WO2012134070A2

WO2012134070A2 - Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus

Info

Publication number: WO2012134070A2
Application number: PCT/KR2012/001659
Authority: WO
Inventors: 전형탁; 박태용; 이재상; 최동진; 전희영; 박진규
Original assignee: 한양대학교 산학협력단
Priority date: 2011-03-31
Filing date: 2012-03-07
Publication date: 2012-10-04
Also published as: CN103649368B; KR20120111108A; KR101311983B1; CN103649368A; WO2012134070A3

Abstract

The present invention relates to a gas-injection apparatus, to an atomic layer deposition apparatus, and to an atomic layer deposition method using the apparatus. The gas-injection apparatus is configured in the shape of a single pipe. Gas is supplied onto a substrate through the central portion of the gas-injection apparatus, and simultaneously, gas supplied through gas-intake holes formed in specific portions along an outer surface of a gas supply pipe is suctioned. Thus, when the gas-injection apparatus is disposed near the substrate, the supply and suction of the gas may be performed at the same time. Here, since a deposition process is performed at a normal pressure, it is unnecessary to provide an additional apparatus and set aside time to produce a vacuum state. Also, since consecutive processes are able to be carried out, pre- or post-processes may be performed together at the same time. In addition, a plurality of source injection apparatuses may be provided to form a multi-component compound. In this case, the type of heat source and supplied heat energy may be individually adapted for each source decomposition temperature.

Description

Gas injection apparatus, atomic layer deposition apparatus and atomic layer deposition method using the apparatus

The present invention relates to an atomic layer deposition apparatus, and more particularly, to provide a gas injection apparatus capable of depositing an atomic layer at atmospheric pressure, an atomic layer deposition apparatus including the same, and an atomic layer deposition method using the apparatus.

In general, a semiconductor device, a flat panel display device, and the like go through various manufacturing processes, and among them, a process of depositing a thin film required on a substrate such as a wafer or glass is inevitably performed. In such a thin film deposition process, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD) and the like are mainly used.

Among them, atomic layer deposition method is a nanoscale thin film deposition technique using chemical adsorption and desorption of monoatomic layer. Each reactant is separated and supplied to the chamber in the form of a pulse to the surface of the reactant on the substrate surface. It is a new concept of thin film deposition technology using chemical adsorption and desorption by surface saturation reaction.

Since the conventional atomic layer deposition technique requires a vacuum during the deposition process, an additional apparatus for maintaining and managing the same is required, and the process time is long, resulting in a decrease in productivity. In addition, the limited space to secure a vacuum has a problem that is not suitable for the display industry seeking a large area and enlargement.

SUMMARY OF THE INVENTION An object of the present invention for solving the above problems is to provide a gas injection apparatus, an atomic layer deposition apparatus including the same, and an atomic layer deposition method using the apparatus to deposit an atomic layer at atmospheric pressure.

The present invention for achieving the above object has a first outer circumferential surface surrounding the hole through which gas is supplied, has a guide extending from an area in which a part of the first outer circumferential surface is opened, and the space formed by the guide is a gas outlet. Gas supply pipe used; And a gas suction pipe connected to the guide and having a second outer circumferential surface surrounding the outer circumference of the first outer circumferential surface, and having a gas inlet of which a part of the second outer circumferential surface is opened.

In addition, the present invention for achieving the above object, includes at least two gas injectors that can perform the supply and suction of gas at the same time, the gas injection unit, the first outer peripheral surface and the inducing supply of the gas and the A gas supply pipe having a guide defining a gas outlet for discharging gas to the substrate, and a gas inlet connected to the guide and having a second outer circumferential surface surrounding the periphery of the first outer circumferential surface, wherein a part of the second outer circumferential surface is open; Provided is an atomic layer deposition apparatus comprising a gas suction tube.

In addition, the present invention for achieving the above object, the step of supplying the source gas to the substrate through the first gas injection, and sucking; Supplying and sucking a purge gas to the substrate through a second gas injection unit having a first separation distance from the first gas injection unit; And supplying and sucking the reaction gas to the substrate through a third gas injection part having a second separation distance from the second gas injection part.

As described above, according to the present invention, since the deposition is performed at atmospheric pressure, a device and time for securing a separate vacuum are not required. Therefore, the productivity increase effect can be expected and can be applied to the display field because it is easy to enlarge.

As a method of heating the surface of the substrate, various heat sources such as halogen lamps and lasers can be used. In this case, the heat is only temporarily heated instead of the entire substrate. Thermal diffusion, reduced lifespan, and physical deformation can be prevented. In addition, the deposition rate may be increased by using an atmospheric pressure plasma, a UV lamp, and a laser, and a metal thin film and a nitride film may also be deposited.

