WO2012023103A3 - Method for producing an improved contact between a silver-containing conductive track and silicon - Google Patents

Method for producing an improved contact between a silver-containing conductive track and silicon Download PDF

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Publication number
WO2012023103A3
WO2012023103A3 PCT/IB2011/053619 IB2011053619W WO2012023103A3 WO 2012023103 A3 WO2012023103 A3 WO 2012023103A3 IB 2011053619 W IB2011053619 W IB 2011053619W WO 2012023103 A3 WO2012023103 A3 WO 2012023103A3
Authority
WO
WIPO (PCT)
Prior art keywords
silver
silicon substrate
silicon
substrate
producing
Prior art date
Application number
PCT/IB2011/053619
Other languages
German (de)
French (fr)
Other versions
WO2012023103A2 (en
Inventor
Uwe Scheit
Lars VÖLKEL
Jochen Schilm
Markus Eberstein
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Publication of WO2012023103A2 publication Critical patent/WO2012023103A2/en
Publication of WO2012023103A3 publication Critical patent/WO2012023103A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a method for producing a silver-containing conductive track on a silicon substrate coated with an antireflection layer, with a weakly doped interface layer having a sheet resistance > 60 Ω/sq and a more highly doped contact region with respect to the conductive track at the surface of the silicon substrate, wherein the sheet resistance of the contact region is < 60 Ω/sq, wherein a self-doping material containing silver and dopants is applied locally to the silicon substrate and the silicon substrate with the self-doping material is heated. The problem addressed by the present invention is that of providing a cost-effective method for producing silver-containing conductive tracks on a silicon substrate surface coated with an antireflection coating; in this case, firstly the intention is to achieve a good contact between conductive tracks and substrate, for which purpose, by means of the substrate being more highly doped, the sheet resistance of the substrate surface in the contact region with the conductive tracks is reduced to values of less than 60 Ω/sq; secondly, even when cost-effective silicon substrates, for example polycrystalline silicon substrates, are used, the intention is to avoid short circuits at the pn junction of the solar cell as a result of silver crystals. The problem is solved by means of a method of the generic type stated wherein the self-doping material contains silver, dopants and tin.
PCT/IB2011/053619 2010-08-20 2011-08-16 Method for producing an improved contact between a silver-containing conductive track and silicon WO2012023103A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010037088A DE102010037088A1 (en) 2010-08-20 2010-08-20 Method for producing an improved contact between a silver-containing interconnect and silicon
DE102010037088.6 2010-08-20

Publications (2)

Publication Number Publication Date
WO2012023103A2 WO2012023103A2 (en) 2012-02-23
WO2012023103A3 true WO2012023103A3 (en) 2012-09-07

Family

ID=44860449

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2011/053619 WO2012023103A2 (en) 2010-08-20 2011-08-16 Method for producing an improved contact between a silver-containing conductive track and silicon

Country Status (2)

Country Link
DE (1) DE102010037088A1 (en)
WO (1) WO2012023103A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
WO2010000234A1 (en) * 2008-07-02 2010-01-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Composition with a pasty consistency for forming electrical contacts on a silicon solar wafer, and contact produced therewith
US20100096014A1 (en) * 2006-12-25 2010-04-22 Hideyo Iida Conductive paste for solar cell
DE102008037613A1 (en) * 2008-11-28 2010-06-02 Schott Solar Ag Method of making a metal contact
US20100167510A1 (en) * 2009-07-02 2010-07-01 Innovalight, Inc. Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219448A (en) * 1978-06-08 1980-08-26 Bernd Ross Screenable contact structure and method for semiconductor devices
DE102008033223A1 (en) 2008-07-15 2010-01-21 Deutsche Cell Gmbh Contact-structure producing method for solar cell, involves tempering semiconductor-substrate with germination layer for diffusion of dopant from germination layer into semiconductor-substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US20100096014A1 (en) * 2006-12-25 2010-04-22 Hideyo Iida Conductive paste for solar cell
WO2010000234A1 (en) * 2008-07-02 2010-01-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Composition with a pasty consistency for forming electrical contacts on a silicon solar wafer, and contact produced therewith
DE102008037613A1 (en) * 2008-11-28 2010-06-02 Schott Solar Ag Method of making a metal contact
US20100167510A1 (en) * 2009-07-02 2010-07-01 Innovalight, Inc. Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles

Also Published As

Publication number Publication date
DE102010037088A1 (en) 2012-02-23
WO2012023103A2 (en) 2012-02-23

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