WO2014052012A1 - Assembling thin silicon chips on a contact lens - Google Patents

Assembling thin silicon chips on a contact lens Download PDF

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Publication number
WO2014052012A1
WO2014052012A1 PCT/US2013/059256 US2013059256W WO2014052012A1 WO 2014052012 A1 WO2014052012 A1 WO 2014052012A1 US 2013059256 W US2013059256 W US 2013059256W WO 2014052012 A1 WO2014052012 A1 WO 2014052012A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
lens
contact
substrate
contact pads
Prior art date
Application number
PCT/US2013/059256
Other languages
French (fr)
Inventor
James ETZKORN
Original Assignee
Google Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Google Inc. filed Critical Google Inc.
Priority to KR1020177008009A priority Critical patent/KR102197561B1/en
Priority to JP2015534523A priority patent/JP6121543B2/en
Priority to CN201380061505.2A priority patent/CN104838308B/en
Priority to EP13842053.4A priority patent/EP2901207B1/en
Priority to EP20173904.2A priority patent/EP3742220A1/en
Priority to KR1020157010387A priority patent/KR20150056653A/en
Publication of WO2014052012A1 publication Critical patent/WO2014052012A1/en

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    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61BDIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00Measuring for diagnostic purposes; Identification of persons
    • A61B5/68Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
    • A61B5/6801Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be attached to or worn on the body surface
    • A61B5/6813Specially adapted to be attached to a specific body part
    • A61B5/6814Head
    • A61B5/6821Eye
    • GPHYSICS
    • G02OPTICS
    • G02CSPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C11/00Non-optical adjuncts; Attachment thereof
    • G02C11/10Electronic devices other than hearing aids
    • GPHYSICS
    • G02OPTICS
    • G02CSPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00Optical parts
    • G02C7/02Lenses; Lens systems ; Methods of designing lenses
    • G02C7/04Contact lenses for the eyes
    • G02C7/047Contact lens fitting; Contact lenses for orthokeratology; Contact lenses for specially shaped corneae
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29DPRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00Producing optical elements, e.g. lenses or prisms
    • B29D11/00009Production of simple or compound lenses
    • B29D11/00038Production of contact lenses
    • B29D11/00048Production of contact lenses composed of parts with dissimilar composition
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29DPRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00Producing optical elements, e.g. lenses or prisms
    • B29D11/0074Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00807Producing lenses combined with electronics, e.g. chips
    • GPHYSICS
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    • G02CSPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
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    • G02C7/02Lenses; Lens systems ; Methods of designing lenses
    • G02C7/04Contact lenses for the eyes
    • GPHYSICS
    • G02OPTICS
    • G02CSPECTACLES; SUNGLASSES OR GOGGLES INSOFAR AS THEY HAVE THE SAME FEATURES AS SPECTACLES; CONTACT LENSES
    • G02C7/00Optical parts
    • G02C7/02Lenses; Lens systems ; Methods of designing lenses
    • G02C7/04Contact lenses for the eyes
    • G02C7/049Contact lenses having special fitting or structural features achieved by special materials or material structures
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Definitions