In addition, the continuous process can be performed, the pre- and post-treatment can be carried out together in a batch, and multiple source injection apparatuses can be installed to form a multi-component compound. In this case, there is an advantage that the type of heat source and the supplied thermal energy can be individually corresponded to the decomposition temperature of each source. If the gas injection device is installed alternately up and down, double-sided deposition may be possible. In the configuration of the gas injection device, there is a gas inlet in the longitudinal direction of the gas supply pipe, and an inlet is provided on the side of the gas inlet so that the amount of surrounding gas is discharged in proportion to the amount injected so that the deposition efficiency can be increased. The amount of can be adjusted via the gas valve tube.

However, the effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

1 is a perspective view showing a gas injection device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along line II ′ of the gas injection device of FIG. 1.

3 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

4 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

5 is a graph of temperature versus position of a substrate surface when a part of the substrate surface is heated by using a halogen lamp on the substrate.

6 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

7 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

8 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

9 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the drawings, similar reference numerals are used for similar elements.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Hereinafter, with reference to the accompanying drawings, it will be described in detail a preferred embodiment of the present invention.

In addition, the term "normal pressure" used in the present invention is a pressure when the pressure is not particularly reduced or increased, usually means a pressure of about 1 atmosphere, such as atmospheric pressure.

Example

1 is a perspective view showing a gas injection device 100 according to an embodiment of the present invention.

Referring to FIG. 1, the guide has a first outer circumferential surface 111 that surrounds the hole 110 to which gas is supplied, and a guide 112 that extends from an area in which a portion of the first outer circumferential surface 111 is opened. And a second outer circumferential surface 120 connected to the gas supply pipe using the space formed by the 112 as the gas outlet 113 and the guide 112, and surrounding the outer circumference of the first outer circumferential surface 111. 2 provides a gas injection device 100 including a gas suction pipe having a gas suction port 121 in which a part of the outer circumferential surface 120 is opened.

An angle between the gas inlet 121 and the gas outlet 113 and the center of the gas injection device 100 may be 5 ° to 90 °. When the angle between the gas inlet 121 and the gas outlet 113 and the center of the gas injector 100 is less than 5 °, gas may be supplied to the substrate by the gas outlet 113 of the gas injector 100. Before the supply, the gas may be absorbed into the gas inlet 121 so that the gas supply efficiency for the gas deposited on the substrate is lower than that of the supplied gas. In addition, when the angle between the gas inlet 121 and the gas outlet 113 and the center of the gas injection device 100 is greater than 90 °, the gas inlet for sucking the surrounding gas on the substrate by the gas inlet 121 The efficiency is low.

The gas inlet 121 may be disposed at symmetrical positions with respect to the gas outlet 113. The gas inlet 121 is disposed on both sides of the gas outlet 113 to suck the gas remaining on the substrate in the previous step, and then injects the gas of the present step onto the substrate through the gas outlet 113 and again. Since the gas remaining after the reaction on the substrate may be sucked, the gas inlet 121 may be disposed at positions symmetrical with respect to the gas outlet 113. However, the present invention is not limited thereto, and the gas inlet 121 may be disposed at one side of the gas outlet 113.

The gas injection device 100 does not need a vacuum state because the gas supply and suction are performed at the same time, it can be carried out at normal pressure.

The gas injection device 100 further includes a gas valve tube 130 mounted in the gas supply pipe to adjust a gas flow rate. The gas valve pipe 130 is rotatably mounted about a central axis of the gas supply pipe. The gas valve tube 130 may include a hole 131 formed in the longitudinal direction of the gas valve tube 130.

The hole 131 of the gas valve tube 130 may be integrally formed in the longitudinal direction of the gas valve tube 130 or may be provided in a shape having a predetermined separation distance in the longitudinal direction of the gas valve tube 130. Therefore, it is necessary to adjust the gas injection method according to the reaction process, the gas can be adjusted by the pre-injection or point injection method according to the shape of the hole 131 of the gas valve tube 130.

In addition, the gas outlet 113 may be disposed along the longitudinal direction of the gas suction pipe to provide gas in a pre-injection or point injection manner, and may be manufactured in the form of a hole having a predetermined distance or in the form of an integrated slit. .

Referring to Figure 2, according to the operation of the gas valve tube 130 (a) is a gas supply is blocked state and (b) is a gas supply is open state. For example, if you want to complete the deposition process, the gas supply must be shut off. Therefore, the gas valve tube 130 shields the gas supply tube. This shuts off the gas supply.

