WO2011109948A1 - 一种功率型发光二极管 - Google Patents

一种功率型发光二极管 Download PDF

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Publication number
WO2011109948A1
WO2011109948A1 PCT/CN2010/071730 CN2010071730W WO2011109948A1 WO 2011109948 A1 WO2011109948 A1 WO 2011109948A1 CN 2010071730 W CN2010071730 W CN 2010071730W WO 2011109948 A1 WO2011109948 A1 WO 2011109948A1
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WO
WIPO (PCT)
Prior art keywords
right brackets
brackets
semi
bracket
power led
Prior art date
Application number
PCT/CN2010/071730
Other languages
English (en)
French (fr)
Inventor
卞长友
王月华
Original Assignee
浙江金谷包装印刷有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN2010201324382U external-priority patent/CN201673905U/zh
Priority claimed from CN2010101247681A external-priority patent/CN102194810A/zh
Application filed by 浙江金谷包装印刷有限公司 filed Critical 浙江金谷包装印刷有限公司
Priority to US12/811,323 priority Critical patent/US8264076B2/en
Publication of WO2011109948A1 publication Critical patent/WO2011109948A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Definitions

  • the invention relates to a light source manufacturing technology, in particular to a power type light emitting diode.
  • LEDs have highlighted their advantages in applications such as landscape, indication, display, backlight, and special lighting, and have exerted tremendous effects such as energy saving, longevity, and fast response.
  • the development of LED has only been for decades, and it has been dominated by low-power LEDs. Due to the dynamic control of brightness and color, the small size, long life, no infrared and ultraviolet light in the beam, and strong directionality of the LED make it a large-scale entry into the general lighting field.
  • the power LEDs on the market are mainly in the surface-mount type structure, which is to fix one or several light-emitting chips on a flat substrate. Since the light-emitting angle of the wafer itself does not exceed 180 degrees, the surface-mount structure is affected by the wafer. The angle of the LED and the shielding of the planar substrate, the LED illumination angle of this structure does not exceed 180 ° at most, and there is an angle limitation. Therefore, the LED of this structure should replace the incandescent bulb, and when it is applied to general illumination, it must be multiple.
  • the assembled body module can be used only after the illumination angle exceeds 180 °.
  • There is another stereoscopic 360-degree light source (Chinese Patent Application No.: 200780019635. 4, inventor name: a semiconductor light source for physical space illumination with a three-dimensional support), which can achieve a stereoscopic illumination effect, but the structure of the stent design
  • the coaxial three-dimensional bracket is used, and the three-dimensional bracket with the shaft is composed of a hollow shell (cathode) and a cap with an extended guide pin (anode) set, and the insulating material is used to isolate and fix the anode and the cathode.
  • the chip is fixed on the cathode and only relies on the cathode to dissipate heat.
  • An object of the present invention is to provide a power type light emitting diode with which a semiconductor illumination light source can be fabricated and has a good heat dissipation effect.
  • the present invention adopts the following design scheme:
  • a power type light emitting diode having a holder body and a set of illuminating wafers disposed thereon and an outer fluorescent substance wrapping layer; the bracket body is formed by opposing left and right brackets; the left side The upper part of the right two brackets is a semi-column or a semi-cone and a semi-ring with a multi-directional solid surface; a set of illuminating wafers are fixedly arranged on the solid crystal surfaces of the left and right brackets, respectively.
  • the wires are realized in series or in parallel and one of the two brackets is used as the anode, and the other is used as the cathode; a bracket body which can make the left and right brackets as a unitary structure and the insulating material layer insulated from each other is wrapped in the middle portion of the left and right brackets A fluorescent layer covering the luminescent wafer, covering the upper peripheral side of the two stents.
  • the upper part of the left and right brackets is a semi-column with a multi-directional solid crystal surface, and the multi-directional solid crystal surface on the semi-column of the bracket is at least a horizontal solid surface and a periphery at the top A set of solid crystal faces on the longitudinal side.