  • This disclosure generally relates to a contact lens having a thin silicon chip integrated therein and methods for assembling the silicon chip within the contact lens.
  • Silicon chips are generally assembled using flip chip bonding or wire bonding.
  • Flip chip bonding is a method for interconnecting semiconductor devices to external circuitry (e.g., a circuit board or another chip or wafer), with solder bumps that have been deposited onto chip pads.
  • the solder bumps are deposited on the chip pads on a top side of the wafer during a final wafer processing step.
  • the chip In order to mount the chip to external circuitry it is flipped over so that its top side faces down, and aligned so that its pads align with matching pads on an external circuit.
  • the solder bumps are then melted to complete interconnects.
  • wire bonding the chip is mounted to external circuitry in an upright position and wires are used to interconnect the chip pads to external circuitry.
  • these silicon chip assembly methods are not suitable for assembling silicon chips on or within a contact lens.
  • standard chips are too thick to fit onto a contact lens.
  • FIGs. 1A and IB present alternative perspectives of an example contact lens having a silicon chip integrated therein/thereon in accordance with aspects described herein.
  • FIGs. 2A-2C present cross-sectional views of example embodiments of a contact lens having a silicon chip integrated therein in accordance with aspects described herein.
  • FIG. 3 depicts a process for creating silicon chips that can be assembled onto a contact lens in accordance with aspects described herein.
  • FIG. 4 illustrates a high level overview of processes by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
  • FIGs. 5A-5E illustrate an exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
  • FIGs. 6A-6D illustrate another an alternative perspective of exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
  • FIGs. 7A-7D illustrate another exemplary process 700 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
  • FIGs. 8A-8D illustrate another an alternative perspective of exemplary process 800 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
  • FIGs. 9A-9D illustrate another exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
  • FIGs. 10A-10D illustrate another an alternative perspective of exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
  • FIGs. 1 1A-1 1C illustrate a process for employing a contact lens substrate having a silicon chip bonded thereon to form a contact lens in accordance with aspects described herein.
  • FIG. 12A presents an alternative, three-dimensional view of a contact lens form in accordance with aspects described herein.
  • FIG. 12B depicts the final processing of a contact lens form to form a contact lens in accordance with aspects described herein.
  • FIG. 13 presents a exemplary methodology by which a silicon chip is assembled onto and/or within a contact lens in accordance with aspects described herein.
  • FIG. 14 presents another exemplary methodology by which a silicon chip is assembled onto and/or within a contact lens in accordance with aspects described herein.
  • FIG. 15 presents another exemplary methodology by which a silicon chip is assembled onto and/or within a contact lens in accordance with aspects described herein.
  • the disclosed subject matter relates to methods for manufacturing a contact lens having an integrated circuit integrated therein or thereon.
  • the method involves creating a plurality of lens contact pads on a lens substrate and creating a plurality of chip contact pads on an integrated circuit element or chip, such as a silicon chip. Assembly bonding material is then applied to the plurality of lens contact pads or the plurality of chip contact pads. The chip is then bonded to the lens substrate via the assembly bonding material whereby the lens contact pads are aligned with the chip contact pads.
  • the lens substrate is formed into a contact lens.
  • the chip prior to forming the lens substrate into a contact lens, the chip is sealed onto the lens substrate.
  • the lens substrate is then cut into a ring shape and molded to match curvature of an eye over which the contact lens is to be worn.
  • the molded lens substrate is then embedded into a hydrogel to form the contact lens.
  • the plurality of chip contact pads are formed as metal lines on the chip using photolithography.
  • the plurality of lens contact pads can be formed as metal lines on the lens substrate using photolithography.
  • the plurality of lens contact pads are formed as a plurality of metal squares having a length of about 100 microns or less.
  • the subject methods enable assembly of thin silicon chips within a contact lens without use of bumped pads and standard chips.
  • the disclosed methods involve thinning a silicon ship substrate down to a thickness of less than about 100 microns (e.g., within the range of 20-100 microns thick) and then dicing the thinned substrate into chips smaller than 1 mm on each side. It is to be appreciated that these noted ranges/sizes are merely exemplary, and any suitable thickness or size can be employed in accordance with embodiments described herein.
  • Metal lines are patterned onto a chip and/or a lens substrate to create contact pads for the chip and/or the lens substrate. The metal lines also serve as wires to connect other chips and/or other electrical components of the contact lens (e.g. antennas, sensors, light illuminating diodes (LEDS), and etc.).
  • a small amount of low temperature assembly bonding material is placed onto contact pads of either the lens substrate or the chip using a syringe.
  • the contact pads of the chip are then aligned with the contact pads of the lens substrate and the chip is bonded to the lens substrate using the solder material.
  • the lens substrate can include multiple contact pads that can be segmented into multiple assembly sites for assembling a chip thereto.
  • the contact pads of the chip are aligned with the lens substrate contact pads in the assembly site and the chip is bonded to the assembly site using a flip-chip bonder.
  • the flip-chip bonder tool aligns the chip contact pads with the lens substrate contact pads and applies pressure along with temperature to create a mechanical and electrical connection between the chip and the lens substrate.
  • the chip can be sealed onto the lens substrate with a substance (e.g. parylene) to make the lens substrate biocompatible and to hold the chip in place.
  • the lens substrate can then be formed into a contact lens.
  • the lens substrate is cut into a ring shape.
  • the ring shape can include indentations on the inner and/or outer edges of the ring to facilitate molding of the ring and to reduce wrinkling.
  • the ring is then molded to match curvature of the eye.
  • the ring is further embedded into hydrogel to complete the contact lens assembly process.
  • FIGs. 1A and IB depict various perspectives of an example contact lens 100 having an integrated circuit or chip 102 integrated therein/thereon. As used herein, the terms integrated circuit and chip are used interchangeably.
  • FIG. 1A illustrates a three dimensional image of example contact lens 100
  • FIG. IB presents a cross-sectional view of example contact lens 100 being worn over an eye 104.
  • Contact lens 100, and additional contact lenses disclosed herein are generally provided in a spherical shape that conforms to shape of an eye.
  • contact lens 100 includes two primary surfaces, an inner surface 108 and an outer surface 106, both of which are spherical.
  • the inner surface 108 is concave and is adjacent to/rests on, a surface of the eye 104.
  • the outer surface 106 is convex and opposite the inner surface 108.
  • the contact lens 100 has a thickness that spans in a horizontal direction between inner surface 106 and outer surface 104.
  • Chip 102 is located within a thickness of the contact lens 102.
  • the width of the lens is thickest (relative to the width of the lens at other areas of the lens) at a center point of the lens, tapering outwardly to a knifelike edge at the perimeter of the lens.
  • the particular dimensions (including dimensions attributable to thickness, diameter, curvature, and etc.) of the subject contact lenses are not critical and may vary.
  • chip 102 is silicon chip that can be employed by contact lens 100 to facilitate electrical operations of the contact lens.
  • chip 102 can perform various computing and logic functions of contact lens 102.
  • contact lenses disclosed herein can include multiple electrical components that connect to silicon chip 102.
  • contact lenses disclosed herein can include sensors, antennas, LEDs, power sources, and etc.
  • contact lens 100 and additional contact lenses described herein
  • contact lens 100 is depicted having a single silicon chip 102, it should be appreciated than contact lens 100 (and additional contact lenses described herein) can be provided having a plurality of chips 102 integrated therein.
  • silicon chip 102 is a piece of almost pure silicon having a size smaller than standard silicon chips employed in standard computing devices. For example, while most computing devices employ silicon chips that are one square centimeter and have a thickness of about 1 millimeter, chip 102 can have a size of about 1 square millimeter and a thickness less than 100 microns.
  • silicon chip 102 contains a plurality (up to millions) of transistors and other small electronic circuit components, packed and interconnected in layers beneath the surface of the chip.
  • the surface of the silicon chip can further include a grid of metallic lines etched thereon which are used to make electrical connections to other components of the chip 102 and/or the contact lens 100
  • FIGs 2A-2C present cross-sectional views of example embodiments of a contact lens having silicon chip 206 integrated therein in accordance with aspects described herein.
  • the contact lenses depicted in FIGs. 2A, 2B, and 2C, lenses 200, 202, and 204 respectively, respectively have two or more layers where silicon chip 206 is integrated within one of the layers.
  • the lenses 200, 202, and 204 are formed by first integrating silicon chip 206 into a lens substrate layer 214 and then forming one or more additional contact lens layers 216 on and/or around the lens substrate layer 214.
  • chip 206 is first assembled onto a lens substrate 214.
  • the lens substrate is then molded into a lens shape to fit the contours of the eye 208 and combined within a contact lens material (e.g. hydrogel) to form the contact lens.
  • a contact lens material e.g. hydrogel
  • the lens substrate layer 214 having the silicon chip 206 and the contact lens material layer 216 can be combined in a variety of manners.
  • the lens substrate in order to combine the lens substrate layer 214 and the contact lens material layer 216, the lens substrate can be dipped into liquid contact lens material 216.
  • the lens substrate 214 in order to combine the lens substrate layer 214 and the contact lens material layer 216, the lens substrate 214 can be coated/covered with lens contact material 216 on one or both sides of the lens substrate.
  • the lens substrate 214 in order to combine the lens substrate layer 214 and the contact lens material layer 216, the lens substrate 214 can be pressed into and/or bonded with one or more layers of lens contact material 216.
  • the lens substrate layer 214 and the lens material layer(s) 216 can include various materials. In an aspect, the lens substrate layer 214 and the lens material layer 216 comprise the same material. In another aspect, the lens substrate layer 214 and the lens material layer comprise different materials.
  • the lens substrate layer 214 can include any suitable material that enables fixation of contact pads to the material (e.g. metal pads and/or metal lines) and fixation of a chip 206 to the contact pads.
  • lens substrate layer material 214 Some exemplary material that can be employed as the lens substrate layer material 214 include but are not limited to a soft polymer material including but not limited to, a hydrogel, a silicone based hydrogel, a polyacrlyamide, or a hydrophilic polymer.
  • contact lens substrate layer 214 is formed from a substrate material that includes at least one of a crosslinked hydrogel comprising hydrophilic monomers (e.g.
  • contact lens substrate layer 214 is formed from a substrate material that includes at least of a one silicone hydrogel (e.g. crosslinked hydrogels containing silicone macromers and monomers, as well as hydrophilic monomers that absorb water).
  • contact lens substrate layer 214 is formed from a substrate material that includes one or more rigid materials including but not limited to, a silicone polymer, polymethyl methacrylate, or rigid gas permeable materials.
  • the lens material layer 216 can include any suitable material that provides support for the lens substrate layer 214, contain/embed the lens substrate layer 214 and/or otherwise form a structural and/or functional body of the contact lens.
  • Some exemplary materials that can be employed as the lens material layer 216 can include but are not limited to a soft polymer material including but not limited to, a hydrogel, a silicone based hydrogel, a polyacrlyamide, or a hydrophilic polymer.
  • lens material layer 216 is formed from a substrate material that includes at least one of a crosslinked hydrogel comprising hydrophilic monomers (e.g.
  • lens material layer 216 is formed from a substrate material that includes at least of a one silicone hydrogel (e.g. crosslinked hydrogels containing silicone macromers and monomers, as well as hydrophilic monomers that absorb water).
  • lens material layer 216 is formed from a substrate material that includes one or more rigid materials including but not limited to, a silicone polymer, polymethyl methacrylate, or rigid gas permeable materials.
  • the lens substrate layer 214 is located at an outer surface 210 of the contact lens 200 and the lens material layer 216 is located at an inner surface 212 of the contact lens 200.
  • contact lens 200 can include two layers, lens substrate layer 214 and a lens material layer 216.
  • the lens substrate layer 214 includes the silicon chip and the silicon chip can further be located at/on the outer surface 210 of the contact lens.
  • silicon chip 206 is first integrated onto lens substrate layer 214 and then the lens substrate layer 214 is coated on its concave side with contact lens material 216.
  • the lens substrate layer 214 is located at an inner surface 212 of contact lens 202 and the lens material layer 216 is located at an outer surface 210 of the contact lens 202.
  • contact lens 202 can also include two layers, lens substrate layer 214 and a lens material layer 216.
  • the lens substrate layer 214 includes the silicon chip 206 and the silicon chip can further be located at/on the inner surface 212 of the contact lens 202.
  • silicon chip 206 is first integrated onto lens substrate layer 214 and then the lens substrate layer 214 is coated on its convex side with contact lens material 216.
  • contact lens 204 includes a lens substrate layer 214 located between two layers of lens material 216.
  • contact lens 204 can also include three layers.
  • the lens substrate layer 214 includes the silicon chip 206 and thus the silicon chip is located suspended between the inner surface 212 and the outer surface 210 of the contact lens 204.
  • silicon chip 206 is first integrated onto lens substrate layer 214 and then the lens substrate layer 214 is dipped into or otherwise entirely coated/embedded within, contact lens material 216.
  • a silicon chip substrate 301 is first thinned down to a thickness of less than 100 microns.
  • the silicon chip substrate 301 is thinned down to a thickness of less than 75 microns.
  • the silicon chip substrate 301 is thinned down to a thickness of less than 50 microns.
  • the silicon chip substrate 301 is thinned down to a thickness of less than 35 microns.
  • the thinned silicon chip substrate 302 is then diced into a plurality of silicon chips 304 having a size suitable for integration into a contact lens.
  • the size and shape of the chip 304 is restricted by thickness and curvature of a contact lens in which it is to be integrated.
  • a chip 304 can have a rectangular shape or a square shape. In an aspect, a chip 304 can have sides less than 15 mm. In another aspect, a chip 304 can have sides less than 10 mm. In another aspect, a chip 304 can have sides less than 5.0 mm. Still in yet another aspect, a chip 304 can have sides less than 1.0 mm. [0040] FIGs. 4-10D illustrate exemplary embodiments of processes by which a chip 304 is assembled onto a contact lens substrate 418 in accordance with aspects described herein. FIG.
  • FIG 4 illustrates a high level overview of processes by which a chip 304 is assembled onto a contact lens substrate 418 while FIGs. 5A-10D illustrate detailed steps in various processes by which a chip 304 is assembled onto a contact lens substrate 418.
  • the contact lens substrate can be modified into a contact lens.
  • the contact lens substrate 418 can be molded into the shape of a contact lens to become the contact lens substrate layer (e.g. layer 214) in an assembled contact lens (e.g. lenses 200, 202, 204 and the like).
  • the contact lens substrate 418 can include one or more of the structure and/or functionality of contact lens substrate layer 214 (and vice versa).
  • contact lens substrate 418 can comprise the materials described with reference to contact lens substrate layer 214.
  • a silicon chip 304 that has been sized to a suitable size for integration into a contact lens (e.g. having a thickness less than 100 microns and sides less than about 1 mm) is depicted having metal lines 402 provided thereon.
  • the silicon chip 304 can be processed to form various functional features of the silicon chip, including at least chip contact pads.
  • Chip contact pads provide the contact point for electrically connecting a chip 304 to substrate 418 and/or other electrical component.
  • traditional metal chip contact pads (not depicted) can be created on a surface of chip 304.
  • metal chip pads in the form of small and thin sheets of metal in the shape of squares or rectangles can be formed on a surface of the chip 304 to create the chip contact pads.
  • Such metal contact pads can have sides less than 100 microns.
  • metals lines 402 are patterned onto a surface of chip 304.
  • metal lines 402 can be patterned onto a surface 406 of a chip 304 using photolithography. These metal lines 402 serve as chip contact pads for the chip 304 and also serve as wires to connect the chip 304 to other chips and/or components of a contact lens (e.g. antennas, sensors, LEDs, and etc.) in which the chip 304 is integrated.
  • intersection points 404 of metal lines 402 can serve as the chip contact pads of chip 304.
  • any point of a metal line 402 can serve as a chip contact pad.
  • intersecting parallel metal lines 402 are shown forming a grid pattern on chip 304, such a line configuration is merely depicted for exemplary purposes.
  • lines 402 can be formed in any pattern, in includes patterns having non-intersecting lines and patterns having non-parallel lines.
  • the surface of chip 304 on which the metal lines are formed is a substantially flat polymer layer provided on the chip 304.
  • the metal lines 402 are patterned onto the substantially flat polymer layer using photolithography.
  • the polymer layer can include but is not limited to parylene, polyimide, and polyethylene terephthalate (PET).
  • Contact lens substrate 418 is also presented having lens contact pads located on a surface thereof.
  • lens contact pads provide the contact points for electrically and/or physically connecting the substrate 418 with the chip 304 and/or electrically connecting other electrical components provided within a contact lens in which the lens substrate 418 is integrated, to the chip 304.
  • traditional metal chip contact pads 414 can be created on a surface of lens substrate 418.
  • metal chip pads in the form of small and thin sheets of metal in the shape of squares or rectangles can be formed on a surface of the lens substrate 418 to create the lens contact pads.
  • Such metal contact pads can have sides less than 100 microns.
  • metals lines 416 are patterned onto a surface of contact lens substrate 418 in a same or similar fashion as metal lines 402 patterned on chip 304.
  • metal lines 416 can be patterned onto a surface of lens substrate 418 using photolithography.
  • metal lines 416 can serve as lens contact pads for the lens substrate 418 and also serve as wires to connect the chip 304 to other chips and/or components of a contact lens (e.g. antennas, sensors, LEDs, and etc.) in which the chip 304 is integrated.
  • intersecting parallel metal lines 416 are shown forming a grid pattern on substrate 418 such a line configuration is merely depicted for exemplary purposes.
  • lines 416 can be formed in any pattern, in includes patterns having non-intersecting lines and patterns having non- parallel lines.
  • the lens substrate and/or a surface of lens substrate 418 on which the metal lines 416 are formed is a substantially flat polymer layer.
  • the metal lines 416 are patterned onto the substantially flat polymer layer using photolithography.
  • the polymer layer can include but is not limited to parylene, polyimide, and polyethylene terephthalate (PET).
  • both traditional metal contact pads 414 and metal line contact pads 416 are provided on lens substrate 418 merely for exemplary purposes.
  • any portion of the substrate 418 can be provided with contact pads.
  • the entire surface of the substrate 418 can be patterned with metal lines or square metal pads.
  • a subset of the metal lines/metal pads can be selectively employed as the contact pads for assembly of a chip thereon.
  • a subset of the metal lines/metal pads can be selectively employed as an assembly site for assembly of a chip thereon and the substrate can be provided with a plurality of potential assembly sites.
  • the term assembly site refers to an area of substrate 418 having lens contact pads that can be aligned with the contact pads of a chip.
  • an assembly bonding material (not shown) is applied to either the chip or the lens substrate 418.
  • the assembly bonding material includes an anisotropic conductive film (ACF) or an anisotropic conductive paste (A CP).
  • ACF and ACP are materials that establish a conducting path when pressed between two metal pads, such as a lens contact pad and a chip contact pad.
  • an ACF or ACP is applied over an entire assembly site on the substrate 418 (and/or the chip) having lens (or chip) contact pads therein so as to cover the contact pads and the area between and around the contact pads. With this aspect, assembly bonding material does not need to be applied to the contact pads individually.