Furthermore, since a part of the gas outlet 113 can be shielded according to the operation mode of the gas valve tube, the flow rate of the gas can also be adjusted.

Referring to FIG. 3, the substrate 200 is positioned on the heater 210 and the first gas injection unit 140, the first gas injection unit 140, and the first separation distance e are located on the substrate 200. It is possible to provide an atomic layer deposition apparatus in which a second gas injection unit 150 having a) and a third gas injection unit 160 having a second separation distance f from the second gas injection unit 150 are disposed. have. The first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step.

The substrate 200 moves from the right side to the left side in the direction of the arrow, and the first gas injector 140 to the third gas injector 160 are fixed, and supply / suction the source gas and the purge. Supply / suction of gas and supply / suction of the reaction gas may be performed simultaneously.

Alternatively, while the substrate 200 is fixed, the first gas injection unit 140 to the third gas injection unit 160 move, supply / suction of the source gas, and supply / suction of the purge gas. And supply / suction of the reaction gas may be performed at the same time. In addition, the first gas injection unit 140 to the third gas injection unit 160 and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate. When the substrate and the gas injection unit move at the same time, the shortening effect of the distance can be expected.

However, the present invention is not limited thereto.

The source gas is supplied from the first gas injection unit 140 onto the substrate 200, and the purge gas is injected from the second gas injection unit 150 onto the substrate 200. Thereafter, a reaction gas is injected from the third gas injection unit 160 onto the substrate 200 to deposit an atomic layer.

For example, in order to deposit a silicon thin film, the source gas may be a gas of any one of silane (Silane, SiH ₄ ), disilane (Disilane, Si ₂ H ₆ ), and silicon tetrafluoride (SiF ₄ ) including silicon. In addition, the reaction gas may be oxygen (O ₂ ) or ozone (O ₃ ) gas. The purge gas may use any one of argon (Ar), nitrogen (N ₂ ), and helium (He), or a mixture of two or more. However, the present invention is not limited thereto, and the number and type of the source gas, the purge gas, or the reactant gas may vary substantially.

In this case, the distance c between the gas injection parts and the substrate 200 is preferably within several mm. More preferably, the distance c between the gas injection parts and the substrate 200 is 0.1 mm to 5 mm. If the distance between the gas injection parts and the substrate 200 is less than 0.1 mm, the gas injection parts may directly contact the substrate. In addition, when the distance exceeds 5mm, there is a problem that the supply of the source gas and the like is not made smoothly.

Referring to FIG. 4, a substrate 200 is positioned on a cooling pad 220 and a halogen lamp 230 is disposed on the substrate 200. Next, a first gas injection unit 140, a second gas injection unit 150 having a first separation distance e from the first gas injection unit 140, and the second gas are disposed on the substrate 200. The third gas injection unit 160 having the injection unit 150 and the second separation distance f may be disposed. The first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step.

The substrate 200 moves from right to left in the direction of the arrow. However, the present invention is not limited thereto, and the substrate 200 may be fixed and the gas injection unit may move. In addition, the gas injection unit and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate. When the substrate and the gas injection unit move at the same time, the shortening effect of the distance can be expected.

In this case, the distance c between the gas injection parts and the substrate 200 is preferably within several mm. More preferably, the distance c between the gas injection parts and the substrate 200 is 0.1 mm to 5 mm.

Before the supply and intake of the source gas, the surface of the substrate 200 is heated using the halogen lamp 230 and the bottom surface of the substrate 200 is continuously cooled by the cooling pad 220. This prevents the temperature of the entire substrate 200 from rising due to the surface heating by the halogen lamp 230. Therefore, the heating of the substrate 200 may be performed on a specific portion of the substrate 200 where the supply and suction of the source gas is performed.

Subsequently, a source gas is supplied from the first gas injection unit 140 to a specific portion of the heated substrate 200, and a purge gas is injected from the second gas injection unit 150 onto the substrate 200. Thereafter, a reaction gas is injected from the third gas injection unit 160 onto the substrate 200 to deposit an atomic layer.

Supply / suction of a source gas, supply / suction of the purge gas, and supply / suction of the reaction gas may be performed at normal pressure on the substrate. This is because there is no need for vacuum because the gas supply / suction process is performed at the same time.

Since the cooling unit 231 of the halogen lamp 230 prevents heating of a portion outside the surface of the substrate 200, the cooling portion 231 may prevent the temperature of the entire substrate 200 from rising.

