WO2012152719A1

WO2012152719A1 - Semiconductor device and method for producing a semiconductor device

Info

Publication number: WO2012152719A1
Application number: PCT/EP2012/058299
Authority: WO
Inventors: Jürgen Moosburger; Hans-Jürgen LUGAUER
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2011-05-06
Filing date: 2012-05-04
Publication date: 2012-11-15
Also published as: DE102011100743A1

Abstract

A semiconductor device (1) is provided, comprising a plurality of emission regions (10), at least one of which has a semiconductor body (2) with an active region (20), provided for generating radiation, and comprising a support (3), which has a mounting area (34). The semiconductor body (2) is arranged on a side of the support (3) that is facing away from the mounting area (34) and between the active region (20) and the mounting area (34) there is formed a deflecting device (6), which is intended for deflecting the active region (20) in relation to the mounting area (34). A method for producing a semiconductor device is also provided.

Description

description

Semiconductor device and a method for producing a semiconductor device

The present application relates to a semiconductor device and a method for producing a

Semiconductor device. In light sources based on light-emitting diodes (LEDs), the radiation characteristic is usually by the

Design of the semiconductor chips of the LEDs optionally in conjunction with a primary optics associated with the LEDs specified. For applications in which the

Radiation characteristic is to be varied, for example, for an adaptive headlight system (Adaptive

Frontlighting System, AFS), this can be achieved by a mechanical adjustment of a secondary optics and / or by switching on and off of individual semiconductor chips. However, this is comparatively complicated and costly.

An object is to specify a semiconductor component in which a spatial radiation characteristic can be varied in a simple manner during operation. Furthermore, a method is to be specified with which such a semiconductor device can be produced inexpensively and reliably.

This object is achieved by a semiconductor device

or a method with the features of

independent claims solved. Embodiments and developments are the subject of the dependent

Claims. A semiconductor device according to one embodiment has a plurality of emission regions which are preferably spaced apart in a lateral direction and

furthermore preferably arranged next to one another.

At least one emission region has a semiconductor body with an active region provided for generating radiation. The semiconductor component has a carrier with a mounting surface, wherein the semiconductor body is arranged on a side of the carrier facing away from the mounting surface, and a deflection device is formed between the active region and the mounting surface. The

Deflection device is provided to deflect the active region during operation of the semiconductor device relative to the mounting surface, in particular to tilt.

By means of the integrated into the semiconductor device, in particular in the carrier as part of the semiconductor device

Deflection device is a spatial

Abstrahlcharakteristik the semiconductor device in its operation variable. On a mechanical adjustability of the semiconductor device downstream in a radiation secondary optics for varying the

Radiation characteristic can be dispensed with. Preferably, a plurality of the emission regions, more preferably each of the emission regions, has one

Semiconductor body having an active region for generating radiation and one of the respective

Semiconductor body associated with deflection device.

By means of the deflection device is a preferably perpendicular to a main extension plane of the active Area extending main emission axis of the respective emission region relative to the mounting plane deflectable.

Further preferably, a plurality of the semiconductor bodies, particularly preferably all the semiconductor bodies, are arranged on a common carrier. The semiconductor bodies furthermore preferably proceed from a common, in particular epitaxial, semiconductor layer sequence with the active region.

In a preferred embodiment, the

Deflection device formed by means of a columnar portion of the carrier. The columnar region has at least one laterally extending direction, preferably along two laterally and mutually perpendicular directions, a smaller extent than the active region.

Preferably, an extension of the columnar area is along a lateral direction between

including 10% and including 90%, more preferably between 10% and 60% inclusive, of the expansion of the semiconductor body along that direction. The larger the cross section of the columnar

Area in view of the semiconductor device is, the lower the thermal resistance for heat generated in operation in the active areas. At the same time, however, the reversible bendability increases with increasing

lateral expansion.

The carrier preferably has a base region. The base region preferably extends continuously in a lateral direction over the semiconductor body in a lateral direction. On the side facing away from the base area of the

column-shaped region, the carrier preferably has a deflection region, on which the respective semiconductor body is arranged and preferably fixed. Of the

The deflection region preferably projects beyond the columnar region at least along one direction, particularly preferably on all sides.

Further preferably, the carrier has a carrier body, which is preferably formed in one piece. In particular, the carrier body, the base area, the columnar

Form area and the deflection area. The carrier body can furthermore be used for at least two emission regions,

form in particular for all emission regions, the base region, the respective columnar region and preferably also the respective deflection region.

