R202는 동일하거나 서로 상이하며, 각각 독립적으로 C1 내지 C10 알킬기임), 아미디노기, 하이드라진기, 하이드라존기, 카르복실기, 치환 또는 비치환된 알킬기, 치환 또는 비치환된 알케닐기, 치환 또는 비치환된 알키닐기, 치환 또는 비치환된 지환족 유기기, 치환 또는 비치환된 아릴기, 및 치환 또는 비치환된 헤테로 고리기로 이루어진 군에서 선택되는 1종 이상의 치환기로 치환된 것을 의미한다.Unless stated otherwise in the specification, "substituted" to "substituted" means that at least one hydrogen atom of the functional group of the present invention is a halogen atom (-F, -Cl, -Br or -I), hydroxy group, nitro group, cya No group, amino group (NH 2 , NH (R 200 ) or N (R 201 ) (R 202 ), wherein R 200 , R 201 and R 202 are the same or different from each other, and are each independently C1 to C10 alkyl group, Amidino group, hydrazine group, hydrazone group, carboxyl group, substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl group, substituted or unsubstituted alkynyl group, substituted or unsubstituted alicyclic organic group, substituted or unsubstituted It means substituted with one or more substituents selected from the group consisting of an aryl group, and a substituted or unsubstituted hetero ring group.
본 명세서에서 특별한 언급이 없는 한, "알킬기"란 C1 내지 C30 알킬기를 의미하고, 구체적으로는 C1 내지 C15 알킬기를 의미하고, "사이클로알킬기"란 C3 내지 C30 사이클로알킬기를 의미하고, 구체적으로는 C3 내지 C18 사이클로알킬기를 의미하고, "알콕시기"란 C1 내지 C30 알콕시기를 의미하고, 구체적으로는 C1 내지 C18 알콕시기를 의미하고, "아릴기"란 C6 내지 C30 아릴기를 의미하고, 구체적으로는 C6 내지 C18 아릴기를 의미하고, "알케닐기"란 C2 내지 C30 알케닐기를 의미하고, 구체적으로는 C2 내지 C18 알케닐기를 의미하고, "알킬렌기"란 C1 내지 C30 알킬렌기를 의미하고, 구체적으로는 C1 내지 C18 알킬렌기를 의미하고, "아릴렌기"란 C6 내지 C30 아릴렌기를 의미하고, 구체적으로는 C6 내지 C16 아릴렌기를 의미한다.Unless stated otherwise in the present specification, "alkyl group" means a C1 to C30 alkyl group, specifically means a C1 to C15 alkyl group, and "cycloalkyl group" means a C3 to C30 cycloalkyl group, specifically C3 To C18 cycloalkyl group, "alkoxy group" means C1 to C30 alkoxy group, specifically C1 to C18 alkoxy group, "aryl group" means C6 to C30 aryl group, specifically C6 to C18 to aryl group, "alkenyl group" means C2 to C30 alkenyl group, specifically C2 to C18 alkenyl group, "alkylene group" means C1 to C30 alkylene group, specifically C1 To C18 alkylene group, an "arylene group" means a C6 to C30 arylene group, specifically, a C6 to C16 arylene group.
또한 본 명세서에서 특별한 언급이 없는 한, "지방족 유기기"란 C1 내지 C30 알킬기, C2 내지 C30 알케닐기, C2 내지 C30 알키닐기, C1 내지 C30 알킬렌기, C2 내지 C30 알케닐렌기, 또는 C2 내지 C30 알키닐렌기를 의미하고, 구체적으로는 C1 내지 C15 알킬기, C2 내지 C15 알케닐기, C2 내지 C15 알키닐기, C1 내지 C15 알킬렌기, C2 내지 C15 알케닐렌기, 또는 C2 내지 C15 알키닐렌기를 의미하고, "지환족 유기기"란 C3 내지 C30 사이클로알킬기, C3 내지 C30 사이클로알케닐기, C3 내지 C30 사이클로알키닐기, C3 내지 C30 사이클로알킬렌기, C3 내지 C30 사이클로알케닐렌기, 또는 C3 내지 C30 사이클로알키닐렌기를 의미하고, 구체적으로는 C3 내지 C15 사이클로알킬기, C3 내지 C15 사이클로알케닐기, C3 내지 C15 사이클로알키닐기, C3 내지 C15 사이클로알킬렌기, C3 내지 C15 사이클로알케닐렌기, 또는 C3 내지 C15 사이클로알키닐렌기를 의미하고, "방향족 유기기"란 C6 내지 C30 아릴기 또는 C6 내지 C30 아릴렌기를 의미하고, 구체적으로는 C6 내지 C16 아릴기 또는 C6 내지 C16 아릴렌기를 의미하고, "헤테로 고리기"란 O, S, N, P, Si 및 이들의 조합으로 이루어진 군에서 선택되는 헤테로 원자를 하나의 고리 내에 1개 내지 3개 함유하는 C2 내지 C30 헤테로사이클로알킬기, C2 내지 C30 헤테로사이클로알킬렌기, C2 내지 C30 헤테로사이클로알케닐기, C2 내지 C30 헤테로사이클로알케닐렌기, C2 내지 C30 헤테로사이클로알키닐기, C2 내지 C30 헤테로사이클로알키닐렌기, C2 내지 C30 헤테로아릴기, 또는 C2 내지 C30 헤테로아릴렌기를 의미하고, 구체적으로는 O, S, N, P, Si 및 이들의 조합으로 이루어진 군에서 선택되는 헤테로 원자를 하나의 고리 내에 1개 내지 3개 함유하는 C2 내지 C15 헤테로사이클로알킬기, C2 내지 C15 헤테로사이클로알킬렌기, C2 내지 C15 헤테로사이클로알케닐기, C2 내지 C15 헤테로사이클로알케닐렌기, C2 내지 C15 헤테로사이클로알키닐기, C2 내지 C15 헤테로사이클로알키닐렌기, C2 내지 C15 헤테로아릴기, 또는 C2 내지 C15 헤테로아릴렌기를 의미한다.Also, unless stated otherwise in the specification, an "aliphatic organic group" means a C1 to C30 alkyl group, a C2 to C30 alkenyl group, a C2 to C30 alkynyl group, a C1 to C30 alkylene group, a C2 to C30 alkenylene group, or a C2 to C30 group. An alkynylene group, and specifically, a C1 to C15 alkyl group, a C2 to C15 alkenyl group, a C2 to C15 alkynyl group, a C1 to C15 alkylene group, a C2 to C15 alkenylene group, or a C2 to C15 alkynylene group, and Alicyclic organic group "means a C3 to C30 cycloalkyl group, a C3 to C30 cycloalkenyl group, a C3 to C30 cycloalkynyl group, a C3 to C30 cycloalkylene group, a C3 to C30 cycloalkenylene group, or a C3 to C30 cycloalkynylene group Specifically, C3 to C15 cycloalkyl group, C3 to C15 cycloalkenyl group, C3 to C15 cycloalkynyl group, C3 to C15 cycloalkylene group, C3 to C15 cycloalkenylene group, Or a C3 to C15 cycloalkynylene group, "aromatic organic group" means a C6 to C30 aryl group or a C6 to C30 arylene group, and specifically means a C6 to C16 aryl group or a C6 to C16 arylene group, "Hetero ring group" means a C2 to C30 heterocycloalkyl group, C2 to C30 hetero, containing one to three heteroatoms selected from the group consisting of O, S, N, P, Si and combinations thereof in one ring Cycloalkylene group, C2 to C30 heterocycloalkenyl group, C2 to C30 heterocycloalkenylene group, C2 to C30 heterocycloalkynyl group, C2 to C30 heterocycloalkynylene group, C2 to C30 heteroaryl group, or C2 to C30 hetero It means an arylene group, specifically, containing one to three hetero atoms selected from the group consisting of O, S, N, P, Si and combinations thereof in one ring C2 to C15 heterocycloalkyl group, C2 to C15 heterocycloalkylene group, C2 to C15 heterocycloalkenyl group, C2 to C15 heterocycloalkenylene group, C2 to C15 heterocycloalkynyl group, C2 to C15 heterocycloalkynylene group, C2 To C15 heteroaryl group, or C2 to C15 heteroarylene group.
본 발명의 일 구현예에 따른 포지티브형 감광성 수지 조성물은 (A) 알칼리 가용성 수지, (B) 감광성 디아조퀴논 화합물, (C) 비표면적이 100 내지 400 m2/g인 실록산 함유 입자, 및 (D) 용매를 포함할 수 있다.  Positive type photosensitive resin composition according to an embodiment of the present invention is (A) alkali-soluble resin, (B) photosensitive diazoquinone compound, (C) siloxane-containing particles having a specific surface area of 100 to 400 m 2 / g, and ( D) a solvent.
이하 상기 포지티브형 감광성 수지 조성물의 각 구성에 대하여 구체적으로 설명한다.Hereinafter, each structure of the said positive photosensitive resin composition is demonstrated concretely.
(A) 알칼리 가용성 수지(A) alkali-soluble resin
상기 알칼리 가용성 수지(A)는 본 발명이 속하는 기술분야에서 일반적으로 사용되는 알칼리 가용성 수지라면 제한 없이 사용 가능하다.  구체적으로 상기 알칼리 가용성 수지는 하기 화학식 2로 표시되는 반복단위를 포함하는 폴리벤조옥사졸 전구체, 하기 화학식 3으로 표시되는 반복단위를 포함하는 폴리아믹산, 및 하기 화학식 4로 표시되는 반복단위를 포함하는 폴리이미드로부터 선택되는 적어도 하나를 사용할 수 있다. The alkali-soluble resin (A) can be used without limitation so long as it is an alkali-soluble resin generally used in the art. Specifically, the alkali-soluble resin includes a polybenzoxazole precursor including a repeating unit represented by the following Formula 2, a polyamic acid including the repeating unit represented by the following Formula 3, and a repeating unit represented by the following Formula 4. At least one selected from polyimides can be used.
폴리벤조옥사졸 전구체Polybenzoxazole precursors
[화학식 2][Formula 2]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-44
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-44
상기 화학식 2에서, X1은 치환 또는 비치환된 C6 내지 C30 방향족 유기기이고, Y1은 치환 또는 비치환된 C6 내지 C30 방향족 유기기, 치환 또는 비치환된 2가 내지 6가의 C1 내지 C30 지방족 유기기, 또는 치환 또는 비치환된 2가 내지 6가의 C3 내지 C30 지환족 유기기이다.In Formula 2, X 1 is a substituted or unsubstituted C6 to C30 aromatic organic group, Y1 is a substituted or unsubstituted C6 to C30 aromatic organic group, a substituted or unsubstituted divalent to hexavalent C1 to C30 aliphatic oil Or a substituted or unsubstituted divalent to hexavalent C3 to C30 alicyclic organic group.
상기 화학식 2에서, X1은 방향족 유기기로서 방향족 디아민으로부터 유도되는 잔기일 수 있다.In Formula 2, X 1 may be a residue derived from an aromatic diamine as an aromatic organic group.