  • the number of light-emitting wafers disposed on the top solid surface of each of the supports is 1/2 of the total number of light-emitting wafers disposed on the respective solid crystal faces on the longitudinal side.
  • the opposite faces of the left and right brackets are preferably smooth planes, and the opposite faces are preferably arranged in parallel with each other.
  • the bottom section of the two brackets is provided with a straight pin or a patch foot as a pole.
  • the surface of the material of the left and right brackets is plated with a metal layer that prevents oxidation of the stent.
  • the left and right brackets are made of metal or ceramic metallized layers.
  • the metal bracket and the ceramic metal-clad bracket have small thermal resistance.
  • the left and right brackets can be electrically connected and can dissipate heat.
  • only one polarity heat dissipation can greatly improve the heat dissipation performance, and the LED can be used in use.
  • the heat energy is efficiently dissipated, which can improve the service life of the product, and it is easy to realize a higher power light-emitting chip package, and the power can reach 5W, 8W, 10W or higher depending on the use of different semiconductor light-emitting materials.
  • bracket of the power LED of the invention makes it suitable for lighting products Devices using conventional LEDs are compatible, and the illuminating effect is equivalent to the existing stereoscopic 360-degree light source (Chinese Patent Application No.: 200780019635. 4), but the effect of heat dissipation is multiplied.
  • bracket structure makes the assembly and maintenance of the product extremely convenient, and under certain conditions, the heat sink for auxiliary heat dissipation can be omitted, the assembly process can be reduced, and the manufacturing cost of the product is greatly reduced.
  • This power type LED product uses the side and top of the bracket to fix the light-emitting chip, and directly encapsulates the fluorescent material to form a multi-chip integrated large-angle light-emitting diode, which greatly increases the lightness saturation of the approximate sphere and the consistency of the color. It is better than the stereoscopic 360-degree light source of the existing (Chinese Patent Application No.: 200780019635. 4) in terms of light saturation and color consistency, and can be consistent with the color of traditional LED.
  • FIG. 1 is a schematic structural view of a power LED according to the present invention.
  • FIG. 2 is a schematic view showing the appearance of a power LED according to the present invention.
  • FIG 3 is a schematic structural view (cross section) of a power LED according to the present invention.
  • FIG. 4 is a schematic structural view of an embodiment of a power LED according to the present invention (no phosphor layer 7; a main view, b is a top view, and c is a left view).
  • FIG. 5 is a schematic structural view of another embodiment of a power LED according to the present invention (no phosphor layer 7; a main view, b is a top view, and c is a left view).
  • FIG. 6 is a schematic structural view of still another embodiment of a power LED according to the present invention (no phosphor layer 7; a main view, b is a top view, and c is a left view).
  • the power LED of the present invention mainly comprises a left bracket 1 , a right bracket 2 , an insulating material 3 fixedly connected to the two brackets, an illuminating wafer 5 and an external fluorescent substance 7 .
  • the present invention breaks through the conventional structural form, and the structure of the bracket body is innovatively designed as two separate structures spaced apart from each other and insulated from each other, so that the two sub-brackets 1, 2 are used as brackets. At the same time, it can also act as a pole leg.
  • the left and right brackets are made of metal with electrical and thermal conductivity or The ceramic metal-clad material is made of good material.
  • the advantage of its material and configuration makes the heat dissipation fast. It can change the way the prior art needs to match the heat sink to assist the heat dissipation.
  • the configuration and size of the left and right brackets can be properly designed. Eliminating the need for heat sinks to assist in heat dissipation can reduce assembly processes and greatly reduce costs, and maintenance is extremely convenient. Of course, in special circumstances (such as preparing more power), it can also be equipped with a heat sink to assist heat dissipation.
  • the surface of the left and right brackets should also be coated with a metal layer that prevents oxidation of the bracket.
  • the upper portions of the left and right brackets are semi-cylindrical or semi-conical or semi-annular; the outer surfaces of the semi-cylindrical or semi-conical or semi-annular bodies are used as the fixed surface 4.
