WO2013081853A3 - Doping carbon nanotubes and graphene for improving electronic mobility - Google Patents

Doping carbon nanotubes and graphene for improving electronic mobility Download PDF

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Publication number
WO2013081853A3
WO2013081853A3 PCT/US2012/065497 US2012065497W WO2013081853A3 WO 2013081853 A3 WO2013081853 A3 WO 2013081853A3 US 2012065497 W US2012065497 W US 2012065497W WO 2013081853 A3 WO2013081853 A3 WO 2013081853A3
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
electronic mobility
transistor device
channel region
effect transistor
Prior art date
Application number
PCT/US2012/065497
Other languages
French (fr)
Other versions
WO2013081853A2 (en
Inventor
Ali Afzali-Ardakani
Chandra BHUPESH
George S. Tulevski
Original Assignee
International Business Machines Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corporation filed Critical International Business Machines Corporation
Priority to CN201280057589.8A priority Critical patent/CN103946964B/en
Publication of WO2013081853A2 publication Critical patent/WO2013081853A2/en
Publication of WO2013081853A3 publication Critical patent/WO2013081853A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

Abstract

A method and an apparatus for doping a graphene or nanotube thin-film fieldeffect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device. An apparatus that includes a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility, and contact metal disposed over the doped channel region of the graphene or nanotube thin-film field-effect transistor device.
PCT/US2012/065497 2011-11-29 2012-11-16 Doping carbon nanotubes and graphene for improving electronic mobility WO2013081853A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201280057589.8A CN103946964B (en) 2011-11-29 2012-11-16 Doped carbon nanometer pipe and Graphene are used to improve electron mobility

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/306,357 US8772910B2 (en) 2011-11-29 2011-11-29 Doping carbon nanotubes and graphene for improving electronic mobility
US13/306,357 2011-11-29

Publications (2)

Publication Number Publication Date
WO2013081853A2 WO2013081853A2 (en) 2013-06-06
WO2013081853A3 true WO2013081853A3 (en) 2015-06-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/065497 WO2013081853A2 (en) 2011-11-29 2012-11-16 Doping carbon nanotubes and graphene for improving electronic mobility

Country Status (3)

Country Link
US (2) US8772910B2 (en)
CN (1) CN103946964B (en)
WO (1) WO2013081853A2 (en)

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US10020300B2 (en) 2014-12-18 2018-07-10 Agilome, Inc. Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
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US9857328B2 (en) 2014-12-18 2018-01-02 Agilome, Inc. Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
CN104495779A (en) * 2014-12-26 2015-04-08 江南大学 Simple and efficient method for preparing three-dimensional carbon nanotubes/graphene hybrid material
US9577204B1 (en) * 2015-10-30 2017-02-21 International Business Machines Corporation Carbon nanotube field-effect transistor with sidewall-protected metal contacts
EP3459115A4 (en) 2016-05-16 2020-04-08 Agilome, Inc. Graphene fet devices, systems, and methods of using the same for sequencing nucleic acids
US11222959B1 (en) * 2016-05-20 2022-01-11 Hrl Laboratories, Llc Metal oxide semiconductor field effect transistor and method of manufacturing same
CN107993981B (en) * 2017-11-22 2020-11-06 深圳市华星光电半导体显示技术有限公司 TFT substrate and method for manufacturing the same
SE541515C2 (en) 2017-12-22 2019-10-22 Graphensic Ab Assembling of molecules on a 2D material and an electronic device
US11626486B2 (en) 2018-01-29 2023-04-11 Massachusetts Institute Of Technology Back-gate field-effect transistors and methods for making the same
WO2019236974A1 (en) 2018-06-08 2019-12-12 Massachusetts Institute Of Technology Systems, devices, and methods for gas sensing
CN113544688B (en) 2018-09-10 2022-08-26 麻省理工学院 System and method for designing integrated circuits
CN112840448A (en) 2018-09-24 2021-05-25 麻省理工学院 Tunable doping of carbon nanotubes by engineered atomic layer deposition
WO2020113205A1 (en) 2018-11-30 2020-06-04 Massachusetts Institute Of Technology Rinse - removal of incubated nanotubes through selective exfoliation
CN110137356B (en) * 2019-06-05 2021-12-24 京东方科技集团股份有限公司 Thin film transistor, manufacturing method thereof and electronic device
CN112986355A (en) * 2019-12-12 2021-06-18 福建海峡石墨烯产业技术研究院有限公司 Graphene field effect transistor biosensor with double-gate structure and preparation method thereof

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Also Published As

Publication number Publication date
US8772910B2 (en) 2014-07-08
WO2013081853A2 (en) 2013-06-06
US8772141B2 (en) 2014-07-08
US20130134392A1 (en) 2013-05-30
US20130137248A1 (en) 2013-05-30
CN103946964B (en) 2017-04-05
CN103946964A (en) 2014-07-23

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