In a preferred embodiment, the carrier, in particular the carrier body, contains a semiconductor material.

In particular, the carrier body of a

Consist of semiconductor material. Silicon is particularly suitable because of its good microstructibility, its

large-scale and cost-effective availability and its high thermal conductivity. Deviating from this, however, it is also possible to use another semiconductor material, for example gallium arsenide or germanium.

Further preferred is the columnar region between the base region of the carrier and the active region

arranged. The columnar region is preferably arranged centrally to the associated semiconductor body. That is, in plan view of the semiconductor device is a

Center of gravity of the semiconductor body within the columnar area. Preferably, a center of gravity of the columnar region and a center of gravity of the

associated semiconductor body to each other or im

Substantially, for example, with a deviation of at most 10% of the maximum lateral extent of the semiconductor body.

In a preferred embodiment, the

Deflection device on a semiconductor body

facing side of the base region, an electrode assembly and a disposed between the electrode assembly and the active region, in particular on the deflection region of the carrier, arranged counter electrode arrangement. Preferably, the electrode assembly and the

Counter electrode arrangement in each case one pair of electrodes, wherein the electrodes of the pair of electrodes respectively

are arranged opposite sides of the columnar region.

By applying an electrical voltage between the

Electrode assembly and the counter electrode assembly is the associated active area relative to the mounting surface

deflectable, in particular tiltable. A deflection angle relative to the mounting plane is preferably continuously adjustable via the applied voltage. In terms of the mounting surface, a deflection angle is preferably between 0 ° and 45 °, inclusive.

For a deflection of the semiconductor body in two obliquely or vertically extending directions, the Deflection device have a further electrode arrangement and a further counter electrode arrangement.

In a preferred embodiment, the carrier has a via, with which the active region can be electrically contacted by the mounting surface. A

front side, so the radiation side, electrical

Contacting the semiconductor body is thus not

required. In a further preferred embodiment of the

Semiconductor body cohesively connected to the carrier. In a cohesive connection, the, preferably prefabricated, connection partners are held together by means of atomic and / or molecular forces. A cohesive connection can for example by means of a

Connecting layer, such as an adhesive layer or a

Lotschicht, be achieved.

The carrier serves for the mechanical stabilization of the

The semiconductor body. A growth substrate for the

Semiconductor layer sequence of the semiconductor body is no longer necessary for this and can thus be removed.

Alternatively, it is also conceivable that the growth substrate itself forms the carrier.

In a further preferred embodiment, the

Semiconductor body on a side facing away from the carrier side a beam-shaping element. The beam-shaping element can be integrated in the semiconductor body or in the form of a particularly prefabricated optical element on the

Semiconductor body be applied. In particular, the beam-shaping element may be a photonic crystal be educated. Directed radiation of the radiation generated in the active region is thus simplified.

In a further preferred embodiment is a

spatial radiation characteristic of the semiconductor device by means of an electrically induced deflection of the at least one active region adjustable, in particular by

Applying an electrical voltage. Mechanical elements are therefore not required for setting the emission characteristic.

A radiation source, which is provided for a spatially variable radiation during operation, is preferred

at least one semiconductor device described above. The radiation source can be designed, in particular, as an adaptive headlight, an intelligent flash, ie a flash whose emission characteristic is adjustable depending on the scene to be illuminated, or as a display device, in particular a 3D display device for displaying a three-dimensional appearing image.

In a preferred embodiment, the active region is between a first remote from the carrier

Semiconductor layer and a second semiconductor layer

arranged. The semiconductor body further preferably has at least one recess which extends through the second semiconductor layer and the active region. The first semiconductor layer is preferably electrically conductively connected to a first connection layer which extends through the recess. Between the carrier and the second semiconductor layer, a second connection layer is preferably arranged, with which the second

Semiconductor layer is electrically connected. The second connection layer extends in regions between the first connection layer and the carrier. Such a

Semiconductor body can be contacted in a simple manner with two electrical contacts carrier side.