  • the shape and position of the opposing faces of the left bracket 1 and the right bracket 2 are preferably symmetrically set, and particularly preferably, they are preferably flat and parallel to each other, and are not limited thereto.
  • the opposite faces of the left bracket 1 and the right bracket 2 are smooth planes and are relatively parallel arranged, and the brackets are semi-column
  • Some of the multi-directional solid crystal faces are at least a horizontal solid surface on the top and a set of solid crystal faces on the longitudinal side.
  • the best solution is to design the number of illuminating wafers on the top solid surface of each bracket to be 1/2 of the total number of illuminating wafers disposed on the longitudinal solid surfaces; since several sets of LEDs are serially connected in parallel The structure, and the LED is driven by a constant current, so the number of illuminating wafers per channel is equal to achieve a small difference in current passing through each path, thereby achieving color consistency.
  • the set of the light-emitting chips 5 are respectively disposed on the side and the top of the left bracket 1 and the right bracket 2, and the positive (negative) and right brackets 2 of the first light-emitting chip on the side of the left bracket 1 are utilized.
  • the wires 6 are electrically connected, and the negative electrode (positive electrode) of the last light-emitting chip is electrically connected to itself by the wires 6, and the respective light-emitting wafers 5 are connected by wires 6, whereby the wafers on the left frame 1 are connected in series.
  • the negative electrode (positive electrode) of the first light-emitting chip on the side of the right holder 2 is electrically connected with the left holder 1 by the wire 6, and the positive electrode (negative electrode) of the last light-emitting chip is electrically connected with itself, whereby the wafer on the right holder 2 is formed.
  • the left bracket 1 and the right bracket 2 are fixed on the top of one set of the illuminating wafer 5, and the negative pole (positive electrode) of one wafer at the top of the left bracket 1 is electrically connected with itself by the wire 6, and the positive electrode (negative electrode) of the top of the right bracket 2 is made of the wire 6 An electrical connection is made to itself, and the respective wires on the top of the left and right brackets are connected in series by wires 6.
  • the chip connection method is a series-and-parallel structure, so the LED current and voltage for making its higher power are not particularly large, making it easier for downstream applications to design a high-efficiency driving power source.
  • the series structure requires the voltage of each string to be equivalent, so the number of the light-emitting chips disposed on the top solid surface of the left and right brackets is the longitudinal solid surface of each side.
  • the total number of illuminating wafers set is 1/2 of the total, so that each string voltage is equivalent.
  • the best design of this design is: four (or two) illuminating wafers 5 are fixed on the sides of the left and right brackets, and two (or one) illuminating wafers are fixed on the top, so that the wafers on the entire bracket form four strings of three (or two strings of three ) Connection. If the voltage of each string is not equal, the color uniformity of the product will be poor, and the light-emitting chip cannot achieve maximum efficiency. Referring to FIG.
  • the upper portions of the left and right brackets are each in the form of a semi-conical shape, and the semi-vertebral body does not need to be fixed on the top of the semi-vertebral body, and since the top portion has no shielding effect, Does not affect the emission of light on the side of the bracket, and will not cause uneven light color.
  • the upper part of the left and right brackets can also be designed as a half ring body, and the opposite faces of the left and right brackets are preferably smooth transition surfaces.
  • the hollow space enclosed by the two half-ring brackets may be provided with a heat-dissipating material (such as a heat pipe or other high heat-dissipating material) to achieve an excellent heat dissipation effect, thereby making a LED with higher power.
  • a heat-dissipating material such as a heat pipe or other high heat-dissipating material
  • the semi-cylinder or the semi-cone and the semi-ring of the upper part of the left and right brackets may be designed as a hollow structure, and a substance for assisting heat dissipation may be added in the hollow space.
  • the middle and lower portions of the left and right brackets may be composed of a combination of irregular shapes.
  • the bending portion adopts a curved chamfering, and other shapes such as a right angle shape may be adopted.
  • the bottom of the bending portion is engaged with the lower portion of the bracket, and the portion may be a conductor of any shape, and the bottom portion or the lower side portion of the lower portion of the bracket may be Lead the polar foot.
