WO2013170485A1 - 一种封装结构及其封装方法 - Google Patents

一种封装结构及其封装方法 Download PDF

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Publication number
WO2013170485A1
WO2013170485A1 PCT/CN2012/075753 CN2012075753W WO2013170485A1 WO 2013170485 A1 WO2013170485 A1 WO 2013170485A1 CN 2012075753 W CN2012075753 W CN 2012075753W WO 2013170485 A1 WO2013170485 A1 WO 2013170485A1
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WO
WIPO (PCT)
Prior art keywords
metal
substrate
windings
surrounding structure
groove
Prior art date
Application number
PCT/CN2012/075753
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English (en)
French (fr)
Inventor
李冠华
江京
彭勤卫
Original Assignee
深南电路有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 深南电路有限公司 filed Critical 深南电路有限公司
Priority to PCT/CN2012/075753 priority Critical patent/WO2013170485A1/zh
Priority to US14/000,058 priority patent/US20150115427A1/en
Publication of WO2013170485A1 publication Critical patent/WO2013170485A1/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/645Inductive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/89Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to the field of mechanical packaging, and in particular to a package structure and a packaging method.
  • SiP System in Package
  • SiP technology As users become more and more demanding for the integration of electronic components, SiP technology has also been widely used.
  • SMT surface mount
  • the inductor with a fixed inductance value is directly filled into the substrate for packaging according to the user's requirements.
  • the inductance may exceed the size range that the package can withstand, or the user may need to use different inductances in actual use. For this reason, in the prior art SiP method, it is often necessary to increase the package. Body size, or package multiple inductors with different inductances to meet the needs of users, but this will take up a lot of space, affecting system integration and packaging effects.
  • Embodiments of the present invention provide a package structure and a package method thereof, which can save package space, thereby improving system integration and package effects.
  • the package structure provided by the embodiment of the invention includes a substrate
  • the substrate is provided with a first metal surrounding structure and a second metal surrounding structure;
  • the first metal surrounding structure and the second metal surrounding structure are connected by a connection hole on the substrate to form a spiral turns.
  • a slot is further formed on the substrate;
  • the first metal enclosure is located at the top of the slot, and the second metal enclosure is located at the bottom of the slot;
  • the spiral turns are formed around the slots.
  • the second metal surrounding structure comprises a plurality of metal windings and a plurality of metal bonds Ministry
  • the metal winding is laid on the bottom of the trough
  • the metal bonding portion is formed by extending a metal wire from a side surface of the groove toward a surface of the substrate through a connection hole on the substrate, and the metal bonding portion is disposed on a surface of the groove Both sides;
  • the first metal enclosure structure includes a plurality of metal leads
  • the metal bonding portions on both sides of the surface of the pit are connected by the metal wires such that a path is formed between any two metal bonding portions to be joined.
  • the metal windings laid on the bottom of the slot belong to the same spiral line; the two ends of each metal wire extend from the two sides of the groove to the surface of the substrate, Two metal bonding portions symmetrically distributed are formed on both sides of the surface of the groove.
  • the metal windings laid at the bottom of the trench belong to different spiral turns
  • Both ends of each of the metal windings extend from the two sides of the groove toward the surface of the substrate to form symmetrically distributed two metal bonding portions on both sides of the surface of the groove.
  • two ends of each of the metal windings respectively extend from two sides of the groove toward a surface of the substrate to form symmetrically distributed 2N metal keys on both sides of the groove surface. a portion, the N being a positive integer greater than one;
  • the N metal bonding portions on the same side of the surface of the groove are laid on the same surface, or are respectively distributed on different step faces.
  • the substrate comprises a first ink layer, a second ink layer, a first circuit layer, a second circuit layer, and a core layer;
  • the slot is located in the core layer, and the core layer is an insulating layer;
  • the metal winding is located at a second circuit layer at the bottom of the core layer, and the metal bonding portion is located at a first circuit layer at the top of the core layer;
  • the connecting hole penetrates the core layer to connect the metal winding and the metal bonding portion; the surface of the first circuit layer is coated with a first ink layer, and the surface of the second circuit layer is coated with The second ink layer.
  • the first metal surrounding structure includes a plurality of metal windings and a plurality of metal bonding portions; The metal winding is laid on top of the trough;
  • the metal bonding portion is formed by extending a metal wire from a side surface of the groove toward a surface of the substrate through a connection hole on the substrate, and the metal bonding portion is disposed on a surface of the groove Both sides;
  • the second metal enclosure structure includes a plurality of metal leads
  • the metal bonding portions on both sides of the surface of the pit are connected by the metal wires such that a path is formed between any two metal bonding portions to be joined.
  • the first metal surrounding structure comprises an upper surface metal winding, an upper surface metal bonding portion, and an upper surface metal lead;
  • the upper surface metal winding is laid on a side of the groove
  • the upper surface metal bonding portion is formed by extending the upper surface metal wire through a connection hole on the substrate toward an upper surface of the substrate, and the upper surface metal bonding portion is disposed on an upper surface of the substrate Both sides;
  • the upper surface metal bonding portions on both sides of the upper surface of the substrate are connected by the upper surface metal wires;
  • the second metal surrounding structure includes a lower surface metal winding, a lower surface metal bonding portion, and a lower surface metal wire;
  • the lower surface metal wire is laid on a side of the groove
  • the lower surface metal bonding portion is formed by the lower surface metal winding extending through a connection hole on the substrate toward a lower surface of the substrate, and the lower surface metal bonding portion is disposed on a lower surface of the substrate Both sides;
  • the first metal surrounding structure includes a first set of metal windings
  • the first set of metal windings are laid on top of the trench and surround the trench from the upper half;
  • the second metal surrounding structure includes a second set of metal windings;
  • the second set of metal windings are laid on the bottom of the trench and surround the trench from the lower half; the first set of metal windings and the second set of metal windings are adapted such that the first set A spiral of turns is formed around the trench when the metal winding is connected to the second set of metal windings.
  • the first set of metal windings and the second set of metal windings are connected to form the same spiral turns, or at least two spiral turns.
  • the first metal surrounding structure further includes at least a third group of metal windings, and the third group of metal windings and the first group of metal windings are located in different circuit layers;
  • the third set of metal windings is laid on the top of the trench and surrounds the trench from the upper half;
  • the second metal surrounding structure further includes at least a fourth set of metal windings, the fourth set of metal The winding is located at a different circuit layer from the second set of metal windings;
  • the fourth set of metal windings are laid on the bottom of the trough and surround the trough from the lower half; the third set of metal windings and the fourth set of metal windings are adapted such that the third set Another spiral turns are formed around the slots when the metal windings are connected to the fourth set of metal windings.
  • the substrate comprises a first ink layer, a second ink layer, a first circuit layer, a second circuit layer, a core layer, and a filling layer;
  • the slot is located in the core layer, and the core layer is an insulating layer;
  • the filling layer is located at the top of the trench, and the filling layer is an insulating layer;
  • the first set of metal windings is located at a first circuit layer at the top of the core layer, and the second set of metal windings is located at a second circuit layer at the bottom of the core layer;
  • the connecting hole penetrates the core layer to connect the first set of metal windings and the second set of metal windings;
  • the surface of the first wiring layer is coated with a first ink layer, and the surface of the second wiring layer is coated with a second ink layer.
  • the surface of the substrate is provided with a plurality of pairs of metal connections electrically connected to the spiral turns.
  • the package structure further includes:
  • control device disposed on the substrate
  • the control device is coupled to the metal connection for controlling the inductance of the spiral turns output.
  • the package structure further includes:
  • An inductive core located in the trench.
  • first metal surrounding structure and a second metal surrounding structure on the substrate;
  • the first metal surrounding structure and the second metal surrounding structure are connected through a connection hole on the substrate to form a spiral turns;
  • All or part of the substrate and other devices on the substrate are encapsulated to obtain a package.
  • the packaging method further includes:
  • the disposing the first metal surrounding structure and the second metal surrounding structure on the substrate comprises: providing a second metal surrounding structure at the bottom of the trough, and providing a first metal surrounding structure at the top of the trough;
  • the spiral turns are formed around the slots.
  • the second metal surrounding structure comprises a plurality of metal windings and a plurality of metal bonding portions, the first metal surrounding structure comprising a plurality of metal wires;
  • the providing a second metal enclosure structure at the bottom of the trench and providing a first metal enclosure structure at the top of the trench includes:
  • Metal bonding portions are disposed on both sides of the surface of the groove;
  • a metal wire is used to connect the metal bonding portions on both sides of the surface of the groove to form a spiral turns so that a path is formed between any two metal bonding portions to be joined.
  • the first metal surrounding structure includes a plurality of metal windings and a plurality of metal bonding portions
  • the second metal surrounding structure includes a plurality of metal wires
  • the providing a second metal enclosure structure at the bottom of the trench and providing a first metal enclosure structure at the top of the trench includes:
  • Metal bonding portions are disposed on both sides of the surface of the groove;
  • a metal wire is used to connect the metal bonding portions on both sides of the surface of the groove to form a spiral turns so that a path is formed between any two metal bonding portions to be joined.
  • the first metal surrounding structure comprises an upper surface metal winding, an upper surface metal bonding portion and an upper surface metal lead
  • the second metal surrounding structure comprises a lower surface metal winding and a lower surface gold a bonding portion and a lower surface metal lead
  • the providing a second metal enclosure structure at the bottom of the trench and providing a first metal enclosure structure at the top of the trench includes:
  • the upper surface metal bonding portion is disposed on both sides of the upper surface of the substrate;
  • the lower surface metal bonding portion is disposed on both sides of the lower surface of the substrate;
  • the lower surface metal bonding portions are joined to the lower surface metal bonding portions on both sides of the lower surface of the substrate.
  • the first metal surrounding structure includes a first set of metal windings
  • the second metal surrounding structure includes a second set of metal windings
  • the providing a second metal enclosure structure at the bottom of the trench and providing a first metal enclosure structure at the top of the trench includes:
  • the first set of metal windings and the second set of metal windings are adapted such that a spiral turns are formed around the slots when the first set of metal windings and the second set of metal windings are connected.
  • the method further includes:
  • a plurality of pairs of metal connections electrically connected to the spiral turns are disposed on the surface of the substrate.
  • the method further includes:
  • a control device is disposed on the substrate, and the control device is coupled to the metal connection portion such that the control device controls an inductance of the output of the spiral turns.
  • the method further includes:
  • the inductor core is fixed in the slot.
  • a first metal surrounding structure and a second metal surrounding structure are disposed on the substrate, and the first metal surrounding structure and the second metal surrounding structure are connected through a connection hole on the substrate to form a spiral
  • the wire turns to realize the function of the inductor.
  • the user can determine the length of the spiral turns connected to the circuit according to actual needs to obtain the required inductance. Since the embodiment of the present invention can meet various inductance requirements of the user, the package space can be saved. , thereby improving system integration and packaging effects.
  • FIG. 1 is a schematic view showing a first embodiment of a package structure according to the present invention.
  • FIG. 2 is a schematic view showing a second embodiment of a package structure according to the present invention.
  • FIG. 3 is a schematic view showing a third embodiment of a package structure according to the present invention.
  • FIG. 4 is a schematic view showing a fourth embodiment of a package structure according to the present invention.
  • Figure 5 is a schematic view showing a fifth embodiment of the package structure of the present invention.
  • FIG. 6 is a schematic view showing a sixth embodiment of a package structure according to the present invention.
  • Figure 7 is a schematic view showing a seventh embodiment of the package structure of the present invention.
  • FIG. 8 is a schematic diagram of a packaging effect of a seventh embodiment of a package structure according to the present invention.
  • FIG. 9 is a schematic view showing an eighth embodiment of a package structure according to the present invention.
  • FIG. 10 is a schematic view showing a ninth embodiment of a package structure according to the present invention.
  • FIG. 11 is a schematic view showing an example of the effect of the ninth implementation of the package structure of the present invention.
  • FIG. 12 is a schematic diagram of an embodiment of a packaging method according to the present invention.
  • FIG. 13 is a schematic diagram of another embodiment of a packaging method according to the present invention.
  • Figure 14 is a schematic view showing the first stage of the packaging process of the present invention.
  • Figure 15 is a schematic view showing the second stage of the packaging process of the present invention.
  • 16 is a schematic diagram of a first application scenario of a package structure according to the present invention.
  • FIG. 17 is a schematic diagram of a second application scenario of a package structure according to the present invention.
  • FIG. 18 is a schematic diagram of a third application scenario of a package structure according to the present invention.
  • FIG. 19 is a schematic diagram of a fourth application scenario of a package structure according to the present invention.
  • Embodiments of the present invention provide a package structure and a package method thereof, which are capable of packaging parameters with variable parameters. Electronic components, saving packaging space, improving system integration and packaging.
  • the package structure in this embodiment may include a substrate
  • the substrate is provided with a first metal surrounding structure and a second metal surrounding structure;
  • the first metal surrounding structure and the second metal surrounding structure are connected through a connection hole on the substrate to form a spiral turns, thereby achieving an inductance function.
  • the substrate may be provided with a slot for accommodating the inductor core, or a slot may not be provided.
  • the first metal surrounding structure and the second metal surrounding structure are respectively located at an upper portion and a lower portion of the substrate.
  • a first metal enclosure may be located at the top of the slot and a second metal enclosure may be located at the bottom of the slot.