In a method for producing a

Semiconductor device having a plurality of

Emission areas on a support with a

Mounting surface are arranged is in accordance with a

Embodiment, a semiconductor layer sequence with an active region provided for generating radiation on a side facing away from the mounting surface of the carrier

arranged. A plurality of semiconductor bodies is formed from the semiconductor layer sequence. At least one

Deflection device is formed, the one

Assigned to the emission range and is intended to the active range of the emission range relative to

To deflect mounting surface. The carrier is preferably before placing the

Semiconductor layer sequence already prestructured and preferably has contact surfaces, each of the

Semiconductor bodies are assigned. In a preferred embodiment, the

Deflection device after arranging the

Semiconductor layer sequence produced by selectively removing a sacrificial layer of the carrier. During the attachment of the semiconductor layer sequence, the sacrificial layer can therefore serve for mechanical stabilization. Subsequently, by removing the sacrificial layer, a columnar region of the carrier can be formed. In a further preferred embodiment, the

Semiconductor layer sequence on a growth substrate

deposited and the growth substrate, in particular after attachment to the carrier removed.

The method described is particularly suitable for producing a semiconductor component described above. In the context of the semiconductor device executed features can therefore also be used for the process and vice versa.

Further features, embodiments and expediencies will become apparent from the following description of

Embodiments in conjunction with the figures.

The same, similar or equivalent elements are provided in the figures with the same reference numerals.

The figures and the proportions of the elements shown in the figures with each other are not as

to scale. Rather, individual elements for better presentation and / or better

Understanding to be exaggeratedly tall. Show it:

Figure 1A shows an embodiment of a

Semiconductor device in the idle state (Figure 1A) and in a deflected state (Figure 1B), each in a schematic sectional view; 2 shows a second exemplary embodiment of a semiconductor component in a schematic

Cut looks; Figures 3A to 3D, a third embodiment of a

Semiconductor component in a schematic side view for different operating states (Figures 3A to 3C) and in plan view (Figure 3D); FIGS. 4A and 4B show a fourth exemplary embodiment for two different operating states in a schematic side view; and

FIGS. 5A to 5E show an exemplary embodiment of a method for producing a semiconductor component on the basis of intermediate steps shown schematically in a sectional view.

to scale. Rather, individual elements, in particular layer thicknesses, can be exaggerated for better representability and / or better understanding

be shown.

FIGS. 1A and 1B each show an emission region 10 according to a first exemplary embodiment of the invention

Semiconductor device shown. The semiconductor component has a plurality of such emission regions arranged side by side in the lateral direction, which for example can be arranged like a line, a matrix or a honeycomb.

The emission region 10 has a semiconductor body 2 with an active region 20 for generating electromagnetic radiation. The semiconductor body 2 is arranged on a carrier 3 and mechanically stable connected by means of a connecting layer, such as a solder layer or an adhesive layer (not explicitly shown). Of the

Semiconductor body, in particular the active region, preferably contains a III-V compound semiconductor material.

The carrier 3 has an integrally formed

Carrier body 30 with a columnar portion 31, a base portion 32 and a deflection region 33 on. The columnar region is arranged between the base region 32 and the deflection region 33 of the carrier.

On a side facing away from the semiconductor body 2, the carrier 3 has a mounting surface 34, which is provided for fastening the semiconductor component and preferably also for its electrical contacting.

In a lateral direction, ie in a parallel to the

Mounting surface 34 extending direction, the

columnar region 31 has a smaller extent than the semiconductor body 2. The semiconductor body 2 is arranged centrally to the columnar region. Conveniently, the lateral extent of the

columnar portion 31 formed such that the

Carrier 3 has a sufficiently low thermal resistance for the waste heat generated in the semiconductor body 2 during operation and at the same time has sufficiently high flexibility for the stress-induced deflection. Preferably, the extension of the columnar region is between

including 10% and including 90%, more preferably between 10% and 60% inclusive, of the expansion of the semiconductor body along that direction.

In the carrier 3 is still a via 37th

formed over which the semiconductor body 2 of the

Mounting surface 34 is externally electrically contacted. The electrical contacting of the semiconductor body 2 will be explained in more detail in connection with FIG.

On the base region 32, an electrode assembly 35 is formed. The electrode assembly has a first one

Electrode 351 and a second electrode 352 disposed on the opposite side of the first electrode 351 of the columnar portion 31.

The electrode assembly 35 is associated with a counter electrode arrangement 36. The counter electrode arrangement has a first counter electrode 361 and a second counter electrode 362 and is formed on the deflection region 33 of the carrier body 30. In supervision of the emission area 10

overlap the first electrode 351 and the first one

Counter electrode and the second electrode 352 and the second counter electrode. By means of the columnar portion 31, the

Electrode assembly and the counter electrode assembly is a deflection device 6 is formed. By applying an electrical voltage between the electrode assembly 35 and the counter-electrode arrangement 36 can, as in Figure 1B

illustrated, the semiconductor body 2, in particular the active region 20, relative to the mounting surface 34 are deflected by an angle α. As a result of the deflection, a main emission direction perpendicular to a main extension plane of the active region 20 with respect to one of

Mounting surface 34 vertically vertical direction tilted so that the spatial radiation pattern of the semiconductor device by varying the

Main emission directions of the emission regions 10 is adjustable in operation.