상기 방향족 디아민의 예로는 3,3'-디아미노-4,4'-디히드록시비페닐, 4,4'-디아미노-3,3'-디히드록시비페닐, 비스(3-아미노-4-히드록시페닐)프로판, 비스(4-아미노-3-히드록시페닐)프로판, 비스(3-아미노-4-히드록시페닐)술폰, 비스(4-아미노-3-히드록시페닐)술폰, 2,2-비스(3-아미노-4-히드록시페닐)-1,1,1,3,3,3-헥사플루오로프로판, 2,2-비스(4-아미노-3-히드록시페닐)-1,1,1,3,3,3-헥사플루오로프로판, 2,2-비스(3-아미노-4-히드록시-5-트리플루오로메틸페닐)헥사플루오로프로판, 2,2-비스(3-아미노-4-히드록시-6-트리플루오로메틸페닐)헥사플루오로프로판, 2,2-비스(3-아미노-4-히드록시-2-트리플루오로메틸페닐)헥사플루오로프로판, 2,2-비스(4-아미노-3-히드록시-5-트리플루오로메틸페닐)헥사플루오로프로판, 2,2-비스(4-아미노-3-히드록시-6-트리플루오로메틸페닐)헥사플루오로프로판, 2,2-비스(4-아미노-3-히드록시-2-트리플루오로메틸페닐)헥사플루오로프로판, 2,2-비스(3-아미노-4-히드록시-5-펜타플루오로에틸페닐)헥사플루오로프로판, 2-(3-아미노-4-히드록시-5-트리플루오로메틸페닐)-2-(3-아미노-4-히드록시-5-펜타플루오로에틸페닐)헥사플루오로프로판, 2-(3-아미노-4-히드록시-5-트리플루오로메틸페닐)-2-(3-히드록시-4-아미노-5-트리플루오로메틸페닐)헥사플루오로프로판, 2-(3-아미노-4-히드록시-5-트리플루오로메틸페닐)-2-(3-히드록시-4-아미노-6-트리플루오로메틸페닐)헥사플루오로프로판, 2-(3-아미노-4-히드록시-5-트리플루오로메틸페닐)-2-(3-히드록시-4-아미노-2-트리플루오로메틸페닐)헥사플루오로프로판, 2-(3-아미노-4-히드록시-2-트리플루오로메틸페닐)-2-(3-히드록시-4-아미노-5-트리플루오로메틸페닐)헥사플루오로프로판 및 2-(3-아미노-4-히드록시-6-트리플루오로메틸페닐)-2-(3-히드록시-4-아미노-5-트리플루오로메틸페닐)헥사플루오로프로판으로부터 선택되는 적어도 하나를 사용할 수 있으나, 이에 한정되는 것은 아니다.Examples of the aromatic diamine include 3,3'-diamino-4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis (3-amino- 4-hydroxyphenyl) propane, bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4-amino-3-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-5-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-6-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-2-trifluoromethylphenyl) hexafluoropropane, 2 , 2-bis (4-amino-3-hydroxy-5-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (4-amino-3-hydroxy-6-trifluoromethylphenyl) hexafluoro rope Ropan, 2,2-bis (4-amino-3-hydroxy-2-trifluoromethylphenyl) hexafluoropropane, 2,2-bis (3-amino-4-hydroxy-5-pentafluoroethyl Phenyl) hexafluoropropane, 2- (3-amino-4-hydroxy-5-trifluoromethylphenyl) -2- (3-amino-4-hydroxy-5-pentafluoroethylphenyl) hexafluoro Propane, 2- (3-amino-4-hydroxy-5-trifluoromethylphenyl) -2- (3-hydroxy-4-amino-5-trifluoromethylphenyl) hexafluoropropane, 2- (3 -Amino-4-hydroxy-5-trifluoromethylphenyl) -2- (3-hydroxy-4-amino-6-trifluoromethylphenyl) hexafluoropropane, 2- (3-amino-4-hydroxy Hydroxy-5-trifluoromethylphenyl) -2- (3-hydroxy-4-amino-2-trifluoromethylphenyl) hexafluoropropane, 2- (3-amino-4-hydroxy-2-trifluoro Rhomethylphenyl) -2- (3-hydroxy-4-amino-5-trifluoromethylphenyl) hexafluoropropane and 2- (3-a No-4-hydroxy-6-trifluoromethylphenyl) -2- (3-hydroxy-4-amino-5-trifluoromethylphenyl) hexafluoropropane can be used, but is not limited thereto It doesn't happen.
상기 화학식 2에서, Y1은 방향족 유기기, 2가 내지 6가의 지방족 유기기, 또는 2가 내지 6가의 지환족 유기기로서, 디카르복시산의 잔기 또는 디카르복시산 유도체의 잔기일 수 있다.  구체적으로는 Y1은 방향족 유기기, 또는 2가 내지 6가의 지환족 유기기일 수 있다.In Formula 2, Y 1 is an aromatic organic group, a divalent to hexavalent aliphatic organic group, or a divalent to hexavalent alicyclic organic group, and may be a residue of a dicarboxylic acid or a residue of a dicarboxylic acid derivative. Specifically, Y 1 may be an aromatic organic group or a divalent to hexavalent alicyclic organic group.
상기 디카르복시산의 예로는 Y1(COOH)2(여기서 Y1은 상기 화학식 1의 Y1과 동일함)를 들 수 있다.Examples of the dicarboxylic acid may include Y 1 (COOH) 2 , wherein Y 1 is the same as Y 1 of Chemical Formula 1.
상기 디카르복시산 유도체의 예로는 Y1(COOH)2의 카르보닐 할라이드 유도체, 또는 Y1(COOH)2와 1-히드록시-1,2,3-벤조트리아졸 등을 반응시킨 활성 에스테르형 유도체인 활성 화합물(여기서 Y1은 상기 화학식 1의 Y1과 동일함)을 들 수 있다.Examples of the di-carboxylic acid derivatives is Y 1 (COOH) 2 of the carbonyl halide derivative, or Y 1 (COOH) 2 and 1-hydroxy-1,2,3-benzotriazole-active ester derivative by reacting a sol such as the active compounds may be mentioned (wherein Y 1 is the same hereinafter as Y 1 in the formula (1)).
상기 디카르복시산 유도체의 구체적인 예로는 4,4'-옥시디벤조일클로라이드, 디페닐옥시디카르보닐디클로라이드, 비스(페닐카르보닐클로라이드)술폰, 비스(페닐카르보닐클로라이드)에테르, 비스(페닐카르보닐클로라이드)페논, 프탈로일디클로라이드, 테레프탈로일디클로라이드, 이소프탈로일디클로라이드, 디카르보닐디클로라이드, 디페닐옥시디카르복실레이트디벤조트리아졸 또는 이들의 조합을 들 수 있으나, 이에 한정되는 것은 아니다.Specific examples of the dicarboxylic acid derivatives include 4,4'-oxydibenzoyl chloride, diphenyloxydicarbonyldichloride, bis (phenylcarbonyl chloride) sulfone, bis (phenylcarbonyl chloride) ether, bis (phenylcarbonyl chloride). ) Phenone, phthaloyldichloride, terephthaloyldichloride, isophthaloyldichloride, dicarbonyldichloride, diphenyloxydicarboxylate dibenzotriazole or combinations thereof, but is not limited thereto.
상기 폴리벤조옥사졸 전구체는 분지쇄 말단의 어느 한쪽 또는 양쪽에, 반응성 말단봉쇄 단량체로부터 유도된 열중합성 관능기를 가질 수 있다. 상기 반응성 말단봉쇄 단량체는 탄소-탄소 이중결합을 갖는 모노아민류 또는 모노언하이드라이드류, 또는 이들의 조합인 것이 바람직하다. 상기 모노아민류는 톨루이딘, 디메틸아닐린, 에틸아닐린, 아미노페놀, 아미노벤질알콜, 아미노인단(aminoindan), 아미노아세톤페논, 또는 이들의 조합 등을 사용할 수 있으나 이에 한정되는 것은 아니다.The polybenzoxazole precursor may have a thermopolymerizable functional group derived from a reactive endblocking monomer at either or both of the branched chain ends. The reactive end-blocking monomer is preferably monoamines or monoanhydrides having a carbon-carbon double bond, or a combination thereof. The monoamines may include, but are not limited to, toluidine, dimethylaniline, ethylaniline, aminophenol, aminobenzyl alcohol, aminoindan, aminoacetonephenone, or a combination thereof.
폴리아믹산 및 폴리이미드Polyamic acid and polyimide
[화학식 3][Formula 3]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-55
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-55
[화학식 4][Formula 4]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-57
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-57
상기 화학식 3 및 4에서, X2 및 X3은 각각 독립적으로 치환 또는 비치환된 C6 내지 C30 방향족 유기기, 치환 또는 비치환된 2가 내지 6가의 C1 내지 C30 지방족 유기기, 치환 또는 비치환된 2가 내지 6가의 C3 내지 C30 지환족 유기기, 또는 유기 실란기이다.In Formulas 3 and 4, X 2 and X 3 are each independently a substituted or unsubstituted C6 to C30 aromatic organic group, a substituted or unsubstituted divalent to 6-valent C1 to C30 aliphatic organic group, a substituted or unsubstituted Or a divalent to hexavalent C3 to C30 alicyclic organic group or an organic silane group.
구체적으로는 상기 화학식 3 및 4에서 상기 X2 및 X3은 각각 독립적으로 방향족 디아민, 지환족 디아민 또는 실리콘 디아민으로부터 유도되는 잔기일 수 있다.  이때, 상기 방향족 디아민, 지환족 디아민 및 실리콘 디아민은 단독으로 또는 이들을 1종 이상 혼합하여 사용할 수 있다.Specifically, in Formulas 3 and 4, X 2 and X 3 may each independently be a residue derived from an aromatic diamine, an alicyclic diamine, or a silicone diamine. At this time, the aromatic diamine, alicyclic diamine and silicone diamine may be used alone or in combination of one or more thereof.
상기 방향족 디아민의 예로는 3,4'-디아미노디페닐에테르, 4,4'-디아미노디페닐에테르, 3,4'-디아미노디페닐메탄, 4,4'-디아미노디페닐메탄, 4,4'-디아미노디페닐술폰, 4,4'-디아미노디페닐술피드, 벤지딘, m-페닐렌디아민, p-페닐렌디아민, 1,5-나프탈렌디아민, 2,6-나프탈렌디아민, 비스[4-(4-아미노페녹시)페닐]술폰, 비스(3-아미노페녹시페닐)술폰, 비스(4-아미노페녹시)비페닐, 비스[4-(4-아미노페녹시)페닐]에테르, 1,4-비스(4-아미노페녹시)벤젠, 이들의 방향족 고리에 알킬기나 할로겐 원자가 치환된 화합물, 또는 이들의 조합을 들 수 있으나, 이에 한정되는 것은 아니다.Examples of the aromatic diamine include 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfide, benzidine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine , Bis [4- (4-aminophenoxy) phenyl] sulfone, bis (3-aminophenoxyphenyl) sulfone, bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl ] Ether, 1, 4-bis (4-aminophenoxy) benzene, the compound which substituted the alkyl group or the halogen atom in these aromatic rings, or a combination thereof is mentioned, But it is not limited to these.
상기 지환족 디아민의 예로는 1,2-시클로헥실 디아민, 1,3-시클로헥실 디아민, 또는 이들의 조합을 들 수 있으나, 이에 한정되는 것은 아니다.Examples of the alicyclic diamine include, but are not limited to, 1,2-cyclohexyl diamine, 1,3-cyclohexyl diamine, or a combination thereof.
