WO2012123109A3 - Method for producing flexible thin film solar cells - Google Patents

Method for producing flexible thin film solar cells Download PDF

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Publication number
WO2012123109A3
WO2012123109A3 PCT/EP2012/001129 EP2012001129W WO2012123109A3 WO 2012123109 A3 WO2012123109 A3 WO 2012123109A3 EP 2012001129 W EP2012001129 W EP 2012001129W WO 2012123109 A3 WO2012123109 A3 WO 2012123109A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
solar cells
film solar
flexible thin
producing flexible
Prior art date
Application number
PCT/EP2012/001129
Other languages
German (de)
French (fr)
Other versions
WO2012123109A2 (en
Inventor
Kristin PLAT
Steffen Kürbitz
Thomas Rainer
Original Assignee
Boraident Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boraident Gmbh filed Critical Boraident Gmbh
Publication of WO2012123109A2 publication Critical patent/WO2012123109A2/en
Publication of WO2012123109A3 publication Critical patent/WO2012123109A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention relates to a method for producing flexible thin film solar cells, comprising the following steps: e. applying a photoactive layer construction to a rigid substrate preferably made of glass and having the front contact layer thereof facing outward, f. applying a flexible film to the back contact layer of the layer construction facing away from the substrate, g. releasing the photoactive layer construction from the substrate by means of a laser beam, h. applying a flexible film to the front contact layer.
PCT/EP2012/001129 2011-03-15 2012-03-14 Method for producing flexible thin film solar cells WO2012123109A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011014795.0A DE102011014795B4 (en) 2011-03-15 2011-03-15 Process for the production of flexible thin-film solar cells
DE102011014795.0 2011-03-15

Publications (2)

Publication Number Publication Date
WO2012123109A2 WO2012123109A2 (en) 2012-09-20
WO2012123109A3 true WO2012123109A3 (en) 2013-06-20

Family

ID=45954588

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/001129 WO2012123109A2 (en) 2011-03-15 2012-03-14 Method for producing flexible thin film solar cells

Country Status (2)

Country Link
DE (1) DE102011014795B4 (en)
WO (1) WO2012123109A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014202985B4 (en) * 2014-02-19 2018-07-12 4Jet Microtech Gmbh & Co. Kg Production of electronic components on a substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0797258A2 (en) * 1996-03-18 1997-09-24 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
US20030040164A1 (en) * 1997-07-03 2003-02-27 Seiko Epson Corporation Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
US20060076584A1 (en) * 2004-09-07 2006-04-13 Il-Doo Kim Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
US20100255344A1 (en) * 2009-04-06 2010-10-07 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing thin film device and thin film device manufactured using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10006823C2 (en) 2000-02-08 2003-10-02 Cis Solartechnik Gmbh Process for producing a flexible metallic substrate for a CIS solar cell and CIS solar cell
DE10005680B4 (en) 2000-02-07 2005-03-31 Cis Solartechnik Gmbh Support material for a flexible, band-shaped CIS solar cell
DE10127255A1 (en) * 2001-06-05 2003-01-16 Univ Stuttgart Conditioning of glass surfaces for the transfer of CIGS solar cells to flexible plastic substrates
DE10239845C1 (en) 2002-08-29 2003-12-24 Day4 Energy Inc Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module
WO2007011742A2 (en) * 2005-07-14 2007-01-25 Konarka Technologies, Inc. Cigs photovoltaic cells
JP5352824B2 (en) * 2007-07-20 2013-11-27 独立行政法人 宇宙航空研究開発機構 Manufacturing method of solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0797258A2 (en) * 1996-03-18 1997-09-24 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode
US20030040164A1 (en) * 1997-07-03 2003-02-27 Seiko Epson Corporation Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
US20060076584A1 (en) * 2004-09-07 2006-04-13 Il-Doo Kim Fabrication of electronic and photonic systems on flexible substrates by layer transfer method
US20100255344A1 (en) * 2009-04-06 2010-10-07 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing thin film device and thin film device manufactured using the same

Also Published As

Publication number Publication date
DE102011014795B4 (en) 2021-05-06
WO2012123109A2 (en) 2012-09-20
DE102011014795A1 (en) 2012-09-20

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