  • the left and right bracket structures may be the same or different, and the two may be symmetrically arranged or may be asymmetric.
  • a set of one (one or more) light-emitting wafers 5 are fixedly disposed on the solid crystal faces of the left and right brackets, and the negative (positive) poles of the light-emitting wafers 5 pass through the wires 6 and positive (negative) The pole forms an electrical connection.
  • Each of the light-emitting wafers is realized in series or in parallel by wires.
  • one of the two brackets is used as the positive polarity leg, and the other bracket is used. It is the negative polarity leg.
  • the insulating material layer 3 which can make the left and right brackets are integrated and insulated from each other is wrapped around the middle portion of the left and right brackets; the left and right brackets can be fixed as a whole bracket structure by the insulating material 3, and the connection is When the two brackets are arranged in parallel relative to each other, the gaps are all or partially filled with the insulating material 3.
  • the polarity lead legs extend from the bottom or sides of the two brackets below the insulating material 3.
  • the feet of the two brackets may be in the form of straight-in Pi n feet 11, 21 (shown in Figure 5) or patch feet 11, 21 (shown in Figure 4).
  • a fluorescent layer 7 covering the luminescent wafer is covered on the upper portion of the two stents.
  • the illuminating of the illuminating wafer is full-angle illuminating, so that the external fluorescent substance 7 is designed to protect the illuminating wafer 5, the wire 6 and the light emitted from the illuminating wafer 5 from being mixed into white light.
  • the present invention passes through the illuminating wafer 5.
  • the combination of different positions and external phosphors 7 makes the new power LEDs have an overall illumination angle of 270 ° (horizontal) / 270 ° (vertical) or less than 270 degrees; the shape of the light is approximately 2/3 sphere shape, which can be assembled in multiple pieces. It can also be applied directly to lighting products.
