WO2013109954A3 - Nonvolatile memory device using a tunnel oxide as a passive current steering element - Google Patents

Nonvolatile memory device using a tunnel oxide as a passive current steering element Download PDF

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Publication number
WO2013109954A3
WO2013109954A3 PCT/US2013/022242 US2013022242W WO2013109954A3 WO 2013109954 A3 WO2013109954 A3 WO 2013109954A3 US 2013022242 W US2013022242 W US 2013022242W WO 2013109954 A3 WO2013109954 A3 WO 2013109954A3
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WO
WIPO (PCT)
Prior art keywords
resistive switching
memory device
nonvolatile memory
current limiting
switching memory
Prior art date
Application number
PCT/US2013/022242
Other languages
French (fr)
Other versions
WO2013109954A2 (en
Inventor
Mihir TENDULKAR
Imran Hashim
Yun Wang
Original Assignee
Kabushiki Kaisha Toshiba
Sandisk 3D Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba, Sandisk 3D Llc filed Critical Kabushiki Kaisha Toshiba
Publication of WO2013109954A2 publication Critical patent/WO2013109954A2/en
Publication of WO2013109954A3 publication Critical patent/WO2013109954A3/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
PCT/US2013/022242 2012-01-19 2013-01-18 Nonvolatile memory device using a tunnel oxide as a passive current steering element WO2013109954A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/354,006 2012-01-19
US13/354,006 US8698119B2 (en) 2012-01-19 2012-01-19 Nonvolatile memory device using a tunnel oxide as a current limiter element

Publications (2)

Publication Number Publication Date
WO2013109954A2 WO2013109954A2 (en) 2013-07-25
WO2013109954A3 true WO2013109954A3 (en) 2014-05-15

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Family Applications (1)

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US (2) US8698119B2 (en)
WO (1) WO2013109954A2 (en)

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JP7005604B2 (en) * 2016-09-22 2022-01-21 アイキューイー ピーエルシー Integrated epitaxial metal electrode
TWI612701B (en) * 2017-01-25 2018-01-21 華邦電子股份有限公司 Conductive-bridging random access memory and method for fabricating the same
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CN108807667B (en) * 2018-05-30 2020-08-04 华中科技大学 Three-dimensional stacked memory and preparation method thereof
KR20200073716A (en) * 2018-12-14 2020-06-24 에스케이하이닉스 주식회사 Variable Resistive Semiconductor Device Having an Oxidation-Resistance Electrode
US10916698B2 (en) 2019-01-29 2021-02-09 Toshiba Memory Corporation Semiconductor storage device including hexagonal insulating layer
US20220149802A1 (en) * 2019-02-28 2022-05-12 Sang Jeong An High purity piezoelectric thin film and method of manufacturing element using same thin film
US11532698B2 (en) * 2019-09-11 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion barrier layer in top electrode to increase break down voltage
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