A radiation exit surface 201 of the semiconductor body 2 facing away from the carrier 3 has a beam-shaping element 29, which in the exemplary embodiment shown acts as a photonic grating formed in the semiconductor body 2

is executed. By means of the beam-shaping element, a directional radiation of the radiation generated during operation can be conveyed in the direction of the main emission direction. Deviating from the described embodiment, the

Beam shaping element can also be designed as an optical element arranged on the semiconductor body 2, for example as a beam-focusing lens. On the

Beam shaping element can also be dispensed with.

The carrier body 30 is preferably based on a

Semiconductor material or consists of such.

In particular, silicon is suitable. Gallium arsenide or germanium can also be used for the carrier.

The semiconductor body 2 with the active region 20 can also be in two obliquely or perpendicular to each other

Directions be deflected relative to the mounting surface. In particular, the deflection device can have a further electrode arrangement on a side of the base area facing the semiconductor body and a further counter electrode arrangement arranged between the further electrode arrangement and the active area, wherein the

Electrode arrangements and the counter electrode arrangements are arranged such that the semiconductor body is deflectable in two obliquely or mutually perpendicular directions.

Relative to the mounting surface 34 of the semiconductor device 1, the emission regions are preferably tiltable in an angle range between 0 ° and 45 °. A second exemplary embodiment of a semiconductor component 1 is shown schematically in a sectional view in FIG. 2, wherein once again only one emission region 10 is shown.

Already described in connection with the first embodiment elements may be similar, unless explicitly described deviating.

The semiconductor body 2 has an active region 20 which is disposed between a first side facing away from the carrier 3

Semiconductor layer 21 and a carrier 3 facing the second semiconductor layer 22 is arranged.

The semiconductor body 2 has recesses 25 extending from the carrier 3 through the second semiconductor layer 22 and the active region 20 into the first

Semiconductor layer 21 extend into it.

Between the semiconductor body 2 and the carrier 3, a first connection layer 23 is arranged, which extends through the Recess 25 extends therethrough and is electrically conductively connected to the first semiconductor layer 21.

Furthermore, a second connection layer 24 is arranged between the carrier 3 and the semiconductor body 2 and is electrically conductively connected to the second semiconductor layer 22. The second connection layer 24 extends in regions

between the semiconductor body 2 and the first

Connection layer 23. The second connection layer 24 directly adjoins the second semiconductor layer 22 and is preferably designed to be mirror-like for the radiation generated in the active region 20. For example, the second

Terminal layer 24 or a partial layer thereof silver,

Contain aluminum or palladium or consist of such a material.

Between the first connection layer 23 and the second

Terminal layer 24, an insulating layer 26 is arranged to avoid an electrical short circuit. The semiconductor body 2 is connected to the carrier 3 by means of a connecting layer 27, for example a solder or an electrically conductive adhesive layer, in a materially bonded manner. The carrier 3 serves for the mechanical stabilization of the

Semiconductor Body 2. A growth substrate for the

epitaxial semiconductor body 2 is no longer necessary and therefore removed.

The carrier has two plated-through holes 37, which extend in a vertical direction through the carrier body 30. By means of the connection layer 27, the first connection layer 23 is electrically conductively connected to a first contact layer 41 and the second connection layer 24 is electrically conductively connected via a partial layer 241 to a second contact layer 42. By applying an external electrical voltage between the first contact layer 41 and the second contact layer 42, charge carriers from different sides can be injected into the active region 20 by applying an external electrical voltage from the mounting surface 34 and recombine there with the emission of radiation. On the of

Carrier 3 side facing away from the semiconductor body 2 so no external electrical contacts are required, which complicate the deflection of the semiconductor body and would reduce the usable area for the radiation emission.

The base region 32 is preferably formed in one piece for all emission regions 10 of the semiconductor component 1. The contact layers 41, 42 are by means of another

Insulation layer 39 electrically isolated from the carrier body 30.

For the insulating layers 26, 39, for example, an oxide, such as silicon oxide, a nitride, such as silicon nitride, or an oxynitride, such as silicon oxynitride is suitable.