  • the silicon chip 304 is then flipped over, following arrow 408, so that the surface 406 of the silicon chip 304 having the chip contact pads (e.g. the surface having the metal lines 402) faces a surface of the contact lens substrate 418 having the lens contact pads thereon. Dashed lines 402 presented on flipped chip 304 are indicative of the metal lines 402 now on the underside 306 of the chip.
  • the chip 304 is then lowered onto the substrate 418 and the chip contact pads are aligned with the lens contact pads.
  • the chip 304 is then assembled onto the lens substrate via pressing the chip 304 onto the ACF or ACP and heating the chip 304/substrate 418 assembly to cure or solidify the chip 304 connection with the substrate 418.
  • the ACP or ACF is activated in order to secure chip 304 to substrate 418 in part by the heating.
  • activation of an ACP or ACF can include boiling a flux out of the ACP or ACF to create a conductive path between the chip contact pads and lens contact pads and to create an adhesive (e.g. an underfill) material that bonds chip 304 to substrate 418.
  • heating of the of the chip 304/substrate 418 assembly is performed so that conduction results in a single direction so that the contact pads do not short.
  • the assembly bonding material includes a solder solution or solder paste.
  • solder solution or solder paste (not shown) is applied to either the chip contact pads or the lens contact pads in a particular assembly site.
  • the solder solution/paste is applied to respective ones of either the chip contact pads or the lens contact pads using a syringe.
  • the silicon chip 304 is then flipped over, following arrow 408, so that the surface 406 of the silicon chip 304 having the chip contact pads (e.g. the surface having the metal lines 402) faces a surface of the contact lens substrate 418 having the lens contact pads thereon. Dashed lines 402 presented on flipped chip 304 are indicative of the metal lines 402 now on the underside 306 of the chip.
  • the chip 304 is then lowered onto the substrate 418 and the chip contact pads are aligned with the lens contact pads. Head and pressure are then applied to at least one of the chip 304 or the lens substrate 418 so that the solder solution is flowed and solidified so as to bond the chip 304 to the lens substrate 418.
  • Arrow 410 shows an example where the chip 304 is bonded to an assembly site on the substrate 418 that comprises metal squares as contact pads.
  • Arrow 412 shows an example where the chip 304 is bonded to an assembly site on the substrate 418 that comprises metal lines as contact pads.
  • an underfill is applied to the lens substrate/chip complex in order to hold the chip 304 onto the substrate 418.
  • connections established between the chip 304 and the substrate 418 can be relatively weak when using a solder solution/paste as the assembly bonding material.
  • an underfill material can be applied between the chip 304 and the substrate so as to flow around the respective solder pads and solidified solder material to further facilitate bonding of the chip 304 to the substrate.
  • the underfill can include a non-conductive or substantially non- conductive material such as an epoxy or adhesive.
  • flipping 408, alignment of chip 304 with contact pads on lens substrate 418, and bonding is performed using a flip chip bonder.
  • flip chip bonder refers to a tool that performs functions and features of traditional flip chip bonding methods, including at least flipping of chip 304, alignment of chip 304 with substrate 418, and application of heat and pressure to chip 304 and substrate 418 such that the chip 304 and the substrate 418 bond via the solder solution provided there between.
  • the assembly bonding material that is applied to the lens substrate or chip is a low activation temperature material.
  • the assembly bonding material includes an ACF or an ACP that has a low activation temperature, such as below 200° C.
  • the assembly bonding material includes a solder material that has a low melting point, such as below 200° C.
  • the assembly bonding material can have an activation temperature or boiling point less than 150° C.
  • the assembly bonding material can have an activation temperature or boiling point less than 100° C.
  • the assembly bonding material can have an activation temperature or boiling point less less than 85° C.
  • the assembly bonding material can have an activation temperature or boiling point less than 65° C.
  • Some exemplary low temperature solder solutions/pastes that can be employed as the assembly bonding material can include but are not limited to solutions or pastes having varying ratios of indium, tin, and/or bismuth.
  • indium alloy number 19 from Indium Corp. can be employed as an exemplary solder solution and has a ration of 51% In, 32.5% Bi, and 16.5 Sn with a melting temperature of about 60 0 C.
  • an employed solder solution/paste is lead-free so as not to disrupt an eye in which a contact lens, having a chip 304 integrated therein, is worn.
  • the solder solution can also be mixed with a flux or acidic solution (such as HCL and water) to prevent or reduce oxidation of the solder solution.
  • a flux or acidic solution such as HCL and water
  • Some exemplary fluxes can include but are not limited to TACFlux® 020B and Indalloy Flux #4-OA from Indium Corp.
  • a commercially available solder solution can be employed as the assembly bonding material that is formed as a paste suspended in a solder solution, such NC-SMQ®90 Solder Paste from Indium Corp.
  • FIGs. 5A-5E illustrated is an exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein.
  • Process 500 follows in part, arrow 410 of FIG. 4.
  • process 500 present an embodiment where chip 304 is bonded to an assembly site on the substrate 418 that comprises metal squares 414 as contact pads.
  • a contact lens substrate 418 is provided having a plurality of metal square contact pads 414 created thereon.
  • a chip 304 is assembled to substrate 418 using either solder solution according to FIG. 5B or a solder film or paste including ACF or ACP respectively according to FIG. 5C. Accordingly, process 500 can proceed with steps according to FIG. 5B or according to FIG. 5C.
  • solder solution 502 is applied to each of the lens contact pads 414.
  • the solder solution 502 is represented by the darkening of the lens contact pads 414 as compared to the lens contact pads 414 of FIG. 5 A).
  • the solder solution 502 is selectively applied to each of the lens contact pads 414 using a syringe, pipette, needle, or other precise applicator tool.
  • a chip 304 having chip contact pads in the form of metal lines 402 is flipped over and aligned with lens substrate 418.
  • the chip contact pads (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414 having solder solution 502 thereon.
  • an ACF or ACP 506 is applied to the lens substrate 418 so as to cover the lens contact pads 414 and the area around the respective lens contact pads 414 in the assembly site. Then a chip 304 having chip contact pads in the form of metal lines 402 is flipped over and aligned with lens substrate 418. In particular, the chip contact pads, (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414 having an ACF or ACP thereon.
  • the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution or the ACF/ACP in response to the application of pressure and/or heat.
  • a flip chip bonder can perform the flipping, aligning and bonding aspects of method 500.
  • heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate.
  • the chip 304 can be sealed onto the lens substrate 418 using a sealant 504.
  • the sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible.
  • the entire substrate/chip complex can be coated in a sealant 504.
  • the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
  • the sealant 504 is parylene or polyimide.
  • FIGs. 6A-6D illustrate an alternative perspective of exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein.
  • FIGs. 6A-6D present cross-sectional views of chip 304 and lens 418 during process 500.
  • a contact lens substrate 418 having a plurality of metal square contact pads 414 created thereon.
  • solder solution 502 is applied to each of the lens contact pads 414.
  • the solder solution 502 is selectively applied to each of the lens contact pads 414 using a syringe, pipette, needle, or other precise applicator tool.
  • a chip 304 having chip contact pads 402 is aligned with lens substrate 418.
  • the chip contact pads 402 are aligned with each of the lens contact pads 414 having solder solution 502 thereon.
  • the chip contact pads 402 are the intersection points 404 of the metal lines 402 as presented on chip 304 in FIG. 4.
  • the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat.
  • heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause limited damage to the remaining area of the substrate.
  • a flip chip bonder can perform the flipping, aligning and bonding aspects of method 500.
  • an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418.
  • the chip 304 can be sealed onto the lens substrate 418 using a sealant 504.
  • the sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible.
  • the entire substrate/chip complex can be coated in a sealant 504.
  • the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
  • FIGs. 7A-7D illustrated is another exemplary process 700 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein.
  • FIGs. 7A-7D it should be appreciated that only a portion of contact lens substrate 418 is presented for exemplary purposes.
  • Process 700 follows in part, arrow 412 of FIG. 4.
  • process 700 present an embodiment where chip 304 is bonded to an assembly site on the substrate 418 that comprises metal lines 416 as contact pads.
  • a contact lens substrate 418 having a plurality of metal lines 416 created thereon.
  • the metal lines 416 serve as the lens contact pads.
  • the intersection point of the metal lines in particular serve as the lens contact pads.
  • solder solution 502 is applied to the lens contact pads 416 at each metal line intersection point.
  • the solder solution 502 is selectively applied to each of the lens contact pads 416 using a syringe, pipette, needle, or other precise applicator tool.
  • a chip 304 having chip contact pads in the form of metal lines 402 is flipped over and aligned with lens substrate 418.
  • the chip contact pads, (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 416, the metal line 416 intersection points, having solder solution 502 thereon.
  • the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat.
  • heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate.
  • a flip chip bonder can perform the flipping, aligning and bonding aspects of method 700.
  • an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418.
  • the chip 304 can be sealed onto the lens substrate 418 using a sealant 504.
  • the sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible.
  • the entire substrate/chip complex can be coated in a sealant 504.
  • the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
  • FIGs. 8A-8D illustrate an alternative perspective of exemplary process 700 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein.
  • FIGs. 8A-8D present cross-sectional views of chip 304 and lens 418 during process 700.
  • a contact lens substrate 418 having a plurality of contact pads 416 created thereon.
  • the contact pads 416 are formed from metal lines such as metal lines 416 that have been patterned onto the lens substrate 418 via photolithography.
  • the contact pads 416 include intersection points of metal lines 416 as depicted in FIG. 4.
  • the contact pads 416 further have solder solution 502 applied thereto.
  • the solder solution 502 is selectively applied to each of the lens contact pads 416 using a syringe, pipette, needle, or other precise applicator tool.
  • a chip 304 having chip contact pads 402 is aligned with lens substrate 418.
  • the chip contact pads 402 are aligned with each of the lens contact pads 416 having solder solution 502 thereon.
  • the chip contact pads 402 are similarly intersection points 404 of the metal lines 402 as presented on chip 304 in FIG. 4.
  • the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat.
  • heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate.
  • a flip chip bonder can perform the flipping, aligning and bonding aspects of method 700.
  • an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418.
  • the chip 304 can be sealed onto the lens substrate 418 using a sealant 504.
  • the sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible.
  • the entire substrate/chip complex can be coated in a sealant 504.
  • the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
  • FIGs. 9A-9D illustrated is another exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein.
  • FIGs. 9A-9B it should be appreciated that only a portion of contact lens substrate 418 is presented for exemplary purposes.
  • Process 900 presents an embodiment where chip 304 is bonded to an assembly site on the substrate 418 that comprises metal square 414 as contact pads and where the bonding solution is applied to the chip contact pads.
  • a silicon chip 304 having a plurality of metal lines 402 created thereon.
  • the metal lines 402 serve as the chip contact pads.
  • the intersection points of the metal lines in particular serve as the chip contact pads.
  • solder solution 502 is applied to the chip contact pads 402 at each metal line intersection point.
  • the solder solution 502 is selectively applied to each of the chip contact pads 402 using a syringe, pipette, needle, or other precise applicator tool.
  • the chip is 304 is further flipped over following arrow 408 so that the chip contact pads having the solder solution applied thereto can face a surface of the lens substrate 418 having contact pads 414 thereon.
  • the dashed lines on flipped chip 304 are indicative of the chip contact pads now on the underside 406 of the chip.
  • the flipped chip 304 having the chip contact pads with solder applied is aligned with lens substrate 418.
  • the chip contact pads (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414.
  • Lens substrate 418 is provided having contact pads 414 located thereon.
  • lens contact pads 414 are presented as metal squares, it should be appreciated that the lens contact pads can be in the form of metal lines.
  • the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat.
  • heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate.
  • a flip chip bonder can perform the flipping, aligning and bonding aspects of method 900.
  • an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418.
  • the chip 304 can be sealed onto the lens substrate 418 using a sealant 504.
  • the sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible.
  • the entire substrate/chip complex can be coated in a sealant 504.
  • the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
  • FIGs. 10A-10D illustrate an alternative perspective of exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein.
  • FIGs. 10A-10D present cross-sectional views of chip 304 and lens 418 during process 900.
  • a silicon chip 304 having a plurality of metal lines 402 created thereon.
  • the metal lines 402 serve as the chip contact pads.
  • the contact pads 402 are the intersection points of the metal lines 402 (point 404) as presented in FIG. 4.
  • solder solution 502 is applied to the chip contact pads 402 at each metal line intersection point.
  • the solder solution 502 is selectively applied to each of the chip contact pads 402 using a syringe, pipette, needle, or other precise applicator tool.
  • the chip is 304 is further flipped over following arrow 408 so that the chip contact pads having the solder solution applied thereto can face a surface of the lens substrate 418 having contact pads 414 thereon.
  • the flipped chip 304 having the chip contact pads with solder applied is aligned with lens substrate 418.
  • the chip contact pads (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414.
  • Lens substrate 418 is provided having contact pads 414 located thereon.
  • lens contact pads 414 are presented as metal squares, it should be appreciated that the lens contact pads can be in the form of metal lines.
  • the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat.
  • heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate.
  • a flip chip bonder can perform the flipping, aligning and bonding aspects of method 900.
  • an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418.
  • the chip 304 can be sealed onto the lens substrate 418 using a sealant 504.
  • the sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible.
  • the entire substrate/chip complex can be coated in a sealant 504.
  • the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
  • FIGs. 1 lA-1 1C illustrated is a process for employing a contact lens substrate having a silicon chip bonded thereon to form a contact lens in accordance with aspects described herein.
  • a contact lens substrate 1 102 having a silicon chip 1104 bonded thereon is provided.
  • the contact lens substrate 1102 and chip 1 104 can include one or more of the structure and/or functionality of contact lens substrate layer 214 and chip 206, and/or the contact lens substrate 418 and chip 304 (and vice versa).
  • the chip 1 104 is sealed to the contact lens substrate 1102 via a sealant (e.g. parylene).
  • the contact lens substrate 1 102 is used to form a contact lens form 11 12.
  • the contact lens substrate 1 102 is molded into a shape of a contact lens form 1 112. (e.g. a round and curved shape).
  • the contact lens substrate 1102 is molded to match the curvature of an eye in which the contact lens is to be worn.
  • the contact lens substrate 1 102 is cut into a shape that can be formed into the shape of a contact lens. For example, as seen in FIG. 1 IB, the contact lens substrate 1102 can be cut into a circular shape or ring shape 11 10. The cut substrate 11 10 shown in FIG.
  • the cut substrate 1 IB is cut out of the contact lens substrate 1102 along dotted line pattern 1 106.
  • the cut substrate 1 1 10 can include cut slits or incisions 1 108 on inner and/or outer edges of the ring to facilitate forming the cut substrate 1 110 into a contact lens shape.
  • the cut substrate 1 110 is cut out of the contact lens substrate 1102 so as to include the attached chip 1104.
  • FIG. l lC shows a two-dimensional view of a contact lens form 1 112 formed out of contact lens substrate 1102.
  • Contact lens form 11 12 includes chip 1104.
  • contact lens form 1 112 is formed by closing off the incisions 1 108 of cut substrate 11 10.
  • the open edges of cut substrate 11 10 can be bended and brought together (e.g. following the dashed arrow of FIG. 1 IB) to form the contact lens form 1 112 of FIG. 11C.
  • FIG. 12A presents an alternative, three-dimensional view of contact lens form 1 112.
  • contact lens form 11 12 can be employed as a finished, wearable/functional contact lens.
  • Contact lens form matches the shape of a contact lens and forms to the curvature of the eye in which it is to be worn.
  • Contact lens form further includes the chip 1 104 integrated thereon.
  • contact lens form is further processed to form a finished, wearable/functional contact lens.
  • FIG. 12B depicts the final processing of contact lens form 1 112 to form a contact lens 1202.
  • Contact lens 1202 comprises the contact lens 1 112 form embedded and/or coated on one or more sides with contact lens material 1204.
  • the contact lens material 1204 can include one or more of the structure and/or functionality of lens material 216 (and vice versa).
  • the contact lens material 1204 is hydrogel, such as silicone hydrogel.
  • Contact lens 1202 can also include one or more of the structure and/or functionality contact lenses 100, 200, 202, 204 (and vice versa).
  • contact lens 1202 can include contact lens form 1 112 entirely embedded in contact lens material 1204 and/or partially covered with contact lens material 1204.
  • contact lens form 1 102 is dipped into a liquid contact lens material and then the contact lens material is allowed to solidify.
  • FIGs. 13-15 illustrates methodologies or flow diagrams in accordance with certain aspects of this disclosure. While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, the disclosed subject matter is not limited by the order of acts, as some acts may occur in different orders and/or concurrently with other acts from that shown and described herein. For example, those skilled in the art will understand and appreciate that a methodology can alternatively be represented as a series of interrelated states or events, such as in a state diagram. Moreover, not all illustrated acts may be required to implement a methodology in accordance with the disclosed subject matter. Additionally, it is to be appreciated that the methodologies disclosed in this disclosure are capable of being stored on an article of manufacture to facilitate transporting and transferring such methodologies to computers or other computing devices.
  • a contact lens is formed having a silicon chip integrated therein.
  • a plurality of chip contact pads are formed on a chip by forming a plurality of metal lines on a surface of the chip. (e.g. using photolithography).
  • solder solution is applied to each of a plurality of lens contact pads formed on a lens substrate (e.g. using a syringe).
  • the plurality of chip contact pads are bonded to the plurality of lens contact pads via the solder solution to bond the chip to the lens substrate (e.g. using a flip chip bonder).
  • the lens substrate is embedded into a hydrogel to form a contact lens.
  • a contact lens is formed having a silicon chip integrated therein.
  • a plurality of chip contact pads are formed on a chip by forming a plurality of metal lines on a surface of the chip. (e.g. using photolithography).
  • solder solution is applied to each of a plurality of lens contact pads formed on a lens substrate (e.g. using a syringe).
  • the plurality of chip contact pads are bonded to the plurality of lens contact pads via the solder solution to bond the chip to the lens substrate (e.g.
  • the lens substrate is sealed onto the chip (e.g. using a sealant 1504).
  • the lens substrate is cut into a ring shape and molded to match the curvature of an eye over which a contact lens is to be worn. Then at 1340, the lens substrate is embedded into a hydrogel to form the contact lens.
  • a contact lens is formed having a silicon chip integrated therein.
  • a plurality of chip contact pads are formed on a chip by forming a plurality of metal lines on a surface of the chip. (e.g. using photolithography).
  • solder solution is applied to each of the plurality of chip contact pads (e.g. using a syringe).
  • the plurality of chip contact pads are bonded to a plurality of lens contact pads via the solder solution to bond the chip to the lens substrate (e.g. using a flip chip bonder).
  • the lens substrate is embedded into a hydrogel to form a contact lens.