  • the specific implementation manner of the first metal enclosure structure and the specific implementation manner of the second metal enclosure structure may be various. The following two examples are described:
  • the first metal surrounding structure is a substrate outer connecting structure
  • the second metal surrounding structure is a substrate inner connecting structure
  • the second metal surrounding structure is formed by the metal winding in the substrate by laying the metal winding in the substrate, and the first metal surrounding structure forms the upper half of the groove. Is metal wrapping through the metal on the surface of the substrate? ) The way the wire is bonded.
  • the second metal surrounding structure may include a plurality of metal windings and a plurality of metal bonding portions; the metal windings are laid on the bottom of the trench; the metal bonding portion is passed by the metal winding a connecting hole on the substrate is formed from a side surface of the groove toward a surface of the substrate, and the metal bonding portion is disposed on both sides of the surface of the groove;
  • the first metal surrounding structure may include a plurality of metal wires; the metal bonding portions on both sides of the surface of the groove are connected by the metal wires, so that a path is formed between any two metal bonding portions to be connected .
  • the first embodiment of the package structure of the present invention includes: Substrate 101;
  • the substrate 101 is provided with a slot 102;
  • a plurality of metal windings 104 are disposed on the bottom of the trench 102.
  • the metal windings 104 extend from the side of the trench 102 to the surface of the substrate 101 through a connection hole on the substrate 101 to form a plurality of metal bonds.
  • a portion 105, the metal bonding portions 105 are distributed on both sides of the surface of the trench 102; the metal bonding portions 105 on both sides of the surface of the trench 102 are connected by metal wires 106 to form a spiral turns, so that A passage is formed between any two metal bonding portions 105 that are connected.
  • the package structure in this embodiment may further include an inductor core 103, which may be disposed in the slot 102. It can be understood that, in practical applications, The inductor core 103 is not provided, and is not limited herein.
  • the metal wire when the metal wire is used to connect the metal bonding portion, the metal wire may be misaligned, or the metal wire may be misaligned. Accordingly, the metal wire 104 may be arranged in various ways. One of them is shown in Fig. 1. Each metal winding can be approximately perpendicular to the inductor core 103. It can be understood that in practical applications, other arrangements can be made, for example, see the figure. 2, the embodiment shown in FIG. 2 is a second embodiment of the package structure of the present invention. Compared with the first embodiment shown in FIG. 1, the difference is only in the arrangement of the metal windings and the manner in which the metal leads are connected.
  • the metal winding and the metal lead are a single-wire winding structure, that is, the coils composed of all the metal windings and the metal leads are the same winding, in this winding
  • the metal windings laid at the bottom of the groove belong to the same spiral line; then, the two ends of each metal wire extend from the two sides of the groove to the surface of the substrate, respectively.
  • Two metal bonding portions symmetrically distributed are formed on both sides of the surface of the groove.
  • FIG. 3 is a third embodiment of the package structure of the present invention:
  • the metal windings laid at the bottom of the groove belong to different spiral turns, and when the two ends of the metal windings belonging to different spiral turns extend from the two sides of the groove to the surface of the substrate, respectively,
  • the metal bonding portion also belongs to different spiral turns, that is, the metal bonding portion 301 and gold as shown in FIG.
  • the bonding portions 302 belong to different spiral turns, so that two different turns are actually wound around the groove. It can be understood that only two segments are taken as an example here, and in practical applications, It can be more segments, not limited here.
  • FIG. 4 is a fourth embodiment of the package structure of the present invention
  • FIG. 5 is a fifth embodiment of the package structure of the present invention:
  • both ends of each metal winding are respectively from the two sides of the slot toward the substrate.
  • N is a positive integer greater than 1, that is, one end of each metal winding can extend N metal bonding portions, thereby achieving multilayer winding.
  • N metal bonding portions on the same side of the surface of the trench may be distributed on the same surface.
  • N is 2, that is, 4 metal bonding is extended for each metal winding.
  • the portion, that is, the metal bonding portion 401, the metal bonding portion 402, the metal bonding portion 403, and the metal bonding portion 404, each of the two metal bonding portions is located on the same side of the surface of the groove and is located on the same plane.
  • N is 2, that is, each metal winding extends 4 pieces.
  • a metal bonding portion that is, a metal bonding portion 501, a metal bonding portion 502, a metal bonding portion 503, and a metal bonding portion 504, wherein the metal bonding portion 501 and the metal bonding portion 502 are located on the same side of the groove surface.
  • the metal bonding portion 503 and the metal bonding portion 504 are located on the same side of the surface of the groove, and the metal bonding portion 501 and the metal bonding portion 502 are located on different step surfaces, and the metal bonding portion 503 and the metal bonding portion 504 are located at different positions. Step surface.
  • N is taken as an example. It can be understood that, in practical applications, N may be other values, such as 3, 4, 5, etc., and each corresponding metal winding extends. 6 , 8 , 10 metal bonding parts, the specific structure is similar, and will not be described here.
  • the package structure of the present invention is described in detail below with reference to a specific example.
  • the sixth embodiment of the package structure of the present invention includes:
  • Surface extension A plurality of metal bonding portions 606 are distributed on both sides of the surface of the groove 603. In this embodiment, two ends of each metal winding 604 may extend from the two sides of the slot 603 to the surface of the substrate 601 to form a symmetric distribution on both sides of the surface of the slot 603. Two metal bonding portions 606.
  • the groove 603 in this embodiment can be obtained by laser-polishing or etching the substrate 601. It can be understood that the substrate 601 can be obtained by other means, which is not limited herein.
  • the inductor core 602 in this embodiment may be a magnetic core or a ferrite, or a core of other materials, and the inductor core 602 may be a non-conductive bonding material (such as a glue for die attach). Or a film or the like is implanted to be fixed in the groove 603, or may be fixed in the groove 603 by other means, which is not limited herein.
  • the metal winding 604 can surround the slot 603 from the bottom surface and the two sides, that is, form the lower half metal surrounding structure of the inductor core 602 in the slot 603, in order to obtain the spiral of the inductor. It is also necessary to provide metal leads on the substrate 601 to form an upper half metal enclosing structure of the inductive core 602 in the trench 603, specifically:
  • the metal bonding portions 606 on both sides of the surface of the trench 603 may be joined by metal leads 610 to form a spiral turns such that a path is formed between any two metal bonding portions to be joined.
  • the substrate in this embodiment may be a substrate of a double-sided circuit layer or a substrate of a multi-layer circuit layer in a practical application.
  • the structure of the substrate of the double-sided circuit layer may include:
  • first ink layer 607a a first ink layer 607a, a second ink layer 607b, a first circuit layer 608a, a second circuit layer 608b, and a core layer 609, wherein the core layer 609 is an insulating layer;
  • the slot 603 is located in the core layer 609;
  • the metal winding 604 is located at the bottom of the core layer 609 of the second circuit layer 608b, the metal bonding portion 606 is located at the top of the core layer 609 of the first circuit layer 608a;
  • the connecting hole 605 penetrates the core layer 609 to connect the metal winding 604 and the metal bonding portion 606;
  • the surface of the first wiring layer 608a is coated with a first ink layer 607a, and the surface of the second wiring layer 608b is coated with a second ink layer 607b.
  • a plurality of pairs of metal connecting portions connected to the metal bonding portion 606 may be disposed on the substrate 601, and then control The device can be electrically connected to the metal connection to achieve electrical connection with the helix, and the control device can control the length of the helix used to control the inductance of the helix output.
  • a plurality of metal windings 604 are laid on the bottom of the slot 603 for accommodating the inductor core 602, and the metal winding 604 passes through the connecting hole 605 on the substrate 601 from the side of the slot 603 toward the substrate 601.
  • the surface extends to form a plurality of metal bonding portions 606 to surround the slots 603. Therefore, when the metal bonding portions 606 on both sides of the surface of the groove 603 are electrically connected, a spiral turns can be formed to realize the function of the inductance.
  • metal bonding portions 606 There are a plurality of metal bonding portions 606. When different metal bonding portions 606 are connected, the length of the conductive metal windings 604 is different, and the inductance is different. The user can actually connect different metal bonding. The portion 606 can obtain the required inductance. Since the embodiment of the present invention can meet various inductance requirements of the user, the package space can be saved, thereby improving system integration and packaging effects.
  • the first metal surrounding structure is a substrate internal connection structure
  • the second metal surrounding structure is a substrate external connection structure
  • the first metal enclosing structure is formed by the metal winding in the upper half of the trench, and the second metal enclosing structure forms the lower half of the trench. Is metal wrapping through the metal on the surface of the substrate? I wire bonding is achieved.
  • the first metal surrounding structure includes a plurality of metal windings and a plurality of metal bonding portions; the metal winding is laid on the top of the trench; the metal bonding portion is passed by the metal winding a connection hole on the substrate is formed from a side surface of the groove toward a surface of the substrate, and the metal bonding portion is disposed on both sides of the surface of the groove;
  • the second metal surrounding structure comprises a plurality of metal wires; the metal bonding portions on both sides of the surface of the groove are connected by the metal wires such that a path is formed between any two metal bonding portions to be joined.
  • the first metal surrounding structure is a substrate outer connecting structure
  • the second metal surrounding structure is a substrate outer connecting structure
  • the first metal surrounding structure is formed by the metal wire bonding on the surface of the substrate, and the second metal surrounding structure forms the lower half of the groove. Is metal enveloping also passing metal on the surface of the substrate? I wire bonding is achieved.
  • the first metal surrounding structure includes an upper surface metal winding, an upper surface metal bonding portion, and a top surface metal wire; the upper surface metal wire is laid on a side surface of the groove; the upper surface metal bonding portion is wound from the upper surface metal through a connection hole on the substrate toward the substrate
  • the upper surface is formed by extending, the upper surface metal bonding portion is disposed on two sides of the upper surface of the substrate; the upper surface metal bonding portions on both sides of the upper surface of the substrate are connected by the upper surface metal wire;
  • the second metal surrounding structure comprises a lower surface metal winding, a lower surface metal bonding portion and a lower surface metal lead; the lower surface metal winding is laid on a side of the groove; the lower surface metal bonding a portion of the lower surface metal wire is formed to extend through a connection hole on the substrate toward a lower surface of the substrate, and the lower surface metal bonding portion is disposed on both sides of a lower surface of the substrate; The lower surface metal bonding portions on both sides of the surface are connected by the lower surface metal wires.
  • the first metal surrounding structure is a substrate internal connection structure
  • the second metal surrounding structure is a substrate internal connection structure
  • the second metal enclosing structure of the second metal surrounding structure is formed by laying a metal winding in the substrate, and the first metal surrounding structure forms an upper half of the groove. Metal enclosure is also achieved by laying metal windings within the substrate.
  • the first metal surrounding structure includes a first set of metal windings
  • the first set of metal windings are laid on the top of the trench and surround the trench from the upper half; correspondingly, the second metal surrounding structure includes a second set of metal windings;
  • the second set of metal windings are laid on the bottom of the trench and surround the trench from the lower half; the first set of metal windings and the second set of metal windings are adapted such that the first set A spiral of turns is formed around the trench when the metal winding is connected to the second set of metal windings.
  • a seventh embodiment of the package structure of the present invention includes:
  • the substrate 701 is provided with a slot 702;
  • a first set of metal windings 703 is laid on the top of the trench 702, and the first set of metal windings 703 surrounds the slots 702 from the upper half;
  • a second set of metal windings 704 is laid on the bottom of the trench 702, and the second set of metal windings 704 surrounds the slots 702 from the lower half;
  • the first set of metal windings 703 and the second set of metal windings 704 are adapted such that the first set of metals
  • the winding 703 and the second set of metal windings 704 form a spiral turns around the slots 702 when they are connected through the connection holes 705 on the substrate 701.
  • an inductor core may be included to increase the inductance.
  • the inductor core may be a core or a ferrite, or a core of other materials.
  • the inductor core may be wafer mounted (Die Attach).
  • the non-conductive adhesive material (for example, glue or film) is implanted to be fixed in the slot 702, or may be fixed in the slot 702 by other means, which is not limited herein. .
  • the substrate 701 may be a substrate of a double-sided circuit layer or a substrate of a multi-layer circuit layer in a practical application.
  • the structure of the substrate of the double-sided circuit layer may include:
  • first ink layer 706a a first ink layer 706a, a second ink layer 706b, a first wiring layer 707a, a second wiring layer 707b, a core layer 708, and a filling layer 709;
  • the slot 702 is located in the core layer 708, the core layer 708 is an insulating layer; the filling layer 709 is located at the top of the slot 702, and the filling layer 709 is an insulating layer;
  • the group metal winding 703 is located at the top of the core layer 708 at the top of the first circuit layer 707a, the second group of metal windings 704 is located at the bottom of the core layer 708 at the bottom of the second circuit layer 707b;
  • connection hole 705 extends through the core layer 708 to connect the first set of metal windings 703 and the second set of metal windings 704;
  • the surface of the first wiring layer 707a is coated with a first ink layer 706a, and the surface of the second wiring layer 707b is coated with a second ink layer 706b.
  • the package structure specifically formed in this embodiment may be as shown in FIG. 8. It should be noted that, in order to facilitate the chip or device to automatically control the inductance value of the inductor, a plurality of electrical connections with the spiral wire may be disposed on the substrate.
