WO2012040699A3 - High contrast alignment marks through multiple stage imprinting - Google Patents

High contrast alignment marks through multiple stage imprinting Download PDF

Info

Publication number
WO2012040699A3
WO2012040699A3 PCT/US2011/053243 US2011053243W WO2012040699A3 WO 2012040699 A3 WO2012040699 A3 WO 2012040699A3 US 2011053243 W US2011053243 W US 2011053243W WO 2012040699 A3 WO2012040699 A3 WO 2012040699A3
Authority
WO
WIPO (PCT)
Prior art keywords
alignment marks
high contrast
multiple stage
contrast alignment
imprinting
Prior art date
Application number
PCT/US2011/053243
Other languages
French (fr)
Other versions
WO2012040699A2 (en
Inventor
Joseph Michael Imhof
Kosta Selinidis
Dwayne L. Labrake
Original Assignee
Molecular Imprints, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints, Inc. filed Critical Molecular Imprints, Inc.
Priority to KR1020137009972A priority Critical patent/KR101861644B1/en
Priority to EP11827713.6A priority patent/EP2618978B1/en
Priority to JP2013530391A priority patent/JP5852123B2/en
Publication of WO2012040699A2 publication Critical patent/WO2012040699A2/en
Publication of WO2012040699A3 publication Critical patent/WO2012040699A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/30—Mounting, exchanging or centering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Abstract

Two-stage imprinting techniques capable of protecting fine patterned features of an imprint lithography template are herein described. In particular, such techniques may be used during fabrication of recessed high-contrast alignment marks for preventing deposited metal layers from coming into contact with fine features etched into the template.
PCT/US2011/053243 2010-09-24 2011-09-26 High contrast alignment marks through multiple stage imprinting WO2012040699A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020137009972A KR101861644B1 (en) 2010-09-24 2011-09-26 High contrast alignment marks through multiple stage imprinting
EP11827713.6A EP2618978B1 (en) 2010-09-24 2011-09-26 High contrast alignment marks through multiple stage imprinting
JP2013530391A JP5852123B2 (en) 2010-09-24 2011-09-26 High contrast alignment mark by multi-stage imprint

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US38599310P 2010-09-24 2010-09-24
US61/385,993 2010-09-24

Publications (2)

Publication Number Publication Date
WO2012040699A2 WO2012040699A2 (en) 2012-03-29
WO2012040699A3 true WO2012040699A3 (en) 2012-06-21

Family

ID=45869313

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/053243 WO2012040699A2 (en) 2010-09-24 2011-09-26 High contrast alignment marks through multiple stage imprinting

Country Status (6)

Country Link
US (1) US8935981B2 (en)
EP (1) EP2618978B1 (en)
JP (1) JP5852123B2 (en)
KR (1) KR101861644B1 (en)
TW (1) TWI538011B (en)
WO (1) WO2012040699A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6071221B2 (en) * 2012-03-14 2017-02-01 キヤノン株式会社 Imprint apparatus, mold, imprint method, and article manufacturing method
JP2014011254A (en) * 2012-06-28 2014-01-20 Dainippon Printing Co Ltd Alignment mark, template with the mark, and manufacturing method of the template
JP6692311B2 (en) * 2017-03-14 2020-05-13 キオクシア株式会社 template
US11126083B2 (en) * 2018-01-24 2021-09-21 Canon Kabushiki Kaisha Superstrate and a method of using the same
JP2018133591A (en) * 2018-05-18 2018-08-23 大日本印刷株式会社 Manufacturing method of template
JP6607293B2 (en) * 2018-08-28 2019-11-20 大日本印刷株式会社 template

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0180091A2 (en) * 1984-10-30 1986-05-07 International Business Machines Corporation Method of selectively depositing metal layers on a substrate
WO2003003457A2 (en) * 2001-01-24 2003-01-09 Infineon Technologies Ag Design of lithography alignment and overlay measurement marks on damascene surface
US6958280B2 (en) * 2003-06-30 2005-10-25 Hynix Semiconductor Inc. Method for manufacturing alignment mark of semiconductor device using STI process
KR100790899B1 (en) * 2006-12-01 2008-01-03 삼성전자주식회사 Template with alignment mark and manufacturing method for the same