Abstract

A contact lens having a thin silicon chip integrated therein is provided along with methods for assembling the silicon chip within the contact lens. In an aspect, a method includes creating a plurality of lens contact pads on a lens substrate and creating a plurality of chip contact pads on a chip. The method further involves applying assembly bonding material to the each of the plurality of lens contact pads or chip contact pads, aligning the plurality of lens contact pads with the plurality of chip contact pads, bonding the chip to the lens substrate via the assembly bonding material using flip chip bonding, and forming a contact lens with the lens substrate.

Description

ASSEMBLING THIN SILICON CHIPS ON A CONTACT LENS
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority to U.S. Patent Application No. 13/627,574, filed September 26, 2012, which is hereby incorporated by reference in its entirety.
TECHNICAL FIELD
[0002] This disclosure generally relates to a contact lens having a thin silicon chip integrated therein and methods for assembling the silicon chip within the contact lens.
BACKGROUND
[0003] Silicon chips are generally assembled using flip chip bonding or wire bonding. Flip chip bonding is a method for interconnecting semiconductor devices to external circuitry (e.g., a circuit board or another chip or wafer), with solder bumps that have been deposited onto chip pads. The solder bumps are deposited on the chip pads on a top side of the wafer during a final wafer processing step. In order to mount the chip to external circuitry it is flipped over so that its top side faces down, and aligned so that its pads align with matching pads on an external circuit. The solder bumps are then melted to complete interconnects. In wire bonding, the chip is mounted to external circuitry in an upright position and wires are used to interconnect the chip pads to external circuitry. However, these silicon chip assembly methods are not suitable for assembling silicon chips on or within a contact lens. Furthermore, standard chips are too thick to fit onto a contact lens.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] FIGs. 1A and IB present alternative perspectives of an example contact lens having a silicon chip integrated therein/thereon in accordance with aspects described herein.
[0005] FIGs. 2A-2C present cross-sectional views of example embodiments of a contact lens having a silicon chip integrated therein in accordance with aspects described herein. [0006] FIG. 3 depicts a process for creating silicon chips that can be assembled onto a contact lens in accordance with aspects described herein.
[0007] FIG. 4 illustrates a high level overview of processes by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
[0008] FIGs. 5A-5E illustrate an exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
[0009] FIGs. 6A-6D illustrate another an alternative perspective of exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
[0010] FIGs. 7A-7D illustrate another exemplary process 700 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
[0011] FIGs. 8A-8D illustrate another an alternative perspective of exemplary process 800 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
[0012] FIGs. 9A-9D illustrate another exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
[0013] FIGs. 10A-10D illustrate another an alternative perspective of exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate in accordance with aspects described herein.
[0014] FIGs. 1 1A-1 1C illustrate a process for employing a contact lens substrate having a silicon chip bonded thereon to form a contact lens in accordance with aspects described herein.
[0015] FIG. 12A presents an alternative, three-dimensional view of a contact lens form in accordance with aspects described herein.
[0016] FIG. 12B depicts the final processing of a contact lens form to form a contact lens in accordance with aspects described herein.
[0017] FIG. 13 presents a exemplary methodology by which a silicon chip is assembled onto and/or within a contact lens in accordance with aspects described herein.
[0018] FIG. 14 presents another exemplary methodology by which a silicon chip is assembled onto and/or within a contact lens in accordance with aspects described herein. [0019] FIG. 15 presents another exemplary methodology by which a silicon chip is assembled onto and/or within a contact lens in accordance with aspects described herein.
DETAILED DESCRIPTION
[0020] Various aspects are now described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a more thorough understanding of one or more aspects. It is evident, however, that such aspects can be practiced without these specific details. In other instances, structures and devices are shown in block diagram form in order to facilitate describing one or more aspects.
[0021] In one or more aspects, the disclosed subject matter relates to methods for manufacturing a contact lens having an integrated circuit integrated therein or thereon. In an aspect, the method involves creating a plurality of lens contact pads on a lens substrate and creating a plurality of chip contact pads on an integrated circuit element or chip, such as a silicon chip. Assembly bonding material is then applied to the plurality of lens contact pads or the plurality of chip contact pads. The chip is then bonded to the lens substrate via the assembly bonding material whereby the lens contact pads are aligned with the chip contact pads.
[0022] After the chip is bonded to the lens substrate, the lens substrate is formed into a contact lens. In an aspect, prior to forming the lens substrate into a contact lens, the chip is sealed onto the lens substrate. The lens substrate is then cut into a ring shape and molded to match curvature of an eye over which the contact lens is to be worn. The molded lens substrate is then embedded into a hydrogel to form the contact lens.
[0023] In some aspects, the plurality of chip contact pads are formed as metal lines on the chip using photolithography. Similarly, the plurality of lens contact pads can be formed as metal lines on the lens substrate using photolithography. Yet in other aspects, the plurality of lens contact pads are formed as a plurality of metal squares having a length of about 100 microns or less.
[0024] The subject methods enable assembly of thin silicon chips within a contact lens without use of bumped pads and standard chips. In some embodiments, the disclosed methods involve thinning a silicon ship substrate down to a thickness of less than about 100 microns (e.g., within the range of 20-100 microns thick) and then dicing the thinned substrate into chips smaller than 1 mm on each side. It is to be appreciated that these noted ranges/sizes are merely exemplary, and any suitable thickness or size can be employed in accordance with embodiments described herein. Metal lines are patterned onto a chip and/or a lens substrate to create contact pads for the chip and/or the lens substrate. The metal lines also serve as wires to connect other chips and/or other electrical components of the contact lens (e.g. antennas, sensors, light illuminating diodes (LEDS), and etc.).
[0025] In various embodiments, in order to assemble a chip to the lens substrate, a small amount of low temperature assembly bonding material is placed onto contact pads of either the lens substrate or the chip using a syringe. The contact pads of the chip are then aligned with the contact pads of the lens substrate and the chip is bonded to the lens substrate using the solder material. For example, the lens substrate can include multiple contact pads that can be segmented into multiple assembly sites for assembling a chip thereto. Once respective contact pads of a particular assembly site on the lens substrate are covered with solder material, the contact pads of the chip are aligned with the lens substrate contact pads in the assembly site and the chip is bonded to the assembly site using a flip-chip bonder. The flip-chip bonder tool aligns the chip contact pads with the lens substrate contact pads and applies pressure along with temperature to create a mechanical and electrical connection between the chip and the lens substrate.
[0026] After the chip is bonded to the lens substrate, the chip can be sealed onto the lens substrate with a substance (e.g. parylene) to make the lens substrate biocompatible and to hold the chip in place. The lens substrate can then be formed into a contact lens. For example, in an aspect, the lens substrate is cut into a ring shape. The ring shape can include indentations on the inner and/or outer edges of the ring to facilitate molding of the ring and to reduce wrinkling. The ring is then molded to match curvature of the eye. The ring is further embedded into hydrogel to complete the contact lens assembly process.
[0027] FIGs. 1A and IB depict various perspectives of an example contact lens 100 having an integrated circuit or chip 102 integrated therein/thereon. As used herein, the terms integrated circuit and chip are used interchangeably. FIG. 1A illustrates a three dimensional image of example contact lens 100, and FIG. IB presents a cross-sectional view of example contact lens 100 being worn over an eye 104. Contact lens 100, and additional contact lenses disclosed herein are generally provided in a spherical shape that conforms to shape of an eye.
[0028] With reference to FIG. IB, contact lens 100 includes two primary surfaces, an inner surface 108 and an outer surface 106, both of which are spherical. The inner surface 108 is concave and is adjacent to/rests on, a surface of the eye 104. The outer surface 106 is convex and opposite the inner surface 108. The contact lens 100 has a thickness that spans in a horizontal direction between inner surface 106 and outer surface 104. Chip 102 is located within a thickness of the contact lens 102. In general aspects, as illustrated in FIG. IB the width of the lens is thickest (relative to the width of the lens at other areas of the lens) at a center point of the lens, tapering outwardly to a knifelike edge at the perimeter of the lens. The particular dimensions (including dimensions attributable to thickness, diameter, curvature, and etc.) of the subject contact lenses are not critical and may vary.
[0029] As generally described herein, chip 102 is silicon chip that can be employed by contact lens 100 to facilitate electrical operations of the contact lens. In particular, chip 102 can perform various computing and logic functions of contact lens 102. Further, although not shorn in the figures, it is to be appreciated that contact lenses disclosed herein can include multiple electrical components that connect to silicon chip 102. For example, contact lenses disclosed herein can include sensors, antennas, LEDs, power sources, and etc. In addition, although contact lens 100 (and additional contact lenses described herein) is depicted having a single silicon chip 102, it should be appreciated than contact lens 100 (and additional contact lenses described herein) can be provided having a plurality of chips 102 integrated therein.
[0030] In an embodiment, silicon chip 102 is a piece of almost pure silicon having a size smaller than standard silicon chips employed in standard computing devices. For example, while most computing devices employ silicon chips that are one square centimeter and have a thickness of about 1 millimeter, chip 102 can have a size of about 1 square millimeter and a thickness less than 100 microns. In an aspect, silicon chip 102 contains a plurality (up to millions) of transistors and other small electronic circuit components, packed and interconnected in layers beneath the surface of the chip. The surface of the silicon chip can further include a grid of metallic lines etched thereon which are used to make electrical connections to other components of the chip 102 and/or the contact lens 100
[0031] FIGs 2A-2C present cross-sectional views of example embodiments of a contact lens having silicon chip 206 integrated therein in accordance with aspects described herein. The contact lenses depicted in FIGs. 2A, 2B, and 2C, lenses 200, 202, and 204 respectively, respectively have two or more layers where silicon chip 206 is integrated within one of the layers. The lenses 200, 202, and 204 are formed by first integrating silicon chip 206 into a lens substrate layer 214 and then forming one or more additional contact lens layers 216 on and/or around the lens substrate layer 214. In particular, as described in detail infra, chip 206 is first assembled onto a lens substrate 214. In an aspect, the lens substrate is then molded into a lens shape to fit the contours of the eye 208 and combined within a contact lens material (e.g. hydrogel) to form the contact lens.
[0032] The lens substrate layer 214 having the silicon chip 206 and the contact lens material layer 216 can be combined in a variety of manners. In an aspect, in order to combine the lens substrate layer 214 and the contact lens material layer 216, the lens substrate can be dipped into liquid contact lens material 216. In another aspect, in order to combine the lens substrate layer 214 and the contact lens material layer 216, the lens substrate 214 can be coated/covered with lens contact material 216 on one or both sides of the lens substrate. Still in other aspects, in order to combine the lens substrate layer 214 and the contact lens material layer 216, the lens substrate 214 can be pressed into and/or bonded with one or more layers of lens contact material 216.
[0033] The lens substrate layer 214 and the lens material layer(s) 216 can include various materials. In an aspect, the lens substrate layer 214 and the lens material layer 216 comprise the same material. In another aspect, the lens substrate layer 214 and the lens material layer comprise different materials. The lens substrate layer 214 can include any suitable material that enables fixation of contact pads to the material (e.g. metal pads and/or metal lines) and fixation of a chip 206 to the contact pads.
[0034] Some exemplary material that can be employed as the lens substrate layer material 214 include but are not limited to a soft polymer material including but not limited to, a hydrogel, a silicone based hydrogel, a polyacrlyamide, or a hydrophilic polymer. For example, in an aspect, contact lens substrate layer 214 is formed from a substrate material that includes at least one of a crosslinked hydrogel comprising hydrophilic monomers (e.g. N-Vinylpyrrolidone, 1 -Ethenyl-2-pyrrolidone,N,N- dimethylacrylamide, 2 -hydroxy ethyl methacrylate , hydroxy ethyl aery late , methacrylic acid and acrylic acid), a strengthening agent, a ultraviolent light (UV) blocker, or a tint. In another aspect, contact lens substrate layer 214 is formed from a substrate material that includes at least of a one silicone hydrogel (e.g. crosslinked hydrogels containing silicone macromers and monomers, as well as hydrophilic monomers that absorb water). In yet another aspect, contact lens substrate layer 214 is formed from a substrate material that includes one or more rigid materials including but not limited to, a silicone polymer, polymethyl methacrylate, or rigid gas permeable materials.
[0035] The lens material layer 216 can include any suitable material that provides support for the lens substrate layer 214, contain/embed the lens substrate layer 214 and/or otherwise form a structural and/or functional body of the contact lens. Some exemplary materials that can be employed as the lens material layer 216 can include but are not limited to a soft polymer material including but not limited to, a hydrogel, a silicone based hydrogel, a polyacrlyamide, or a hydrophilic polymer. For example, in an aspect, lens material layer 216 is formed from a substrate material that includes at least one of a crosslinked hydrogel comprising hydrophilic monomers (e.g. N- Vinylpyrrolidone, 1 -Ethenyl-2-pyrrolidone,N,N-dimethylacrylamide, 2 -hydroxy ethyl methacrylate , hydroxyethyl acrylate , methacrylic acid and acrylic acid), a strengthening agent, a ultraviolent light (UV) blocker, or a tint. In another aspect, lens material layer 216 is formed from a substrate material that includes at least of a one silicone hydrogel (e.g. crosslinked hydrogels containing silicone macromers and monomers, as well as hydrophilic monomers that absorb water). In yet another aspect, lens material layer 216 is formed from a substrate material that includes one or more rigid materials including but not limited to, a silicone polymer, polymethyl methacrylate, or rigid gas permeable materials.
[0036] As illustrated in FIG. 2 A, in an aspect, the lens substrate layer 214 is located at an outer surface 210 of the contact lens 200 and the lens material layer 216 is located at an inner surface 212 of the contact lens 200. According to this aspect, contact lens 200 can include two layers, lens substrate layer 214 and a lens material layer 216. The lens substrate layer 214 includes the silicon chip and the silicon chip can further be located at/on the outer surface 210 of the contact lens. In an example, in order to form contact lens 200, silicon chip 206 is first integrated onto lens substrate layer 214 and then the lens substrate layer 214 is coated on its concave side with contact lens material 216.
[0037] As shown in FIG. 2B, in another aspect, the lens substrate layer 214 is located at an inner surface 212 of contact lens 202 and the lens material layer 216 is located at an outer surface 210 of the contact lens 202. According to this aspect, contact lens 202 can also include two layers, lens substrate layer 214 and a lens material layer 216. The lens substrate layer 214 includes the silicon chip 206 and the silicon chip can further be located at/on the inner surface 212 of the contact lens 202. In an example, in order to form contact lens 202, silicon chip 206 is first integrated onto lens substrate layer 214 and then the lens substrate layer 214 is coated on its convex side with contact lens material 216.
[0038] As seen in FIG. 2C, in yet another aspect, contact lens 204 includes a lens substrate layer 214 located between two layers of lens material 216. According to this aspect, contact lens 204 can also include three layers. The lens substrate layer 214 includes the silicon chip 206 and thus the silicon chip is located suspended between the inner surface 212 and the outer surface 210 of the contact lens 204. In an example, in order to form contact lens 204, silicon chip 206 is first integrated onto lens substrate layer 214 and then the lens substrate layer 214 is dipped into or otherwise entirely coated/embedded within, contact lens material 216.
[0039] With reference now to FIG. 3, illustrated is a process 300 for creating silicon chips that can be assembled onto a contact lens in accordance with aspects described herein. A silicon chip substrate 301 is first thinned down to a thickness of less than 100 microns. In an aspect, the silicon chip substrate 301 is thinned down to a thickness of less than 75 microns. In another aspect, the silicon chip substrate 301 is thinned down to a thickness of less than 50 microns. Still, in yet another aspect, the silicon chip substrate 301 is thinned down to a thickness of less than 35 microns. The thinned silicon chip substrate 302 is then diced into a plurality of silicon chips 304 having a size suitable for integration into a contact lens. In particular, the size and shape of the chip 304 is restricted by thickness and curvature of a contact lens in which it is to be integrated. A chip 304 can have a rectangular shape or a square shape. In an aspect, a chip 304 can have sides less than 15 mm. In another aspect, a chip 304 can have sides less than 10 mm. In another aspect, a chip 304 can have sides less than 5.0 mm. Still in yet another aspect, a chip 304 can have sides less than 1.0 mm. [0040] FIGs. 4-10D illustrate exemplary embodiments of processes by which a chip 304 is assembled onto a contact lens substrate 418 in accordance with aspects described herein. FIG. 4 illustrates a high level overview of processes by which a chip 304 is assembled onto a contact lens substrate 418 while FIGs. 5A-10D illustrate detailed steps in various processes by which a chip 304 is assembled onto a contact lens substrate 418. After one or more chips have been assembled onto contact lens substrate 418, the contact lens substrate can be modified into a contact lens. In particular, the contact lens substrate 418 can be molded into the shape of a contact lens to become the contact lens substrate layer (e.g. layer 214) in an assembled contact lens (e.g. lenses 200, 202, 204 and the like). In various aspects, the contact lens substrate 418 can include one or more of the structure and/or functionality of contact lens substrate layer 214 (and vice versa). In particular, it should be appreciated that contact lens substrate 418 can comprise the materials described with reference to contact lens substrate layer 214.
[0041] Turning initially to FIG. 4, a silicon chip 304 that has been sized to a suitable size for integration into a contact lens (e.g. having a thickness less than 100 microns and sides less than about 1 mm) is depicted having metal lines 402 provided thereon. In particular, after a silicon chip 304 is created via process 300, prior to integration onto a contact lens substrate 418, the silicon chip 304 can be processed to form various functional features of the silicon chip, including at least chip contact pads. Chip contact pads provide the contact point for electrically connecting a chip 304 to substrate 418 and/or other electrical component. In an aspect, traditional metal chip contact pads (not depicted) can be created on a surface of chip 304. For example, metal chip pads in the form of small and thin sheets of metal in the shape of squares or rectangles can be formed on a surface of the chip 304 to create the chip contact pads. Such metal contact pads can have sides less than 100 microns.
[0042] However, in another aspect, as depicted in FIG. 4, metals lines 402 are patterned onto a surface of chip 304. For example, metal lines 402 can be patterned onto a surface 406 of a chip 304 using photolithography. These metal lines 402 serve as chip contact pads for the chip 304 and also serve as wires to connect the chip 304 to other chips and/or components of a contact lens (e.g. antennas, sensors, LEDs, and etc.) in which the chip 304 is integrated. For example, intersection points 404 of metal lines 402 can serve as the chip contact pads of chip 304. However, it should be appreciated that any point of a metal line 402 can serve as a chip contact pad. In addition, although intersecting parallel metal lines 402 are shown forming a grid pattern on chip 304, such a line configuration is merely depicted for exemplary purposes. In particular, lines 402 can be formed in any pattern, in includes patterns having non-intersecting lines and patterns having non-parallel lines.
[0043] In an aspect, the surface of chip 304 on which the metal lines are formed, surface 406, is a substantially flat polymer layer provided on the chip 304. According to this aspect, the metal lines 402 are patterned onto the substantially flat polymer layer using photolithography. For example, the polymer layer can include but is not limited to parylene, polyimide, and polyethylene terephthalate (PET).
[0044] Contact lens substrate 418 is also presented having lens contact pads located on a surface thereof. In an aspect, lens contact pads provide the contact points for electrically and/or physically connecting the substrate 418 with the chip 304 and/or electrically connecting other electrical components provided within a contact lens in which the lens substrate 418 is integrated, to the chip 304. In an aspect, traditional metal chip contact pads 414 can be created on a surface of lens substrate 418. For example, metal chip pads in the form of small and thin sheets of metal in the shape of squares or rectangles can be formed on a surface of the lens substrate 418 to create the lens contact pads. Such metal contact pads can have sides less than 100 microns.
[0045] However, in another aspect, metals lines 416 are patterned onto a surface of contact lens substrate 418 in a same or similar fashion as metal lines 402 patterned on chip 304. For example, metal lines 416 can be patterned onto a surface of lens substrate 418 using photolithography. As with metal lines 402, metal lines 416 can serve as lens contact pads for the lens substrate 418 and also serve as wires to connect the chip 304 to other chips and/or components of a contact lens (e.g. antennas, sensors, LEDs, and etc.) in which the chip 304 is integrated. In addition, although intersecting parallel metal lines 416 are shown forming a grid pattern on substrate 418 such a line configuration is merely depicted for exemplary purposes. In particular, lines 416 can be formed in any pattern, in includes patterns having non-intersecting lines and patterns having non- parallel lines.
[0046] In an aspect, the lens substrate and/or a surface of lens substrate 418 on which the metal lines 416 are formed is a substantially flat polymer layer. According to this aspect, the metal lines 416 are patterned onto the substantially flat polymer layer using photolithography. For example, the polymer layer can include but is not limited to parylene, polyimide, and polyethylene terephthalate (PET).
[0047] It should be appreciated that both traditional metal contact pads 414 and metal line contact pads 416 are provided on lens substrate 418 merely for exemplary purposes. Further, although only a partial area of the lens substrate 418 is presented having contact pads thereon, it should be appreciated that any portion of the substrate 418 can be provided with contact pads. For example, the entire surface of the substrate 418 can be patterned with metal lines or square metal pads. According to this example, a subset of the metal lines/metal pads can be selectively employed as the contact pads for assembly of a chip thereon. In other words, a subset of the metal lines/metal pads can be selectively employed as an assembly site for assembly of a chip thereon and the substrate can be provided with a plurality of potential assembly sites. As used herein, the term assembly site refers to an area of substrate 418 having lens contact pads that can be aligned with the contact pads of a chip.
[0048] In order to attach silicon chip 304 to contact lens substrate 418, an assembly bonding material (not shown) is applied to either the chip or the lens substrate 418. In an aspect, the assembly bonding material includes an anisotropic conductive film (ACF) or an anisotropic conductive paste (A CP). ACF and ACP are materials that establish a conducting path when pressed between two metal pads, such as a lens contact pad and a chip contact pad. According to this aspect, an ACF or ACP is applied over an entire assembly site on the substrate 418 (and/or the chip) having lens (or chip) contact pads therein so as to cover the contact pads and the area between and around the contact pads. With this aspect, assembly bonding material does not need to be applied to the contact pads individually.