상기 실리콘 디아민의 예로는 비스(4-아미노페닐)디메틸실란, 비스(4-아미노페닐)테트라메틸실록산, 비스(p-아미노페닐)테트라메틸디실록산, 비스(γ-아미노프로필)테트라메틸디실록산, 1,4-비스(γ-아미노프로필디메틸실릴)벤젠, 비스(4-아미노부틸)테트라메틸디실록산, 비스(γ-아미노프로필)테트라페닐디실록산, 1,3-비스(아미노프로필)테트라메틸디실록산, 또는 이들의 조합을 들 수 있으나, 이에 한정되는 것은 아니다.Examples of the silicone diamine include bis (4-aminophenyl) dimethylsilane, bis (4-aminophenyl) tetramethylsiloxane, bis (p-aminophenyl) tetramethyldisiloxane, bis (γ-aminopropyl) tetramethyldisiloxane , 1,4-bis (γ-aminopropyldimethylsilyl) benzene, bis (4-aminobutyl) tetramethyldisiloxane, bis (γ-aminopropyl) tetraphenyldisiloxane, 1,3-bis (aminopropyl) tetra Methyldisiloxane, or a combination thereof, but is not limited thereto.
상기 화학식 3 및 4에서, Y2 및 Y3은 각각 독립적으로 치환 또는 비치환된 C6 내지 C30 방향족 유기기, 치환 또는 비치환된 4가 내지 6가의 C1 내지 C30 지방족 유기기, 또는 치환 또는 비치환된 4가 내지 6가의 C3 내지 C30 지환족 유기기이다.In Formulas 3 and 4, Y 2 and Y 3 are each independently substituted or unsubstituted C6 to C30 aromatic organic group, substituted or unsubstituted tetravalent to hexavalent C1 to C30 aliphatic organic group, or substituted or unsubstituted Tetravalent C6 to C30 alicyclic organic group.
상기 Y2 및 Y3은 각각 독립적으로 방향족 산이무수물, 또는 지환족 산이무수물로부터 유도된 잔기일 수 있다.  이때, 상기 방향족 산이무수물 및 상기 지환족 산이무수물은 단독으로 또는 이들을 1종 이상 혼합하여 사용할 수 있다.Y 2 and Y 3 may each independently be a residue derived from an aromatic acid dianhydride or an alicyclic acid dianhydride. In this case, the aromatic acid dianhydride and the alicyclic acid dianhydride may be used alone or in combination of one or more thereof.
상기 방향족 산이무수물의 예로는 피로멜리트산 이무수물(pyromellitic dianhydride); 벤조페논-3,3',4,4'-테트라카르복실산 이무수물(benzophenone-3,3',4,4'-tetracarboxylic dianhydride)과 같은 벤조페논 테트라카르복실산 이무수물(benzophenone tetracarboxylic dianhydride); 4,4'-옥시디프탈산 이무수물(4,4'-oxydiphthalic dianhydride)과 같은 옥시디프탈산 이무수물(oxydiphthalic dianhydride); 3,3',4,4'-비프탈산 이무수물(3,3',4,4'-biphthalic dianhydride)과 같은 비프탈산 이무수물(biphthalic dianhydride); 4,4'-(헥사플루오로이소프로필리덴)디프탈산 이무수물(4,4'-(hexafluoroisopropyledene)diphthalic dianhydride)과 같은 (헥사플루오로이소프로필리덴)디프탈산 이무수물((hexafluoroisopropyledene)diphthalic dianhydride); 나프탈렌-1,4,5,8-테트라카르복실산 이무수물(naphthalene-1,4,5,8-tetracarboxylic dianhydride); 3,4,9,10-퍼릴렌테트라카르복실산 이무수물(3,4,9,10-perylenetetracarboxylic dianhydride) 등을 들 수 있으나, 이에 한정되는 것은 아니다.Examples of the aromatic acid dianhydride include pyromellitic dianhydride; Benzophenone tetracarboxylic dianhydride such as benzophenone-3,3 ', 4,4'-tetracarboxylic dianhydride ; Oxydiphthalic dianhydride such as 4,4'-oxydiphthalic dianhydride; Biphthalic dianhydrides such as 3,3 ', 4,4'-biphthalic dianhydride (3,3', 4,4'-biphthalic dianhydride); (Hexafluoroisopropyledene) diphthalic dianhydride, such as 4,4 '-(hexafluoroisopropylidene) diphthalic dianhydride (4,4'-(hexafluoroisopropyledene) diphthalic dianhydride) ; Naphthalene-1,4,5,8-tetracarboxylic dianhydride; 3,4,9,10-perylenetetracarboxylic dianhydride (3,4,9,10-perylenetetracarboxylic dianhydride) and the like, but are not limited thereto.
상기 지환족 산이무수물의 예로는 1,2,3,4-사이클로부탄테트라카르복실산 이무수물(1,2,3,4-cyclobutanetetracarboxylic dianhydride), 1,2,3,4-사이클로펜탄테트라카르복실산 이무수물(1,2,3,4-cyclopentanetetracarboxylic dianhydride), 5-(2,5-디옥소테트라하이드로퓨릴)-3-메틸-사이클로헥산-1,2-디카르복실산 이무수물(5-(2,5-dioxotetrahydrofuryl)-3-methyl-cyclohexane-1,2-dicarboxylic anhydride), 4-(2,5-디옥소테트라하이드로퓨란-3-일)-테트랄린-1,2-디카르복실산 이무수물(4-(2,5-dioxotetrahydrofuran-3-yl)-tetralin-1,2-dicarboxylic anhydride),  바이사이클로옥텐-2,3,5,6-테트라카르복실산 이무수물(bicyclooctene-2,3,5,6-tetracarboxylic dianhydride), 바이사이클로옥텐-1,2,4,5-테트라카르복실산 이무수물(bicyclooctene-1,2,4,5-tetracarboxylic dianhydride)를 들 수 있으나, 이에 한정되는 것은 아니다.Examples of the alicyclic acid dianhydride include 1,2,3,4-cyclobutanetetracarboxylic dianhydride (1,2,3,4-cyclobutanetetracarboxylic dianhydride), 1,2,3,4-cyclopentanetetracarboxyl Acid dianhydrides (1,2,3,4-cyclopentanetetracarboxylic dianhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-cyclohexane-1,2-dicarboxylic dianhydride (5- (2,5-dioxotetrahydrofuryl) -3-methyl-cyclohexane-1,2-dicarboxylic anhydride), 4- (2,5-dioxotetrahydrofuran-3-yl) -tetraline-1,2-dicar Acid dianhydride (4- (2,5-dioxotetrahydrofuran-3-yl) -tetralin-1,2-dicarboxylic anhydride), bicyclooctene-2,3,5,6-tetracarboxylic dianhydride (bicyclooctene- 2,3,5,6-tetracarboxylic dianhydride), bicyclooctene-1,2,4,5-tetracarboxylic dianhydride (bicyclooctene-1,2,4,5-tetracarboxylic dianhydride), but It is not limited.
상기 알칼리 가용성 수지는 3,000 내지 300,000 g/mol의 중량평균분자량(Mw)을 가질 수 있고, 구체적으로는 5,000 내지 30,000 g/mol의 중량평균분자량(Mw)을 가질 수 있다.  상기 범위의 중량평균분자량(Mw)을 가질 경우 알칼리 수용액으로 현상시 비노광부에서 충분한 잔막율을 얻을 수 있고, 효율적으로 패터닝을 할 수 있다.The alkali-soluble resin may have a weight average molecular weight (Mw) of 3,000 to 300,000 g / mol, specifically, may have a weight average molecular weight (Mw) of 5,000 to 30,000 g / mol. When having a weight average molecular weight (Mw) in the above range can be obtained a sufficient residual film ratio in the non-exposed part when developing with an aqueous alkali solution, it can be efficiently patterned.
(B) 감광성 디아조퀴논 화합물(B) photosensitive diazoquinone compound
상기 감광성 디아조퀴논 화합물은 1,2-벤조퀴논디아지드 구조 또는 1,2-나프토퀴논디아지드 구조를 가지는 화합물이 사용될 수 있다.As the photosensitive diazoquinone compound, a compound having a 1,2-benzoquinonediazide structure or a 1,2-naphthoquinonediazide structure may be used.
상기 감광성 디아조퀴논 화합물은 구체적으로 하기 화학식 5 및 화학식 7 내지 9로 표시되는 화합물로부터 선택되는 적어도 하나를 사용할 수 있으나, 이에 한정되는 것은 아니다.As the photosensitive diazoquinone compound, at least one selected from compounds represented by the following Chemical Formula 5 and Chemical Formulas 7 to 9 may be used, but is not limited thereto.
[화학식 5][Formula 5]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-72
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-72
상기 화학식 5에서 R60 내지 R62는 각각 독립적으로 수소 원자, 또는 치환 또는 비치환된 C1 내지 C30 알킬기일 수 있고, 구체적으로는 메틸기일 수 있다.R 60 to R 62 in Formula 5 may each independently be a hydrogen atom or a substituted or unsubstituted C1 to C30 alkyl group, and specifically, may be a methyl group.
상기 화학식 5에서 R63 내지 R65는 각각 독립적으로 OQ 일 수 있고, 상기 Q는 수소 원자, 하기 화학식 6a로 표시되는 작용기 또는 하기 화학식 6b로 표시되는 작용기일 수 있으며, 이때 Q는 동시에 수소일 수는 없다.In Formula 5, R 63 to R 65 may be each independently OQ, and Q may be a hydrogen atom, a functional group represented by Formula 6a, or a functional group represented by Formula 6b, wherein Q may be hydrogen at the same time. There is no.
상기 화학식 5에서 n20 내지 n22는 각각 0 내지 5의 정수일 수 있다.In Formula 5, n20 'to n22 may each be an integer of 0 to 5.
[화학식 6a][Formula 6a]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-77
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-77
[화학식 6b][Formula 6b]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-79
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-79
[화학식 7][Formula 7]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-81
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-81
상기 화학식 7에서 R66은 수소 원자, 또는 치환 또는 비치환된 C1 내지 C30 알킬기일 수 있고, R67 내지 R69는 각각 독립적으로 OQ 일 수 있고, 상기 Q는 상기 화학식 5에서 정의된 것과 동일하고, n23 내지 n25는 각각 0 내지 5의 정수일 수 있다.In Formula 7, R 66 may be a hydrogen atom, or a substituted or unsubstituted C1 to C30 alkyl group, R 67 to R 69 may be each independently OQ, and Q is the same as defined in Formula 5 above , n23 to n25 may be integers of 0 to 5, respectively.
[화학식 8][Formula 8]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-84
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-84
상기 화학식 8에서 A3은 CO 또는 CR74R75 일 수 있고, 상기 R74 및 R75는 각각 독립적으로 치환 또는 비치환된 C1 내지 C30 알킬기일 수 있다.In Formula 8, A 3 may be CO or CR 74 R 75 , and R 74 and R 75 may be each independently a substituted or unsubstituted C1 to C30 alkyl group.
상기 화학식 8에서 R70 내지 R73은 각각 독립적으로 수소 원자, 치환 또는 비치환된 C1 내지 C30 알킬기, OQ 또는 NHQ 일 수 있고, 상기 Q는 상기 화학식 5에서 정의된 것과 동일하다.R 70 to R 73 in Formula 8 may each independently represent a hydrogen atom, a substituted or unsubstituted C1 to C30 alkyl group, OQ or NHQ, wherein Q is the same as defined in Formula 5 above.