  • the above-described embodiments are susceptible to variations in the scope of the invention, and the scope of the invention is intended to be illustrative and not to limit the scope of the invention.

Description

一种功率型发光二极管 技术领域
本发明涉及一种光源制造技术， 尤其涉及一种功率型发光二极管。 背景技术 发光二极管 LED作为第四代照明能源， 在景观、 指示、 显示、 背光及特种照 明等应用领域突显其优势，且已经发挥了节能、长寿、响应速度快等巨大的功效。 在照明技术发展的百年历史中， LED的发展不过几十年， 以前一直以小功率发光 二极管应用为主。由于 LED在亮度和色彩的动态控制容易、外形尺寸小、长寿命、 光束中不含红外线和紫外线、很强的发光方向性等特点使其大规模进军普通照明 领域。但是要想充分发挥 LED的性能优势， 进入普通照明市场， 必须发展功率型 发光二极管， 提高发光效率， 提升色泽的一致性。 而目前市场上的功率型 LED, 主要是以表贴型结构， 既是在一个平面基板上 固定一颗或几颗发光芯片， 由于晶片本身发光角度不会超过 180度，所以此表贴 结构受晶片本身角度和平面基板挡光影响，这种结构的 LED发光角度最大不会超 过 180 ° ， 存在着角度限制， 所以这种结构的 LED要取代白炽灯泡、 应用于普通 照明时， 必须将其多颗组装成立体模组、 使其发光角度突破 180 ° 后才能使用。 还有另外一种立体发光 360度光源（中国专利申请号： 200780019635. 4， 发明名 称：含三维支架的用于物理空间照明的半导体光源），其可以达到立体发光效果， 但其支架设计的结构是采用同轴立体支架，其配轴的三维立体支架是由空心管壳 (阴极）和帽盖配有延长的导针（阳极）套装一起， 利用绝缘物质来隔离和固定 阴阳极作用， 其多颗晶片固晶在阴极上， 仅靠阴极散热， 其次支架上的螺纹结构 在实际照明使用上与热沉上的螺母不能紧密贴合， 与热沉实际接触面积不大，所 以其支架本身散热效果较差， 导致照明效果较差， 另外配备部件繁多、 组装工艺 比较复杂。 发明内容
本发明的目的是提供一种功率型发光二极管， 利用其可制作半导体照明光 源， 并具有良好的散热效果。
为实现上述目的， 本发明采取以下设计方案：
一种功率型发光二极管，具有支架体及安置其上的一组发光晶片和外部的荧 光物质包裹层；所述的支架体由相对的左、右两个支架间隔相置构成；所述的左、 右两个支架的上部为带有多向固晶面的半柱体或半锥体、半环体；在左和右支架 的固晶面上分别固定设置一组发光晶片，各发光晶片由导线实现串或并联并以两 支架之一作为阳极， 另一支架作为阴极； 一可使左、右支架成为一体结构的支架 体且相互绝缘的绝缘物质层覆裹在左、右支架的中部段； 一可将发光晶片覆在其 内的荧光层， 覆盖在两支架合体的上部外围侧。
所述的左、右两个支架的上部为带有多向固晶面的半柱体， 该支架半柱体上 带有的多向固晶面至少为在顶部的一水平固晶面及外围纵侧的一组固晶面。各支 架上在顶部固晶面上设置的发光晶片的个数是纵侧各固晶面上设置的发光晶片 总数和的 1/2。
所述左、 右两个支架的相对面应是平滑平面为佳， 且相对的面相互平行设置 最佳。
所述两支架的底部段设有作为极脚的直插 Pin脚或贴片折脚。
在左、 右支架的材质表面镀有起到防止支架氧化的金属层。
所述的左、 右支架均由金属或陶瓷覆金属材质层制成。
本发明的优点是：
1、 金属支架、 陶瓷覆金属支架热阻小， 左、 右支架既导通电性， 又均能散 热， 与传统支架只有一个极性散热相比可大大提高散热性能，将发光二极管使用 中产生的热能高效的散发出去，可提高产品的使用寿命， 容易实现更大功率的发 光芯片封装， 根据使用不同的半导体发光物， 功率可达到 5W、 8W、 10W或更高。
2、 本发明功率型发光二极管的支架的特殊设计， 使其在照明产品应用中和 使用传统 LED 的设备可以兼容， 且发光效果等同于现有 （中国专利申请号： 200780019635. 4 ) 的立体发光 360度光源， 但散热的效果却成倍增强。
3、 支架结构的设计使得产品的组装及维修都极为便利， 且在一定条件下可 省去辅助散热的热沉， 能减少组装工序， 大大降低产品的制造成本。