[0049] After application of the ACF or ACP, the silicon chip 304 is then flipped over, following arrow 408, so that the surface 406 of the silicon chip 304 having the chip contact pads (e.g. the surface having the metal lines 402) faces a surface of the contact lens substrate 418 having the lens contact pads thereon. Dashed lines 402 presented on flipped chip 304 are indicative of the metal lines 402 now on the underside 306 of the chip. The chip 304 is then lowered onto the substrate 418 and the chip contact pads are aligned with the lens contact pads. The chip 304 is then assembled onto the lens substrate via pressing the chip 304 onto the ACF or ACP and heating the chip 304/substrate 418 assembly to cure or solidify the chip 304 connection with the substrate 418. In particular, the ACP or ACF is activated in order to secure chip 304 to substrate 418 in part by the heating. For example, activation of an ACP or ACF can include boiling a flux out of the ACP or ACF to create a conductive path between the chip contact pads and lens contact pads and to create an adhesive (e.g. an underfill) material that bonds chip 304 to substrate 418. In an aspect, heating of the of the chip 304/substrate 418 assembly is performed so that conduction results in a single direction so that the contact pads do not short.
[0050] In another aspect, the assembly bonding material includes a solder solution or solder paste. According to this aspect, solder solution or solder paste (not shown) is applied to either the chip contact pads or the lens contact pads in a particular assembly site. In an aspect, the solder solution/paste is applied to respective ones of either the chip contact pads or the lens contact pads using a syringe. The silicon chip 304 is then flipped over, following arrow 408, so that the surface 406 of the silicon chip 304 having the chip contact pads (e.g. the surface having the metal lines 402) faces a surface of the contact lens substrate 418 having the lens contact pads thereon. Dashed lines 402 presented on flipped chip 304 are indicative of the metal lines 402 now on the underside 306 of the chip. The chip 304 is then lowered onto the substrate 418 and the chip contact pads are aligned with the lens contact pads. Head and pressure are then applied to at least one of the chip 304 or the lens substrate 418 so that the solder solution is flowed and solidified so as to bond the chip 304 to the lens substrate 418. Arrow 410 shows an example where the chip 304 is bonded to an assembly site on the substrate 418 that comprises metal squares as contact pads. Arrow 412 shows an example where the chip 304 is bonded to an assembly site on the substrate 418 that comprises metal lines as contact pads.
[0051] In some aspects, an underfill is applied to the lens substrate/chip complex in order to hold the chip 304 onto the substrate 418. In particular, connections established between the chip 304 and the substrate 418 can be relatively weak when using a solder solution/paste as the assembly bonding material. Accordingly, an underfill material can be applied between the chip 304 and the substrate so as to flow around the respective solder pads and solidified solder material to further facilitate bonding of the chip 304 to the substrate. The underfill can include a non-conductive or substantially non- conductive material such as an epoxy or adhesive. [0052] In an aspect, flipping 408, alignment of chip 304 with contact pads on lens substrate 418, and bonding is performed using a flip chip bonder. As used herein, the term flip chip bonder refers to a tool that performs functions and features of traditional flip chip bonding methods, including at least flipping of chip 304, alignment of chip 304 with substrate 418, and application of heat and pressure to chip 304 and substrate 418 such that the chip 304 and the substrate 418 bond via the solder solution provided there between.
[0053] In an aspect, the assembly bonding material that is applied to the lens substrate or chip is a low activation temperature material. For example, in some aspects, the assembly bonding material includes an ACF or an ACP that has a low activation temperature, such as below 200° C. In other aspects, the assembly bonding material includes a solder material that has a low melting point, such as below 200° C. In another aspect, the assembly bonding material can have an activation temperature or boiling point less than 150° C. In another aspect, the assembly bonding material can have an activation temperature or boiling point less than 100° C. In yet another aspect, the assembly bonding material can have an activation temperature or boiling point less less than 85° C. Still in yet another aspect, the assembly bonding material can have an activation temperature or boiling point less than 65° C.
[0054] Some exemplary low temperature solder solutions/pastes that can be employed as the assembly bonding material can include but are not limited to solutions or pastes having varying ratios of indium, tin, and/or bismuth. For example, indium alloy number 19 from Indium Corp. can be employed as an exemplary solder solution and has a ration of 51% In, 32.5% Bi, and 16.5 Sn with a melting temperature of about 60 0 C. In an aspect, an employed solder solution/paste is lead-free so as not to disrupt an eye in which a contact lens, having a chip 304 integrated therein, is worn. In some aspects, the solder solution can also be mixed with a flux or acidic solution (such as HCL and water) to prevent or reduce oxidation of the solder solution. Some exemplary fluxes can include but are not limited to TACFlux® 020B and Indalloy Flux #4-OA from Indium Corp. Additionally, a commercially available solder solution can be employed as the assembly bonding material that is formed as a paste suspended in a solder solution, such NC-SMQ®90 Solder Paste from Indium Corp.
[0055] Looking now to FIGs. 5A-5E, illustrated is an exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein. In FIGs. 5A-5E, it should be appreciated that only a portion of contact lens substrate 418 is presented for exemplary purposes. Process 500 follows in part, arrow 410 of FIG. 4. In particular, process 500 present an embodiment where chip 304 is bonded to an assembly site on the substrate 418 that comprises metal squares 414 as contact pads.
[0056] As seen in FIG. 5A, a contact lens substrate 418 is provided having a plurality of metal square contact pads 414 created thereon. A chip 304 is assembled to substrate 418 using either solder solution according to FIG. 5B or a solder film or paste including ACF or ACP respectively according to FIG. 5C. Accordingly, process 500 can proceed with steps according to FIG. 5B or according to FIG. 5C.
[0057] In FIG. 5B, solder solution 502 is applied to each of the lens contact pads 414. (The solder solution 502 is represented by the darkening of the lens contact pads 414 as compared to the lens contact pads 414 of FIG. 5 A). In an aspect, the solder solution 502 is selectively applied to each of the lens contact pads 414 using a syringe, pipette, needle, or other precise applicator tool. Then a chip 304 having chip contact pads in the form of metal lines 402 is flipped over and aligned with lens substrate 418. In particular, the chip contact pads, (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414 having solder solution 502 thereon.
[0058] In FIG. 5C, (the alternative to FIG. 5B), an ACF or ACP 506 is applied to the lens substrate 418 so as to cover the lens contact pads 414 and the area around the respective lens contact pads 414 in the assembly site. Then a chip 304 having chip contact pads in the form of metal lines 402 is flipped over and aligned with lens substrate 418. In particular, the chip contact pads, (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414 having an ACF or ACP thereon.
[0059] In FIG. 5D, the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution or the ACF/ACP in response to the application of pressure and/or heat. For example, a flip chip bonder can perform the flipping, aligning and bonding aspects of method 500. In an aspect, heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate. In FIG. 5E, once the solder solution or ACF/ACP has been solidified, hardened and/or cured, in an aspect, the chip 304 can be sealed onto the lens substrate 418 using a sealant 504. The sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible. In an aspect, (not shown), the entire substrate/chip complex can be coated in a sealant 504. For example, the entire substrate/chip complex can be dipped or rinsed with a sealant 504. In an aspect, the sealant 504 is parylene or polyimide.
[0060] FIGs. 6A-6D, illustrate an alternative perspective of exemplary process 500 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein. In particular, FIGs. 6A-6D present cross-sectional views of chip 304 and lens 418 during process 500.
[0061] As seen in FIG. 6A, a contact lens substrate 418 is provided having a plurality of metal square contact pads 414 created thereon. In FIG. 5B, solder solution 502 is applied to each of the lens contact pads 414. In an aspect, the solder solution 502 is selectively applied to each of the lens contact pads 414 using a syringe, pipette, needle, or other precise applicator tool. Then a chip 304 having chip contact pads 402 is aligned with lens substrate 418. In particular, the chip contact pads 402 are aligned with each of the lens contact pads 414 having solder solution 502 thereon. In an aspect, the chip contact pads 402 are the intersection points 404 of the metal lines 402 as presented on chip 304 in FIG. 4.
[0062] In FIG. 6C, the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat. In an aspect, heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause limited damage to the remaining area of the substrate. For example, a flip chip bonder can perform the flipping, aligning and bonding aspects of method 500. In an aspect, an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418. In FIG. 6D, once the solder solution has been solidified, hardened and/or cured, in an aspect, the chip 304 can be sealed onto the lens substrate 418 using a sealant 504. The sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible. In an aspect, (not shown), the entire substrate/chip complex can be coated in a sealant 504. For example, the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
[0063] Looking now to FIGs. 7A-7D, illustrated is another exemplary process 700 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein. In FIGs. 7A-7D, it should be appreciated that only a portion of contact lens substrate 418 is presented for exemplary purposes. Process 700 follows in part, arrow 412 of FIG. 4. In particular, process 700 present an embodiment where chip 304 is bonded to an assembly site on the substrate 418 that comprises metal lines 416 as contact pads.
[0064] As seen in FIG. 7A, a contact lens substrate 418 is provided having a plurality of metal lines 416 created thereon. The metal lines 416 serve as the lens contact pads. In an aspect, the intersection point of the metal lines in particular serve as the lens contact pads. According to this aspect, solder solution 502 is applied to the lens contact pads 416 at each metal line intersection point. In an aspect, the solder solution 502 is selectively applied to each of the lens contact pads 416 using a syringe, pipette, needle, or other precise applicator tool. In FIG. 7B, a chip 304 having chip contact pads in the form of metal lines 402 is flipped over and aligned with lens substrate 418. In particular, the chip contact pads, (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 416, the metal line 416 intersection points, having solder solution 502 thereon.
[0065] In FIG. 7C, the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat. In an aspect, heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate. For example, a flip chip bonder can perform the flipping, aligning and bonding aspects of method 700. In an aspect, an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418. In FIG. 7D, once the solder solution has been solidified, hardened and/or cured, in an aspect, the chip 304 can be sealed onto the lens substrate 418 using a sealant 504. The sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible. In an aspect, (not shown), the entire substrate/chip complex can be coated in a sealant 504. For example, the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
[0066] FIGs. 8A-8D, illustrate an alternative perspective of exemplary process 700 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein. In particular, FIGs. 8A-8D present cross-sectional views of chip 304 and lens 418 during process 700.
[0067] As seen in FIG. 8A, a contact lens substrate 418 is provided having a plurality of contact pads 416 created thereon. The contact pads 416 are formed from metal lines such as metal lines 416 that have been patterned onto the lens substrate 418 via photolithography. In an aspect, the contact pads 416 include intersection points of metal lines 416 as depicted in FIG. 4. The contact pads 416 further have solder solution 502 applied thereto. In an aspect, the solder solution 502 is selectively applied to each of the lens contact pads 416 using a syringe, pipette, needle, or other precise applicator tool. In FIG. 8A, a chip 304 having chip contact pads 402 is aligned with lens substrate 418. In particular, the chip contact pads 402 are aligned with each of the lens contact pads 416 having solder solution 502 thereon. In an aspect, the chip contact pads 402 are similarly intersection points 404 of the metal lines 402 as presented on chip 304 in FIG. 4.
[0068] In FIG. 8C, the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat. In an aspect, heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate. For example, a flip chip bonder can perform the flipping, aligning and bonding aspects of method 700. In an aspect, an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418. In FIG. 8D, once the solder solution has been solidified, hardened and/or cured, in an aspect, the chip 304 can be sealed onto the lens substrate 418 using a sealant 504. The sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible. In an aspect, (not shown), the entire substrate/chip complex can be coated in a sealant 504. For example, the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
[0069] Looking now to FIGs. 9A-9D, illustrated is another exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein. In FIGs. 9A-9B, it should be appreciated that only a portion of contact lens substrate 418 is presented for exemplary purposes. Process 900 presents an embodiment where chip 304 is bonded to an assembly site on the substrate 418 that comprises metal square 414 as contact pads and where the bonding solution is applied to the chip contact pads.
[0070] As seen in FIG. 9A, a silicon chip 304 is provided having a plurality of metal lines 402 created thereon. The metal lines 402 serve as the chip contact pads. In an aspect, the intersection points of the metal lines in particular serve as the chip contact pads. According to this aspect, solder solution 502 is applied to the chip contact pads 402 at each metal line intersection point. In an aspect, the solder solution 502 is selectively applied to each of the chip contact pads 402 using a syringe, pipette, needle, or other precise applicator tool. The chip is 304 is further flipped over following arrow 408 so that the chip contact pads having the solder solution applied thereto can face a surface of the lens substrate 418 having contact pads 414 thereon. The dashed lines on flipped chip 304 are indicative of the chip contact pads now on the underside 406 of the chip.
[0071] In FIG. 9B, the flipped chip 304 having the chip contact pads with solder applied is aligned with lens substrate 418. In particular, the chip contact pads, (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414. Lens substrate 418 is provided having contact pads 414 located thereon. Although lens contact pads 414 are presented as metal squares, it should be appreciated that the lens contact pads can be in the form of metal lines.
[0072] In FIG. 9C, the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat. In an aspect, heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate. For example, a flip chip bonder can perform the flipping, aligning and bonding aspects of method 900. In an aspect, an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418. In FIG. 9D, once the solder solution has been solidified, hardened and/or cured, in an aspect, the chip 304 can be sealed onto the lens substrate 418 using a sealant 504. The sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible. In an aspect, (not shown), the entire substrate/chip complex can be coated in a sealant 504. For example, the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
[0073] FIGs. 10A-10D, illustrate an alternative perspective of exemplary process 900 by which a silicon chip is assembled onto a contact lens substrate 418 in accordance with aspects described herein. In particular, FIGs. 10A-10D present cross-sectional views of chip 304 and lens 418 during process 900.
[0074] As seen in FIG. 10A, a silicon chip 304 is provided having a plurality of metal lines 402 created thereon. The metal lines 402 serve as the chip contact pads. In an aspect, the contact pads 402 are the intersection points of the metal lines 402 (point 404) as presented in FIG. 4. According to this aspect, solder solution 502 is applied to the chip contact pads 402 at each metal line intersection point. In an aspect, the solder solution 502 is selectively applied to each of the chip contact pads 402 using a syringe, pipette, needle, or other precise applicator tool. The chip is 304 is further flipped over following arrow 408 so that the chip contact pads having the solder solution applied thereto can face a surface of the lens substrate 418 having contact pads 414 thereon.
[0075] In FIG. 10B, the flipped chip 304 having the chip contact pads with solder applied is aligned with lens substrate 418. In particular, the chip contact pads, (such as the intersection points of the metal lines 402), are aligned with each of the lens contact pads 414. Lens substrate 418 is provided having contact pads 414 located thereon. Although lens contact pads 414 are presented as metal squares, it should be appreciated that the lens contact pads can be in the form of metal lines.
[0076] In FIG. IOC, the chip 304 is lowered onto the lens substrate 418 and the chip is bonded to the lens substrate via the solder solution in response to the application of pressure and/or heat. In an aspect, heat is applied at a temperature less than 200° C to substantially only the area of the substrate 418 where the chip 304 is being assembled (e.g. the assembly sites) so as to cause no or limited damage to the remaining area of the substrate. For example, a flip chip bonder can perform the flipping, aligning and bonding aspects of method 900. In an aspect, an underfill material (not shown) can be applied between the lens substrate 418 and the chip 304 so as to fill in gaps between the solidified solder material and further adhere the chip 304 to the substrate 418. In FIG. 10D, once the solder solution has been solidified, hardened and/or cured, in an aspect, the chip 304 can be sealed onto the lens substrate 418 using a sealant 504. The sealant 504 can cover and/or otherwise coat the chip 304 to hold the chip 304 in place on the lens substrate 418 and/or to make the lens substrate/chip complex biocompatible. In an aspect, (not shown), the entire substrate/chip complex can be coated in a sealant 504. For example, the entire substrate/chip complex can be dipped or rinsed with a sealant 504.
[0077] Referring now to FIGs. 1 lA-1 1C, illustrated is a process for employing a contact lens substrate having a silicon chip bonded thereon to form a contact lens in accordance with aspects described herein. As seen in FIG. 11 A, a contact lens substrate 1 102 having a silicon chip 1104 bonded thereon is provided. In various aspects, the contact lens substrate 1102 and chip 1 104 can include one or more of the structure and/or functionality of contact lens substrate layer 214 and chip 206, and/or the contact lens substrate 418 and chip 304 (and vice versa). In an aspect, the chip 1 104 is sealed to the contact lens substrate 1102 via a sealant (e.g. parylene).
[0078] The contact lens substrate 1 102 is used to form a contact lens form 11 12. In an aspect, the contact lens substrate 1 102 is molded into a shape of a contact lens form 1 112. (e.g. a round and curved shape). In particular, the contact lens substrate 1102 is molded to match the curvature of an eye in which the contact lens is to be worn. In some aspects, in order to facilitate molding the contact lens substrate 1 102, the contact lens substrate 1 102 is cut into a shape that can be formed into the shape of a contact lens. For example, as seen in FIG. 1 IB, the contact lens substrate 1102 can be cut into a circular shape or ring shape 11 10. The cut substrate 11 10 shown in FIG. 1 IB is cut out of the contact lens substrate 1102 along dotted line pattern 1 106. The cut substrate 1 1 10 can include cut slits or incisions 1 108 on inner and/or outer edges of the ring to facilitate forming the cut substrate 1 110 into a contact lens shape. The cut substrate 1 110 is cut out of the contact lens substrate 1102 so as to include the attached chip 1104.
[0079] FIG. l lC shows a two-dimensional view of a contact lens form 1 112 formed out of contact lens substrate 1102. Contact lens form 11 12 includes chip 1104. In an aspect, contact lens form 1 112 is formed by closing off the incisions 1 108 of cut substrate 11 10. For example, the open edges of cut substrate 11 10 can be bended and brought together (e.g. following the dashed arrow of FIG. 1 IB) to form the contact lens form 1 112 of FIG. 11C.
[0080] FIG. 12A presents an alternative, three-dimensional view of contact lens form 1 112. In an aspect, contact lens form 11 12 can be employed as a finished, wearable/functional contact lens. Contact lens form matches the shape of a contact lens and forms to the curvature of the eye in which it is to be worn. Contact lens form further includes the chip 1 104 integrated thereon. However, in another aspect, contact lens form is further processed to form a finished, wearable/functional contact lens.
[0081] FIG. 12B depicts the final processing of contact lens form 1 112 to form a contact lens 1202. Contact lens 1202 comprises the contact lens 1 112 form embedded and/or coated on one or more sides with contact lens material 1204. In various aspects, the contact lens material 1204 can include one or more of the structure and/or functionality of lens material 216 (and vice versa). For example, in an aspect, the contact lens material 1204 is hydrogel, such as silicone hydrogel. Contact lens 1202 can also include one or more of the structure and/or functionality contact lenses 100, 200, 202, 204 (and vice versa). For example, contact lens 1202 can include contact lens form 1 112 entirely embedded in contact lens material 1204 and/or partially covered with contact lens material 1204. In an aspect, in order to form contact lens 1202, contact lens form 1 102 is dipped into a liquid contact lens material and then the contact lens material is allowed to solidify.
[0082] FIGs. 13-15 illustrates methodologies or flow diagrams in accordance with certain aspects of this disclosure. While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, the disclosed subject matter is not limited by the order of acts, as some acts may occur in different orders and/or concurrently with other acts from that shown and described herein. For example, those skilled in the art will understand and appreciate that a methodology can alternatively be represented as a series of interrelated states or events, such as in a state diagram. Moreover, not all illustrated acts may be required to implement a methodology in accordance with the disclosed subject matter. Additionally, it is to be appreciated that the methodologies disclosed in this disclosure are capable of being stored on an article of manufacture to facilitate transporting and transferring such methodologies to computers or other computing devices.
[0083] Referring now to FIG. 13, presented is a flow diagram of an example application of systems and apparatuses disclosed in this description in accordance with an embodiment. In an aspect, in exemplary methodology 1300, a contact lens is formed having a silicon chip integrated therein. At 1310, a plurality of chip contact pads are formed on a chip by forming a plurality of metal lines on a surface of the chip. (e.g. using photolithography). At 1320, solder solution is applied to each of a plurality of lens contact pads formed on a lens substrate (e.g. using a syringe). At 1330, the plurality of chip contact pads are bonded to the plurality of lens contact pads via the solder solution to bond the chip to the lens substrate (e.g. using a flip chip bonder). Then at 1340, the lens substrate is embedded into a hydrogel to form a contact lens.
[0084] Referring now to FIG. 14, presented is a flow diagram of another example application of systems and apparatuses disclosed in this description in accordance with an embodiment. In an aspect, in exemplary methodology 1400, a contact lens is formed having a silicon chip integrated therein. At 1410, a plurality of chip contact pads are formed on a chip by forming a plurality of metal lines on a surface of the chip. (e.g. using photolithography). At 1420, solder solution is applied to each of a plurality of lens contact pads formed on a lens substrate (e.g. using a syringe). At 1430, the plurality of chip contact pads are bonded to the plurality of lens contact pads via the solder solution to bond the chip to the lens substrate (e.g. using a flip chip bonder). At 1450, the lens substrate is sealed onto the chip (e.g. using a sealant 1504). At 1460, the lens substrate is cut into a ring shape and molded to match the curvature of an eye over which a contact lens is to be worn. Then at 1340, the lens substrate is embedded into a hydrogel to form the contact lens.
[0085] Referring now to FIG. 15, presented is a flow diagram of an example application of systems and apparatuses disclosed in this description in accordance with an embodiment. In an aspect, in exemplary methodology 1500, a contact lens is formed having a silicon chip integrated therein. At 1510, a plurality of chip contact pads are formed on a chip by forming a plurality of metal lines on a surface of the chip. (e.g. using photolithography). At 1520, solder solution is applied to each of the plurality of chip contact pads (e.g. using a syringe). At 1530, the plurality of chip contact pads are bonded to a plurality of lens contact pads via the solder solution to bond the chip to the lens substrate (e.g. using a flip chip bonder). Then at 1540, the lens substrate is embedded into a hydrogel to form a contact lens.