  • the control device can be electrically connected to the metal connection portion 801 to achieve electrical connection with the spiral turns, and the control device can control the length of the spiral turns used, thereby controlling the spiral ⁇ The amount of inductance output.
  • the top of the slot 702 is provided with a first set of metal windings 703, the bottom of the slots 702 is provided with a second set of metal windings 704, and the first set of metal windings 703 and the The second set of metal windings 704 are connected through connection holes 705 on the substrate 701 to form a spiral turns around the slots 702, thereby achieving the function of inductance.
  • the user can determine the length of the spiral turns connected to the circuit according to actual needs to obtain the required inductance, and the embodiment of the present invention can satisfy various inductances of the user. Demand, therefore, can save packaging space, thereby improving system integration and packaging effects.
  • the first set of metal windings and the second set of metal windings are single-wire wound structures, that is, the spirals formed by the first set of metal windings and the second set of metal windings are The same line is ⁇ .
  • FIG. 9 is an eighth embodiment of the package structure of the present invention.
  • the first set of metal windings and the second set of metal windings form two spiral turns, that is, FIG.
  • the spiral turns 901 and the spiral turns 902 are shown. In this way, two different segments are actually wound around the slot. It can be understood that only two segments are used as an example here, and more segments may be used in practical applications, which are not limited herein.
  • a plurality of pairs of metal connecting portions 903 electrically connected to the spiral turns may be disposed on the substrate, and the control device may be electrically connected to the metal connecting portion 903 to implement In electrical connection with the helix, the control device can control the length of the helix used to control the inductance of the helix output.
  • FIG. 10 is a ninth embodiment of the package structure of the present invention.
  • the ninth embodiment of the package structure of the present invention includes:
  • the substrate 1001 is provided with a slot 1002;
  • a first set of metal windings 1003 and a third set of metal windings are laid on the top of the trench 1002.
  • the first set of metal windings 1003 and the third set of metal windings 1004 surround the slots 1002 from the upper half;
  • the third set of metal windings 1004 in this embodiment and the first set of metal windings 1003 are located in different circuit layers.
  • a second set of metal windings 1005 and a fourth set of metal windings are laid on the bottom of the trench 1002.
  • the second set of metal windings 1005 and the fourth set of metal windings 1006 surround the slots 1002 from the lower half;
  • the fourth set of metal windings 1006 in this embodiment and the second set of metal windings 1005 are located in different circuit layers.
  • the first set of metal windings 1003 and the second set of metal windings 1005 are adapted such that the first set of metal windings 1003 and the second set of metal windings 1005 are connected through the first connection holes 1007 on the substrate 1001. A spiral turns are formed around the groove 1002.
  • the third set of metal windings 1004 and the fourth set of metal windings 1006 are adapted such that the third set of metal windings 1004 and the fourth set of metal windings 1006 are connected through the second connection holes 1008 on the substrate 1001. Another spiral turns are formed around the trench 1002.
  • an inductor core may be included to increase the inductance.
  • the inductor core may be a core or a ferrite, or a core of other materials.
  • the inductor core may be wafer mounted (Die Attach).
  • the non-conductive adhesive material (for example, glue or film) is implanted to be fixed in the groove 1002, or may be fixed in the groove 1002 by other means, which is not limited herein. .
  • the substrate 1001 in this embodiment may be a substrate of a plurality of circuit layers, and the structure of the substrate may specifically include:
  • the slot 1002 is located in the core layer 1011, the core layer 1011 is an insulating layer; the first filling layer 1012 is located at the top of the slot 1002, and the first filling layer 1012 is an insulating layer;
  • the second filling layer 1013 is located around the trench 1002, and the second filling layer 1013 is an insulating layer;
  • the first set of metal windings 1003 is located on the first circuit layer 1010a at the top of the core layer 1011, and the second set of metal windings 1005 is located at the bottom of the core layer 1011 at the bottom of the second circuit layer 1010b; a third group of metal windings 1004 is located on the third circuit layer 1010c at the top of the core layer 1011, and a fourth group of metal windings 1006 is located at the bottom of the core layer 1011 at the bottom of the fourth circuit layer 1010d; a connection hole 1007 penetrating the core layer 1011 to connect the first group of metal windings
  • the second connection hole 1008 penetrates through the core layer 1011, the first filling layer 1012, and the second filling layer 1013 to connect the third group of metal windings 1004 and the fourth group of metal windings 1006;
  • the surface of the wiring layer 1010c is coated with a first ink layer 1009a, the fourth circuit layer
  • the surface of lO10 is coated with a second ink layer 1010b.
  • the package structure specifically formed in this embodiment may be as shown in FIG. 11. It should be noted that, in order to facilitate the chip or device to automatically control the inductance value of the inductor, a plurality of electrical connections with the spiral wire may be disposed on the substrate.
  • the control device can be electrically connected to the metal connection portion 1101 to achieve electrical connection with the spiral turns, and the control device can control the length of the spiral turns used, thereby controlling the spiral ⁇ The amount of inductance output.
  • each of the spiral turns includes the first The metal surrounding structure and the second metal surrounding structure, the foregoing mentioned four specific implementations of the first metal surrounding structure and the second metal surrounding structure, it is understood that in practical applications, different spiral turns may use the same Implementation methods can also be implemented in different ways.
  • the four different spiral turns may adopt the "first metal surrounding structure as the substrate outer connecting structure, and the second metal surrounding structure as the substrate inner connecting structure.
  • the structure ", or both of the first metal surrounding structure is a substrate internal connection structure, and the second metal surrounding structure is a substrate internal connection structure", which may also be other implementations, or the four different spiral turns may be respectively Different implementations are used, for example, the first spiral turns and the second spiral turns: “the first metal surrounding structure is the substrate outer connecting structure, the second metal surrounding structure is the substrate inner connecting structure", the third spiral line
  • the ⁇ and the fourth spiral ⁇ are “the first metal surrounding structure is a substrate internal connection structure, and the second metal surrounding structure is a substrate internal connection structure”, and the specific implementation manner is not limited herein.
  • an embodiment of the encapsulation method of the present invention includes:
  • the substrate in order to enable the first metal surrounding structure and the second metal surrounding structure on the substrate to be connected, the substrate may be processed to form a connecting hole.
  • the substrate can be drilled to obtain the connecting hole. It can be understood that, in practical applications, the substrate can be processed in other manners to obtain a connecting hole, which is not limited herein.
  • the inductor core it can be arranged on the substrate for accommodating electricity.
  • the groove of the core body may be specifically laser-fired or etched to obtain the groove. It can be understood that, in practical applications, the slot may or may not be provided.
  • a first metal surrounding structure and a second metal surrounding structure are disposed on the substrate;
  • a first metal surrounding structure and a second metal surrounding structure may be disposed on the substrate, such that the first metal surrounding structure and the second metal surrounding structure are connected through a connection hole on the substrate, A spiral turns are formed to achieve the function of the inductance.
  • the first metal surrounding structure and the second metal surrounding structure are respectively located at an upper portion and a lower portion of the substrate.
  • the first metal enclosure may be located at the top of the slot, the second metal enclosure may be located at the bottom of the slot, and a helix is formed around the slot.
  • the substrate and other devices encapsulated on the substrate can be encapsulated in whole or in part to obtain a package, or molded together with the entire system on the substrate into a package.
  • the packaging method in this embodiment also has a corresponding area:
  • a metal surrounding structure is a substrate outer connecting structure, and the second metal surrounding structure is a substrate inner connecting structure.
  • the second metal surrounding structure is formed by the metal winding in the substrate by laying the metal winding in the substrate, and the first metal surrounding structure forms the upper half of the groove. Is metal wrapping through the metal on the surface of the substrate? I wire bonding is achieved.
  • the second metal surrounding structure may include a plurality of metal windings and a plurality of metal bonding portions; the metal windings are laid on the bottom of the trench; the metal bonding portion is passed by the metal winding a connecting hole on the substrate is formed from a side surface of the groove toward a surface of the substrate, and the metal bonding portion is disposed on both sides of the surface of the groove;
  • the first metal surrounding structure may include a plurality of metal wires; the metal bonding portions on both sides of the surface of the groove are connected by the metal wires so that any two metal bonding portions are connected between Form a pathway.
  • Metal bonding portions are disposed on both sides of the surface of the groove;
  • a metal wire is used to connect the metal bonding portions on both sides of the surface of the groove to form a spiral turns so that a path is formed between any two metal bonding portions to be joined.
  • the first metal surrounding structure is a substrate internal connection structure
  • the second metal surrounding structure is a substrate external connection structure
  • the first metal enclosing structure is formed by the metal winding in the upper half of the trench, and the second metal enclosing structure forms the lower half of the trench. Is metal wrapping through the metal on the surface of the substrate? I wire bonding is achieved.
  • the first metal surrounding structure includes a plurality of metal windings and a plurality of metal bonding portions; the metal winding is laid on the top of the trench; the metal bonding portion is passed by the metal winding a connection hole on the substrate is formed from a side surface of the groove toward a surface of the substrate, and the metal bonding portion is disposed on both sides of the surface of the groove;
  • the second metal surrounding structure comprises a plurality of metal wires; the metal bonding portions on both sides of the surface of the groove are connected by the metal wires such that a path is formed between any two metal bonding portions to be joined.
  • Metal bonding portions are disposed on both sides of the surface of the groove;
  • a metal wire is used to connect the metal bonding portions on both sides of the surface of the groove to form a spiral turns so that a path is formed between any two metal bonding portions to be joined.
  • the first metal surrounding structure is a substrate outer connecting structure
  • the second metal surrounding structure is a substrate outer connecting structure.
  • the first metal surrounding structure is formed by the metal wire bonding on the surface of the substrate, and the second metal surrounding structure forms the lower half of the groove. Is metal enveloping also passing metal on the surface of the substrate? ) The way the wire is bonded.
  • the first metal surrounding structure includes an upper surface metal winding, an upper surface metal bonding portion, and an upper surface metal lead; the upper surface metal winding is laid on a side surface of the trench; the upper surface metal bonding The upper surface metal wire is formed by extending to the upper surface of the substrate through a connection hole on the substrate, and the upper surface metal bonding portion is disposed on both sides of the upper surface of the substrate; Upper surface metal bonding portions on both sides of the surface are connected by the upper surface metal wires;
  • the second metal surrounding structure comprises a lower surface metal winding, a lower surface metal bonding portion and a lower surface metal lead; the lower surface metal winding is laid on a side of the groove; the lower surface metal bonding a portion of the lower surface metal wire is formed to extend through a connection hole on the substrate toward a lower surface of the substrate, and the lower surface metal bonding portion is disposed on both sides of a lower surface of the substrate; The lower surface metal bonding portions on both sides of the surface are connected by the lower surface metal wires.
  • the upper surface metal bonding portion is disposed on both sides of the upper surface of the substrate;
  • the lower surface metal bonding portion is disposed on both sides of the lower surface of the substrate;
  • the lower surface metal bonding portions are joined to the lower surface metal bonding portions on both sides of the lower surface of the substrate.
  • the first metal surrounding structure is a substrate internal connection structure
  • the second metal surrounding structure is a substrate internal connection structure
  • the second metal enclosing structure of the second metal surrounding structure is formed by laying a metal wire in the substrate, and the first metal surrounding structure forms a first half of the groove.
  • the metal enveloping is also achieved by laying metal windings in the substrate.
  • the first metal surrounding structure includes a first set of metal windings
  • the first set of metal windings are laid on the top of the trench and surround the trench from the upper half; correspondingly, the second metal surrounding structure includes a second set of metal windings;
  • the second set of metal windings are laid on the bottom of the trench and surround the trench from the lower half; the first set of metal windings and the second set of metal windings are adapted such that the first set A spiral of turns is formed around the trench when the metal winding is connected to the second set of metal windings.
  • the first set of metal windings and the second set of metal windings are adapted such that a spiral turns are formed around the slots when the first set of metal windings and the second set of metal windings are connected.
  • FIG. 13 another embodiment of the packaging process of the present invention includes:
  • the substrate may be laser-fired or etched to obtain the trench, and the substrate is drilled to obtain the connecting hole. It can be understood that, in practical applications, other methods may be used.
  • the substrate is processed to obtain a groove and a connecting hole, which are not limited herein.
  • a plurality of metal windings may be laid on the bottom of the trench such that the metal winding passes through the connection hole on the substrate from the side of the trench to the surface of the substrate. Extending to form a plurality of metal bonding portions to surround the groove, the metal bonding portion is disposed on the surface of the groove On both sides.
  • the package structure formed after the completion of this step can be as shown in FIG. 14, specifically including: a first ink layer 1406a, a second ink layer 1406b, a first circuit layer 1407a, a second circuit layer 1407b, and a core layer 1408;
  • the slot 1402 is located in the core layer 1408, the core layer 1408 is an insulating layer; the metal winding 1403 is located at a second circuit layer 1407b at the bottom of the core layer 1408, the metal bonding The portion 1405 is located at the top of the core layer 1408 of the first circuit layer 1407a;
  • the connecting hole 1404 penetrates the core layer 1408 to connect the metal winding 1403 and the metal bonding portion 1405;
  • the surface of the first circuit layer 1407a is coated with a first ink layer 1406a, the second circuit layer
  • the surface of 1407b is coated with a second ink layer 1406b.
