WO2012071302A3 - Interchangeable pumping rings to control path of process gas flow - Google Patents

Interchangeable pumping rings to control path of process gas flow Download PDF

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Publication number
WO2012071302A3
WO2012071302A3 PCT/US2011/061596 US2011061596W WO2012071302A3 WO 2012071302 A3 WO2012071302 A3 WO 2012071302A3 US 2011061596 W US2011061596 W US 2011061596W WO 2012071302 A3 WO2012071302 A3 WO 2012071302A3
Authority
WO
WIPO (PCT)
Prior art keywords
multiple substrates
gas flow
substrate support
process gas
processing chamber
Prior art date
Application number
PCT/US2011/061596
Other languages
French (fr)
Other versions
WO2012071302A2 (en
Inventor
Tuan Anh Nguyen
David H. Quach
Kuan-Chien Shen
Alain Duboust
Hidehiro Kojiri
Wei-Yung Hsu
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2012071302A2 publication Critical patent/WO2012071302A2/en
Publication of WO2012071302A3 publication Critical patent/WO2012071302A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Apparatus and methods for forming metal nitride films using a processing chamber are provided. The method comprises loading multiple substrates onto a substrate support assembly of the processing chamber, wherein the substrate support is in a loading position during the loading multiple substrates and moving the substrate support from the loading position upwards to a processing position, wherein the multiple substrates are positioned above a first opening for exhausting process gases form the processing chamber, and flowing process gases comprising a metal containing precursor and a nitrogen containing precursor perpendicular to the surfaces of the multiple substrates to form a metal nitride film on the multiple substrates, wherein after contacting the surfaces of the multiple substrates, the process gases flow across the surfaces of the multiple substrates and down toward the first opening.
PCT/US2011/061596 2010-11-22 2011-11-21 Interchangeable pumping rings to control path of process gas flow WO2012071302A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US41604410P 2010-11-22 2010-11-22
US61/416,044 2010-11-22
US201161511820P 2011-07-26 2011-07-26
US61/511,820 2011-07-26
US201161514458P 2011-08-02 2011-08-02
US61/514,458 2011-08-02

Publications (2)

Publication Number Publication Date
WO2012071302A2 WO2012071302A2 (en) 2012-05-31
WO2012071302A3 true WO2012071302A3 (en) 2012-07-19

Family

ID=46146370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/061596 WO2012071302A2 (en) 2010-11-22 2011-11-21 Interchangeable pumping rings to control path of process gas flow

Country Status (1)

Country Link
WO (1) WO2012071302A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012111896A1 (en) * 2012-12-06 2014-06-12 Aixtron Se Chemical vapor deposition reactor has cleaning element that is arranged in annular duct of gas outlet, and movable within annular duct by rotary actuator to mechanically clean interior or exterior wall of annular duct
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US20030000647A1 (en) * 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
KR100573666B1 (en) * 1997-07-22 2006-07-27 가부시키가이샤 에바라 세이사꾸쇼 Thin film deposition apparatus
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
KR100573666B1 (en) * 1997-07-22 2006-07-27 가부시키가이샤 에바라 세이사꾸쇼 Thin film deposition apparatus
US20030000647A1 (en) * 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus

Also Published As

Publication number Publication date
WO2012071302A2 (en) 2012-05-31

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