Claims

CLAIMS What is claimed is:
1. A method for manufacturing a contact lens having an integrated circuit, comprising:
creating a plurality of chip contact pads on a chip by forming a plurality of metal lines on a surface of the chip;
applying assembly bonding material to each of a plurality of lens contact pads formed on a lens substrate;
bonding the plurality of chip contact pads to the plurality of lens contact pads via the assembly bonding material to bond the chip to the lens substrate; and
embedding the lens substrate and the chip bonded thereon into a contact lens material to form the contact lens.
2. The method of claim 1, wherein the forming the plurality of metal comprises forming the plurality of metal lines using photolithography.
3. The method of claim 1, further comprising, prior to the embedding, sealing the chip on the lens substrate.
4. The method of claim 1, further comprising, prior to the embedding, cutting the lens substrate into a ring shape and molding the lens substrate to match a curvature of an eye over which the contact lens is to be worn.
5. The method of claim 1, wherein the chip has a thickness of about 100 microns or less and a length of aboutl .O millimeter or less.
6. The method of claim 1, wherein the contact lens material includes at least one of a hydrogel, a silicone hydrogel or a silicone elastomer.
7. The method of claim 1, wherein the bonding is performed employing a flip-chip bonder.
8. A contact lens having an integrated circuit disposed thereon or therein formed by a process comprising the steps of:
creating a plurality of chip contact pads on a chip by forming a plurality of metal lines on a surface of the chip;
applying assembly bonding material to each of the plurality of chip contact pads; bonding the plurality of the chip contact pads to a plurality of lens contact pads formed on a lens substrate via the assembly bonding material to bond the chip to the lens substrate; and
embedding the lens substrate having the chip bonded thereon into a contact lens material to form the contact lens.
9. The contact lens of claim 8, wherein the step of forming the plurality of metal lines comprises forming the plurality of metal lines using photolithography.
10. The contact lens of claim 8, wherein the process further comprises the step of, prior to the embedding, sealing the chip on the lens substrate.
1 1. The contact lens of claim 8, wherein the process further comprises the step of, prior to the embedding, cutting the lens substrate into a ring shape and molding the lens substrate to match a curvature of an eye over which the contact lens is to be worn.
12. The contact lens of claim 8, wherein the chip has a thickness of about 100 microns or less and a length of aboutl .O millimeter or less.
13. The contact lens of claim 8, wherein the bonding is performed employing a flip- chip bonder.
14. The contact lens of claim 8, wherein the contact lens material includes at least one of a hydrogel, a silicone hydrogel or a silicone elastomer.
15. A method for manufacturing a contact lens having an integrated circuit, comprising:
creating a plurality of lens contact pads on a lens substrate;
creating a plurality of chip contact pads on a chip;
applying assembly bonding material to the each of the plurality of lens contact pads or chip contact pads;
aligning the plurality of lens contact pads with the plurality of chip contact pads; bonding the chip to the lens substrate via the assembly bonding material using flip chip bonding; and
forming a contact lens with the lens substrate.
16. The method of claim 15, wherein the creating the plurality of the lens contact pads comprises forming a plurality of metal lines on the lens substrate using photolithography.
17. The method of claim 15, wherein the creating the plurality of the lens contact pads comprises forming a plurality of metal squares having a length of about 100 microns or less.
18. The method of claim 15, wherein the creating the plurality of the chip contact pads comprises forming a plurality of metal lines on the chip using photolithography.
19. The method of claim 15, wherein the forming the contact lens comprises:
sealing the chip on the lens substrate;
cutting the lens substrate into a ring shape and molding the lens substrate to match a curvature of an eye over which the contact lens is to be worn; and
embedding the lens substrate into a hydrogel.
20. The method of claim 15, wherein the chip has a thickness of about 100 microns or less and a length of aboutl .O millimeter or less.
21. The method of claim 15, wherein the bonding the chip to the lens substrate via the assembly bonding material comprises employing pressure and heat at a temperature of 200° C or less.
22. A contact lens comprising:
a substrate; and
a silicon chip embedded within the substrate, the silicon chip having a thickness of about 100 microns or less and a length of aboutl .O millimeter or less.
23. The contact lens of claim 22, wherein the silicon chip has a thickness of about 50 microns or less and a length of aboutl.O millimeter or less.
24. The contact lens of claim 22, wherein the substrate comprises at least one of a hydrogel, a silicone hydrogel or a silicone elastomer.
25. The contact lens of claim 22, wherein the chip is bonded to a polymer material embedded within the substrate and the chip is sealed on the polymer material with parylene.
PCT/US2013/059256 2012-09-26 2013-09-11 Assembling thin silicon chips on a contact lens WO2014052012A1 (en)

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KR1020177008009A KR102197561B1 (en) 2012-09-26 2013-09-11 Assembling thin silicon chips on a contact lens
JP2015534523A JP6121543B2 (en) 2012-09-26 2013-09-11 Assembling thin silicon chips on contact lenses
CN201380061505.2A CN104838308B (en) 2012-09-26 2013-09-11 In haptic lens over-assemble thin silicon wafer
EP13842053.4A EP2901207B1 (en) 2012-09-26 2013-09-11 Assembling thin silicon chips on a contact lens
EP20173904.2A EP3742220A1 (en) 2012-09-26 2013-09-11 Assembling thin silicon chips on a contact lens
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9836614B2 (en) 2012-09-27 2017-12-05 Intel Corporation Detecting, enforcing and controlling access privileges based on sandbox usage