  • the metal winding and the metal lead in this embodiment may be a single-wire winding structure, a multi-wire winding structure, or a multi-layer winding structure. Specifically:
  • the metal windings laid at the bottom of the groove belong to the same spiral enthalpy; then the two ends of each metal winding extend from the two sides of the groove to the surface of the substrate, respectively, in the groove
  • Two metal bonding portions are symmetrically distributed on both sides of the surface of the pit, that is, the coils composed of all the metal windings and the metal leads are the same segment.
  • the metal windings laid at the bottom of the trough belong to different spiral turns; then the two ends of each metal winding extend from the two sides of the trough to the surface of the substrate to be in the trough
  • Two metal bonding portions are symmetrically distributed on both sides of the surface, that is, two different turns are actually wound around the groove. It can be understood that only two segments are taken as an example here, in practical application. There can be more segments in the middle, which are not limited here.
  • each metal wire extends from the two sides of the groove toward the surface of the substrate to form symmetrically distributed 2N metal bonding portions on both sides of the groove surface, the N A positive integer, and the N metal bonding portions on the same side of the groove surface are disposed on the same surface, or respectively distributed on different step surfaces, that is, one end of each metal winding may extend N metal bonds Joint department, Thereby achieving multilayer winding.
  • the inductor core can be fixed in the slot.
  • the inductor core in this embodiment can be a core or a ferrite, or a core of other materials.
  • the body may be implanted by a non-conductive bonding material (such as glue or film) for die attach to be fixed in the slot, or may be fixed in the slot by other means. , specifically here is not limited.
  • the package structure after the inductor core is fixed can be as shown in Figure 15, and the specific structure will not be described here.
  • step 1303 may not be performed.
  • a metal wire may be used to connect the metal bonding portions on both sides of the surface of the groove to form a spiral turns, so that a path is formed between any two metal bonding portions to be connected, and the obtained package structure is obtained. As shown in Figure 6, the specific structure will not be described here.
  • the inductive portion can be encapsulated or glued together with the entire system on the substrate into a package.
  • the substrate and other devices packaged on the substrate may be encapsulated to obtain a package or molded together with the entire system on the substrate into a package.
  • a plurality of pairs of metal connecting portions connected to the metal bonding portion may be disposed on the substrate, and the control device may be electrically connected to the metal connecting portion to implement In electrical connection with the helix, the control device can control the length of the helix used to control the inductance of the helix output.
  • a plurality of metal windings are laid on the bottom of the slot for accommodating the inductor core, and the metal winding extends from the side of the slot toward the surface of the substrate through the connection hole on the substrate to form a plurality of metal bonds.
  • the portion surrounds the groove, so when the metal bonding portions on both sides of the surface of the groove are electrically connected, In order to form a spiral turns, the function of the inductance is achieved.
  • the embodiment of the present invention can meet a variety of inductance requirements of the user, thereby saving package space, thereby improving system integration and packaging effects.
  • the first application scenario of the package structure of the present invention is a scenario of manually adjusting the inductance.
  • the metal leads on the surface of the trench are connected by a misalignment.
  • the user can connect different metal leads by themselves.
  • the 1601 and metal bonding portions 1602 are respectively two terminals of the inductor.
  • the second application scenario of the package structure of the present invention is a scenario in which the inductance is automatically adjusted.
  • the metal leads on the surface of the trench are connected by a misalignment.
  • Each pair of metal bonding portions is connected by a metal wire, and the metal bonding portion 1702 is a terminal of the inductor.
  • the metal bonding portions on the left side are connected to the control device 1701 by a gold finger or a pad, and the control device 1701 can determine which metal bonding portion on the left side is the other terminal of the inductor according to the currently required inductance. The farther the metal bonding portion is from the metal bonding portion 1702, the larger the inductance is, and the closer the metal bonding portion is to the metal bonding portion 1702, the smaller the inductance.
  • a third application scenario of the package structure of the present invention is a scenario of manually adjusting the inductance.
  • the metal winding at the bottom of the slot is dislocated.
  • the user can connect different metal leads by themselves.
  • a fourth application scenario of the package structure of the present invention is a scene in which the inductance is automatically adjusted.
  • the metal winding at the bottom of the slot is dislocated.
  • Each pair of metal bonding portions are connected by metal wires, and the metal bonding portion 1902 is one terminal of the inductor.
  • the metal bonding portions on the left side are connected to the control device 1901 by a gold finger or a pad, and the control device 1901 can determine which metal bonding portion on the left side is the other terminal of the inductor according to the currently required inductance. The farther the metal bonding portion is from the metal bonding portion 1902, the larger the inductance is, and the closer the metal bonding portion is to the metal bonding portion 1902, the smaller the inductance.
  • this embodiment there are a plurality of metal bonding portions.
  • the length of the conductive metal windings is different, and the inductance is different.