Of course, from the described

Embodiment deviating also other

Contacting geometries with which the first

Semiconductor layer 21 and the second semiconductor layer 22 from the radiation exit surface 201 facing away from electrically contactable, find application.

A first exemplary embodiment of a radiation source 100 is shown with reference to FIGS. 3A to 3D, wherein the

Radiation source as a display device for the

Representation of three-dimensional appearing images (3D display) is formed. The radiation source has a semiconductor component 1, which is preferably designed as described in connection with FIGS. 1A, 1B and 2. To the simplified

Representation is for each emission region 10 only simplifies the semiconductor body and the columnar

Area shown, wherein for each emission area in each case an arrow, the associated main emission of the active

Area illustrated. The semiconductor component is arranged on a connection carrier 5. Via control points 51, the individual emission regions can be controlled independently of each other, so that both the radiation power and the main emission direction by means of the

Deflection device for the emission ranges is individually adjustable.

As shown in Figure 3D, the individual ones are

Emission regions 10 honeycomb-shaped and arranged side by side in the lateral direction. Deviating from this, however, another, in particular polygonal, for example rectangular or square, form can be used for the emission ranges.

Preferably, the deflection device is such

designed such that the axes of movement about which the deflection takes place, are arranged radially symmetrically, so that a radially symmetrical deflection of the semiconductor body of the

Emission areas 10 takes place.

As shown in Figure 3A, run the

Main emission directions of the individual emission regions 10 in the rest position of the deflection device parallel to each other and perpendicular to the mounting surface of the semiconductor device. By a deflection of the semiconductor body of the outer

Emission regions can be carried out during operation of the display device, an adaptive and dynamic adjustment of the focus point. This is in Figures 3B, in which the outer

Emissive regions are deflected towards the center of the display device, and in the figure 3C, in which a

Deflection is made away from the center of the display device, shown schematically. In the radiation direction of the display device can be a

Subsequent secondary optics (not explicitly shown).

A second exemplary embodiment of a radiation source is shown schematically in FIGS. 4A and 4B. This second exemplary embodiment is suitable, for example, as an intelligent flash or as an adaptive headlight, wherein in turn a secondary optic may be arranged downstream of the semiconductor component 1 in the emission direction (not explicitly shown).

As described in connection with FIGS. 3A to 3C, by applying an electrical voltage to the

Displacement devices of the emission ranges 10 the

Spatial radiation characteristics are set, for example, for a flash so in operation, that the total generated radiation power of the semiconductor device in comparison to a uniform radiation amplified in the direction of an object to be illuminated 7 in front of a

Background 71 takes place, so that the total incident on the object 7 radiation power is increased at the same generated radiation power of the semiconductor device. In a headlight can by means of

Deflection devices the spatial radiation of the

Headlamps are suitably varied, for example, when driving through curves and / or to regulate the lighting range.

With the integrated into the semiconductor device

Deflection device can during operation an adjustment of the radiation characteristic without a mechanical movement

subordinate elements, for example, without downstream mechanically movable secondary optics done. Of the

Mechanical structure of the radiation sources is characterized

simplified. Furthermore, the radiation sources can be made more compact.

An exemplary embodiment of a method for producing a semiconductor component is shown schematically in FIGS. 5A to 5E. A semiconductor layer 200 having an active region 20 for generating radiation is epitaxially deposited on a growth substrate 28, for example a silicon substrate or a sapphire substrate, for example by means of MOCVD or MBE (FIG. 5A). The process has been improved

only for the production of a single

Emission range 10 shown in which from the

Semiconductor layer sequence 200, a semiconductor body 2

emerges.

The semiconductor layer sequence 200 is combined with that of the

Wax substrate 28 side facing away fixed to a support 3 with a support body 30, preferably on at least one arranged on the support contact layer (not explicitly shown). As a carrier, for example, a silicon substrate is suitable.

In the production of a composite with the growth substrate 28 and the carrier 3 shown in FIG. 5B, the carrier has a sacrificial layer 38 which mechanically seals the carrier

stabilized. For example, a dielectric layer is suitable as a sacrificial layer, such as silicon oxide or

Silicon nitride. The carrier preferably already has plated-through holes 37 during production of the composite.

After the mechanically stable connection with the carrier 3, the growth substrate 28 is removed (FIG. 5C). This can be done mechanically, for example by means of grinding, lapping or polishing, chemically, for example by wet-chemical or dry-chemical etching, or by means of coherent radiation, for example

Laser radiation, done. Deviating from that

Growth substrate can also be removed before the composite is made.