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7309225B2 (en) 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
JP4330168B2 (en) * 2005-09-06 2009-09-16 キヤノン株式会社 Mold, imprint method, and chip manufacturing method
WO2007117524A2 (en) 2006-04-03 2007-10-18 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and alignment marks
US8012395B2 (en) * 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US7837907B2 (en) 2007-07-20 2010-11-23 Molecular Imprints, Inc. Alignment system and method for a substrate in a nano-imprint process
JP2009298041A (en) * 2008-06-13 2009-12-24 Toshiba Corp Template and pattern forming method
US20100092599A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
KR101772993B1 (en) 2010-02-05 2017-08-31 캐논 나노테크놀로지즈 인코퍼레이티드 Templates having high contrast alignment marks

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0180091A2 (en) * 1984-10-30 1986-05-07 International Business Machines Corporation Method of selectively depositing metal layers on a substrate
WO2003003457A2 (en) * 2001-01-24 2003-01-09 Infineon Technologies Ag Design of lithography alignment and overlay measurement marks on damascene surface
US6958280B2 (en) * 2003-06-30 2005-10-25 Hynix Semiconductor Inc. Method for manufacturing alignment mark of semiconductor device using STI process
KR100790899B1 (en) * 2006-12-01 2008-01-03 삼성전자주식회사 Template with alignment mark and manufacturing method for the same

Also Published As

Publication number Publication date
JP5852123B2 (en) 2016-02-03
KR101861644B1 (en) 2018-05-28
KR20130105661A (en) 2013-09-25
TW201220360A (en) 2012-05-16
TWI538011B (en) 2016-06-11
EP2618978A4 (en) 2015-06-03
WO2012040699A2 (en) 2012-03-29
EP2618978A2 (en) 2013-07-31
JP2013543456A (en) 2013-12-05
US8935981B2 (en) 2015-01-20
US20120073462A1 (en) 2012-03-29
EP2618978B1 (en) 2016-11-09

Similar Documents

Publication Publication Date Title
WO2012040699A3 (en) High contrast alignment marks through multiple stage imprinting
WO2010047769A8 (en) Reduction of stress during template separation from substrate
WO2012129210A3 (en) Functional insert with power layer
IL227499A0 (en) Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound
WO2009147602A3 (en) Silicone rubber material for soft lithography
WO2011002518A3 (en) Chucking system with recessed support feature
WO2012058377A3 (en) Methods for etching oxide layers using process gas pulsing
WO2010056500A3 (en) Sub-wavelength metallic apertures as light enhancement devices
WO2007117503A3 (en) Preparing nanoparticles and carbon nanotubes
TWI366068B (en) Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process
WO2012144903A3 (en) Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system
TW200637051A (en) Mask, mask manufacturing method, pattern forming apparatus, and pattern formation method
EP2443440A4 (en) Euv high throughput inspection system for defect detection on patterned euv masks, mask blanks, and wafers
WO2007051994A8 (en) Nanoparticle and nanocomposite films
MX2011007280A (en) Electromagnetic radiation sensor and method of manufacture.
JP2010130013A5 (en)
WO2012080833A3 (en) Controlled release dosage forms
WO2011016849A3 (en) Adjacent field alignment
WO2009152276A3 (en) Photoacid generators and lithographic resists comprising the same
WO2013134592A3 (en) Atomic layer deposition strengthening members and method of manufacture
WO2015103394A3 (en) A metal thin film resistor and process
EP2689292A4 (en) Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks
WO2012061753A3 (en) Nanoimprint lithography formation of functional nanoparticles using dual release layers
EP2761374A4 (en) Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device
WO2010015333A3 (en) High aspect ratio template for lithography, method of making the same template and use of the template for perforating a substrate at nanoscale

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11827713

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2013530391

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20137009972

Country of ref document: KR

Kind code of ref document: A

REEP Request for entry into the european phase

Ref document number: 2011827713

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2011827713

Country of ref document: EP