상기 화학식 8에서 n26 내지 n29은 각각 0 내지 4의 정수일 수 있고, n26+n27 및 n28+n29는 각각 5 이하의 정수일 수 있다.In Formula 8, n26 'to n29 may each be an integer of 0 to 4, and n26 + n27' and n28 + n29 may each be an integer of 5 or less.
단, 상기 R70 및 R71 중 적어도 하나는 OQ 일 수 있으며, 하나의 방향족 환에는 OQ가 1 내지 3개 포함될 수 있고, 다른 하나의 방향족 환에는 OQ가 1 내지 4개 포함될 수 있다.However, at least one of R 70 and R 71 may be OQ, one aromatic ring may include 1 to 3 OQ, and the other aromatic ring may include 1 to 4 OQ.
[화학식 9][Formula 9]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-90
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-90
상기 화학식 9에서, In Chemical Formula 9,
R74 내지 R81는 각각 독립적으로 수소 원자, 또는 치환 또는 비치환된 C1 내지 C30 알킬기일 수 있고, n30 및 n31은 각각 1 내지 5의 정수일 수 있고, Q는 상기 화학식 5에서 정의된 것과 동일하다.R 74 to R 81 may each independently be a hydrogen atom or a substituted or unsubstituted C1 to C30 alkyl group, n30 and n31 may each be an integer of 1 to 5, and Q is the same as defined in Chemical Formula 5 above .
상기 감광성 디아조퀴논 화합물은 상기 알칼리 가용성 수지 100 중량부에 대하여 5 내지 100 중량부로, 구체적으로는 10 내지 50 중량부로 포지티브형 감광성 수지 조성물 내에 포함될 수 있다.  상기 범위 내로 포함될 경우 노광에 의해 잔사 없이 패턴 형성이 잘되며, 현상시 막 두께 손실이 없고 양호한 패턴을 얻을 수 있다.The photosensitive diazoquinone compound may be included in the positive photosensitive resin composition in an amount of 5 to 100 parts by weight, specifically 10 to 50 parts by weight, based on 100 parts by weight of the alkali-soluble resin. When included in the above range, the pattern is well formed without the residue by exposure, there is no loss of film thickness during development, it is possible to obtain a good pattern.
(C) 실록산 함유 입자(C) siloxane-containing particles
상기 실록산 함유 입자는 실록산 함유 화합물을 분무건조법으로 표면 개질하여 생성할 수 있다.  이렇게 형성된 실록산 함유 입자는 나노미터 미만의 크기일 수 있고, 결정질 또는 비정질이며, 일반 실리카에 비해 순도가 높기 때문에 투명하여 빛의 굴절률이 낮고 광진행 손실이 적다.The siloxane-containing particles may be produced by surface modification of the siloxane-containing compound by spray drying. The siloxane-containing particles thus formed may be less than nanometers in size, are crystalline or amorphous, and because of their higher purity than normal silica, are transparent and have low refractive index and low light propagation loss.
일 구현예에 따른 실록산 함유 입자의 비표면적은 100 내지 400 m2/g, 구체적으로 100 내지 300 m2/g일 수 있다.  상기 실록산 함유 입자의 비표면적이 상기 범위 내인 경우, 포지티브형 감광성 격벽 화소층은 고감도를 유지하면서, 내열성 및 절연성의 기능이 강화될 수 있다.The specific surface area of the siloxane-containing particles according to one embodiment may be 100 to 400 m 2 / g, specifically 100 to 300 m 2 / g. When the specific surface area of the siloxane-containing particles is within the above range, the positive type photosensitive partition pixel layer may maintain the high sensitivity, and the functions of heat resistance and insulation may be enhanced.
상기 실록산 함유 입자는 구체적으로 하기 화학식 1로 표시될 수 있다.The siloxane-containing particles may be specifically represented by the following formula (1).
[화학식 1][Formula 1]
RmSi(OR1)4-m R m Si (OR 1 ) 4-m
상기 화학식 1에서, R은 수소 원자, 히드록시기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알키닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 또는 이들의 조합일 수 있고, R1은 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알키닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 또는 이들의 조합일 수 있으며, m은 1 내지 3의 정수일 수 있다.In Formula 1, R is a hydrogen atom, a hydroxyl group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 To C30 cycloalkyl group, substituted or unsubstituted C3 to C30 cycloalkenyl group, substituted or unsubstituted C3 to C30 cycloalkynyl group, substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, and R1 is Substituted or unsubstituted C1 to C30 alkyl group, substituted or unsubstituted C2 to C30 alkenyl group, substituted or unsubstituted C2 to C30 alkynyl group, substituted or unsubstituted C3 to C30 cycloalkyl group, substituted or unsubstituted C3 to A C30 cycloalkenyl group, a substituted or unsubstituted C3 to C30 cycloalkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, m is an integer of 1 to 3 Can.
상기 실록산 함유 입자는 알칼리 가용성 수지 100 중량부에 대하여 1 내지 10 중량부, 구체적으로 1 내지 7중량부 포함될 수 있다.  상기 범위 내로 포함될 경우, 실리카 입자의 뭉침 현상을 방지하여 기판에 균일하게 도포될 수 있고, 광손실 없이 고내열성과 절연성을 갖는 감광성 화소 격벽층 조성물을 얻을 수 있다.The siloxane-containing particles may be included in 1 to 10 parts by weight, specifically 1 to 7 parts by weight based on 100 parts by weight of alkali-soluble resin. When included in the above range, it is possible to uniformly apply to the substrate by preventing the aggregation of the silica particles, it is possible to obtain a photosensitive pixel partition layer composition having high heat resistance and insulation without light loss.
(D) 용매(D) solvent
상기 표시장치 절연막용 감광성 수지 조성물은 각 성분을 용이하게 용해시킬 수 있는 용매를 포함할 수 있다.The photosensitive resin composition for the display device insulating film may include a solvent capable of easily dissolving each component.
상기 용매의 구체적인 예로는 -메틸-2-피롤리돈, γ-부티로락톤, N,N-디메틸아세트아미드, 디메틸설폭사이드, 디에틸렌글리콜디메틸에테르, 디에틸렌 글리콜디에틸에테르, 디에틸렌글리콜디부틸에테르, 프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노메틸에테르아세테이트, 락트산 메틸, 락트산에틸, 락트산부틸, 메틸-1,3-부틸렌글리콜아세테이트, 1,3-부틸렌글리콜-3-모노메틸에테르, 피루브산메틸, 피루브산에틸, 메틸-3-메톡시 프로피오네이트 등을 들 수 있다. 이러한 용매는 단독으로 또는 2종 이상 병용하여 사용할 수 있다.Specific examples of the solvent include -methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol di Butyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol 3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxy propionate, etc. are mentioned. These solvents can be used alone or in combination of two or more thereof.
상기 용매는 상기 알칼리 가용성 수지 100 중량부에 대하여 100 내지 400 중량부로 포지티브형 감광성 수지 조성물 내에 포함될 수 있다.  상기 범위 내로 포함될 경우 충분한 두께의 막을 코팅할 수 있고, 우수한 용해도 및 코팅성을 가질 수 있다.The solvent may be included in the positive photosensitive resin composition at 100 to 400 parts by weight based on 100 parts by weight of the alkali-soluble resin. When included in the above range can be a film of a sufficient thickness, it may have excellent solubility and coating properties.
구체적으로 상기 용매는 상기 포지티브형 감광성 수지 조성물의 고형분 함량이 3 내지 50 중량%가 되도록, 구체적으로는 5 내지 30 중량%가 되도록 사용할 수 있다.Specifically, the solvent may be used so that the solid content of the positive photosensitive resin composition is 3 to 50% by weight, specifically 5 to 30% by weight.
(E) 페놀 화합물(E) phenolic compounds
상기 표시장치 절연막용 감광성 수지 조성물은 페놀 화합물을 더 포함할 수 있다.  상기 페놀 화합물은 감광성 수지 조성물로 패턴을 형성하기 위해 알칼리 수용액으로 현상시 노광부의 용해 속도 및 감도를 증가시킬 수 있고, 현상 시에 현상 잔여물 없이 고해상도로 패터닝할 수 있는 역할을 한다.The photosensitive resin composition for the display device insulating layer may further include a phenol compound. The phenolic compound may increase the dissolution rate and sensitivity of the exposed portion during development with an aqueous alkali solution to form a pattern with the photosensitive resin composition, and may serve as a high resolution pattern without developing residues during development.
상기 페놀 화합물의 예로는 하기 화학식 10 내지 화학식 16으로 표시되는 화합물을 들 수 있으나, 이에 한정되는 것은 아니다.Examples of the phenolic compound include compounds represented by the following Chemical Formulas 10 to 16, but are not limited thereto.
[화학식 10][Formula 10]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-111
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-111
상기 화학식 10에서,In Chemical Formula 10,
R82 내지 R87은 각각 독립적으로 수소, 히드록시기(OH), C1 내지 C8의 치환 또는 비치환된 알킬기, C1 내지 C8의 알콕시알킬 또는 -OCO-R88이고, R88은 C1 내지 C8의 치환 또는 비치환된 알킬기이고, R82 내지 R87 중 적어도 하나는 히드록시기이며, 모두 히드록시기는 아니다. R 82 to R 87 are each independently hydrogen, a hydroxy group (OH), a substituted or unsubstituted alkyl group of C1 to C8, alkoxyalkyl of C1 to C8 or -OCO-R 88 , and R 88 is a substitution of C1 to C8 or An unsubstituted alkyl group, at least one of R 82 to R 87 is a hydroxy group, and not all are hydroxy groups.
[화학식 11][Formula 11]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-115
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-115
상기 화학식 11에서, In Chemical Formula 11,
R99 내지 R101은 각각 독립적으로 수소, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, R102 내지 R106은 각각 독립적으로 H, OH, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, 구체적으로는 상기 알킬기는 CH3일 수 있고, n68은 1 내지 5의 정수이다.R 99 to R 101 are each independently hydrogen or a substituted or unsubstituted alkyl group of C1 to C8, and R 102 to R 106 are each independently H, OH, or a substituted or unsubstituted alkyl group of C1 to C8, Specifically, the alkyl group may be CH 3 , and n68 is an integer of 1 to 5.
[화학식 12][Formula 12]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-119
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-119
상기 화학식 12에서,In Chemical Formula 12,
R107 내지 R112는 각각 독립적으로 H, OH, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, A3은 CR205R206 또는 단일결합이고, 상기 R205 및 R206은 각각 독립적으로 수소, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, 구체적으로는 상기 알킬기는 CH3일 수 있고, n69+n70+n71 및 n72+n73+n74는 각각 독립적으로 5 이하의 정수이다.R 107 to R 112 are each independently H, OH, or a substituted or unsubstituted alkyl group of C1 to C8, A 3 is CR 205 R 206 or a single bond, and R 205 and R 206 are each independently hydrogen, Or a substituted or unsubstituted alkyl group of C1 to C8, specifically, the alkyl group may be CH 3 , and n69 + n70 + n71 and n72 + n73 + n74 are each independently an integer of 5 or less.