5 illustrates a case in which the cooling pad 220 is installed on the bottom surface of the substrate 200 and the halogen lamp 230 is used on the substrate 200 when the halogen lamp 230, which is a heating means, is installed on the substrate 200. Thus, when a part of the surface of the substrate 200 is heated, it is a graph of the temperature versus the position of the surface of the substrate 200. Heating of the substrate 200 is performed only for a specific portion of the substrate 200 where the supply and suction of the source gas is performed.

Due to the method of heating the surface of the substrate, in the case of a multi-component compound using multiple sources, there is an advantage in that a temperature suitable for each source can be selected and used individually.

Referring to FIG. 6, the substrate 200 is positioned on the cooling pad 220, and the heating means 240 is disposed on the substrate 200. The heating means 240 may be a halogen lamp, UV lamp or laser. However, the present invention is not limited thereto, and any device capable of heating the surface of the substrate 200 may be used. Thereafter, a first gas injector 140, a second gas injector 150 having a first separation distance e from the first gas injector 140, and the second gas are disposed on the substrate 200. The third gas injection unit 160 having the injection unit 150 and the second separation distance f may be disposed. The first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step.

The substrate 200 moves from right to left in the direction of the arrow. However, the present invention is not limited thereto, and the substrate 200 may be fixed and the gas injection unit may move. In addition, the gas injection unit and the substrate 200 may move in opposite directions, or the movement in the opposite direction may reciprocate.

Referring to FIG. 7, a substrate 200 is positioned on a cooling pad 220 and a halogen lamp 230 is disposed on the substrate 200. Next, a first gas injection unit 140, a second gas injection unit 150 having a first separation distance e from the first gas injection unit 140, and the second gas are disposed on the substrate 200. The atmospheric pressure plasma generator 170 having the injection unit 150 and the second separation distance f may be disposed. The first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step. Since the atomic layer may be deposited at atmospheric pressure, the atmospheric pressure plasma generator 170 may be used when the reaction gas is injected onto the substrate 200. The atmospheric pressure plasma generating device 170 is a shape of a cold plasma torch.

Referring to FIG. 8, a substrate 200 is positioned on a cooling pad 220 and a halogen lamp 230 is disposed on the substrate 200. Thereafter, a first gas injector 140, a second gas injector 150 having a first separation distance e from the first gas injector 140, and the second gas are disposed on the substrate 200. The third gas injection unit 160 having the injection unit 150 and the second separation distance f may be disposed. The first separation distance e and the second separation distance f may be adjusted in consideration of the time required for each reaction step. The UV lamp 250 may be disposed to react the remaining source gas in the next step of the third gas injection unit 160. However, the present invention is not limited thereto. Since the cooling unit 251 of the UV lamp 250 prevents heating a portion outside the surface of the substrate 200, the cooling unit 251 may prevent the temperature of the entire substrate 200 from rising.

When the UV lamp 250 is used in the deposition process, there is a problem that the efficiency is lowered due to deposition on the surface of the lamp glass during deposition. However, in the case of the present invention, when the UV lamp 250 has a distance from the source, only the source heat-adsorbed on the surface of the substrate 200 is left while undergoing a sufficient suction process at each gas injection part, thereby avoiding lamp contamination. have.

Referring to FIG. 9, an atomic layer deposition apparatus in which a substrate 200 is positioned on a cooling pad 220 and a gas injection unit, an atmospheric pressure plasma generator, and a heating unit are miniaturized into a single integrated module on the substrate 200. Module 300 is disposed. As shown in FIG. 9, the surface of the substrate is heated, and the source gas 303, the purge gas 304, and the plasma gas 302 are sequentially injected and sucked onto the substrate 200. The sucked gas 305 is discharged through a predetermined path. Since the cooling unit 301 of the atomic layer deposition apparatus module 300 prevents heating of a portion outside the surface of the substrate 200, there is an advantage of preventing the temperature of the entire substrate 200 from rising.

In this way, the integrated module may be configured in a configuration according to necessity, and a plurality of these may be arranged to allow atomic cycle deposition of several cycles by one movement of the substrate or module.

In this case, the distance d between the atomic layer deposition apparatus module 300 and the substrate is preferably within several mm. More preferably, the distance d between the atomic layer deposition apparatus module 300 and the substrate is 0.1 mm to 2 mm. If the distance between the gas injection device and the substrate is less than 0.1 mm, the gas injection device may directly contact the substrate. In addition, when the interval exceeds 2mm, a problem may occur that the deposition efficiency of the atomic layer deposition apparatus module 300 is reduced.