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9812096B2 (en) 2008-01-23 2017-11-07 Spy Eye, Llc Eye mounted displays and systems using eye mounted displays
US10028824B2 (en) 2012-01-24 2018-07-24 Clarvista Medical, Inc. Modular intraocular lens designs, tools and methods
CA3177993A1 (en) 2012-01-24 2013-08-01 The Regents Of The University Of Colorado, A Body Corporate Modular intraocular lens designs and methods
US10080648B2 (en) 2012-01-24 2018-09-25 Clarvista Medical, Inc. Modular intraocular lens designs, tools and methods
US9364316B1 (en) 2012-01-24 2016-06-14 Clarvista Medical, Inc. Modular intraocular lens designs, tools and methods
US9696564B1 (en) * 2012-08-21 2017-07-04 Verily Life Sciences Llc Contact lens with metal portion and polymer layer having indentations
US8960899B2 (en) * 2012-09-26 2015-02-24 Google Inc. Assembling thin silicon chips on a contact lens
US9310626B2 (en) * 2013-03-15 2016-04-12 Johnson & Johnson Vision Care, Inc. Ophthalmic devices with organic semiconductor transistors
US9977256B2 (en) * 2013-05-30 2018-05-22 Johnson & Johnson Vision Care, Inc. Methods for manufacturing and programming an energizable ophthalmic lens with a programmable media insert
WO2015035357A1 (en) * 2013-09-09 2015-03-12 The General Hospital Corporation Dba Massachusetts General Hospital Remotely controllable lens device
US9993335B2 (en) 2014-01-08 2018-06-12 Spy Eye, Llc Variable resolution eye mounted displays
EP3107510B1 (en) 2014-02-18 2023-04-19 Alcon Inc. Apparatus for the removal of an intraocular lens
US10096802B2 (en) 2014-04-08 2018-10-09 International Business Machines Corporation Homogeneous solid metallic anode for thin film microbattery
US10004433B2 (en) * 2014-07-07 2018-06-26 Verily Life Sciences Llc Electrochemical sensor chip
US10105082B2 (en) 2014-08-15 2018-10-23 International Business Machines Corporation Metal-oxide-semiconductor capacitor based sensor
US9508566B2 (en) 2014-08-15 2016-11-29 International Business Machines Corporation Wafer level overmold for three dimensional surfaces
US10845620B2 (en) 2014-12-08 2020-11-24 Aleksandr Shtukater Smart contact lens
JP2018502639A (en) 2015-01-22 2018-02-01 アイゲート ファーマスーティカルズ,インコーポレイテッド Iontophoresis contact lens
EP3250152A1 (en) 2015-01-30 2017-12-06 Clarvista Medical, Inc. Modular intraocular lens designs
JP6512632B2 (en) * 2015-03-20 2019-05-15 デクセリアルズ株式会社 ANISOTROPY CONNECTED STRUCTURE AND METHOD FOR MANUFACTURING ANISOTROPY CONNECTED STRUCTURE
AU2016349363B2 (en) 2015-11-04 2022-01-27 Alcon Inc. Modular intraocular lens designs, tools and methods
US10162194B2 (en) 2016-03-01 2018-12-25 Verily Life Sciences Llc Eye mountable device and flexible assembly for fabrication thereof
US10353463B2 (en) 2016-03-16 2019-07-16 RaayonNova LLC Smart contact lens with eye driven control system and method
US11045309B2 (en) 2016-05-05 2021-06-29 The Regents Of The University Of Colorado Intraocular lens designs for improved stability
US10642068B2 (en) 2016-07-15 2020-05-05 Tectus Corporation Process for customizing an active contact lens
US11194179B2 (en) 2016-07-15 2021-12-07 Tectus Corporation Wiring on curved surfaces
US11099405B2 (en) 2016-09-17 2021-08-24 Raayon Nova LLC Master slave smart contact lens system
WO2018098436A1 (en) 2016-11-28 2018-05-31 Spy Eye, Llc Unobtrusive eye mounted display
EP3328166A1 (en) * 2016-11-29 2018-05-30 IMEC vzw Method for forming non-flat devices
US20180169905A1 (en) * 2016-12-16 2018-06-21 Coopervision International Holding Company, Lp Contact Lenses With Incorporated Components
US11382736B2 (en) 2017-06-27 2022-07-12 Alcon Inc. Injector, intraocular lens system, and related methods
US11143885B2 (en) * 2017-09-25 2021-10-12 Verily Life Sciences Llc Smart contact lens with antenna and sensor
US10673414B2 (en) 2018-02-05 2020-06-02 Tectus Corporation Adaptive tuning of a contact lens
US10505394B2 (en) 2018-04-21 2019-12-10 Tectus Corporation Power generation necklaces that mitigate energy absorption in the human body
US10838239B2 (en) 2018-04-30 2020-11-17 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US10895762B2 (en) 2018-04-30 2021-01-19 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US20190346692A1 (en) * 2018-05-09 2019-11-14 Johnson & Johnson Vision Care, Inc. Electronic ophthalmic lens for measuring distance using ultrasound time-of-flight
US10790700B2 (en) 2018-05-18 2020-09-29 Tectus Corporation Power generation necklaces with field shaping systems
JP6856184B2 (en) * 2018-05-25 2021-04-07 真一 芦田 An eye adapter for attaching an eye wearer, optical device, electronic device or other eye wearer to the eye
US11137622B2 (en) 2018-07-15 2021-10-05 Tectus Corporation Eye-mounted displays including embedded conductive coils
US10529107B1 (en) 2018-09-11 2020-01-07 Tectus Corporation Projector alignment in a contact lens
US10914945B2 (en) 2018-11-09 2021-02-09 Facebook Technologies, Llc Inconspicuous near-eye electrical circuits
US10838232B2 (en) 2018-11-26 2020-11-17 Tectus Corporation Eye-mounted displays including embedded solenoids
US10644543B1 (en) 2018-12-20 2020-05-05 Tectus Corporation Eye-mounted display system including a head wearable object
EP3757662B1 (en) * 2019-06-28 2022-06-01 Essilor International Optical article
US10944290B2 (en) 2019-08-02 2021-03-09 Tectus Corporation Headgear providing inductive coupling to a contact lens
CN112630990B (en) * 2020-12-21 2022-10-21 浙江清华柔性电子技术研究院 Intelligent contact lens and preparation method thereof
US11357620B1 (en) 2021-09-10 2022-06-14 California LASIK & Eye, Inc. Exchangeable optics and therapeutics

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6134736A (en) * 1993-01-15 2000-10-24 Isoclear, Inc. Contact lens treatment apparatus
JP2003195230A (en) * 2001-12-21 2003-07-09 Nippon Telegr & Teleph Corp <Ntt> Contact lens, probe for contact lens, searching method using the same and data management system for contact lens
US20100103368A1 (en) * 2007-03-07 2010-04-29 Washington, University Of Active contact lens
US20100249548A1 (en) * 2007-01-17 2010-09-30 Eyesense Ag Ocular sensor for the detection of an analyte in eye water
US20120206691A1 (en) * 2011-02-10 2012-08-16 Iwai Benjamin T Dynamic multifocal contact lens