[화학식 13][Formula 13]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-123
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-123
상기 화학식 13에서, In Chemical Formula 13,
R113 내지 R115는 각각 독립적으로 수소, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, n75, n76 및 n79는 각각 독립적으로 1 내지 5의 정수이고, n77 및 n78은 각각 독립적으로 0 내지 4의 정수이다.R 113 to R 115 are each independently hydrogen or a substituted or unsubstituted alkyl group of C1 to C8, n75, n76 and n79 are each independently an integer of 1 to 5, n77 and n78 are each independently 0 to 4 Is an integer.
[화학식 14][Formula 14]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-127
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-127
상기 화학식 14에서,In Chemical Formula 14,
R116 내지 R121은 각각 독립적으로 수소, OH, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, n80 내지 n83은 각각 독립적으로 1 내지 4의 정수이다.  단, n80+n82 및 n81+n83은 각각 독립적으로 5 이하의 정수이다.R 116 to R 121 are each independently hydrogen, OH, or a substituted or unsubstituted alkyl group of C1 to C8, and n80 to n83 are each independently an integer of 1 to 4; However, n80 + n82 and n81 + n83 are each independently an integer of 5 or less.
[화학식 15][Formula 15]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-131
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-131
상기 화학식 15에서,In Chemical Formula 15,
R122는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, 구체적으로는 CH3일 수 있고, R123 내지 R125는 각각 독립적으로 수소, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, n84, n86 및 n88은 각각 독립적으로 1 내지 5의 정수이고, n85, n87 및 n89는 각각 독립적으로 0 내지 4의 정수이다.  단, n84+n85, n86+n87 및 n88+n89는 각각 독립적으로 5 이하의 정수이다.R 122 is a C1 to C8 substituted or unsubstituted alkyl group, specifically, CH 3 , and R 123 to R 125 are each independently hydrogen or a C1 to C8 substituted or unsubstituted alkyl group, n84, n86 and n88 are each independently an integer of 1 to 5, and n85, n87 and n89 are each independently an integer of 0 to 4; Provided that n84 + n85, n86 + n87 and n88 + n89 are each independently an integer of 5 or less.
[화학식 16][Formula 16]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-135
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-135
상기 화학식 16에서,In Chemical Formula 16,
R126 내지 R128은 각각 독립적으로 C1 내지 C8의 치환 또는 비치환된 알킬기이고, 구체적으로는 CH3일 수 있고, R129 내지 R132는 각각 독립적으로 수소, 또는 C1 내지 C8의 치환 또는 비치환된 알킬기이고, n90, n92 및 n94는 각각 독립적으로 1 내지 5의 정수이고, n91, n93 및 n95는 각각 독립적으로 0 내지 4의 정수이고, n96은 1 내지 4의 정수이다.  단, n90+n91, n92+n93 및 n94+n95는 각각 독립적으로 5 이하의 정수이다.R 126 to R 128 are each independently a substituted or unsubstituted alkyl group of C1 to C8, specifically, may be CH 3 , and R 129 to R 132 are each independently hydrogen or a substituted or unsubstituted of C1 to C8 N90, n92 and n94 are each independently an integer of 1 to 5, n91, n93 and n95 are each independently an integer of 0 to 4, and n96 is an integer of 1 to 4; However, n90 + n91, n92 + n93, and n94 + n95 are each independently an integer of 5 or less.
상기 페놀 화합물의 구체적인 예로는 2,6-디메톡시메틸-4-t-부틸페놀, 2,6-디메톡시메틸-p-크레졸, 2,6-디아세톡시메틸-p-크레졸 등을 들 수 있으나, 이에 한정되는 것은 아니다.Specific examples of the phenol compound include 2,6-dimethoxymethyl-4-t-butylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diacetoxymethyl-p-cresol, and the like. However, the present invention is not limited thereto.
상기 페놀 화합물의 사용량은 상기 알칼리 가용성 수지 100 중량부에 대하여 1 내지 40 중량부일 수 있다. 페놀 화합물의 함량이 상기 범위내인 경우 현상시 감도 저하를 유발하지 않고, 비노광부의 용해 속도를 적당하게 증가시켜 양호한 패턴을 얻을 수 있으며, 또한 냉동보관시 석출이 일어나지 않아 우수한 보관안정성을 나타낼 수 있다.The amount of the phenol compound used may be 1 to 40 parts by weight based on 100 parts by weight of the alkali-soluble resin. When the content of the phenolic compound is in the above range, it does not cause a decrease in sensitivity during development, and can appropriately increase the dissolution rate of the non-exposed part to obtain a good pattern, and also exhibit excellent storage stability because precipitation does not occur during freezing storage. have.
(F) 기타 첨가제(F) other additives
일 구현예에 따른 표시장치 절연막용 감광성 수지 조성물은 기타 첨가제를 더 포함할 수 있다. The photosensitive resin composition for a display device insulating film according to an embodiment may further include other additives.
상기 표시장치 절연막용 감광성 수지 조성물은 코팅 시 얼룩이나 반점 방지, 레벨링 특성, 또는 미현상에 의한 잔사의 생성을 방지하기 위하여, 말론산; 3-아미노-1,2-프로판디올; 비닐기 또는 (메타)아크릴옥시기를 갖는 실란계 커플링제; 등의 첨가제를 포함할 수 있다.  이들 첨가제의 사용량은 원하는 물성에 따라 용이하게 조절될 수 있다.  상기 실란계 커플링제는 표시장치 절연막용 감광성 수지 조성물과 기판과의 밀착력을 향상시킬 수 있다.  상기 실란 커플링제의 예로는 하기 화학식 17 내지 19로 표시되는 화합물; 비닐트리메톡시실란, 비닐트리에톡시실란, 비닐트리클로로실란, 비닐트리스(β-메톡시에톡시)실란; 또는 2-(3,4 에폭시시크로헥실)-에틸트리메톡시실란, 3-메타크릴옥시프로필트리메톡시실란, 3-아크릴옥시프로필트리메톡시실란, p-스티릴트리메톡시실란, 3-메타크릴옥시프로필메틸디메톡시실란, 3-메타크릴옥시프로필메틸디에톡시실란; 트리메톡시[3-(페닐아미노)프로필]실란 등의 탄소-탄소 불포화 결합 함유 실란 화합물을 들 수 있으나, 이에 한정되는 것은 아니다.The photosensitive resin composition for a display device insulating film may be selected from the group consisting of malonic acid in order to prevent stains and spots during coating, leveling characteristics, or generation of residues due to undevelopment; 3-amino-1,2-propanediol; Silane coupling agents having a vinyl group or a (meth) acryloxy group; And additives such as these. The amount of these additives to be used can be easily adjusted according to the desired physical properties. The silane coupling agent may improve the adhesion between the photosensitive resin composition for a display device insulating film and the substrate. Examples of the silane coupling agent include compounds represented by the following Chemical Formulas 17 to 19; Vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrichlorosilane, vinyltris (β-methoxyethoxy) silane; Or 2- (3,4 epoxycyclohexyl) -ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryltrimethoxysilane, 3 -Methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane; Carbon-carbon unsaturated bond containing silane compounds, such as trimethoxy [3- (phenylamino) propyl] silane, are mentioned, but it is not limited to these.
[화학식 17][Formula 17]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-144
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-144
상기 화학식 17에서, R20는 비닐기, 치환 또는 비치환된 알킬기, 또는 치환 또는 비치환된 아릴기이고, 구체적으로는 3-(메타)크릴옥시프로필, p-스티릴 또는 3-(페닐아미노)프로필일 수 있다.In Formula 17, R 20 is a vinyl group, a substituted or unsubstituted alkyl group, or a substituted or unsubstituted aryl group, specifically 3- (meth) acryloxypropyl, p-styryl or 3- (phenylamino Profile).
상기 화학식 17에서, R21 내지 R23는 각각 독립적으로 치환 또는 비치환된 알콕시기, 치환 또는 비치환된 알킬기, 또는 할로겐이고, 이때 R21 내지 R23 중 적어도 하나는 알콕시기 또는 할로겐이고, 구체적으로는 상기 알콕시기는 C1 내지 C8 알콕시기일 수 있고, 상기 알킬기는 C1 내지 C20 알킬기일 수 있다. In Formula 17, R 21 to R 23 are each independently a substituted or unsubstituted alkoxy group, a substituted or unsubstituted alkyl group, or a halogen, wherein at least one of R 21 to R 23 is an alkoxy group or a halogen, specifically As the alkoxy group may be a C1 to C8 alkoxy group, the alkyl group may be a C1 to C20 alkyl group.
[화학식 18][Formula 18]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-148
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-148
상기 화학식 18에서, R24은 -NH2 또는 -CH3CONH이고, R25 내지 R27은 각각 독립적으로 치환 또는 비치환된 C1 내지 C20 알콕시기이고, 구체적으로는 상기 알콕시기는 OCH3 또는 OCH2CH3일 수 있고, n34는 1 내지 5의 정수일 수 있다. In Formula 18, R 24 is -NH 2 or -CH 3 CONH, R 25 to R 27 are each independently a substituted or unsubstituted C1 to C20 alkoxy group, specifically the alkoxy group is OCH 3 or OCH 2 CH 3 and n34 may be an integer from 1 to 5.
[화학식 19][Formula 19]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-151
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-151
상기 화학식 19에서, R28 내지 R31은 각각 독립적으로 치환 또는 비치환된 C1 내지 C20 알킬기, 또는 치환 또는 비치환된 C1 내지 C20 알콕시기이고, 구체적으로는 CH3 또는 OCH3 일 수 있다. In Formula 19, R 28 to R 31 are each independently a substituted or unsubstituted C1 to C20 alkyl group, or a substituted or unsubstituted C1 to C20 alkoxy group, and specifically, may be CH 3 or OCH 3 .
상기 화학식 19에서, R32 및 R33는 각각 독립적으로 치환 또는 비치환된 아미노기일 수 있고, 구체적으로는 NH2 또는 CH3CONH일 수 있다.  또한 n35 및 n36은 각각 1 내지 5의 정수일 수 있다. In Formula 19, R 32 and R 33 may each independently be a substituted or unsubstituted amino group, and specifically NH 2 or CH 3 CONH. In addition, n35 and n36 may be an integer of 1 to 5, respectively.
상기 실란계 커플링제는 상기 알칼리 가용성 수지 100 중량부에 대하여 0.1 내지 30 중량부로 사용될 수 있고, 구체적으로는 1 내지 7 중량부로 사용될 수 있다. 상기 범위 내로 사용될 경우 상하부 막 층과의 접착력이 우수하며, 현상 후 잔막이 남지 않고, 투과율과 같은 광특성뿐 아니라 인장강도, 신율 등과 같은 막의 기계적 물성을 향상시킬 수 있다.The silane coupling agent may be used in an amount of 0.1 to 30 parts by weight based on 100 parts by weight of the alkali-soluble resin, and specifically 1 to 7 parts by weight. When used within the above range, the adhesion to the upper and lower membrane layers is excellent, and no residual film is left after development, and optical properties such as transmittance, as well as mechanical properties of the membrane such as tensile strength and elongation can be improved.
