WO2011156069A3 - Memory arrays - Google Patents
Memory arrays Download PDFInfo
- Publication number
- WO2011156069A3 WO2011156069A3 PCT/US2011/035601 US2011035601W WO2011156069A3 WO 2011156069 A3 WO2011156069 A3 WO 2011156069A3 US 2011035601 W US2011035601 W US 2011035601W WO 2011156069 A3 WO2011156069 A3 WO 2011156069A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bitlines
- series
- global
- horizontal direction
- memory cell
- Prior art date
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
- G01R33/44—Arrangements or instruments for measuring magnetic variables involving magnetic resonance using nuclear magnetic resonance [NMR]
- G01R33/48—NMR imaging systems
- G01R33/58—Calibration of imaging systems, e.g. using test probes, Phantoms; Calibration objects or fiducial markers such as active or passive RF coils surrounding an MR active material
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1284—Spin resolved measurements; Influencing spins during measurements, e.g. in spintronics devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1093—Input synchronization
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K999/00—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS dummy group
- H05K999/99—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS dummy group dummy group
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
- H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
- G01R33/24—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/18—Memory cell being a nanowire having RADIAL composition
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020127031988A KR101417568B1 (en) | 2010-06-07 | 2011-05-06 | Memory arrays |
EP11792836.6A EP2577668B1 (en) | 2010-06-07 | 2011-05-06 | Memory arrays |
JP2013514178A JP5549962B2 (en) | 2010-06-07 | 2011-05-06 | Memory array. |
SG2012089520A SG186189A1 (en) | 2010-06-07 | 2011-05-06 | Memory arrays |
CN201180027954.6A CN102939632B (en) | 2010-06-07 | 2011-05-06 | Memory arrays |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/795,565 US8289763B2 (en) | 2010-06-07 | 2010-06-07 | Memory arrays |
US12/795,565 | 2010-06-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011156069A2 WO2011156069A2 (en) | 2011-12-15 |
WO2011156069A3 true WO2011156069A3 (en) | 2012-02-02 |
Family
ID=45064357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2011/035601 WO2011156069A2 (en) | 2010-06-07 | 2011-05-06 | Memory arrays |
Country Status (8)
Country | Link |
---|---|
US (11) | US8289763B2 (en) |
EP (1) | EP2577668B1 (en) |
JP (1) | JP5549962B2 (en) |
KR (1) | KR101417568B1 (en) |
CN (1) | CN102939632B (en) |
SG (1) | SG186189A1 (en) |
TW (1) | TWI517304B (en) |
WO (1) | WO2011156069A2 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US8289763B2 (en) | 2010-06-07 | 2012-10-16 | Micron Technology, Inc. | Memory arrays |
CN102881317B (en) * | 2011-07-13 | 2015-08-12 | 华邦电子股份有限公司 | 3 D memory array |
US8835990B2 (en) * | 2011-08-12 | 2014-09-16 | Winbond Electronics Corp. | 3D memory array |
KR101957897B1 (en) * | 2012-04-26 | 2019-03-13 | 에스케이하이닉스 주식회사 | Resistance variable memory device and method for fabricating the same |
US8841649B2 (en) * | 2012-08-31 | 2014-09-23 | Micron Technology, Inc. | Three dimensional memory array architecture |
US8729523B2 (en) * | 2012-08-31 | 2014-05-20 | Micron Technology, Inc. | Three dimensional memory array architecture |
KR20140054975A (en) * | 2012-10-30 | 2014-05-09 | 에스케이하이닉스 주식회사 | Variable resistance memory device |
KR20140113024A (en) * | 2013-03-15 | 2014-09-24 | 에스케이하이닉스 주식회사 | Resistance variable Memory Device And Method of Driving The Same |
US9728584B2 (en) * | 2013-06-11 | 2017-08-08 | Micron Technology, Inc. | Three dimensional memory array with select device |
KR102061694B1 (en) | 2013-10-14 | 2020-01-02 | 삼성전자주식회사 | Semiconductor memory device having three-dimensional cross point array |
US9236124B2 (en) | 2014-03-07 | 2016-01-12 | Kabushiki Kaisha Toshiba | Nonvolatile memory device |
KR20150124517A (en) * | 2014-04-28 | 2015-11-06 | 에스케이하이닉스 주식회사 | Electronic device |
KR102203459B1 (en) | 2014-08-11 | 2021-01-15 | 삼성전자주식회사 | Semiconductor device |
KR20180098619A (en) * | 2015-12-30 | 2018-09-04 | 후아웨이 테크놀러지 컴퍼니 리미티드 | Bidirectional optical sub-assembly |
US9837471B2 (en) | 2016-04-14 | 2017-12-05 | Western Digital Technologies, Inc. | Dual OTS memory cell selection means and method |
US10269804B2 (en) | 2016-05-11 | 2019-04-23 | Micron Technology, Inc. | Array of cross point memory cells and methods of forming an array of cross point memory cells |
KR20180064084A (en) * | 2016-12-05 | 2018-06-14 | 삼성전자주식회사 | Semiconductor device and method for fabricating the same |
KR102345542B1 (en) * | 2017-06-02 | 2021-12-30 | 삼성전자주식회사 | Semiconductor device having variable resistor memory device |
US10461125B2 (en) | 2017-08-29 | 2019-10-29 | Micron Technology, Inc. | Three dimensional memory arrays |
US10593730B1 (en) * | 2018-10-10 | 2020-03-17 | Micron Technology, Inc. | Three-dimensional memory array |
US10700128B1 (en) * | 2018-12-21 | 2020-06-30 | Micron Technology, Inc. | Three-dimensional memory array |
KR20210007737A (en) | 2019-07-12 | 2021-01-20 | 에스케이하이닉스 주식회사 | Vertical memory device |
CN117881189A (en) * | 2020-11-13 | 2024-04-12 | 武汉新芯集成电路制造有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
US11475947B1 (en) | 2021-04-15 | 2022-10-18 | Micron Technology, Inc. | Decoding architecture for memory tiles |
US11894103B2 (en) | 2021-04-15 | 2024-02-06 | Micron Technology, Inc. | Decoding architecture for word line tiles |
US11587606B2 (en) | 2021-04-15 | 2023-02-21 | Micron Technology, Inc. | Decoding architecture for memory devices |
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