4、 此功率型发光二极管产品利用支架侧面和顶部固设发光晶片， 利用荧光 物质直接包覆后形成多芯片集成大角度发光二极管，大大增加近似球体的光形饱 和度， 以及色泽的一致性。在光形饱和度和色泽一致性上比现有（中国专利申请 号： 200780019635. 4 ) 的立体发光 360度光源更好， 可以和传统 LED色泽一致性 媲美。 附图说明
图 1 为本发明功率型发光二极管结构示意图。
图 2 为本发明功率型发光二极管外观构型示意图。
图 3 为本发明功率型发光二极管结构示意图 （剖面） 。
图 4 为本发明功率型发光二极管一实施例的结构示意图 （无荧光物质层 7 ; a为主视， b为俯视， c为左视） 。
图 5 为本发明功率型发光二极管另一实施例的结构示意图 （无荧光物质层 7； a为主视， b为俯视， c为左视） 。
图 6 为本发明功率型发光二极管又一实施例的结构示意图 （无荧光物质层 7； a为主视， b为俯视， c为左视） 。
下面结合附图及具体实施例对本发明做进一步详细说明： 具体实施方式
参阅图 1、 图 2和图 3所示， 本发明功率型发光二极管主要包括左支架 1， 右支架 2， 固定连接两支架的绝缘物质 3， 发光晶片 5及外部荧光物质 7。 参见图 1所示， 本发明突破了传统的结构形式， 创新的将支架体的结构设计 为左右间隔设置且相互绝缘的两个分体结构， 使两个分支架 1、 2在当作支架的 同时又可同时担当极腿的作用， 该左、 右支架均由具有导电和导热功能的金属或 陶瓷覆金属材质制成为佳， 利用其材质及构型的优势， 使得散热迅速， 可以改变 现有技术需要匹配热沉辅助散热的方式，将左、右支架的构型及尺寸大小设计适 当即可省去配备热沉辅助散热，可以减少组装的工序及大大降低成本， 维修也极 为便利。 当然， 在特需情况下 （如制备更大的功率） 亦可同时加配热沉辅助散热。 在左、 右支架的材质表面还应镀有起到防止支架氧化的金属层。 所述的左、右两个支架的上部呈半柱体或半锥体或者半环体； 将这些半柱体 或半锥体或者半环体的外表面作为固晶面 4。 左支架 1和右支架 2的相对面形状 及位置对称设置为佳， 尤以平滑平面且相互平行设置最佳， 亦可是不受此限。 当左、 右两个支架的上部为带有多向固晶面的半柱体时， 左支架 1和右支架 2 的相对面是平滑平面且相对平行设置较佳， 该支架半柱体上带有的多向固晶面 至少为在顶部的一水平固晶面及纵侧的一组固晶面。最佳方案是：将各支架上在 顶部固晶面上设置的发光晶片的个数设计为是纵侧各固晶面上设置的发光晶片 总数和的 1/2 ; 由于几组 LED是串并联结构， 且 LED是定电流驱动， 所以每路发 光晶片数目相等从而达到每路所通过电流差异较小， 从而达到颜色一致性。
参见图 4、 图 5， 所述的一组发光晶片 5分别布在左支架 1和右支架 2的侧 面和顶部， 左支架 1侧面上第一个发光晶片的正极（负极）与右支架 2利用导线 6形成电连接， 最后一个发光晶片负极 （正极） 利用导线 6与自身形成电连接， 各个发光晶片 5之间利用导线 6连接， 以此左支架 1上的晶片形成串联。右支架 2侧面上的第一个发光晶片的负极 （正极） 与左支架 1利用导线 6形成电连接， 最后一个发光晶片正极（负极）与自身形成电连接， 以此右支架 2上的晶片形成 串联。 左支架 1， 右支架 2顶部固一组发光晶片 5， 左支架 1顶部的一个晶片的 负极（正极）利用导线 6与自身形成电连接， 右支架 2顶部的一个晶片正极（负 极）利用导线 6与自身形成电连接，左右支架顶部各个晶片之间利用导线 6形成 串联连接。这样使整个支架上的发光晶片形成串并结构。 由于此支架上的发光晶 片电连接方式是串并结构，所以制作其更大功率的 LED电流电压不会特别大，使 其下游应用产品更容易设计高效率的驱动电源。另外由于 LED的特性是定电流驱 动最佳， 故串并结构需每一串路的电压相当，所以左右支架上在顶部固晶面上设 置的发光晶片的个数是其纵侧各固晶面上设置的发光晶片总数和的 1/2， 以此达 到每一串路电压相当。 此设计最佳是： 左右支架的侧面固定四 （或两）颗发光晶 片 5，顶部固定两（或一）颗发光晶片， 使其整个支架上的晶片形成四串三并（或 两串三并） 的连接。 若是每一串路的电压不等则会造成产品的颜色均匀性不佳， 且发光晶片不能达到最大效率。 参见图 6所示， 其为本发明另外一种实施例， 左、 右支架的上部各为半锥形 的形式， 所述的半椎体其顶部不需固晶片， 由于其顶部没有遮挡作用， 不影响支 架侧面光的散发， 不会造成光色的不均匀。 本发明还可以将左、 右支架的上部设计为半环体， 所述左、 右两个支架的相 对面均各是平滑过渡面为佳。 所述的两半环体支架其中间围成的中空空间可以加 设利于散热的物质 （如： 热管或者其他高散热物质） ， 以达到极佳的散热效果， 使其制作更大功率的 LED。 上述左、右两个支架上部的半柱体或半锥体、半环体更可以设计为中空结构， 在中空的空间内同样可以加设用于辅助散热的物质。