  • the user can actually connect different metal bonding parts to obtain the required inductance. Since the embodiment of the present invention can meet various inductance requirements of the user, the package space can be saved, thereby improving system integration and packaging effects. .

Abstract

一种封装结构以及封装方法,通过直接将电感集成于基板内部的处理以节省封装空间,从而提高系统集成度和封装的效果。该封装结构包括:基板;所述基板上设置有第一金属包围结构,以及第二金属包围结构;所述第一金属包围结构和所述第二金属包围结构通过基板上的连接孔相连接,以形成螺旋线圏。

Description

一种封装结构及其封装方法
技术领域
本发明涉及机械封装领域, 尤其涉及一种封装结构以及封装方法。
背景技术
系统级封装(SiP, System in Package )是一种将多种电子元件(如微处理 器、 存储器、 微机电系统、 光学器件、 被动电子元件等)在封装时集成在一起 的系统构装方式。
随着用户对电子元件集成度的要求越来越高, SiP技术也得到了广泛的应 用, 现有技术中, 系统级封装需要集成某些被动电子元件时, 会先将该已经制 作好的被动电子元件通过表面贴 (SMT ) 的方式焊接在基板 ( substrate )上, 然后再和其它器件封装成一个整体。
例如, 当系统需要集成电感时,会直接按照用户的需求将电感值固定的电 感填入基板中进行封装。
但是,有时候电感会超出封装体所能承受的尺寸范围, 或者用户在实际使 用过程中会需要用到不同的电感量, 为此, 现有技术的 SiP方式中, 往往需要 被迫增大封装体尺寸, 或封装多个电感量不同的电感以满足用户的需求, 然而 这样却会占用大量的空间, 影响了系统集成度和封装的效果。
发明内容
本发明实施例提供了一种封装结构及其封装方法, 能够节省封装空间,从 而提高系统集成度和封装的效果。
本发明实施例提供的封装结构, 包括基板;
所述基板上设置有第一金属包围结构以及第二金属包围结构;
所述第一金属包围结构和所述第二金属包围结构通过基板上的连接孔相 连接, 以形成螺旋线圏。
可选地, 所述基板上还开设有槽坑;
所述第一金属包围结构位于所述槽坑的顶部,所述第二金属包围结构位于 所述槽坑的底部;
所述螺旋线圏形成于所述槽坑的周围。
可选地,所述第二金属包围结构包括若干条金属绕线以及若干个金属键合 部;
所述金属绕线铺设于所述槽坑底部;
所述金属键合部由所述金属绕线通过所述基板上的连接孔从所述槽坑的 侧面向所述基板的表面延伸形成, 所述金属键合部分布于所述槽坑表面的两 侧;
所述第一金属包围结构包括若干条金属引线;
所述槽坑表面的两侧的金属键合部由所述金属引线连接,使得被连接的任 意两个金属键合部之间形成通路。
可选地, 所述槽坑底部铺设的金属绕线均属于同一个螺旋线圏; 所述每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板的表面 延伸, 以在所述槽坑表面的两侧形成对称分布的两个金属键合部。
可选地, 所述槽坑底部铺设的金属绕线属于不同的螺旋线圏;
所述每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板的表面 延伸, 以在所述槽坑表面的两侧形成对称分布的两个金属键合部。
可选地,所述每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板 的表面延伸, 以在所述槽坑表面的两侧形成对称分布的 2N个金属键合部, 所 述 N为大于 1的正整数;
位于所述槽坑表面同一侧的 N个金属键合部分布于同一表面, 或分别分 布于不同的台阶面。
可选地, 所述基板包含第一油墨层、 第二油墨层、 第一线路层、 第二线路 层以及芯板层;
所述槽坑位于所述芯板层内, 所述芯板层为绝缘层;
所述金属绕线位于所述芯板层底部的第二线路层,所述金属键合部位于所 述芯板层顶部的第一线路层;
所述连接孔贯通所述芯板层以连接所述金属绕线以及金属键合部; 所述第一线路层的表面涂覆有第一油墨层,所述第二线路层的表面涂覆有 第二油墨层。
可选地,所述第一金属包围结构包括若干条金属绕线以及若干个金属键合 部; 所述金属绕线铺设于所述槽坑顶部;
所述金属键合部由所述金属绕线通过所述基板上的连接孔从所述槽坑的 侧面向所述基板的表面延伸形成, 所述金属键合部分布于所述槽坑表面的两 侧;
所述第二金属包围结构包括若干条金属引线;
所述槽坑表面的两侧的金属键合部由所述金属引线连接,使得被连接的任 意两个金属键合部之间形成通路。
可选地, 所述第一金属包围结构包括上表面金属绕线、上表面金属键合部 以及上表面金属引线;
所述上表面金属绕线铺设于所述槽坑的侧面;
所述上表面金属键合部由所述上表面金属绕线通过所述基板上的连接孔 向所述基板的上表面延伸形成,所述上表面金属键合部分布于所述基板上表面 的两侧;
所述基板上表面的两侧的上表面金属键合部由所述上表面金属引线连接; 所述第二金属包围结构包括下表面金属绕线、下表面金属键合部以及下表 面金属引线;
所述下表面金属绕线铺设于所述槽坑的侧面;
所述下表面金属键合部由所述下表面金属绕线通过所述基板上的连接孔 向所述基板的下表面延伸形成,所述下表面金属键合部分布于所述基板下表面 的两侧;
所述基板下表面的两侧的下表面金属键合部由所述下表面金属引线连接。 可选地, 所述第一金属包围结构包括第一组金属绕线;
所述第一组金属绕线铺设于所述槽坑顶部, 并从上半部包围所述槽坑; 所述第二金属包围结构包括第二组金属绕线;
所述第二组金属绕线铺设于所述槽坑底部, 并从下半部包围所述槽坑; 所述第一组金属绕线和第二组金属绕线相适配,使得第一组金属绕线和第 二组金属绕线连接时在所述槽坑周围形成螺旋线圏。
可选地,所述第一组金属绕线和第二组金属绕线连接时形成同一个螺旋线 圏, 或形成至少两个螺旋线圏。 可选地, 所述第一金属包围结构至少还包括第三组金属绕线, 所述第三组 金属绕线与所述第一组金属绕线位于不同的线路层;
所述第三组金属绕线铺设于所述槽坑顶部, 并从上半部包围所述槽坑; 所述第二金属包围结构至少还包括第四组金属绕线,所述第四组金属绕线 与所述第二组金属绕线位于不同的线路层;
所述第四组金属绕线铺设于所述槽坑底部, 并从下半部包围所述槽坑; 所述第三组金属绕线和第四组金属绕线相适配,使得第三组金属绕线和第 四组金属绕线连接时在所述槽坑周围形成另一螺旋线圏。
可选地, 所述基板包含第一油墨层、 第二油墨层、 第一线路层、 第二线路 层、 芯板层以及填充层;
所述槽坑位于所述芯板层内, 所述芯板层为绝缘层;
所述填充层位于所述槽坑顶部, 所述填充层为绝缘层;
所述第一组金属绕线位于所述芯板层顶部的第一线路层 ,所述第二组金属 绕线位于所述芯板层底部的第二线路层;
所述连接孔贯通所述芯板层以连接所述第一组金属绕线以及第二组金属 绕线;
所述第一线路层的表面涂覆有第一油墨层,所述第二线路层的表面涂覆有 第二油墨层。
可选地, 所述基板表面设置有与所述螺旋线圏电连接的若干对金属连接 部。
可选地, 所述封装结构还包括:
设置于所述基板上的控制设备;
所述控制设备与所述金属连接部相连,用以控制所述螺旋线圏输出的电感 量。
可选地, 所述封装结构还包括:
位于所述槽坑中的电感芯体。
发明实施例提供的封装方法, 包括:
对基板进行处理以在基板上形成连接孔;
在所述基板上设置第一金属包围结构以及第二金属包围结构; 使得所述第一金属包围结构和所述第二金属包围结构通过所述基板上的 连接孔相连接, 以形成螺旋线圏;
对所述基板及基板上的其它器件进行全部或部分包封得到封装体。
可选地, 所述封装方法还包括:
对所述基板进行处理以在基板上形成槽坑;
所述在所述基板上设置第一金属包围结构以及第二金属包围结构包括: 在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一金属 包围结构;
所述螺旋线圏形成于所述槽坑的周围。
可选地,所述第二金属包围结构包括若干条金属绕线以及若干个金属键合 部, 所述第一金属包围结构包括若干条金属引线;
所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑底部铺设若干条金属绕线,并使得所述金属绕线通过基板上的 连接孔从所述槽坑的侧面向所述基板的表面延伸形成若干个金属键合部,所述 金属键合部分布于所述槽坑表面的两侧;
采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋线圏, 使得被连接的任意两个金属键合部之间形成通路。
可选地,所述第一金属包围结构包括若干条金属绕线以及若干个金属键合 部, 所述第二金属包围结构包括若干条金属引线;
所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑顶部铺设若干条金属绕线,并使得所述金属绕线通过基板上的 连接孔从所述槽坑的侧面向所述基板的表面延伸形成若干个金属键合部,所述 金属键合部分布于所述槽坑表面的两侧;
采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋线圏, 使得被连接的任意两个金属键合部之间形成通路。
可选地, 所述第一金属包围结构包括上表面金属绕线、上表面金属键合部 以及上表面金属引线, 所述第二金属包围结构包括下表面金属绕线、 下表面金 属键合部以及下表面金属引线;
所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑的侧面铺设所述上表面金属绕线,并使得所述上表面金属绕线 通过所述基板上的连接孔向所述基板的上表面延伸形成所述上表面金属键合 部, 所述上表面金属键合部分布于所述基板上表面的两侧;
采用所述上表面金属引线连接所述基板上表面的两侧的上表面金属键合 部;
在所述槽坑的侧面铺设所述下表面金属绕线,并使得所述下表面金属绕线 通过所述基板上的连接孔向所述基板的下表面延伸形成所述下表面金属键合 部, 所述下表面金属键合部分布于所述基板下表面的两侧;
采用所述下表面金属引线连接所述基板下表面的两侧的下表面金属键合 部。
可选地, 所述第一金属包围结构包括第一组金属绕线, 所述第二金属包围 结构包括第二组金属绕线;
所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑顶部铺设所述第一组金属绕线,使得所述第一组金属绕线从上 半部包围所述槽坑, 并在所述槽坑底部铺设所述第二组金属绕线,使得所述第 二组金属绕线从下半部包围所述槽坑;
所述第一组金属绕线和第二组金属绕线相适配,使得第一组金属绕线和第 二组金属绕线连接时在所述槽坑周围形成螺旋线圏。
可选地, 所述方法还包括:
在所述基板表面设置与所述螺旋线圏电连接的若干对金属连接部。
可选地, 所述方法还包括:
在所述基板上设置控制设备, 并将所述控制设备与所述金属连接部相连, 使得所述控制设备控制所述螺旋线圏输出的电感量。
可选地, 所述方法还包括:
将电感芯体固定于所述槽坑中。 从以上技术方案可以看出, 本发明实施例具有以下优点:
本发明实施例中, 基板上设置有第一金属包围结构以及第二金属包围结 构,且所述第一金属包围结构和所述第二金属包围结构通过基板上的连接孔相 连接, 以形成螺旋线圏, 从而实现电感的功能。
形成螺旋线圏后,用户就可以根据实际需求确定连接入电路的螺旋线圏的 长度以获得满足要求的电感量,由于本发明实施例可以满足用户的多种电感量 需求, 因此能够节省封装空间, 从而提高系统集成度和封装的效果。
附图说明
图 1为本发明封装结构第一实施例示意图;
图 2为本发明封装结构第二实施例示意图;
图 3为本发明封装结构第三实施例示意图;
图 4为本发明封装结构第四实施例示意图;
图 5为本发明封装结构第五实施例示意图;
图 6为本发明封装结构第六实施例示意图;
图 7为本发明封装结构第七实施例示意图;
图 8为本发明封装结构第七实施例封装效果示意图;
图 9为本发明封装结构第八实施例示意图;
图 10为本发明封装结构第九实施例示意图;
图 11为本发明封装结构第九实施封装效果例示意图;
图 12为本发明封装方法一个实施例示意图;
图 13为本发明封装方法另一实施例示意图;
图 14为本发明封装过程第一阶段示意图;
图 15为本发明封装过程第二阶段示意图;
图 16为本发明封装结构的第一应用场景示意图;
图 17为本发明封装结构的第二应用场景示意图;
图 18为本发明封装结构的第三应用场景示意图;
图 19为本发明封装结构的第四应用场景示意图。
具体实施方式
本发明实施例提供了一种封装结构及其封装方法,能够封装参数可变的被 动电子元件, 节省封装空间, 提高系统集成度和封装的效果。
本实施例中的封装结构可以包括基板;
所述基板上设置有第一金属包围结构以及第二金属包围结构;
所述第一金属包围结构和所述第二金属包围结构通过基板上的连接孔相 连接, 以形成螺旋线圏, 从而实现电感的功能。
本实施例中,基板上可以设置有用于容纳电感芯体的槽坑,也可以不设置 槽坑。
当不设置槽坑时,所述第一金属包围结构以及第二金属包围结构分别位于 所述基板的上部以及下部。
当设置槽坑时, 第一金属包围结构可以位于所述槽坑的顶部, 所述第二金 属包围结构可以位于所述槽坑的底部。
在实际应用中, 可以根据需求确定是否需要开设槽坑,从而确定第一金属 包围结构以及第二金属包围结构之间的位置关系。
在实际应用中,第一金属包围结构的具体实现方式以及第二金属包围结构 的具体实现方式可以有多种, 下面以两个例子进行说明:
一、第一金属包围结构为基板外连接结构, 第二金属包围结构为基板内连 接结构。
在本方式中,第二金属包围结构对槽坑所形成的下半部金属包围是在基板 内通过铺设金属绕线的方式实现的,而第一金属包围结构对槽坑所形成的上半 部金属包围是在基板表面通过金属? )线键合的方式实现的。
具体的,第二金属包围结构可以包括若干条金属绕线以及若干个金属键合 部; 所述金属绕线铺设于所述槽坑底部; 所述金属键合部由所述金属绕线通过 所述基板上的连接孔从所述槽坑的侧面向所述基板的表面延伸形成,所述金属 键合部分布于所述槽坑表面的两侧;
相应的, 第一金属包围结构可以包括若干条金属引线; 所述槽坑表面的两 侧的金属键合部由所述金属引线连接,使得被连接的任意两个金属键合部之间 形成通路。
下面结合附图进行详细说明, 请参阅图 1 , 本发明封装结构第一实施例包 括: 基板 101;
所述基板 101上开设有槽坑 102;
所述槽坑 102底部铺设有若干条金属绕线 104, 所述金属绕线 104通过基 板 101上的连接孔从所述槽坑 102的侧面向所述基板 101的表面延伸形成若干 个金属键合部 105, 所述金属键合部 105分布于所述槽坑 102表面的两侧; 所述槽坑 102表面的两侧的金属键合部 105由金属引线 106连接,以形成 螺旋线圏, 使得被连接的任意两个金属键合部 105之间形成通路。