Family Cites Families (184)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055378A (en) 1971-12-31 1977-10-25 Agfa-Gevaert Aktiengesellschaft Silicone contact lens with hydrophilic surface treatment
US4122942A (en) 1974-01-31 1978-10-31 Wolfson Leonard G Hydrophilic contact lens case
US4014321A (en) 1974-11-25 1977-03-29 March Wayne F Non-invasive glucose sensor system
US3958560A (en) 1974-11-25 1976-05-25 Wayne Front March Non-invasive automatic glucose sensor system
US4143949A (en) 1976-10-28 1979-03-13 Bausch & Lomb Incorporated Process for putting a hydrophilic coating on a hydrophobic contact lens
US4136250A (en) 1977-07-20 1979-01-23 Ciba-Geigy Corporation Polysiloxane hydrogels
US4153641A (en) 1977-07-25 1979-05-08 Bausch & Lomb Incorporated Polysiloxane composition and contact lens
DE2756114B1 (en) 1977-12-16 1979-05-23 Titmus Eurocon Kontaktlinsen Process for the surface treatment of a hard or dehydrated hydrophilic contact lens
US4309085A (en) 1979-07-12 1982-01-05 Morrison Robert J Method for measuring eye features with a contact lens
US4312575A (en) 1979-09-18 1982-01-26 Peyman Gholam A Soft corneal contact lens with tightly cross-linked polymer coating and method of making same
US4401371A (en) 1979-09-24 1983-08-30 Neefe Charles W Hydrogel oxygen generator with improved fluid flow
US4555372A (en) 1981-03-23 1985-11-26 Bausch & Lomb Incorporated Rotational molding of contact lenses
US4826936A (en) 1981-12-04 1989-05-02 Polymer Technology Corp. Silicone-containing contact lens material and contact lenses made thereof
US4604479A (en) 1981-12-04 1986-08-05 Polymer Technology Corporation Silicone-containing contact lens material and contact lenses made thereof
US4463149A (en) 1982-03-29 1984-07-31 Polymer Technology Corporation Silicone-containing contact lens material and contact lenses made thereof
JPS60163901A (en) 1984-02-04 1985-08-26 Japan Synthetic Rubber Co Ltd Plasma polymerization treatment
US4996275A (en) 1985-10-11 1991-02-26 Polymer Technology Corporation Fluorine containing polymeric compositions useful in contact lenses
US4686267A (en) 1985-10-11 1987-08-11 Polymer Technology Corporation Fluorine containing polymeric compositions useful in contact lenses
US4740533A (en) 1987-07-28 1988-04-26 Ciba-Geigy Corporation Wettable, flexible, oxygen permeable, substantially non-swellable contact lens containing block copolymer polysiloxane-polyoxyalkylene backbone units, and use thereof
CA1305873C (en) 1987-05-26 1992-08-04 Howel Gwynne Giles Method and means for detecting alcohol levels in humans
US5018849A (en) 1988-11-16 1991-05-28 Ciba-Geigy Corporation Colored contact lens and methods of making the same
US5326584A (en) 1989-04-24 1994-07-05 Drexel University Biocompatible, surface modified materials and method of making the same
GB8909491D0 (en) 1989-04-26 1989-06-14 Glynn Christopher J Device for real-time monitoring of human or animal bodily functions
US5070215A (en) 1989-05-02 1991-12-03 Bausch & Lomb Incorporated Novel vinyl carbonate and vinyl carbamate contact lens material monomers
US5034461A (en) 1989-06-07 1991-07-23 Bausch & Lomb Incorporated Novel prepolymers useful in biomedical devices
US5177168A (en) 1989-10-17 1993-01-05 Polymer Technology Corp. Polymeric compositions useful in oxygen permeable contact lenses
US5032658A (en) 1989-10-17 1991-07-16 Polymer Technology Corporation Polymeric compositions useful in oxygen permeable contact lenses
US5219965A (en) 1990-11-27 1993-06-15 Bausch & Lomb Incorporated Surface modification of polymer objects
US5135297A (en) 1990-11-27 1992-08-04 Bausch & Lomb Incorporated Surface coating of polymer objects
US5177165A (en) 1990-11-27 1993-01-05 Bausch & Lomb Incorporated Surface-active macromonomers
US5271875A (en) 1991-09-12 1993-12-21 Bausch & Lomb Incorporated Method for molding lenses
US5310779A (en) 1991-11-05 1994-05-10 Bausch & Lomb Incorporated UV curable crosslinking agents useful in copolymerization
US5358995A (en) 1992-05-15 1994-10-25 Bausch & Lomb Incorporated Surface wettable silicone hydrogels
US5260000A (en) 1992-08-03 1993-11-09 Bausch & Lomb Incorporated Process for making silicone containing hydrogel lenses
US5336797A (en) 1992-12-30 1994-08-09 Bausch & Lomb Incorporated Siloxane macromonomers
US5321108A (en) 1993-02-12 1994-06-14 Bausch & Lomb Incorporated Fluorosilicone hydrogels
US5346976A (en) 1993-03-29 1994-09-13 Polymer Technology Corporation Itaconate copolymeric compositions for contact lenses
US5616757A (en) 1993-04-08 1997-04-01 Bausch & Lomb Incorporated Organosilicon-containing materials useful for biomedical devices
TW253849B (en) 1993-08-09 1995-08-11 Ciba Geigy
WO1995017689A1 (en) 1993-12-21 1995-06-29 Bausch & Lomb Incorporated Method for increasing hydrophilicity of contact lenses
US5472436A (en) 1994-07-26 1995-12-05 Fremstad; Daria A. Ocular appliance for delivering medication
US5760100B1 (en) 1994-09-06 2000-11-14 Ciba Vision Corp Extended wear ophthalmic lens
US5585871A (en) 1995-05-26 1996-12-17 Linden; Harry Multi-function display apparatus
JP2001518061A (en) 1995-12-07 2001-10-09 ボシュ アンド ロム インコーポレイテッド Monomer units useful for reducing the modulus of silicone hydrogels
KR100462450B1 (en) 1995-12-07 2005-07-18 바슈 앤드 롬 인코포레이티드 Monomer units useful for reducing the modulus of low-functional polymer silicone compositions
US5682210A (en) 1995-12-08 1997-10-28 Weirich; John Eye contact lens video display system
US6120460A (en) 1996-09-04 2000-09-19 Abreu; Marcio Marc Method and apparatus for signal acquisition, processing and transmission for evaluation of bodily functions
US6544193B2 (en) 1996-09-04 2003-04-08 Marcio Marc Abreu Noninvasive measurement of chemical substances
US5708094A (en) 1996-12-17 1998-01-13 Bausch & Lomb Incorporated Polybutadiene-based compositions for contact lenses
US5981669A (en) 1997-12-29 1999-11-09 Bausch & Lomb Incorporated Silicone-containing prepolymers and low water materials
US5935155A (en) 1998-03-13 1999-08-10 John Hopkins University, School Of Medicine Visual prosthesis and method of using same
US6614408B1 (en) 1998-03-25 2003-09-02 W. Stephen G. Mann Eye-tap for electronic newsgathering, documentary video, photojournalism, and personal safety
US6131580A (en) 1998-04-17 2000-10-17 The University Of Washington Template imprinted materials by RFGD plasma deposition
BR9910345A (en) 1998-05-05 2001-01-09 Bausch & Lomb Method for treating the surface of a silicone hydrogel contact lens and silicone hydrogel contact lens
WO1999057179A1 (en) 1998-05-05 1999-11-11 Bausch & Lomb Incorporated Surface treatment of silicone hydrogel contact lenses
US7398119B2 (en) 1998-07-13 2008-07-08 Childrens Hospital Los Angeles Assessing blood brain barrier dynamics or identifying or measuring selected substances, including ethanol or toxins, in a subject by analyzing Raman spectrum signals
US6087941A (en) 1998-09-01 2000-07-11 Ferraz; Mark Warning device for alerting a person falling asleep
EP1130996B1 (en) 1998-11-20 2005-04-13 The University of Connecticut Generic integrated implantable potentiostat telemetry unit for electrochemical sensors
US6532298B1 (en) 1998-11-25 2003-03-11 Iridian Technologies, Inc. Portable authentication device and method using iris patterns
US6550915B1 (en) 1998-12-21 2003-04-22 Bausch & Lomb Incorporated Surface treatment of fluorinated contact lens materials
US6450642B1 (en) 1999-01-12 2002-09-17 California Institute Of Technology Lenses capable of post-fabrication power modification
JP2000315855A (en) * 1999-04-28 2000-11-14 Canon Inc Facedown mounting substrate and facedown mounting method
DE19921399C2 (en) 1999-05-07 2003-12-18 Univ Eberhard Karls Retinal implant
US6630243B2 (en) 1999-05-20 2003-10-07 Bausch & Lomb Incorporated Surface treatment of silicone hydrogel contact lenses comprising hydrophilic polymer chains attached to an intermediate carbon coating
US6200626B1 (en) 1999-05-20 2001-03-13 Bausch & Lomb Incorporated Surface-treatment of silicone medical devices comprising an intermediate carbon coating and graft polymerization
US6213604B1 (en) 1999-05-20 2001-04-10 Bausch & Lomb Incorporated Plasma surface treatment of silicone hydrogel contact lenses with a flexible carbon coating
US6440571B1 (en) 1999-05-20 2002-08-27 Bausch & Lomb Incorporated Surface treatment of silicone medical devices with reactive hydrophilic polymers
US6851805B2 (en) 1999-07-02 2005-02-08 E-Vision, Llc Stabilized electro-active contact lens
US20020007113A1 (en) 1999-08-26 2002-01-17 March Wayne Front Ocular analyte sensor
WO2001016641A1 (en) 1999-08-31 2001-03-08 Johnson & Johnson Vision Care, Inc. Rotationally stabilized contact lenses
US6579235B1 (en) 1999-11-01 2003-06-17 The Johns Hopkins University Method for monitoring intraocular pressure using a passive intraocular pressure sensor and patient worn monitoring recorder
WO2001034312A1 (en) 1999-11-05 2001-05-17 Bausch & Lomb Incorporated Surface treatment of non-plasma treated silicone hydrogel contact lenses
US6431705B1 (en) 1999-11-10 2002-08-13 Infoeye Eyewear heart rate monitor
US6939299B1 (en) 1999-12-13 2005-09-06 Kurt Petersen Implantable continuous intraocular pressure sensor
US7998412B2 (en) 2000-01-07 2011-08-16 Smart Holograms Limited Ophthalmic device comprising a holographic sensor
US6735328B1 (en) 2000-03-07 2004-05-11 Agilent Technologies, Inc. Personal viewing device with system for providing identification information to a connected system
US6599559B1 (en) 2000-04-03 2003-07-29 Bausch & Lomb Incorporated Renewable surface treatment of silicone medical devices with reactive hydrophilic polymers
TW518733B (en) * 2000-04-08 2003-01-21 Advanced Semiconductor Eng Attaching method of heat sink for chip package
US6428839B1 (en) 2000-06-02 2002-08-06 Bausch & Lomb Incorporated Surface treatment of medical device
US6779888B2 (en) 2000-07-28 2004-08-24 Ocular Sciences, Inc. Contact lenses with microchannels
US6749568B2 (en) 2000-08-21 2004-06-15 Cleveland Clinic Foundation Intraocular pressure measurement system including a sensor mounted in a contact lens
CA2420861C (en) 2000-09-19 2007-04-24 Joseph A. Mcgee Method for applying polymeric lens coating
JP2004510199A (en) 2000-09-28 2004-04-02 ノバルティス アクチエンゲゼルシャフト Perforated lens for increased tear flow and method of manufacturing the lens
US6570386B2 (en) 2001-07-30 2003-05-27 Hewlett-Packard Development Company, L.P. System and method for providing power to electrical devices
US6885818B2 (en) 2001-07-30 2005-04-26 Hewlett-Packard Development Company, L.P. System and method for controlling electronic devices
US20030149350A1 (en) 2002-02-05 2003-08-07 Vittorio Porciatti Glaucoma screening system and method
US20030179094A1 (en) 2002-03-08 2003-09-25 Abreu Marcio Marc Signal-to-product coupling
EP1947501B1 (en) 2002-08-09 2012-04-25 E-Vision, LLC Electro-active contact lens system
US7429465B2 (en) 2002-09-13 2008-09-30 Novartis Ag Process for analyzing tear fluid
US7964390B2 (en) 2002-10-11 2011-06-21 Case Western Reserve University Sensor system
US7131945B2 (en) 2002-10-16 2006-11-07 California Institute Of Technology Optically powered and optically data-transmitting wireless intraocular pressure sensor device
US6958169B2 (en) 2002-12-17 2005-10-25 Bausch & Lomb Incorporated Surface treatment of medical device
WO2004062480A2 (en) 2003-01-09 2004-07-29 The Regents Of The University Of California Implantable devices and methods for measuring intraocular, subconjunctival or subdermal pressure and/or analyte concentration
WO2004064629A1 (en) 2003-01-21 2004-08-05 Ehrfeld Miktotechnik Ag Sensor system for detecting analytes in tear fluid
US20040181172A1 (en) 2003-03-12 2004-09-16 Carney Fiona Patricia Devices for collecting analytes of interest in tears
DE602004016324D1 (en) 2003-05-26 2008-10-16 Securecom Technologies Ltd PORTABLE COMMUNICATION DEVICE
DE10329615A1 (en) 2003-06-23 2005-03-03 Eberhard-Karls-Universität Tübingen Universitätsklinikum Active retina implant with a variety of picture elements
ES2350933T3 (en) 2003-08-07 2011-01-28 Eyesense Ag OPHTHALM SENSOR
US7250197B2 (en) 2003-08-25 2007-07-31 Bausch & Lomb Incorporated Plasma treatment of contact lens and IOL
US6793500B1 (en) * 2003-09-18 2004-09-21 International Business Machines Corporation Radial contact pad footprint and wiring for electrical components
US7289260B2 (en) 2003-10-03 2007-10-30 Invisia Ltd. Multifocal lens
WO2005103201A1 (en) 2004-03-31 2005-11-03 University Of Connecticut Shape memory main-chain smectic-c elastomers
WO2006015315A2 (en) 2004-07-30 2006-02-09 University Of Rochester Medical Center Intraocular video system
JP4455216B2 (en) 2004-08-06 2010-04-21 キヤノン株式会社 Detection device
JP4570436B2 (en) * 2004-10-12 2010-10-27 三菱製紙株式会社 Metal mesh and wiring pattern transfer sheet
CN100368828C (en) * 2004-10-12 2008-02-13 精工爱普生株式会社 Lens and method of manufacturing lens
KR20060044058A (en) 2004-11-11 2006-05-16 삼성전자주식회사 Blood components measuring apparatus and method using trans-reflectance
GB2422660C (en) 2005-01-27 2018-04-25 H Icheck Ltd Improved device for monitoring body functions
US20070121065A1 (en) 2005-03-24 2007-05-31 Cox David D Device and method for tracking eye gaze direction
US7673528B2 (en) * 2005-05-12 2010-03-09 Euisik Yoon Flexible modular sensor systems
TWI249772B (en) 2005-06-07 2006-02-21 Siliconware Precision Industries Co Ltd Semiconductor device for accommodating large chip, fabrication method thereof, and carrier used in the semiconductor device
WO2007005913A2 (en) 2005-07-01 2007-01-11 Infotonics Technology Center, Inc. Non-invasive monitoring system
US8118752B2 (en) 2006-02-16 2012-02-21 The Board Of Trustees Of The University Of Illinois Apparatus and methods for mapping retinal function
US7384145B2 (en) 2006-02-16 2008-06-10 The Board Of Trustees Of The University Of Illinois Mapping retinal function using corneal electrode array
US7885698B2 (en) 2006-02-28 2011-02-08 Abbott Diabetes Care Inc. Method and system for providing continuous calibration of implantable analyte sensors
GB0604845D0 (en) 2006-03-10 2006-04-19 Ocutec Ltd Polymeric Materials
US8224415B2 (en) 2009-01-29 2012-07-17 Abbott Diabetes Care Inc. Method and device for providing offset model based calibration for analyte sensor
CA2587097A1 (en) 2006-04-12 2007-10-12 Rikke Dootjes Lens
TW200741278A (en) 2006-04-28 2007-11-01 Wei-Bin Shiu Contact lenses
WO2007136993A1 (en) 2006-05-17 2007-11-29 Mayo Foundation For Medical Education And Research Monitoring intraocular pressure
US7878650B2 (en) 2006-06-29 2011-02-01 Fritsch Michael H Contact lens materials, designs, substances, and methods
US20080108181A1 (en) * 2006-11-06 2008-05-08 City University Of Hong Kong Method for attaching integrated circuit component to a substrate
US20110274680A1 (en) 2009-10-02 2011-11-10 Mazed Mohammad A Chemical composition and its delivery for lowering the risks of alzheimer's, cardiov ascular and type-2 diabetes diseases
AR064986A1 (en) 2007-01-22 2009-05-06 Pixeloptics Inc CHOLESTERIC LIQUID CRYSTAL MATERIAL IN ELECTROACTIVE LENS
AR064985A1 (en) 2007-01-22 2009-05-06 E Vision Llc FLEXIBLE ELECTROACTIVE LENS
AU2008218240B2 (en) 2007-02-23 2014-01-30 E-Vision Smart Optics, Inc. Ophthalmic dynamic aperture
US8446341B2 (en) 2007-03-07 2013-05-21 University Of Washington Contact lens with integrated light-emitting component
US8679859B2 (en) 2007-03-12 2014-03-25 State of Oregon by and through the State Board of Higher Education on behalf of Porland State University Method for functionalizing materials and devices comprising such materials
US7982294B2 (en) * 2007-03-14 2011-07-19 Broadcom Corporation Semiconductor die with mask programmable interface selection
US20080296758A1 (en) * 2007-05-30 2008-12-04 Texas Instruments Incorporated Protection and Connection of Devices Underneath Bondpads
US8689971B2 (en) 2007-08-31 2014-04-08 Novartis Ag Contact lens packaging solutions
WO2009059203A1 (en) 2007-11-02 2009-05-07 Edwards Lifesciences Corporation Analyte monitoring system having back-up power source for use in either transport of the system or primary power loss
US8608310B2 (en) 2007-11-07 2013-12-17 University Of Washington Through Its Center For Commercialization Wireless powered contact lens with biosensor
US8579434B2 (en) 2007-11-07 2013-11-12 University Of Washington Through Its Center For Commercialization Free-standing two-sided device fabrication
US20090196460A1 (en) 2008-01-17 2009-08-06 Thomas Jakobs Eye tracking system and method
WO2009094587A1 (en) 2008-01-23 2009-07-30 Deering Michael F Eye mounted displays
WO2009094643A2 (en) 2008-01-26 2009-07-30 Deering Michael F Systems using eye mounted displays
JP2009182178A (en) * 2008-01-31 2009-08-13 Disco Abrasive Syst Ltd Method of manufacturing device
TWI511869B (en) 2008-02-20 2015-12-11 Johnson & Johnson Vision Care Energized biomedical device
WO2009111726A2 (en) 2008-03-06 2009-09-11 The Regents Of The University Of California Measuring outlflow resistance/facility of an eye
JP2011515157A (en) 2008-03-18 2011-05-19 ピクセルオプティクス, インコーポレイテッド Advanced electroactive optical component devices
US7931832B2 (en) 2008-03-31 2011-04-26 Johnson & Johnson Vision Care, Inc. Ophthalmic lens media insert
ES2330405B1 (en) 2008-06-06 2010-09-21 Consejo Superior De Investigaciones Cientificas (Csic) (45%) SENSOR CONTACT LENS, SYSTEM FOR NON-INVASIVE MONITORING OF INTRAOCULAR PRESSURE AND METHOD TO PUT YOUR MEASUREMENT.
US20100016704A1 (en) 2008-07-16 2010-01-21 Naber John F Method and system for monitoring a condition of an eye
US8142016B2 (en) 2008-09-04 2012-03-27 Innovega, Inc. Method and apparatus for constructing a contact lens with optics
US9296158B2 (en) 2008-09-22 2016-03-29 Johnson & Johnson Vision Care, Inc. Binder of energized components in an ophthalmic lens
US9675443B2 (en) * 2009-09-10 2017-06-13 Johnson & Johnson Vision Care, Inc. Energized ophthalmic lens including stacked integrated components
US7863722B2 (en) * 2008-10-20 2011-01-04 Micron Technology, Inc. Stackable semiconductor assemblies and methods of manufacturing such assemblies
US8385998B2 (en) 2008-10-24 2013-02-26 Jin Zhang Contact lens integrated with a biosensor for the detection of glucose and other components in tears
US8092013B2 (en) 2008-10-28 2012-01-10 Johnson & Johnson Vision Care, Inc. Apparatus and method for activation of components of an energized ophthalmic lens
US9375886B2 (en) * 2008-10-31 2016-06-28 Johnson & Johnson Vision Care Inc. Ophthalmic device with embedded microcontroller
US9375885B2 (en) 2008-10-31 2016-06-28 Johnson & Johnson Vision Care, Inc. Processor controlled ophthalmic device
US8169006B2 (en) 2008-11-29 2012-05-01 Electronics And Telecommunications Research Institute Bio-sensor chip for detecting target material
US20120041286A1 (en) 2008-12-04 2012-02-16 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Systems, devices, and methods including implantable devices with anti-microbial properties
US20100234942A1 (en) 2009-03-11 2010-09-16 Peyman Gholam A Transition lenses with virtual pupil
JP5719340B2 (en) 2009-03-20 2015-05-20 レティーナ インプラント アーゲー Active retinal implant
CA2756351A1 (en) 2009-03-26 2010-09-30 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acti Ng For And On Behalf Of Arizona State University Integrated device for surface-contact sampling, extraction and electrochemical measurements
US20100258952A1 (en) * 2009-04-08 2010-10-14 Interconnect Portfolio Llc Interconnection of IC Chips by Flex Circuit Superstructure
US8636358B2 (en) 2009-05-17 2014-01-28 Helmut Binder Lens with variable refraction power for the human eye
US8461226B2 (en) 2009-07-24 2013-06-11 Bausch & Lomb Incorporated Contact lens
US8060560B2 (en) 2009-08-27 2011-11-15 Net Power And Light, Inc. System and method for pervasive computing
EP2477535A1 (en) 2009-09-18 2012-07-25 Orthomems, Inc. Implantable ophthalmic mems sensor devices and methods for eye surgery
EP2467054A4 (en) 2009-09-18 2014-04-09 Univ Akron Optical device and method for non-invasive real-time testing of blood sugar levels
CN102711593A (en) 2009-09-18 2012-10-03 奥尔托梅姆斯有限公司 Implantable mems intraocular pressure sensor devices and methods for glaucoma monitoring
US8628194B2 (en) 2009-10-13 2014-01-14 Anton Sabeta Method and system for contact lens care and compliance
AU2011204668B2 (en) 2010-01-05 2014-09-04 Sensimed Ag Intraocular pressure monitoring device
US9128281B2 (en) 2010-09-14 2015-09-08 Microsoft Technology Licensing, Llc Eyepiece with uniformly illuminated reflective display
CA2791748A1 (en) 2010-03-03 2011-09-09 Brien Holden Vision Institute Corneal remodelling contact lenses and methods of treating refractive error using corneal remodelling
US20110298794A1 (en) 2010-06-08 2011-12-08 Barney Freedman Circular polarized contact lenses and methods thereof
US9259309B2 (en) 2010-06-20 2016-02-16 Elenza, Inc. Ophthalmic devices and methods with application specific integrated circuits
EP2638878B1 (en) 2010-07-30 2019-10-23 Novartis AG Silicone hydrogel lenses with water-rich surfaces
US9289584B2 (en) 2010-09-13 2016-03-22 The University Of British Columbia Remotely controlled drug delivery systems
US20120238857A1 (en) 2010-09-16 2012-09-20 Orthomems, Inc. Expandable implantable pressure sensor for intraocular surgery
DE102010046966B4 (en) * 2010-09-29 2018-05-24 Infineon Technologies Ag Building block and method for the production of a building block
DK2621339T3 (en) 2010-09-29 2020-02-24 Dexcom Inc ADVANCED SYSTEM FOR CONTINUOUS ANALYTICAL MONITORING
WO2012051167A1 (en) 2010-10-11 2012-04-19 William Egan Fluid filled adjustable contact lenses
US9063352B2 (en) 2010-10-11 2015-06-23 The Regents Of The University Of California Telescopic contact lens
GB201017637D0 (en) 2010-10-20 2010-12-01 Univ Dundee Device for monitoring intraocular pressure
US9114004B2 (en) 2010-10-27 2015-08-25 Iridium Medical Technology Co, Ltd. Flexible artificial retina devices
TWI432486B (en) * 2011-02-21 2014-04-01 Far Eastern New Century Corp Method for producing silicone hydrogel with high water content
US9110310B2 (en) * 2011-03-18 2015-08-18 Johnson & Johnson Vision Care, Inc. Multiple energization elements in stacked integrated component devices
EP2508935A1 (en) * 2011-04-08 2012-10-10 Nxp B.V. Flexible eye insert and glucose measuring system
US8542325B2 (en) 2011-09-29 2013-09-24 Ehren Ray Burton Color changing contact lenses
US8960899B2 (en) * 2012-09-26 2015-02-24 Google Inc. Assembling thin silicon chips on a contact lens

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6134736A (en) * 1993-01-15 2000-10-24 Isoclear, Inc. Contact lens treatment apparatus
JP2003195230A (en) * 2001-12-21 2003-07-09 Nippon Telegr & Teleph Corp <Ntt> Contact lens, probe for contact lens, searching method using the same and data management system for contact lens
US20100249548A1 (en) * 2007-01-17 2010-09-30 Eyesense Ag Ocular sensor for the detection of an analyte in eye water
US20100103368A1 (en) * 2007-03-07 2010-04-29 Washington, University Of Active contact lens
US20120206691A1 (en) * 2011-02-10 2012-08-16 Iwai Benjamin T Dynamic multifocal contact lens

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9836614B2 (en) 2012-09-27 2017-12-05 Intel Corporation Detecting, enforcing and controlling access privileges based on sandbox usage

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