또한 상기 표시장치 절연막용 감광성 수지 조성물은 밀착력 등의 향상을 위해 첨가제로서 에폭시 화합물을 더 포함할 수 있다.  상기 에폭시 화합물로는 에폭시 노볼락 아크릴 카르복실레이트 수지, 오르토 크레졸 노볼락 에폭시 수지, 페놀 노볼락 에폭시 수지, 테트라메틸 비페닐 에폭시 수지, 비스페놀 A형 에폭시 수지, 지환족 에폭시 수지 또는 이들의 조합을 사용할 수 있다.In addition, the photosensitive resin composition for a display device insulating film may further include an epoxy compound as an additive to improve adhesion and the like. As the epoxy compound, an epoxy novolac acrylic carboxylate resin, an ortho cresol novolac epoxy resin, a phenol novolac epoxy resin, a tetramethyl biphenyl epoxy resin, a bisphenol A type epoxy resin, an alicyclic epoxy resin or a combination thereof may be used. Can be.
상기 에폭시 화합물을 더 포함하는 경우 과산화물 개시제 또는 아조비스계 개시제와 같은 라디칼 중합 개시제를 더 포함할 수도 있다.When the epoxy compound is further included, a radical polymerization initiator such as a peroxide initiator or an azobis-based initiator may be further included.
상기 에폭시 화합물은 상기 표시장치 절연막용 감광성 수지 조성물 100 중량부에 대하여 0.01 내지 5 중량부로 사용될 수 있다.  상기 에폭시 화합물이 상기 범위 내로 포함되는 경우 저장성 및 경제적으로 밀착력 및 기타 특성을 향상시킬 수 있다.The epoxy compound may be used in an amount of 0.01 to 5 parts by weight based on 100 parts by weight of the photosensitive resin composition for the display device insulating film. When the epoxy compound is included in the above range it is possible to improve the adhesion and other properties in storage and economical.
상기 표시장치 절연막용 감광성 수지 조성물의 제조 방법은 특별히 한정되지는 않으나, 구체적으로는 전술한 염료, 아크릴계 바인더 수지, 광중합 개시제, 광중합성 단량체, 용매 및 선택적으로 첨가제를 혼합하여 표시장치 절연막용 감광성 수지 조성물을 제조할 수 있다.The method of manufacturing the photosensitive resin composition for the display device insulating film is not particularly limited, but specifically, the above-described dye, acrylic binder resin, photopolymerization initiator, photopolymerizable monomer, solvent, and additives may be optionally mixed to mix the photosensitive resin for display device insulating film. The composition can be prepared.
기타 첨가제로는 열잠재 산발생제를 들 수 있다.  상기 열잠재 산발생제의 예로는 p-톨루엔술폰산, 벤젠술폰산 등과 같은 아릴술폰산; 트리플루오로메탄술폰산, 트리플루오로부탄술폰산 등과 같은 퍼플루오로알킬술폰산; 메탄술폰산, 에탄술폰산, 부탄술폰산 등과 같은 알킬술폰산; 또는 이들의 조합을 들 수 있으나, 이에 한정되는 것은 아니다.Other additives include heat latent acid generators. Examples of the heat latent acid generator include arylsulfonic acids such as p-toluenesulfonic acid and benzenesulfonic acid; Perfluoroalkylsulfonic acids such as trifluoromethanesulfonic acid, trifluorobutanesulfonic acid and the like; Alkyl sulfonic acids such as methanesulfonic acid, ethanesulfonic acid, butanesulfonic acid and the like; Or combinations thereof, but is not limited thereto.
상기 열잠재 산발생제는 폴리벤조옥사졸 전구체의 페놀성 수산기 함유 폴리아미드의 탈수화 반응과, 고리화 반응을 위한 촉매로써 경화온도를 낮추어도 고리화 반응을 원활히 진행할 수 있다. The heat latent acid generator can smoothly proceed the cyclization reaction even if the curing temperature is lowered as a catalyst for the dehydration reaction of the phenolic hydroxyl group-containing polyamide of the polybenzoxazole precursor and the cyclization reaction.
또한 막두께의 얼룩을 막거나, 현상성을 향상시키기 위해 적당한 계면활성제 또는 레벨링제를 첨가제로 더욱 사용할 수도 있다.In addition, suitable surfactants or leveling agents may be further used as additives in order to prevent staining of the film thickness or to improve developability.
다른 일 구현예에 따르면, 상기 표시장치 절연막용 감광성 수지 조성물을 이용하여 제조된 표시장치 절연막을 제공한다.According to another embodiment, a display device insulating film manufactured using the photosensitive resin composition for the display device insulating film is provided.
상기 표시장치 절연막은 하기와 같은 방법에 의해 제조될 수 있다.  상기 제조된 감광성 수지 조성물을 스프레이법, 롤코터법, 회전도포법 등으로 기판 표면에 도포한 후, 프리 베이크(pre-bake)로 용매를 제거하여 도포막을 형성한다.  상기 프리 베이크는 70 내지 150℃에서 1 내지 5 분간 실시하는 것이 바람직하다.  이 후, 미리 준비된 패턴에 따라 가시광선, 자외선, 원자외선, 전자선, 원자외선, 전자선, 엑스선 등을 상기 형성된 도포막에 조사하고, 현상액으로 현상하여 불필요한 부분을 제거함으로써 소정의 패턴을 형성한다.  이때, 사용되는 현상액으로는 알칼리 수용액이 사용될 수 있으며, 구체적으로는 수산화 나트륨, 수산화 칼륨, 탄산 나트륨 등의 무기 알칼리류; 에틸아민, n-프로필아민 등의 1급 아민류; 디에틸아민, n-프로필아민 등의 2급 아민류; 트리메틸아민, 메틸디에틸아민, 디메틸에틸아민, 트리에틸아민 등의 3급 아민류; 디메틸에탄올아민, 메틸디에탄올아민, 트리에탄올아민 등의 알콜아민류; 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드 등의 4급 암모늄염의 수용액; 및 이들의 혼합물로 이루어진 군에서 선택되는 것을 사용할 수 있다.  상기 현상액의 알칼리성 화합물의 농도는 0.1 내지 10%인 것이 바람직하다.  또한, 상기 용매와 함께, 메탄올 에탄올 등과 같은 수용성 유기 용매 또는 계면 활성제를 적정량 첨가하여 사용할 수도 있다.  또한, 상기와 같은 현상액으로 현상한 후 초순수로 30 내지 140초 동안 세정하여, 불필요한 부분을 제거하고 건조하여 패턴을 형성할 수 있으며, 형성된 패턴에 자외선 등의 빛을 조사한 후, 패턴을 오븐 등의 가열장치에 의해 110 내지 300℃에서 30 내지 120분간 가열하여 최종 패턴을 얻을 수 있다. The display device insulating film may be manufactured by the following method. After applying the prepared photosensitive resin composition to the surface of the substrate by a spray method, a roll coater method, a rotary coating method, etc., the solvent is removed by pre-baking to form a coating film. It is preferable to perform the said prebaking for 1 to 5 minutes at 70-150 degreeC. Thereafter, visible light, ultraviolet rays, far ultraviolet rays, electron beams, far-ultraviolet rays, electron beams, X-rays, and the like are irradiated to the formed coating film according to a pattern prepared in advance, and developed with a developer to remove an unnecessary portion to form a predetermined pattern. At this time, an aqueous alkali solution may be used as the developing solution, specifically, inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate; Primary amines such as ethylamine and n-propylamine; Secondary amines such as diethylamine and n-propylamine; Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; Alcohol amines such as dimethylethanolamine, methyl diethanolamine and triethanolamine; Aqueous solutions of quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; And mixtures thereof. It is preferable that the density | concentration of the alkaline compound of the said developing solution is 0.1 to 10%. In addition, an appropriate amount of a water-soluble organic solvent or a surfactant such as methanol ethanol may be added together with the solvent. In addition, after developing with the developer as described above, it is washed with ultrapure water for 30 to 140 seconds to remove unnecessary parts and dried to form a pattern, and after irradiating the formed pattern with light such as ultraviolet rays, the pattern is The final pattern may be obtained by heating at 110 to 300 ° C. for 30 to 120 minutes by a heating apparatus.
본 발명의 또 다른 일 구현예에서는 상기 절연막을 포함하는 표시장치를 제공한다.  상기 표시장치는 구체적으로 액정 디스플레이, 발광다이오드, 플라즈마디스플레이, 또는 유기발광다이오드일 수 있다.In another embodiment of the present invention, a display device including the insulating layer is provided. Specifically, the display device may be a liquid crystal display, a light emitting diode, a plasma display, or an organic light emitting diode.
이하에서 본 발명을 실시예 및 비교예를 통하여 보다 상세하게 설명하고자 하나, 하기의 실시예 및 비교예는 설명의 목적을 위한 것으로 본 발명을 제한하고자 하는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the following Examples and Comparative Examples are for illustrative purposes only and are not intended to limit the present invention.
(폴리벤조옥사졸 전구체 제조)(Production of polybenzoxazole precursor)
합성예 1 : 폴리벤조옥사졸 전구체(PBO-1)의 제조Synthesis Example 1 Preparation of Polybenzoxazole Precursor (PBO-1)
교반기, 온도조절장치, 질소가스주입 장치 및 냉각기가 장착된 4구 플라스크에 질소를 통과시키면서 2,2-비스(3-(아미노-4-히드록시페닐)-1,1,1,3,3,3-헥사플루오로프로판 12.4g을 N-메틸-2-피롤리돈(NMP) 125g에 넣어 용해시켰다. 고체가 완전 용해되면 피리딘을 4.2g을 상기 용액에 투입하고, 온도를 0 내지 5℃로 유지하면서 4,4'-옥시디벤조일클로라이드 9.4g을 N-메틸-2-피롤리돈(NMP) 100g에 넣어 용해시킨 용액을 30분간 천천히 적하하였다.  적하후 1시간 동안 0 내지 5℃에서 반응을 수행하고, 상온으로 온도를 올려 1시간 동안 교반하여 반응을 종료하였다.2,2-bis (3- (amino-4-hydroxyphenyl) -1,1,1,3,3 while passing nitrogen through a four-necked flask equipped with a stirrer, a thermostat, a nitrogen gas injection device and a cooler 12.4 g of, 3-hexafluoropropane was dissolved in 125 g of N-methyl-2-pyrrolidone (NMP) When the solid was completely dissolved, 4.2 g of pyridine was added to the solution, and the temperature was 0 to 5 ° C. 9.4 g of 4,4'-oxydibenzoyl chloride was added dropwise to 100 g of N-methyl-2-pyrrolidone (NMP) while maintaining the solution, and the solution was slowly added dropwise for 30 minutes. The reaction was carried out, and the reaction was terminated by raising the temperature to room temperature and stirring for 1 hour.
여기에, 5-노보넨-2,3-디카르복시언하이드라이드를 1.1g을 투입하고 70℃에서 24시간 교반하여 반응을 종료하였다.  반응혼합물을 물에 투입하여 침전물을 생성하고, 침전물을 여과하여 물로 충분히 세정한 후. 온도 80℃, 진공 하에서 24시간 이상 건조하여 폴리벤조옥사졸 전구체(PBO-1)를 제조하였다.  1.1 g of 5-norbornene-2,3-dicarboxylic hydride was added to this, and it stirred at 70 degreeC for 24 hours, and reaction was complete | finished. The reaction mixture was poured into water to form a precipitate, and the precipitate was filtered and thoroughly washed with water. The polybenzoxazole precursor (PBO-1) was prepared by drying at a temperature of 80 ° C. under vacuum for at least 24 hours.