需要说明的是, 为了提高电感量, 本实施例中的封装结构还可以包括电感 芯体 103, 该电感芯体 103可以设置在槽坑 102中, 可以理解的是, 在实际应 用中, 也可以不设置电感芯体 103, 具体此处不做限定。
为了形成电感的螺旋线圏,在使用金属引线连接金属键合部时,金属引线 可以错位连接, 或者金属绕线可以错位设置, 相应的, 金属绕线 104则可以采 用多种排布方式, 图 1中表示出了其中的一种,每条金属绕线都可以近似垂直 于所述电感芯体 103, 可以理解的是, 在实际应用中, 还可以有其他的排布方 式, 例如请参阅图 2, 图 2所示的实施例为本发明封装结构第二实施例, 相比 于图 1所示的第一实施例,区别仅在于金属绕线的排布方式以及金属引线的连 接方式不同。
上述图 1以及图 2描述的方案中,金属绕线以及金属引线为单线绕线结构, 也就是说,全部的金属绕线和金属引线所组成的线圏为同一段线圏,在这种绕 线结构中,槽坑底部铺设的金属绕线均属于同一个螺旋线圏; 则每条金属绕线 的两端分别从所述槽坑的两个侧面向所述基板的表面延伸,以在所述槽坑表面 的两侧形成对称分布的两个金属键合部。
可以理解的是, 在实际应用中, 除了单线绕线结构之外, 还可以有多线并 绕结构, 或者是多层绕线结构, 具体的,
当金属绕线和金属引线是多线并绕结构时, 请参阅图 3 , 图 3为本发明封 装结构第三实施例:
槽坑底部铺设的金属绕线属于不同的螺旋线圏,则当属于不同螺旋线圏的 金属绕线的两端分别从所述槽坑的两个侧面向所述基板的表面延伸时,形成的 金属键合部也属于不同的螺旋线圏,即如图 3中所示的金属键合部 301以及金 属键合部 302分别属于不同的螺旋线圏,这样就使得槽坑周围实际绕有两段不 同的线圏, 可以理解的是, 此处仅以两段为例进行说明, 在实际应用中还可以 是更多段, 此处不做限定。
当金属绕线和金属引线为多层绕线结构时, 请参阅图 4以及图 5 , 图 4为 本发明封装结构第四实施例, 图 5为本发明封装结构第五实施例:
本方式中,每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板的
N为大于 1的正整数, 也就是说, 每条金属绕线的一端可以延伸出 N个金属 键合部, 从而实现多层绕线。
需要说明的是, 位于槽坑表面同一侧的 N个金属键合部可以分布于同一 表面, 例如图 4所示实施例中, N为 2, 即每条金属绕线延伸出 4个金属键合 部,即金属键合部 401、金属键合部 402、金属键合部 403以及金属键合部 404, 每 2个金属键合部位于槽坑表面同一侧, 且位于同一平面。
可以理解的是, 位于槽坑表面同一侧的 N个金属键合部也可以分布于不 同的台阶面, 例如图 5所示实施例中, N为 2, 即每条金属绕线延伸出 4个金 属键合部, 即金属键合部 501、 金属键合部 502、 金属键合部 503以及金属键 合部 504, 其中, 金属键合部 501以及金属键合部 502位于槽坑表面同一侧, 金属键合部 503以及金属键合部 504位于槽坑表面同一侧, 且金属键合部 501 以及金属键合部 502位于不同的台阶面, 金属键合部 503以及金属键合部 504 位于不同的台阶面。
本实施例中仅以 N为 2为例进行说明, 可以理解的是, 在实际应用中, N 还可以为其他的数值, 例如 3、 4、 5等, 则相应的每条金属绕线延伸出 6个、 8个、 10个金属键合部, 具体结构类似, 此处不再赘述。
为便于理解, 下面以一具体实例对本发明封装结构进行详细描述,请参阅 图 6, 本发明封装结构第六实施例包括:
基板 601以及电感芯体 602; 所述槽坑 603底部铺设有若干条金属绕线 604, 所述金属绕线 604通过基 板 601上的连接孔 605从所述槽坑 603的侧面向所述基板 601的表面延伸形成 若干个金属键合部 606,所述金属键合部 606分布于所述槽坑 603表面的两侧。 本实施例中,每条金属绕线 604的两端可以分别从所述槽坑 603的两个侧 面向所述基板 601的表面延伸,以在所述槽坑 603表面的两侧形成对称分布的 两个金属键合部 606。
本实施例中的槽坑 603可以通过对所述基板 601进行激光烧制或者蚀刻得 到, 可以理解的是, 也可以通过其他的方式得到, 具体此处不做限定。
本实施例中的电感芯体 602 可以为磁芯或铁氧体, 或者是其他材料的芯 体, 该电感芯体 602可以采用晶片贴装( Die Attach )用的非导电粘接材料(例 如胶或膜等)植入, 以固定于所述槽坑 603中, 或者还可以通过其他的方式固 定于所述槽坑 603中, 具体此处不做限定。
上述的设置方式使得金属绕线 604 可以从底面和两个侧面包围所述槽坑 603 , 即形成对槽坑 603中的电感芯体 602的下半部金属包围结构, 为了得到 电感的螺旋线圏, 还需要在所述基板 601上设置金属引线, 以形成对槽坑 603 中的电感芯体 602的上半部金属包围结构, 具体的:
所述槽坑 603表面的两侧的金属键合部 606可以通过金属引线 610进行连 接, 以形成螺旋线圏, 使得被连接的任意两个金属键合部之间形成通路。
本实施例中的基板在实际应用中可以为双面线路层的基板或多层线路层 的基板, 具体的, 该双面线路层的基板的结构可以包括:
第一油墨层 607a、 第二油墨层 607b、 第一线路层 608a、 第二线路层 608b 以及芯板层 609 , 所述芯板层 609即为绝缘层;
所述槽坑 603位于所述芯板层 609内;
所述金属绕线 604位于所述芯板层 609底部的第二线路层 608b, 所述金 属键合部 606位于所述芯板层 609顶部的第一线路层 608a;
所述连接孔 605贯通所述芯板层 609以连接所述金属绕线 604以及金属键 合部 606;
所述第一线路层 608a 的表面涂覆有第一油墨层 607a, 所述第二线路层 608b的表面涂覆有第二油墨层 607b。
需要说明的是, 为了方便芯片或设备自动控制电感的电感值,还可以在所 述基板 601上设置有与所述金属键合部 606相连的若干对金属连接部,则控制 设备可以与该金属连接部电连接, 以实现与螺旋线圏的电连接, 则该控制设备 可以控制所使用的螺旋线圏的长度, 从而控制所述螺旋线圏输出的电感量。
本实施例中,用于容纳电感芯体 602的槽坑 603的底部铺设有若干条金属 绕线 604, 且金属绕线 604通过基板 601上的连接孔 605从槽坑 603的侧面向 基板 601的表面延伸形成若干个金属键合部 606以包围槽坑 603 , 所以当槽坑 603表面的两侧的金属键合部 606被电连接时, 则可以形成螺旋线圏, 从而实 现电感的功能。
而金属键合部 606有多个, 当连接不同的金属键合部 606时,导通的金属 绕线 604的长度也就不同, 电感量也就不同, 用户可以实际需求连接不同的金 属键合部 606以获得满足要求的电感量,由于本发明实施例可以满足用户的多 种电感量需求, 因此能够节省封装空间, 从而提高系统集成度和封装的效果。
二、第一金属包围结构为基板内连接结构, 第二金属包围结构为基板外连 接结构。
在本方式中,第一金属包围结构对槽坑所形成的上半部金属包围是在基板 内通过铺设金属绕线的方式实现的,而第二金属包围结构对槽坑所形成的下半 部金属包围是在基板表面通过金属? I线键合的方式实现的。
具体的, 第一金属包围结构包括若干条金属绕线以及若干个金属键合部; 所述金属绕线铺设于所述槽坑顶部;所述金属键合部由所述金属绕线通过所述 基板上的连接孔从所述槽坑的侧面向所述基板的表面延伸形成,所述金属键合 部分布于所述槽坑表面的两侧;
相应的, 第二金属包围结构包括若干条金属引线; 所述槽坑表面的两侧的 金属键合部由所述金属引线连接,使得被连接的任意两个金属键合部之间形成 通路。
三、第一金属包围结构为基板外连接结构, 第二金属包围结构为基板外连 接结构。
在本方式中,第一金属包围结构对槽坑所形成的上半部金属包围是在基板 表面通过金属引线键合的方式实现的,而第二金属包围结构对槽坑所形成的下 半部金属包围也是在基板表面通过金属? I线键合的方式实现的。
具体的, 第一金属包围结构包括上表面金属绕线、上表面金属键合部以及 上表面金属引线; 所述上表面金属绕线铺设于所述槽坑的侧面; 所述上表面金 属键合部由所述上表面金属绕线通过所述基板上的连接孔向所述基板的上表 面延伸形成, 所述上表面金属键合部分布于所述基板上表面的两侧; 所述基板 上表面的两侧的上表面金属键合部由所述上表面金属引线连接;
相应的, 第二金属包围结构包括下表面金属绕线、 下表面金属键合部以及 下表面金属引线; 所述下表面金属绕线铺设于所述槽坑的侧面; 所述下表面金 属键合部由所述下表面金属绕线通过所述基板上的连接孔向所述基板的下表 面延伸形成, 所述下表面金属键合部分布于所述基板下表面的两侧; 所述基板 下表面的两侧的下表面金属键合部由所述下表面金属引线连接。
四、第一金属包围结构为基板内连接结构, 第二金属包围结构为基板内连 接结构。
在本方式中,第二金属包围结构对槽坑所形成的下半部金属包围是在基板 内通过铺设金属绕线的方式实现的,且第一金属包围结构对槽坑所形成的上半 部金属包围也是在基板内通过铺设金属绕线的方式实现的。
具体的, 第一金属包围结构包括第一组金属绕线;
所述第一组金属绕线铺设于所述槽坑顶部, 并从上半部包围所述槽坑; 相应的, 第二金属包围结构包括第二组金属绕线;
所述第二组金属绕线铺设于所述槽坑底部, 并从下半部包围所述槽坑; 所述第一组金属绕线和第二组金属绕线相适配,使得第一组金属绕线和第 二组金属绕线连接时在所述槽坑周围形成螺旋线圏。
下面结合附图进行详细说明, 请参阅图 7, 本发明封装结构第七实施例包 括:
基板 701 ;
所述基板 701上开设有槽坑 702;
所述槽坑 702顶部铺设有第一组金属绕线 703 , 所述第一组金属绕线 703 从上半部包围所述槽坑 702;
所述槽坑 702底部铺设有第二组金属绕线 704, 所述第二组金属绕线 704 从下半部包围所述槽坑 702;
所述第一组金属绕线 703和第二组金属绕线 704相适配,使得第一组金属 绕线 703和第二组金属绕线 704通过基板 701上的连接孔 705连接时在所述槽 坑 702周围形成螺旋线圏。
本实施例中的还可以包含有电感芯体以提高电感量,该电感芯体可以为磁 芯或铁氧体, 或者是其他材料的芯体, 该电感芯体可以采用晶片贴装(Die Attach )用的非导电粘接材料(例如胶或膜等)植入, 以固定于所述槽坑 702 中, 或者还可以通过其他的方式固定于所述槽坑 702中, 具体此处不做限定。
需要说明的是,该基板 701在实际应用中可以为双面线路层的基板或多层 线路层的基板, 具体的, 该双面线路层的基板的结构可以包括:
第一油墨层 706a、第二油墨层 706b、第一线路层 707a,第二线路层 707b、 芯板层 708以及填充层 709;
所述槽坑 702位于所述芯板层 708内, 所述芯板层 708为绝缘层; 所述填充层 709位于所述槽坑 702顶部, 所述填充层 709为绝缘层; 所述第一组金属绕线 703位于所述芯板层 708顶部的第一线路层 707a, 所述第二组金属绕线 704位于所述芯板层 708底部的第二线路层 707b;
所述连接孔 705贯通所述芯板层 708以连接所述第一组金属绕线 703以及 第二组金属绕线 704;
所述第一线路层 707a 的表面涂覆有第一油墨层 706a, 所述第二线路层 707b的表面涂覆有第二油墨层 706b。
本实施例中具体形成的封装结构可以如图 8所示, 需要说明的是, 为了方 便芯片或设备自动控制电感的电感值,还可以在所述基板上设置有与螺旋线圏 电连接的若干对金属连接部 801 ,则控制设备可以与该金属连接部 801电连接, 以实现与螺旋线圏的电连接, 则该控制设备可以控制所使用的螺旋线圏的长 度, 从而控制所述螺旋线圏输出的电感量。
本实施例中, 槽坑 702的顶部设置有第一组金属绕线 703 , 所述槽坑 702 的底部设置有第二组金属绕线 704, 且所述第一组金属绕线 703和所述第二组 金属绕线 704通过基板 701上的连接孔 705相连接,以在所述槽坑 702周围形 成螺旋线圏, 从而实现电感的功能。
形成螺旋线圏后,用户就可以根据实际需求确定连接入电路的螺旋线圏的 长度以获得满足要求的电感量,由于本发明实施例可以满足用户的多种电感量 需求, 因此能够节省封装空间, 从而提高系统集成度和封装的效果。 上述图 7描述的方案中,第一组金属绕线和第二组金属绕线为单线绕线结 构,也就是说, 第一组金属绕线和第二组金属绕线形成的螺旋线圏为同一段线 圏。
可以理解的是, 在实际应用中, 除了单线绕线结构之外, 还可以有多线并 绕结构, 或者是多层绕线结构, 具体的,
当为多线并绕结构时, 请参阅图 9, 图 9为本发明封装结构第八实施例: 第一组金属绕线和第二组金属绕线形成两个螺旋线圏,即如图 9中所示的 螺旋线圏 901以及螺旋线圏 902。 这样就使得槽坑周围实际绕有两段不同的线 圏, 可以理解的是, 此处仅以两段为例进行说明, 在实际应用中还可以是更多 段, 此处不做限定。
为了方便芯片或设备自动控制电感的电感值,还可以在所述基板上设置有 与螺旋线圏电连接的若干对金属连接部 903 , 则控制设备可以与该金属连接部 903电连接, 以实现与螺旋线圏的电连接, 则该控制设备可以控制所使用的螺 旋线圏的长度, 从而控制所述螺旋线圏输出的电感量。
当为多层绕线结构时,请参阅图 10,图 10为本发明封装结构第九实施例: 本发明封装结构第九实施例包括:
基板 1001 ;
所述基板 1001上开设有槽坑 1002;
所述槽坑 1002 顶部铺设有第一组金属绕线 1003 以及第三组金属绕线
1004,所述第一组金属绕线 1003以及第三组金属绕线 1004从上半部包围所述 槽坑 1002;
本实施例中的第三组金属绕线 1004与所述第一组金属绕线 1003位于不同 的线路层。
所述槽坑 1002 底部铺设有第二组金属绕线 1005 以及第四组金属绕线
1006,所述第二组金属绕线 1005以及第四组金属绕线 1006从下半部包围所述 槽坑 1002;
本实施例中的第四组金属绕线 1006与所述第二组金属绕线 1005位于不同 的线路层。 所述第一组金属绕线 1003和第二组金属绕线 1005相适配,使得第一组金 属绕线 1003和第二组金属绕线 1005通过基板 1001上的第一连接孔 1007连接 时在所述槽坑 1002周围形成螺旋线圏。
所述第三组金属绕线 1004和第四组金属绕线 1006相适配,使得第三组金 属绕线 1004和第四组金属绕线 1006通过基板 1001上的第二连接孔 1008连接 时在所述槽坑 1002周围形成另一螺旋线圏。
本实施例中的还可以包含有电感芯体以提高电感量,该电感芯体可以为磁 芯或铁氧体, 或者是其他材料的芯体, 该电感芯体可以采用晶片贴装(Die Attach )用的非导电粘接材料(例如胶或膜等 )植入, 以固定于所述槽坑 1002 中, 或者还可以通过其他的方式固定于所述槽坑 1002中, 具体此处不做限定。