所述的左、 右两支架的中、 下部可以是由不规则形状组合构成。 本实施实例 中， 折弯处采用弧形倒角， 也可以采用直角形等其他形状， 折弯处的底部与支架 下部接合，该部分可以为任意形状导体，支架下部的底部或下侧部可引出极性脚。 所述的左、 右两支架结构可以相同亦可不同， 两者对称设置为佳， 也可以不 对称。 在左和右支架的固晶面上分别固定设置一组 （1个即可， 多个也不限） 发光 晶片 5， 所述的发光晶片 5的负 （正） 极通过导线 6与正 （负） 极形成电连接。 各发光晶片由导线实现串或并联。并以两支架之一作为正极极性腿， 另一支架作 为负极极性腿。 一可使左、 右支架成为一体结构且相互绝缘的绝缘物质层 3覆裹在左、 右支 架的中部段；利用绝缘物质 3可以将上述的左、右两支架固定为一整体支架结构， 连接时，两支架平行相对排列为佳，两者间隙全部或部分位置由绝缘物质 3填充。 极性引出脚则从位于绝缘物质 3下方的两支架底部或侧面延出。两支架的底脚可 以采用直插 Pi n脚 11、 21 (如图 5所示） 或贴片折脚 11、 21 (如图 4所示） 形 式。 一可将发光晶片覆在其内的荧光层 7， 覆盖在两支架合体的上部。 发光晶片的发光是全角度发光的， 故外部荧光物质 7的设计可以保护其支架 内部的发光晶片 5、 导线 6以及可和发光晶片 5发出的光混光成白光， 本发明通 过发光晶片 5的不同位置组合和外部荧光物质 7使此新型功率型发光二极管整体 发光角度达到 270 ° (水平）/270 ° (垂直） 或者小于 270度； 光形近似 2/3球体 形状， 既可以多颗组装使用， 也可单颗直接应用于照明产品。 上述各实施例可在不脱离本发明的范围下加以若干变化，故以上的说明所包 含及附图中所示的结构应视为例示性， 而非用以限制本发明的申请专利保护范 围。

Claims

权 利 要 求 书
1、 一种功率型发光二极管， 具有支架体及安置其上的一组发光晶片； 其特 征在于：
所述的支架体由相对的左、 右两个支架间隔相置构成；
所述的左、右两个支架的上部为带有多向固晶面的半柱体或半锥体、半环体; 在左和右支架的固晶面上分别固定设置一组发光晶片，各发光晶片由导线实 现串或并联并以两支架之一作为阳极， 另一支架作为阴极；
一可使左、右支架成为一体结构的支架体且相互绝缘的绝缘物质层， 覆裹在 左、 右支架的中部段；
一可将发光晶片覆在其内的荧光物质包裹层，覆盖在两支架合体的上部外围侧。
2、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 所述的左、 右 两个支架的上部为带有多向固晶面的半柱体，该支架半柱体上带有的多向固晶面 至少为在顶部的一水平固晶面及外围纵侧的一组固晶面。
3、 根据权利要求 2所述的功率型发光二极管， 其特征在于： 各支架上在顶 部固晶面上设置的发光晶片的个数是纵侧各固晶面上设置的发光晶片总数和的 1/2。
4、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 所述左、 右两 个支架的相对面是平滑平面， 且相对的面相互平行。
5、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 所述左、 右两 个支架的相对面是平滑过渡面。
6、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 所述两支架的 底部段设有作为极脚的直插 Pin脚或贴片折脚。
7、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 在左、 右支架 的材质表面镀有起到防止支架氧化的金属层。
8、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 所述的左、 右 支架均由金属或陶瓷覆金属材质层制成。
9、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 所述左、 右支 架上部的半柱体或半锥体、半环体为中空结构，该中空的空间内置有利于散热的 物质。
10、 根据权利要求 1所述的功率型发光二极管， 其特征在于： 所述左、 右支 架的上部为半环体， 左、 右半环体围成的中空空间内置有利于散热的物质。
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