합성예 2 : 폴리벤조옥사졸 전구체(PBO-2)의 제조Synthesis Example 2 Preparation of Polybenzoxazole Precursor (PBO-2)
5-노보넨-2,3-디카르복시언하이드라이드 대신 말레익언하이드라이드를 사용한 것을 제외하고는, 합성예 1과 동일한 방법으로 폴리벤조옥사졸 전구체(PBO-2)를 제조하였다.Polybenzoxazole precursor (PBO-2) was prepared in the same manner as in Synthesis Example 1, except that maleic hydride was used instead of 5-norbornene-2,3-dicarboxylic hydride.
이하, 실시예에 사용된 성분의 사양은 다음과 같다.Hereinafter, the specifications of the components used in the examples are as follows.
(A) 알칼리 가용성 수지(A) alkali-soluble resin
(A-1) 상기 합성예 1에서 제조된 폴리벤조옥사졸 전구체를 사용하였다.(A-1) The polybenzoxazole precursor prepared in Synthesis Example 1 was used.
(A-2) 상기 합성예 2에서 제조된 폴리벤조옥사졸 전구체를 사용하였다.(A-2) The polybenzoxazole precursor prepared in Synthesis Example 2 was used.
(B) 감광성 디아조퀴논 화합물(B) photosensitive diazoquinone compound
하기 화학식 20으로 표시되는 감광성 디아조퀴논을 사용하였다.A photosensitive diazoquinone represented by the following Formula 20 was used.
[화학식 20][Formula 20]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-180
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-180
상기 화학식 20에서, Q 중 둘은 하기 화학식 21로 치환되어 있고, 나머지 하나는 수소이다.In Formula 20, two of Q is substituted with Formula 21, and the other is hydrogen.
[화학식 21][Formula 21]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-183
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-183
(C) 실록산 함유 입자(C) siloxane-containing particles
(C-1) 비표면적이 150±25m2/g인 실록산 함유 입자(R805, Aerosil社)를 사용하였다.A siloxane-containing particle (R805, Aerosil) having a specific surface area of (C-1) 150 ± 25 m 2 / g was used.
(C-2) 비표면적이 260±30m2/g인 실록산 함유 입자(R812, Aerosil社)를 사용하였다.(C-2) A siloxane-containing particle (R812, Aerosil) having a specific surface area of 260 ± 30 m 2 / g was used.
(C-3) 비표면적이 190±20m2/g인 실록산 함유 입자(R816, Aerosil社)를 사용하였다.(C-3) A siloxane-containing particle (R816, Aerosil) having a specific surface area of 190 ± 20m 2 / g was used.
(C-4) 비표면적이 200±15m2/g인 실록산 함유 입자(R200, Aerosil社)를 사용하였다.(C-4) A siloxane-containing particle (R200, Aerosil) having a specific surface area of 200 ± 15 m 2 / g was used.
(C-5) 비표면적이 50±15m2/g인 실록산 함유 입자(OX50, Aerosil社)를 사용하였다.(C-5) A siloxane-containing particle (OX50, Aerosil) having a specific surface area of 50 ± 15 m 2 / g was used.
(D) 용매(D) solvent
γ-부티로락톤을 사용하였다.γ-butyrolactone was used.
(E) 페놀 화합물(E) phenolic compounds
하기 화학식 22로 표시되는 페놀 화합물을 사용하였다.The phenolic compound represented by following formula (22) was used.
[화학식 22][Formula 22]
[규칙 제91조에 의한 정정 11.07.2013] 
Figure WO-DOC-FIGURE-195
[Correction under Rule 91 11.07.2013]
Figure WO-DOC-FIGURE-195
실시예 1 내지 5 및 비교예 1과 비교예 2Examples 1 to 5 and Comparative Example 1 and Comparative Example 2
하기 표 1의 조성으로 각 성분을 혼합하여 포지티브형 감광성 수지 조성물을 제조하였다.  구체적으로, 알칼리 가용성 수지(A)를 용매(D)에 녹인 후 감광성 디아조퀴논 화합물(B)과 페놀 화합물(E)을 투입하여 용해하였다.  그 후, 실록산 함유 입자를 상기 혼합물에 투입하여 1시간 동안 실온에서 교반하여 안정화 한 후 0.45㎛의 플루오르수지 필터로 여과하여 포지티브형 감광성 수지 조성물을 제조하였다.Each component was mixed with the composition of Table 1 below to prepare a positive photosensitive resin composition. Specifically, the alkali-soluble resin (A) was dissolved in the solvent (D) and then dissolved by adding a photosensitive diazoquinone compound (B) and a phenol compound (E). Thereafter, the siloxane-containing particles were added to the mixture, stirred for 1 hour at room temperature, stabilized, and filtered through a 0.45 µm fluororesin filter to prepare a positive photosensitive resin composition.
표 1 (중량부)
    실시예 1 실시예 2 실시예 3 실시예 4 실시예 5 비교예 1 비교예 2
(A)알칼리 가용성 수지 (A-1) 100 100 100 100 - 100 100
(A-2) - - - - 100 - -
(B) 감광성 디아조퀴논 화합물 30 30 30 30 30 30 30
(C)실록산 함유 입자 (C-1) 5 - - - 5 - -
(C-2) - 5 - - - - -
(C-3) - - 5 - - - -
(C-4) - - - 5 - - -
(C-5) - - - - - - 5
(D) 용매 350 350 350 350 350 350 350
(E) 페놀 화합물 20 20 20 20 20 20 20
Table 1 (Parts by weight)
Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2
(A) alkali-soluble resin (A-1) 100 100 100 100 - 100 100
(A-2) - - - - 100 - -
(B) photosensitive diazoquinone compound 30 30 30 30 30 30 30
(C) siloxane-containing particles (C-1) 5 - - - 5 - -
(C-2) - 5 - - - - -
(C-3) - - 5 - - - -
(C-4) - - - 5 - - -
(C-5) - - - - - - 5
(D) solvent 350 350 350 350 350 350 350
(E) phenolic compounds 20 20 20 20 20 20 20
상기 표 1에서 상기 (B) 내지 (E)의 함량 단위는 상기 (A) 100 중량부에 대해 첨가된 중량부이다.In Table 1, the content units of (B) to (E) are parts by weight added based on 100 parts by weight of (A).
패턴막의 제조Production of pattern film
상기 실시예 1 내지 5, 그리고 비교예 1 및 2에서 제조된 포지티브형 감광성 수지 조성물을 스핀코터를 이용해 ITO 유리에 도포한 뒤, 120℃로 100초간 핫플레이트 상에서 가열하여 감광성 폴리이미드 전구체 도막을 형성하였다.  상기 폴리이미드 전구체 도막에 다양한 크기의 패턴이 새겨진 패턴 마스크를 사용하여 노광장치(I-line stepper, 니콘社, NSR i10C)로 노광한 후, 상온에서 2.38%의 테트라메틸암모늄 하이드록사이드 수용액에 23℃로 60초간 세척하였다.  이어서, 얻어진 패턴을 전기로를 이용하여 산소 농도 1000ppm 이하에서 250℃, 40분 동안 경화시켜 패턴막을 얻었다.The positive photosensitive resin compositions prepared in Examples 1 to 5 and Comparative Examples 1 and 2 were applied to ITO glass using a spin coater, and then heated to 120 ° C. on a hot plate for 100 seconds to form a photosensitive polyimide precursor coating film. It was. After exposure using an exposure apparatus (I-line stepper, Nikon Co., NSR i10C) using a pattern mask engraved with a pattern of various sizes on the polyimide precursor coating film, 23% in an aqueous solution of tetramethylammonium hydroxide at room temperature of 2.38% Washed for 60 seconds. Subsequently, the obtained pattern was cured at 250 ° C. for 40 minutes at an oxygen concentration of 1000 ppm or less using an electric furnace to obtain a pattern film.
평가예Evaluation example
상기 제조된 패턴막에 대하여 하기와 같은 방법으로 잔막률, 감도, 내열성, 잔사, 유전율, 코팅성 및 투명성을 평가하고 그 결과를 하기 표 2에 나타내었다.Regarding the prepared pattern film, a residual film rate, sensitivity, heat resistance, residue, dielectric constant, coating property, and transparency were evaluated in the following manner, and the results are shown in Table 2 below.
(1) 잔막률 측정(1) residual film rate measurement
예비소성을 한 필름을 2.38% 테트라메틸암모늄하이드록사이드(TMAH) 수용액에 23℃/60초 동안 현상하고 초순수로 60초 동안 세정 후 건조하고 알파스텝(Tencor社)을 이용하여 막두께 변화를 측정하였고, 하기의 계산식 1로 산출하였다.The prefired film was developed in a 2.38% tetramethylammonium hydroxide (TMAH) aqueous solution for 23 ° C./60 seconds, washed with ultrapure water for 60 seconds, dried, and measured for change in film thickness using Alpha Step (Tencor). And it calculated by the following formula 1.
[계산식 1][Calculation 1]
잔막율 = (현상 후 막두께/현상 전 초기 막두께)×100  Residual film ratio = (film thickness after development / initial film thickness before development) × 100
(○: 잔막율 90% 이상으로 우수함, △: 80~90%으로 보통 수준, X: 80% 이하로 잔막율 낮음)(○: excellent residual film ratio of 90% or more, △: moderate level of 80-90%, X: low residual film ratio of 80% or less)
(2) 감도 측정(2) sensitivity measurement
노광 및 현상후 10㎛ L/S 패턴이 1 대 1의 선폭으로 형성되는 노광시간을 구하여 이를 최적 노광 시간으로 하였다.  해상도는 상기 최적 노광 시간에 있어서의 최소의 패턴 치수를 해상도로 하여 측정하였다. After exposure and development, an exposure time for which a 10 µm L / S pattern was formed with a line width of 1 to 1 was obtained and this was taken as the optimum exposure time. The resolution was measured by making the minimum pattern dimension in the said optimal exposure time into the resolution.
(○: 100mJ/㎠ 이하로 감도 우수, △: 100~200mJ/㎠로 감도 보통, X: 200mJ/㎠ 이상으로 감도 낮음)(○: excellent sensitivity at 100 mJ / cm 2 or less, △: sensitive sensitivity at 100 to 200 mJ / cm 2, and X: low sensitivity at 200 mJ / cm 2 or more)
(3) 잔사 평가(3) residue evaluation
상기 제조된 감광성 수지 조성물을 이용하여 형성된 패턴의 잔사 수준을 광학현미경 및 CD-SEM으로 확인하였다. The residue level of the pattern formed using the photosensitive resin composition prepared above was confirmed by an optical microscope and CD-SEM.
(○: 잔사 깨끗한 수준, △: 잔사 미약하게 남은 수준, X:  잔사에 취약한 수준)(○: level of residue clean, △: level of residual residue, X: level vulnerable to residual residue)
(4-1) 내열성 평가: 유리전이온도(Tg) 측정(4-1) Heat resistance evaluation: glass transition temperature (Tg) measurement
상기 제조된 감광성 수지 조성물을 이용하여 형성한 감광성 수지막이 코팅된 웨이퍼를 2% 불산(HF) 수용액에 침지하여 수지막을 손상 없이 분리하였다.  분리된 각각의 수지막의 TMA(thermo-mechanical analyzer) 분석을 통하여 유리전이온도를 측정하였다.The photosensitive resin film-coated wafer formed by using the prepared photosensitive resin composition was immersed in a 2% hydrofluoric acid (HF) aqueous solution to separate the resin film without damage. The glass transition temperature was measured by TMA (thermo-mechanical analyzer) analysis of each of the separated resin films.