本实施例中的基板 1001可以为多层线路层的基板, 该基板的结构具体可 以包括:
第一油墨层 1009a、 第二油墨层 1009b、 第一线路层 1010a、 第二线路层 1010b,第三线路层 1010c,第四线路层 1010d、 芯板层 1011、第一填充层 1012 以及第二填充层 1013;
所述槽坑 1002位于所述芯板层 1011内, 所述芯板层 1011为绝缘层; 所述第一填充层 1012位于所述槽坑 1002顶部, 所述第一填充层 1012为 绝缘层;
所述第二填充层 1013位于所述槽坑 1002周围, 所述第二填充层 1013为 绝缘层;
所述第一组金属绕线 1003位于所述芯板层 1011顶部的第一线路层 1010a, 所述第二组金属绕线 1005位于所述芯板层 1011底部的第二线路层 1010b; 所述第三组金属绕线 1004位于所述芯板层 1011顶部的第三线路层 1010c, 所述第四组金属绕线 1006位于所述芯板层 1011底部的第四线路层 1010d; 所述第一连接孔 1007贯通所述芯板层 1011 以连接所述第一组金属绕线
1003以及第二组金属绕线 1005;
所述第二连接孔 1008贯通所述芯板层 1011、 第一填充层 1012以及第二 填充层 1013以连接所述第三组金属绕线 1004以及第四组金属绕线 1006; 所述第三线路层 1010c的表面涂覆有第一油墨层 1009a, 所述第四线路层 lOlOd的表面涂覆有第二油墨层 1010b。
本实施例中具体形成的封装结构可以如图 11所示, 需要说明的是, 为了 方便芯片或设备自动控制电感的电感值,还可以在所述基板上设置有与螺旋线 圏电连接的若干对金属连接部 1101 , 则控制设备可以与该金属连接部 1101电 连接, 以实现与螺旋线圏的电连接, 则该控制设备可以控制所使用的螺旋线圏 的长度, 从而控制所述螺旋线圏输出的电感量。
需要说明的是, 上述实施例中, 当金属绕线和金属引线是多线并绕结构或 者是多层绕线结构时, 可以形成多个螺旋线圏, 而每个螺旋线圏都包含第一金 属包围结构以及第二金属包围结构,前述提到了第一金属包围结构以及第二金 属包围结构的四种具体实现方式, 可以理解的是, 在实际应用中, 不同的螺旋 线圏可以采用相同的实现方式, 也可以采用不同的实现方式。
例如在多线并绕结构中有四个不同的螺旋线圏,则这四个不同的螺旋线圏 可以均采用 "第一金属包围结构为基板外连接结构, 第二金属包围结构为基板 内连接结构", 或都采用 "第一金属包围结构为基板内连接结构, 第二金属包 围结构为基板内连接结构", 也可以均为其他实现方式, 或者, 这四个不同的 螺旋线圏可以分别采用不同的实现方式,例如第一个螺旋线圏和第二个螺旋线 圏采用 "第一金属包围结构为基板外连接结构, 第二金属包围结构为基板内连 接结构", 第三个螺旋线圏和第四个螺旋线圏采用 "第一金属包围结构为基板 内连接结构, 第二金属包围结构为基板内连接结构"等, 具体实现方式此处不 做限定。
上面对本发明实施例中的封装结构进行了描述,下面对本发明实施例中的 封装方法进行描述, 请参阅图 12, 本发明封装方法一个实施例包括:
1201、 对基板进行处理以在基板上形成连接孔;
本实施例中,为了使得基板上的第一金属包围结构以及第二金属包围结构 能够连接, 可以对基板进行处理形成连接孔。
具体的, 可以对所述基板进行钻孔得到所述连接孔, 可以理解的是, 在实 际应用中,还可以采用其他的方式对基板进行处理得到连接孔, 具体此处不做 限定。
需要说明的是,如果需要容纳电感芯体, 则可以在基板上设置用于容纳电 感芯体的槽坑, 具体可以对所述基板进行激光烧制或者蚀刻得到所述槽坑。 可以理解的是, 在实际应用中, 可以设置该槽坑, 也可以不设置该槽坑。
1202、 在基板上设置第一金属包围结构以及第二金属包围结构;
本实施例中, 可以在基板上设置第一金属包围结构以及第二金属包围结 构,使得所述第一金属包围结构和所述第二金属包围结构通过所述基板上的连 接孔相连接, 以形成螺旋线圏, 从而实现电感的功能。
本实施例中, 当不设置槽坑时, 所述第一金属包围结构以及第二金属包围 结构分别位于所述基板的上部以及下部。
当设置槽坑时, 第一金属包围结构可以位于所述槽坑的顶部, 所述第二金 属包围结构可以位于所述槽坑的底部, 且螺旋线圏形成于所述槽坑周围。
在实际应用中, 可以根据需求确定是否需要开设槽坑,从而确定第一金属 包围结构以及第二金属包围结构之间的位置关系。
1203、 对基板及基板上的其它器件进行全部或部分包封得到封装体。
形成螺旋线圏之后,则可以将基板及其封装于基板的其他器件进行全部或 部分包封得到封装体, 或者与基板上的整个系统一起塑封(molding )成一个 封装体。
在实际应用中,第一金属包围结构的具体实现方式以及第二金属包围结构 的具体实现方式可以有多种,因此,本实施例中的封装方法也相应的有所区另 ij : 一、第一金属包围结构为基板外连接结构, 第二金属包围结构为基板内连 接结构。
在本方式中,第二金属包围结构对槽坑所形成的下半部金属包围是在基板 内通过铺设金属绕线的方式实现的,而第一金属包围结构对槽坑所形成的上半 部金属包围是在基板表面通过金属? I线键合的方式实现的。
具体的,第二金属包围结构可以包括若干条金属绕线以及若干个金属键合 部; 所述金属绕线铺设于所述槽坑底部; 所述金属键合部由所述金属绕线通过 所述基板上的连接孔从所述槽坑的侧面向所述基板的表面延伸形成,所述金属 键合部分布于所述槽坑表面的两侧;
相应的, 第一金属包围结构可以包括若干条金属引线; 所述槽坑表面的两 侧的金属键合部由所述金属引线连接,使得被连接的任意两个金属键合部之间 形成通路。
本实施例中在槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第 一金属包围结构的具体过程包括:
在所述槽坑底部铺设若干条金属绕线,并使得所述金属绕线通过基板上的 连接孔从所述槽坑的侧面向所述基板的表面延伸形成若干个金属键合部,所述 金属键合部分布于所述槽坑表面的两侧;
采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋线圏, 使得被连接的任意两个金属键合部之间形成通路。
二、第一金属包围结构为基板内连接结构, 第二金属包围结构为基板外连 接结构。
在本方式中,第一金属包围结构对槽坑所形成的上半部金属包围是在基板 内通过铺设金属绕线的方式实现的,而第二金属包围结构对槽坑所形成的下半 部金属包围是在基板表面通过金属? I线键合的方式实现的。
具体的, 第一金属包围结构包括若干条金属绕线以及若干个金属键合部; 所述金属绕线铺设于所述槽坑顶部;所述金属键合部由所述金属绕线通过所述 基板上的连接孔从所述槽坑的侧面向所述基板的表面延伸形成,所述金属键合 部分布于所述槽坑表面的两侧;
相应的, 第二金属包围结构包括若干条金属引线; 所述槽坑表面的两侧的 金属键合部由所述金属引线连接,使得被连接的任意两个金属键合部之间形成 通路。
本实施例中在槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第 一金属包围结构的具体过程包括:
在所述槽坑顶部铺设若干条金属绕线,并使得所述金属绕线通过基板上的 连接孔从所述槽坑的侧面向所述基板的表面延伸形成若干个金属键合部,所述 金属键合部分布于所述槽坑表面的两侧;
采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋线圏, 使得被连接的任意两个金属键合部之间形成通路。
三、第一金属包围结构为基板外连接结构, 第二金属包围结构为基板外连 接结构。 在本方式中,第一金属包围结构对槽坑所形成的上半部金属包围是在基板 表面通过金属引线键合的方式实现的,而第二金属包围结构对槽坑所形成的下 半部金属包围也是在基板表面通过金属? )线键合的方式实现的。
具体的, 第一金属包围结构包括上表面金属绕线、上表面金属键合部以及 上表面金属引线; 所述上表面金属绕线铺设于所述槽坑的侧面; 所述上表面金 属键合部由所述上表面金属绕线通过所述基板上的连接孔向所述基板的上表 面延伸形成, 所述上表面金属键合部分布于所述基板上表面的两侧; 所述基板 上表面的两侧的上表面金属键合部由所述上表面金属引线连接;
相应的, 第二金属包围结构包括下表面金属绕线、 下表面金属键合部以及 下表面金属引线; 所述下表面金属绕线铺设于所述槽坑的侧面; 所述下表面金 属键合部由所述下表面金属绕线通过所述基板上的连接孔向所述基板的下表 面延伸形成, 所述下表面金属键合部分布于所述基板下表面的两侧; 所述基板 下表面的两侧的下表面金属键合部由所述下表面金属引线连接。
本实施例中在槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第 一金属包围结构的具体过程包括:
在所述槽坑的侧面铺设所述上表面金属绕线,并使得所述上表面金属绕线 通过所述基板上的连接孔向所述基板的上表面延伸形成所述上表面金属键合 部, 所述上表面金属键合部分布于所述基板上表面的两侧;
采用所述上表面金属引线连接所述基板上表面的两侧的上表面金属键合 部;
在所述槽坑的侧面铺设所述下表面金属绕线,并使得所述下表面金属绕线 通过所述基板上的连接孔向所述基板的下表面延伸形成所述下表面金属键合 部, 所述下表面金属键合部分布于所述基板下表面的两侧;
采用所述下表面金属引线连接所述基板下表面的两侧的下表面金属键合 部。
四、第一金属包围结构为基板内连接结构, 第二金属包围结构为基板内连 接结构。
在本方式中,第二金属包围结构对槽坑所形成的下半部金属包围是在基板 内通过铺设金属绕线的方式实现的,且第一金属包围结构对槽坑所形成的上半 部金属包围也是在基板内通过铺设金属绕线的方式实现的。
具体的, 第一金属包围结构包括第一组金属绕线;
所述第一组金属绕线铺设于所述槽坑顶部, 并从上半部包围所述槽坑; 相应的, 第二金属包围结构包括第二组金属绕线;
所述第二组金属绕线铺设于所述槽坑底部, 并从下半部包围所述槽坑; 所述第一组金属绕线和第二组金属绕线相适配,使得第一组金属绕线和第 二组金属绕线连接时在所述槽坑周围形成螺旋线圏。
本实施例中在槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第 一金属包围结构的具体过程包括:
在所述槽坑顶部铺设所述第一组金属绕线,使得所述第一组金属绕线从上 半部包围所述槽坑, 并在所述槽坑底部铺设所述第二组金属绕线,使得所述第 二组金属绕线从下半部包围所述槽坑;
所述第一组金属绕线和第二组金属绕线相适配,使得第一组金属绕线和第 二组金属绕线连接时在所述槽坑周围形成螺旋线圏。
为便于理解,下面以上述的方式一为例,对本发明封装过程进行详细描述, 请参阅图 13 , 本发明封装过程另一实施例包括:
1301、对基板进行处理以在基板上形成用于容纳电感芯体的槽坑以及连接 孔;
本实施例中, 为了容纳电感芯体以及便于走线形成金属键合部, 所以需要 对基板进行处理以在基板上形成槽坑以及连接孔。
具体的, 可以对所述基板进行激光烧制或者蚀刻得到所述槽坑,对所述基 板进行钻孔得到所述连接孔, 可以理解的是, 在实际应用中, 还可以采用其他 的方式对基板进行处理得到槽坑以及连接孔, 具体此处不做限定。
1302、在所述槽坑底部铺设若干条金属绕线, 并使得所述金属绕线通过基 板上的连接孔从所述槽坑的侧面向所述基板的表面延伸形成若干个金属键合 部以包围槽坑;
本实施例中,当形成槽坑之后,可以在所述槽坑底部铺设若干条金属绕线, 使得所述金属绕线通过基板上的连接孔从所述槽坑的侧面向所述基板的表面 延伸形成若干个金属键合部以包围槽坑,所述金属键合部分布于所述槽坑表面 的两侧。
本步骤执行完成之后形成的封装结构可以如图 14所示, 具体包括: 第一油墨层 1406a、 第二油墨层 1406b、 第一线路层 1407a、 第二线路层 1407b以及芯板层 1408;
所述槽坑 1402位于所述芯板层 1408内, 所述芯板层 1408为绝缘层; 所述金属绕线 1403位于所述芯板层 1408底部的第二线路层 1407b, 所述 金属键合部 1405位于所述芯板层 1408顶部的第一线路层 1407a;
所述连接孔 1404贯通所述芯板层 1408以连接所述金属绕线 1403以及金 属键合部 1405;
所述第一线路层 1407a的表面涂覆有第一油墨层 1406a, 所述第二线路层
1407b的表面涂覆有第二油墨层 1406b。
本实施例中的金属绕线和金属引线可以是单线绕线结构,也可以是多线并 绕结构, 还可以是多层绕线结构, 具体的:
当金属绕线和金属引线为单线绕线结构时:
所述槽坑底部铺设的金属绕线均属于同一个螺旋线圏;则每条金属绕线的 两端分别从所述槽坑的两个侧面向所述基板的表面延伸 ,以在所述槽坑表面的 两侧形成对称分布的两个金属键合部,即全部的金属绕线和金属引线所组成的 线圏为同一段线圏。
当金属绕线和金属引线为多线并绕结构时:
所述槽坑底部铺设的金属绕线属于不同的螺旋线圏;则每条金属绕线的两 端分别从所述槽坑的两个侧面向所述基板的表面延伸 ,以在所述槽坑表面的两 侧形成对称分布的两个金属键合部,也就是说槽坑周围实际绕有两段不同的线 圏, 可以理解的是, 此处仅以两段为例进行说明, 在实际应用中还可以是更多 段, 此处不做限定。
当金属绕线和金属引线为多层绕线结构时:
每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板的表面延伸, 以在所述槽坑表面的两侧形成对称分布的 2N个金属键合部,所述 N为正整数, 且位于槽坑表面同一侧的 N个金属键合部分布于同一表面, 或分别分布于不 同的台阶面, 也就是说, 每条金属绕线的一端可以延伸出 N个金属键合部, 从而实现多层绕线。
1303、 将所述电感芯体固定于所述槽坑中;
当基板制作完成之后, 则可以将所述电感芯体固定于所述槽坑中, 本实施 例中的电感芯体可以为磁芯或铁氧体, 或者是其他材料的芯体, 该电感芯体可 以采用晶片贴装(Die Attach )用的非导电粘接材料(例如胶或膜等)植入, 以固定于所述槽坑中, 或者还可以通过其他的方式固定于所述槽坑中, 具体此 处不做限定。
电感芯体固定完成后的封装结构可以如图 15所示, 具体结构此处不再赘 述。
可以理解的是,插入电感芯体可以提高电感量,如果在实际应用中无需过 大的电感量, 也可以不插入电感芯体, 则可以不执行步骤 1303。
1304、采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋 线圏;
本实施例中, 可以采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋线圏,使得被连接的任意两个金属键合部之间形成通路,得到的封 装结构可以如图 6所示, 具体结构此处不再赘述。