[Description of the code]

100: gas injection device 110: hole

111: first outer circumferential surface 112: guide

113: gas outlet 120: second outer peripheral surface

121: gas inlet 130: gas valve tube

131: hole 140: first gas injection unit

150: second gas injection unit 160: third gas injection unit

170: atmospheric plasma generator 200: substrate

210: heater 220: cooling pad

230: halogen lamp 231: cooling unit

240: heating means 250: UV lamp

251: cooling unit 300: atomic layer deposition apparatus module

301: cooling unit 302: plasma gas

303: source gas 304: purge gas

305: inhaled gas

Claims

A gas supply pipe having a first outer circumferential surface surrounding a hole to which gas is supplied, a guide extending from an area where a portion of the first outer circumferential surface is opened, and using a space formed by the guide as a gas outlet; And

And a gas suction pipe connected to the guide and having a second outer circumferential surface surrounding the outer circumference of the first outer circumferential surface, the gas inlet having a portion of the second outer circumferential surface opened.
The method of claim 1,

Further comprising a gas valve tube mounted in the gas supply pipe for adjusting the gas flow rate,

The gas valve tube is rotatably mounted about a central axis of the gas supply pipe, the gas valve tube includes a gas formed in the longitudinal direction of the gas valve tube.
The gas injection device according to claim 2, wherein the hole of the gas valve tube is integrally formed in the longitudinal direction of the gas valve tube or has a predetermined distance in the longitudinal direction of the gas valve tube. .
The gas injection device of claim 1, wherein the gas inlet is disposed at symmetrical positions with respect to the gas outlet.
The gas injection device of claim 1, wherein an angle between the gas inlet port and the gas outlet port and the center of the gas injection device is 5 ° to 90 °.
The gas injection device of claim 1, wherein the gas outlet is disposed along a length direction of the gas suction pipe, and is in the form of a hole having a predetermined distance or in the form of an integrated slit.
The gas injection device according to claim 1, wherein the supply of the gas and the suction of the gas are performed at normal pressure.
At least two gas injection parts capable of simultaneously supplying and sucking gas;

The gas injection unit,

A gas supply pipe having a first outer circumferential surface for inducing supply of the gas and a guide defining a gas outlet for discharging the gas to a substrate; And

And a gas suction pipe connected to the guide and having a second outer circumferential surface surrounding the outer circumference of the first outer circumferential surface, and having a gas inlet opening of a portion of the second outer circumferential surface.
The atomic layer deposition apparatus of claim 8, wherein the gas injection unit has a separation distance of about 0.1 mm to about 5 mm from the substrate.
9. The atomic layer deposition apparatus of claim 8, further comprising heating means for heating the surface of the substrate, wherein the heating means heats the substrate in a previous step in which the gas injection process is performed.
11. An atomic layer deposition apparatus according to claim 10, wherein said heating means is a halogen lamp or a laser.
11. The atomic layer deposition apparatus of claim 10, wherein the heating means is arranged to perform the injection of the gas into the heated portion after heating a specific portion of the substrate.
Supplying and sucking a source gas to the substrate through the first gas injection unit;

Supplying and sucking a purge gas to the substrate through a second gas injection unit having a first separation distance from the first gas injection unit; And

And supplying and reacting a reaction gas to the substrate through a third gas injection part having a second separation distance from the second gas injection part.
The method of claim 13, wherein prior to the supply and suction step of the source gas,

And heating the substrate using a heating means.
15. The method of claim 14, wherein heating of the substrate is performed to a particular portion of the substrate where the supply and suction of the source gas is performed.
The method of claim 13, wherein the supply / suction of the source gas, the supply / suction of the purge gas, and the supply / suction of the reactant gas are performed at normal pressure.
The method of claim 13, wherein the substrate moves and the first gas injector to the third gas injector are fixed, and supply / suction of the source gas, supply / suction of the purge gas, and reaction of the reaction gas. Atomic layer deposition method characterized in that the supply / suction is performed at the same time.
The method of claim 13, wherein the first gas injector to the third gas injector are moved while the substrate is fixed, and the supply / suction of the source gas, the supply / suction of the purge gas, and the reaction gas are performed. Atomic layer deposition method characterized in that the supply / suction is performed at the same time.
The gas supply unit of claim 13, wherein the first gas injection unit to the third gas injection unit and the substrate move in opposite directions or the opposite movement is reciprocated, and supply / suction of the source gas and the purge gas are performed. And supply / suction of the reaction gas and supply / suction of the reaction gas are performed simultaneously.