As shown in FIG. 5D, after the removal of the growth substrate 28, the sacrificial layer for forming the columnar regions 31 may be removed. This is done for example by wet chemical etching. The risk of mechanical damage to the carrier 3, in particular the comparatively thin columnar regions 31, during the removal of the growth substrate can be reduced as much as possible. Subsequently, on a base portion 32 of the support body 30, an electrode assembly 35 and on a the

Base region 32 opposite deflection region 33 one of the electrode assembly opposite Counter electrode arrangement 36 formed, for example by means of vapor deposition or sputtering. The completed semiconductor device is shown in FIG. 5E. This patent application claims the priority of German Patent Application 10 2011 100 743.5, the disclosure of which is hereby incorporated by reference.

The invention is not limited by the description with reference to the embodiments. Rather, the includes

Invention every new feature as well as every combination of

Features, which includes in particular any combination of features in the claims, even if this feature or this combination itself is not explicitly in the

Claims or the embodiments is given.

Claims

claims

1. semiconductor device (1) having a plurality of

Emission areas (10), in which at least one

Emission region comprises a semiconductor body (2) with an active region provided for generating radiation (20), and with a carrier (3) having a mounting surface (34), wherein the semiconductor body is disposed on a side facing away from the mounting surface of the carrier and a deflection device (6), which is provided for deflecting the active region relative to the mounting surface during operation of the semiconductor component, is formed between the active region and the mounting surface.

2. Semiconductor component according to claim 1,

wherein the deflection device is formed by means of a columnar region (31) of the carrier, wherein the

columnar region between a base region (32) of the carrier and the active region is arranged and along at least one direction has a smaller lateral extent than the active region.

3. Semiconductor component according to claim 2,

wherein the carrier has an integrally formed carrier body (30) which forms the columnar region and the base region for at least two emission regions.

4. A semiconductor device according to claim 2 or 3,

wherein the deflection means on a the

Semiconductor body facing side of the base region, an electrode assembly (35) and one between the Electrode arrangement and the active region arranged counter electrode arrangement (36).

5. Semiconductor component according to one of the preceding

Claims,

wherein the carrier has a via (37), with which the active region is electrically contacted by the mounting surface.

6. Semiconductor component according to one of the preceding

Claims,

wherein the carrier comprises a semiconductor material.

7. Semiconductor component according to one of the preceding

Claims,

wherein the semiconductor body is materially connected to the carrier and a growth substrate (28) for the

Semiconductor body is removed.

8. Semiconductor component according to one of the preceding

Claims,

wherein the semiconductor body has a beam-shaping element (29) on a side facing away from the carrier.

9. Semiconductor component according to one of the preceding

Claims,

being a spatial emission characteristic of the

Semiconductor device is adjustable by means of an electrically induced deflection of the at least one active region.

10. Semiconductor component according to one of the preceding claims, in which

- The active region between a carrier facing away from the first semiconductor layer (21) and a second

Semiconductor layer (22) is arranged;

- The semiconductor body at least one recess (25)

which extends through the second semiconductor layer and the active region;

- The first semiconductor layer with a first

Terminal layer (23) is electrically connected, which extends through the recess therethrough;

- Between the carrier and the second semiconductor layer, a second connection layer (32) is arranged, with which the second semiconductor layer is electrically connected; and

- The second connection layer extends in regions between the first connection layer and the carrier.

11. Radiation source with a semiconductor component according to one of the preceding claims,

wherein the radiation source as an adaptive headlight, an adaptive flash or a 3D display device

is trained.

12. A method for producing a semiconductor device (1) having a plurality of emission regions (10) on a

Carrier (3) are arranged with a mounting surface (34), with the steps:

a) arranging a semiconductor layer sequence (200) with an active region (20) provided for generating radiation on a side of the mounting surface (34) facing away from

Carrier;

b) forming a plurality of semiconductor bodies (2) from the semiconductor layer sequence; and c) forming at least one deflection device (6), which is assigned to an emission region and provided for deflecting the active region of the emission region relative to the mounting surface.

13. The method according to claim 12,

in which the deflection device is produced after arranging the semiconductor layer sequence by means of selective removal of a sacrificial layer (38) of the carrier.

14. The method according to claim 12 or 13,

wherein the semiconductor layer sequence on a

Growth substrate (28) is deposited and the

Growth substrate is removed after attachment to the carrier.

15. The method according to any one of claims 12 to 14,

wherein a semiconductor device according to any one of claims 1 to 10 is produced.