1305、 对所述基板以及电感芯体进行包封得到封装体。
当金属引线连接完成后, 则可以将电感部分进行胶封保护, 或者与基板上 的整个系统一起塑封(molding )成一个封装体。
需要说明的是,如果未插入电感芯体, 则可以将基板及其封装于基板的其 他器件进行包封得到封装体, 或者与基板上的整个系统一起塑封(molding ) 成一个封装体。
为了方便芯片或设备自动控制电感的电感值,还可以在所述基板上设置有 与所述金属键合部相连的若干对金属连接部,则控制设备可以与该金属连接部 电连接, 以实现与螺旋线圏的电连接, 则该控制设备可以控制所使用的螺旋线 圏的长度, 从而控制所述螺旋线圏输出的电感量。
本实施例中, 用于容纳电感芯体的槽坑的底部铺设有若干条金属绕线,且 金属绕线通过基板上的连接孔从槽坑的侧面向基板的表面延伸形成若干个金 属键合部以包围槽坑, 所以当槽坑表面的两侧的金属键合部被电连接时, 则可 以形成螺旋线圏, 从而实现电感的功能。
而金属键合部有多个, 当连接不同的金属键合部时,导通的金属绕线的长 度也就不同, 电感量也就不同, 用户可以实际需求连接不同的金属键合部以获 得满足要求的电感量, 由于本发明实施例可以满足用户的多种电感量需求, 因 此能够节省封装空间, 从而提高系统集成度和封装的效果。 行描述:
请参阅图 16, 本发明封装结构的第一应用场景为手动调节电感量的场景: 本实施例中, 槽坑表面的金属引线采用错位连接的方式。
当需要特定电感值时, 用户可以自行连接不同的金属引线, 连接的金属引 线数目越多, 则电感量越大,连接的金属引线数目越少,则电感量越小,其中, 金属键合部 1601和金属键合部 1602分别为电感的两个端子。
请参阅图 17, 本发明封装结构的第二应用场景为自动调节电感量的场景: 本实施例中, 槽坑表面的金属引线采用错位连接的方式。
每一对金属键合部均通过金属引线连接, 金属键合部 1702为电感的一个 端子。
左侧的各金属键合部通过金手指或焊盘连接到控制装置 1701 , 控制装置 1701 可以 ^据当前所需的电感量确定左侧的哪一个金属键合部作为电感的另 一个端子, 选择的金属键合部距离金属键合部 1702越远, 则电感量越大, 选 择的金属键合部距离金属键合部 1702越近, 则电感量越小。
请参阅图 18, 本发明封装结构的第三应用场景为手动调节电感量的场景: 本实施例中, 槽坑底部的金属绕线采用错位设置的方式。
当需要特定电感值时, 用户可以自行连接不同的金属引线, 连接的金属引 线数目越多, 则电感量越大,连接的金属引线数目越少,则电感量越小,其中, 金属键合部 1801和金属键合部 1802分别为电感的两个端子。
请参阅图 19, 本发明封装结构的第四应用场景为自动调节电感量的场景: 本实施例中, 槽坑底部的金属绕线采用错位设置的方式。
每一对金属键合部均通过金属引线连接, 金属键合部 1902为电感的一个 端子。 左侧的各金属键合部通过金手指或焊盘连接到控制装置 1901 , 控制装置 1901 可以 ^据当前所需的电感量确定左侧的哪一个金属键合部作为电感的另 一个端子, 选择的金属键合部距离金属键合部 1902越远, 则电感量越大, 选 择的金属键合部距离金属键合部 1902越近, 则电感量越小。
由上述的各应用场景可以看出, 本实施例中, 金属键合部有多个, 当连接 不同的金属键合部时, 导通的金属绕线的长度也就不同, 电感量也就不同, 用 户可以实际需求连接不同的金属键合部以获得满足要求的电感量,由于本发明 实施例可以满足用户的多种电感量需求, 因此能够节省封装空间,从而提高系 统集成度和封装的效果。
以上所述, 以上实施例仅用以说明本发明的技术方案, 而非对其限制; 尽 管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理 解: 其依然可以对前述各实施例所记载的技术方案进行修改, 或者对其中部分 技术特征进行等同替换; 而这些修改或者替换, 并不使相应技术方案的本质脱 离本发明各实施例技术方案的精神和范围。

Claims

权 利 要 求
1、 一种封装结构, 其特征在于, 包括基板;
所述基板上设置有第一金属包围结构, 以及第二金属包围结构; 所述第一金属包围结构和所述第二金属包围结构通过基板上的连接孔相 连接, 以形成螺旋线圏。
2、 根据权利要求 1所述的封装结构, 其特征在于,
所述基板上还开设有槽坑;
所述第一金属包围结构位于所述槽坑的顶部,所述第二金属包围结构位于 所述槽坑的底部;
所述螺旋线圏形成于所述槽坑的周围。
3、 根据权利要求 2所述的封装结构, 其特征在于,
所述第二金属包围结构包括若干条金属绕线以及若干个金属键合部; 所述金属绕线铺设于所述槽坑底部;
所述金属键合部由所述金属绕线通过所述基板上的连接孔从所述槽坑的 侧面向所述基板的表面延伸形成, 所述金属键合部分布于所述槽坑表面的两 侧;
所述第一金属包围结构包括若干条金属引线;
所述槽坑表面的两侧的金属键合部由所述金属引线连接,使得被连接的任 意两个金属键合部之间形成通路。
4、 根据权利要求 3所述封装结构, 其特征在于,
所述槽坑底部铺设的金属绕线均属于同一个螺旋线圏;
所述每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板的表面 延伸, 以在所述槽坑表面的两侧形成对称分布的两个金属键合部。
5、 根据权利要求 3所述的封装结构, 其特征在于,
所述槽坑底部铺设的金属绕线属于不同的螺旋线圏;
所述每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板的表面 延伸, 以在所述槽坑表面的两侧形成对称分布的两个金属键合部。
6、 根据权利要求 3所述的封装结构, 其特征在于,
所述每条金属绕线的两端分别从所述槽坑的两个侧面向所述基板的表面 延伸, 以在所述槽坑表面的两侧形成对称分布的 2N个金属键合部, 所述 N为 大于 1的正整数;
位于所述槽坑表面同一侧的 N个金属键合部分布于同一表面, 或分别分 布于不同的台阶面。
7、 根据权利要求 3至 6中任一项所述的封装结构, 其特征在于, 所述基板包含第一油墨层、 第二油墨层、 第一线路层、 第二线路层以及芯 板层;
所述槽坑位于所述芯板层内, 所述芯板层为绝缘层;
所述金属绕线位于所述芯板层底部的第二线路层,所述金属键合部位于所 述芯板层顶部的第一线路层;
所述连接孔贯通所述芯板层以连接所述金属绕线以及金属键合部; 所述第一线路层的表面涂覆有第一油墨层,所述第二线路层的表面涂覆有 第二油墨层。
8、 根据权利要求 2所述的封装结构, 其特征在于,
所述第一金属包围结构包括若干条金属绕线以及若干个金属键合部; 所述金属绕线铺设于所述槽坑顶部;
所述金属键合部由所述金属绕线通过所述基板上的连接孔从所述槽坑的 侧面向所述基板的表面延伸形成, 所述金属键合部分布于所述槽坑表面的两 侧;
所述第二金属包围结构包括若干条金属引线;
所述槽坑表面的两侧的金属键合部由所述金属引线连接,使得被连接的任 意两个金属键合部之间形成通路。
9、 根据权利要求 2所述的封装结构, 其特征在于,
所述第一金属包围结构包括上表面金属绕线、上表面金属键合部以及上表 面金属引线;
所述上表面金属绕线铺设于所述槽坑的侧面;
所述上表面金属键合部由所述上表面金属绕线通过所述基板上的连接孔 向所述基板的上表面延伸形成,所述上表面金属键合部分布于所述基板上表面 的两侧; 所述基板上表面的两侧的上表面金属键合部由所述上表面金属引线连接; 所述第二金属包围结构包括下表面金属绕线、下表面金属键合部以及下表 面金属引线;
所述下表面金属绕线铺设于所述槽坑的侧面;
所述下表面金属键合部由所述下表面金属绕线通过所述基板上的连接孔 向所述基板的下表面延伸形成,所述下表面金属键合部分布于所述基板下表面 的两侧;
所述基板下表面的两侧的下表面金属键合部由所述下表面金属引线连接。
10、 根据权利要求 2所述的封装结构, 其特征在于,
所述第一金属包围结构包括第一组金属绕线;
所述第一组金属绕线铺设于所述槽坑顶部, 并从上半部包围所述槽坑; 所述第二金属包围结构包括第二组金属绕线;
所述第二组金属绕线铺设于所述槽坑底部, 并从下半部包围所述槽坑; 所述第一组金属绕线和第二组金属绕线相适配,使得第一组金属绕线和第 二组金属绕线连接时在所述槽坑周围形成螺旋线圏。
11、 根据权利要求 10所述的封装结构, 其特征在于,
所述第一组金属绕线和第二组金属绕线连接时形成同一个螺旋线圏,或形 成至少两个螺旋线圏。
12、 根据权利要求 10所述的封装结构, 其特征在于,
所述第一金属包围结构至少还包括第三组金属绕线,所述第三组金属绕线 与所述第一组金属绕线位于不同的线路层;
所述第三组金属绕线铺设于所述槽坑顶部, 并从上半部包围所述槽坑; 所述第二金属包围结构至少还包括第四组金属绕线,所述第四组金属绕线 与所述第二组金属绕线位于不同的线路层;
所述第四组金属绕线铺设于所述槽坑底部, 并从下半部包围所述槽坑; 所述第三组金属绕线和第四组金属绕线相适配,使得第三组金属绕线和第 四组金属绕线连接时在所述槽坑周围形成另一螺旋线圏。
13、 根据权利要求 10至 12中任一项所述的封装结构, 其特征在于, 所述基板包含第一油墨层、 第二油墨层、 第一线路层、 第二线路层、 芯板 层以及填充层;
所述槽坑位于所述芯板层内, 所述芯板层为绝缘层;
所述填充层位于所述槽坑顶部, 所述填充层为绝缘层;
所述第一组金属绕线位于所述芯板层顶部的第一线路层 ,所述第二组金属 绕线位于所述芯板层底部的第二线路层;
所述连接孔贯通所述芯板层以连接所述第一组金属绕线以及第二组金属 绕线;
所述第一线路层的表面涂覆有第一油墨层,所述第二线路层的表面涂覆有 第二油墨层。
14、根据权利要求 1至 6、 8至 12中任一项所述的封装结构,其特征在于, 所述基板表面设置有与所述螺旋线圏电连接的若干对金属连接部。
15、 根据权利要求 14所述的封装结构, 其特征在于, 所述封装结构还包 括:
设置于所述基板上的控制设备;
所述控制设备与所述金属连接部相连,用以控制所述螺旋线圏输出的电感 量。
16、根据权利要求 1至 6、 8至 12中任一项所述的封装结构,其特征在于, 所述封装结构还包括:
位于所述槽坑中的电感芯体。
17、 一种封装方法, 其特征在于, 包括:
对基板进行处理以在基板上形成连接孔;
在所述基板上设置第一金属包围结构以及第二金属包围结构;
使得所述第一金属包围结构和所述第二金属包围结构通过所述基板上的 连接孔相连接, 以形成螺旋线圏;
对所述基板及基板上的其它器件进行全部或部分包封得到封装体。
18、 根据权利要求 17所述的封装方法, 其特征在于, 所述方法还包括: 对所述基板进行处理以在基板上形成槽坑;
所述在所述基板上设置第一金属包围结构以及第二金属包围结构包括: 在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一金属 包围结构;
所述螺旋线圏形成于所述槽坑的周围。
19、 根据权利要求 18所述的封装方法, 其特征在于, 所述第二金属包围 结构包括若干条金属绕线以及若干个金属键合部,所述第一金属包围结构包括 若干条金属引线;
所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑底部铺设若干条金属绕线,并使得所述金属绕线通过基板上的 连接孔从所述槽坑的侧面向所述基板的表面延伸形成若干个金属键合部,所述 金属键合部分布于所述槽坑表面的两侧;
采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋线圏, 使得被连接的任意两个金属键合部之间形成通路。
20、 根据权利要求 18所述的封装方法, 其特征在于, 所述第一金属包围 结构包括若干条金属绕线以及若干个金属键合部,所述第二金属包围结构包括 若干条金属引线;
所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑顶部铺设若干条金属绕线,并使得所述金属绕线通过基板上的 连接孔从所述槽坑的侧面向所述基板的表面延伸形成若干个金属键合部,所述 金属键合部分布于所述槽坑表面的两侧;
采用金属引线连接所述槽坑表面的两侧的金属键合部, 以形成螺旋线圏, 使得被连接的任意两个金属键合部之间形成通路。
21、 根据权利要求 18所述的封装方法, 其特征在于, 所述第一金属包围 结构包括上表面金属绕线、上表面金属键合部以及上表面金属引线, 所述第二 金属包围结构包括下表面金属绕线、 下表面金属键合部以及下表面金属引线; 所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑的侧面铺设所述上表面金属绕线,并使得所述上表面金属绕线 通过所述基板上的连接孔向所述基板的上表面延伸形成所述上表面金属键合 部, 所述上表面金属键合部分布于所述基板上表面的两侧;
采用所述上表面金属引线连接所述基板上表面的两侧的上表面金属键合 部;
在所述槽坑的侧面铺设所述下表面金属绕线,并使得所述下表面金属绕线 通过所述基板上的连接孔向所述基板的下表面延伸形成所述下表面金属键合 部, 所述下表面金属键合部分布于所述基板下表面的两侧;
采用所述下表面金属引线连接所述基板下表面的两侧的下表面金属键合 部。
22、 根据权利要求 18所述的封装方法, 其特征在于, 所述第一金属包围 结构包括第一组金属绕线, 所述第二金属包围结构包括第二组金属绕线; 所述在所述槽坑底部设置第二金属包围结构,并在所述槽坑顶部设置第一 金属包围结构包括:
在所述槽坑顶部铺设所述第一组金属绕线,使得所述第一组金属绕线从上 半部包围所述槽坑, 并在所述槽坑底部铺设所述第二组金属绕线,使得所述第 二组金属绕线从下半部包围所述槽坑;
所述第一组金属绕线和第二组金属绕线相适配,使得第一组金属绕线和第 二组金属绕线连接时在所述槽坑周围形成螺旋线圏。
23、 根据权利要求 17至 22中任一项所述的封装方法, 其特征在于, 所述 方法还包括:
在所述基板表面设置与所述螺旋线圏电连接的若干对金属连接部。
24、 根据权利要求 23所述的封装方法, 其特征在于, 所述方法还包括: 在所述基板上设置控制设备, 并将所述控制设备与所述金属连接部相连, 使得所述控制设备控制所述螺旋线圏输出的电感量。
25、 根据权利要求 17至 22中任一项所述的封装方法, 其特征在于, 所述 方法还包括:
将电感芯体固定于所述槽坑中。
PCT/CN2012/075753 2012-05-18 2012-05-18 一种封装结构及其封装方法 WO2013170485A1 (zh)

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CN102176450A (zh) * 2011-03-22 2011-09-07 南通富士通微电子股份有限公司 高密度系统级封装结构
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