(○: Tg 280℃ 이상으로 내열성 우수, △: Tg 230~280℃로 내열성 보통, X:  Tg 330℃ 이하로 내열성 낮음)(○: excellent heat resistance at Tg 280 ° C or higher, △: normal heat resistance at Tg 230 to 280 ° C, X: low heat resistance at Tg 330 ° C or lower)
(4-2) 내열성 평가: 5% 중량 감소 온도(Td) 측정(4-2) Heat resistance evaluation: 5% weight loss temperature (Td) measurement
상기 제조된 감광성 수지 조성물을 이용하여 형성한 감광성 수지막이 코팅된 웨이퍼를 2% 불산(HF) 수용액에 침지하여 수지막을 손상 없이 분리하였다.  분리된 각각의 수지막의 TGA(thermogravimetric analyzer) 분석을 통하여 5% 중량 감소 온도를측정하였다.The photosensitive resin film-coated wafer formed by using the prepared photosensitive resin composition was immersed in a 2% hydrofluoric acid (HF) aqueous solution to separate the resin film without damage. The 5% weight loss temperature was measured by TGA (thermogravimetric analyzer) analysis of each resin film separated.
(○: Td 380℃ 이상으로 내열성 우수, △: Td 330~380℃로 내열성 보통, X:  Td 330℃ 이하로 내열성 낮음)(○: excellent heat resistance at Td 380 ° C or higher, △: normal heat resistance at Td 330-380 ° C, X: low heat resistance at Td 330 ° C or lower)
(5) 유전율 측정(5) permittivity measurement
상기 제조된 포지티브형 감광성 수지 조성물을 크롬 기판에 도포하고 핫 플레이트(hot plate) 위에서 120℃/100초간 처리하여 최종 두께가 3.0㎛인 코팅막을 형성하였다. 형성된 코팅막을 온도 250℃의 전기로에서 40분간 경화시킨 후 DEA(dielectric analyzer) 장비를 통해 유전율을 확인하였다. The positive photosensitive resin composition prepared above was applied to a chromium substrate and subjected to 120 ° C./100 seconds treatment on a hot plate to form a coating film having a final thickness of 3.0 μm. The formed coating film was cured in an electric furnace at a temperature of 250 ° C. for 40 minutes, and then the dielectric constant was confirmed through a DEA (dielectric analyzer) device.
(○: 유전율 3.0 이하,  X : 유전율 3.0 초과)(○: dielectric constant below 3.0, X: dielectric constant above 3.0)
(6) 코팅성 평가(6) coating evaluation
상기 제조된 포지티브형 감광성 수지 조성물을 스핀 코터를 이용해 ITO 유리에 도포한 후, 핫플레이트 상에서 120℃/100초간 처리하여 코팅된 막의 균일성과 디펙트유무를 광학현미경과 SP1 장비로 확인하였다. The positive photosensitive resin composition prepared above was applied to ITO glass using a spin coater, and then treated on a hot plate at 120 ° C./100 seconds to confirm uniformity and defects of the coated film with an optical microscope and SP1 equipment.
(○: 코팅성 우수한 수준, △: 코팅성 양호/일부 디펙트 존재, X: 코팅성 열악한 수준)(○: excellent coatability, △: good coatability / some defects present, X: poor coatability)
(7) 투명성 평가: Haze meter 측정(7) Transparency evaluation: Haze meter measurement
상기 제조된 포지티브형 감광성 수지 조성물을 스핀 코터를 이용해 쿼츠 기판에 도포한 후, 핫플레이트 상에서 120℃/100초간 처리하여 코팅된 막을 온도 250℃의 전기로에서 40분간 경화시킨 후 haze meter(NDH-2000, DENSHOKU社) 장비를 이용하여 투명성을 확인하였다.The positive photosensitive resin composition prepared above was coated on a quartz substrate using a fin spin coater, and then coated on a hot plate at 120 ° C./100 seconds for curing for 40 minutes in an electric furnace at a temperature of 250 ° C., followed by a haze meter (NDH-2000). , DENSHOKU) equipment to check the transparency.
(○: 투과율 90% 이상으로 우수한 수준, △: 투과율 80~90%로 투명성 보통, X: 투과율 80% 이하로 투명성 낮음)(○: excellent level of transmittance of 90% or more, △: transparency of 80 to 90% of transmittance is moderate, X: transparency of low of transmittance of 80% or less is low)
표 2
구분 잔막율 감도 잔사 내열성 (1) 내열성 (2) 유전율 코팅성 투명성
실시예 1
실시예 2
실시예 3
실시예 4
실시예 5
비교예 1 X X X
비교예 2 X
TABLE 2
division Residual rate Sensitivity Residue Heat Resistance (1) Heat Resistance (2) permittivity Coating Transparency
Example 1
Example 2
Example 3
Example 4
Example 5
Comparative Example 1 X X X
Comparative Example 2 X
상기 평가예를 통하여, 본 발명의 포지티브형 감광성 수지 조성물은 노광부의 현상 속도를 적절하게 조정하여 잔막이 남지 않는 시점의 감도(EOP)를 구현할 수 있음을 확인할 수 있으며, 막단차가 다양한 노광부의 전체 영역에서 잔사가 발생하지 않음을 확인할 수 있었다. Through the above evaluation examples, it can be seen that the positive photosensitive resin composition of the present invention can realize the sensitivity (EOP) at the time when the residual film does not remain by appropriately adjusting the developing speed of the exposed portion, and the overall difference in the film thickness of the exposed portion It was confirmed that no residue occurred in the area.
상기 표 2에 나타난 바와 같이, 비교예 1의 경우 상대적으로 유리전이온도와 5% 중량 감소 온도가 낮아 내열성이 낮은 반면, 실시예 1 내지 5의 경우 비노광부의 잔막율과 감도, 유전율 및 내열성을 우수한 수준으로 유지하면서 노광부의 잔막이 깨끗하게 제거되었다. 비교예 2의 경우 내열과 유전율 측면에서는 다소 우수하지만, 실록산 함유 입자의 작은 비표면적으로 인해, 코팅성과 투명성이 저하되고 감도에 악영향을 주어 현상후 스컴이 남는 문제가 생겼다.As shown in Table 2, in Comparative Example 1, the glass transition temperature and the 5% weight loss temperature are relatively low, whereas the heat resistance is low, whereas in Examples 1 to 5, the residual film rate and sensitivity, dielectric constant, and heat resistance of the non-exposed part are low. The remaining film of the exposed portion was cleanly removed while maintaining the excellent level. Although the comparative example 2 is somewhat superior in terms of heat resistance and dielectric constant, due to the small specific surface area of the siloxane-containing particles, the coating property and transparency are deteriorated and the sensitivity is adversely affected, resulting in a problem of scum after development.
이상을 통해 본 발명의 바람직한 실시예에 대하여 설명하였지만, 본 발명은 이에 한정되는 것이 아니고 특허청구범위와 발명의 상세한 설명의 범위 안에서 여러 가지로 변형하여 실시하는 것이 가능하고 이 또한 본 발명의 범위에 속하는 것은 당연하다.Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention. It is natural to belong.

Claims (8)

  1. (A) 알칼리 가용성 수지;(A) alkali-soluble resins;
    (B) 감광성 디아조퀴논 화합물;(B) photosensitive diazoquinone compound;
    (C) 비표면적이 100 내지 400 m2/g인 실록산 함유 입자; 및(C) siloxane-containing particles having a specific surface area of 100 to 400 m 2 / g; And
    (D) 용매(D) solvent
    를 포함하는 포지티브형 감광성 수지 조성물.Positive photosensitive resin composition comprising a.
  2. 제1항에서,In claim 1,
    상기 실록산 함유 입자(C)는 비표면적이 100 내지 300 m2/g인 포지티브형 감광성 수지 조성물.The siloxane-containing particles (C) is a positive photosensitive resin composition having a specific surface area of 100 to 300 m 2 / g.
  3. 제1항에서,In claim 1,
    상기 알칼리 가용성 수지(A)는 폴리벤조옥사졸 전구체, 폴리아믹산, 폴리이미드 또는 이들의 조합인 포지티브형 감광성 수지 조성물.The said alkali-soluble resin (A) is a positive photosensitive resin composition which is a polybenzoxazole precursor, a polyamic acid, a polyimide, or a combination thereof.
  4. 제1항에서,In claim 1,
    상기 실록산 함유 입자는 하기 화학식 1로 표시되는 것인 포지티브형 감광성 수지 조성물. Positive siloxane-containing particles are represented by the following formula (1).
    [화학식 1][Formula 1]
    RmSi(OR1)4-m R m Si (OR 1 ) 4-m
    (상기 화학식 1에서, R은 수소 원자, 히드록시기, 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알키닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 또는 이들의 조합이고, (In Formula 1, R is a hydrogen atom, a hydroxyl group, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted A C3 to C30 cycloalkyl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C3 to C30 cycloalkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof,
    R1은 치환 또는 비치환된 C1 내지 C30 알킬기, 치환 또는 비치환된 C2 내지 C30 알케닐기, 치환 또는 비치환된 C2 내지 C30 알키닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알킬기, 치환 또는 비치환된 C3 내지 C30 사이클로알케닐기, 치환 또는 비치환된 C3 내지 C30 사이클로알키닐기, 치환 또는 비치환된 C6 내지 C30 아릴기, 또는 이들의 조합이며,R1 is a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted A C3 to C30 cycloalkenyl group, a substituted or unsubstituted C3 to C30 cycloalkynyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof,
    m은 1 내지 3의 정수이다.)m is an integer of 1 to 3.)
  5. 제1항에서,In claim 1,
    상기 포지티브형 감광성 수지 조성물은The positive photosensitive resin composition
    상기 (A) 알칼리 가용성 수지 100 중량부에 대하여Based on 100 parts by weight of the (A) alkali-soluble resin
    상기 (B) 감광성 디아조퀴논 화합물 5 내지 100 중량부;5 to 100 parts by weight of the (B) photosensitive diazoquinone compound;
    상기 (C) 실록산 함유 입자 1 내지 10 중량부; 및1 to 10 parts by weight of the (C) siloxane-containing particles; And
    상기 (D) 용매 100 내지 400 중량부100 to 400 parts by weight of the solvent (D)
    를 포함하는 포지티브형 감광성 수지 조성물.Positive photosensitive resin composition comprising a.
  6. 제1항에서,In claim 1,
    상기 포지티브형 감광성 수지 조성물은 페놀 화합물을 더 포함하는 포지티브형 감광성 수지 조성물.The positive photosensitive resin composition further comprises a phenol compound.
  7. 제1항 내지 제6항 중 어느 한 항의 포지티브형 감광성 수지 조성물을 이용하여 제조된 절연막.The insulating film manufactured using the positive photosensitive resin composition of any one of Claims 1-6.
  8. 제7항에 따른 절연막을 포함하는 표시장치.A display device comprising the insulating film according to claim 7.
PCT/KR2013/003829 2012-12-26 2013-05-03 Photosensitive resin composition for insulation film for display device, and insulation film and display device using same WO2014104491A1 (en)

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