WO2011095217A1 - Method and process for metallic stamp replication for large area nanopatterns - Google Patents
Method and process for metallic stamp replication for large area nanopatterns Download PDFInfo
- Publication number
- WO2011095217A1 WO2011095217A1 PCT/EP2010/051399 EP2010051399W WO2011095217A1 WO 2011095217 A1 WO2011095217 A1 WO 2011095217A1 EP 2010051399 W EP2010051399 W EP 2010051399W WO 2011095217 A1 WO2011095217 A1 WO 2011095217A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stamp
- recited
- metal
- layer
- imprint
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Definitions
- the present invention relates to replication of metal stamps assisted by imprinting lithography technology using an intermediate polymer stamp (IPS) consisting of micro- and nano-structures.
- IPS intermediate polymer stamp
- the invention of the imprint lithography by Kondo at NTT, a low-cost and high throughput manufacturing process, has been widely adopted in many applications, such as photonics, magnetic data storage, display, nano- micro-electromechanical system (NEMSs, MEMSs), nano- micro-electronics, biotech and chemical synthesis.
- NEMSs, MEMSs nano- micro-electromechanical system
- one of the key issues in the invented technique is to fabricate the imprint stamp with Nanopatterns in high resolution, large area, at a low cost, and it is simultaneously capable of pattering arbitrary nanostructures over a large area with long-range order at a low cost (J. J. Wang, et al. J. lightwave technol., vol.
- NIL Nano Imprint Lithography
- a nickel stamp not only provides high mechanical strength and durability but also enables cost-effective manufacturing via electroforming process (J. K. Luo, et al., Mater. Lett., vol. 58, pp. 2306-2309, 2004; T. Haatainen, et al., Microelectron. Eng., vol. 83, pp. 948-950, 2006; S. H.
- the suitable molds for electroforming should be conductive as well as anti-adhesive to the electroformed nickel stamp in order to facilitate multiple copies of nickel stamps from one original mold.
- a silicon stamp J. Kouba, et al., J. Phys. Conference Series, Vol. 34, p. 897 (2006)
- a quartz stamp Y. Hirai, et al., Jpn. J. Appl. Phys. Vol. 41 , p. 4186 (2002)
- a concentrated alkaline solvent has to be used to dissolve the templates.
- the original mold was destroyed and only capable of providing one-nickel stamp.
- Another well-known method is to use a structured and developed electron beam resist served directly as a galvanic form for nickel electroforming.
- Electron Beam Lithography (EBL)-resist master is the key issue to reduce the manufacturing cost of Nano-lmprint Lithography (NIL) and thereby to further promote application of NIL technology in the industry.
- EBL Electron Beam Lithography
- NIL Nano-lmprint Lithography
- electroforming via a familiar process facilitated more copies of the Ni-stamp, which have identical structures to that of the original EBL-master.
- one EBL-master only provides one "father” Ni- stamp with inverse features via electroforming.
- a "mother” stamp with identical structures to the EBL-master was obtained.
- One aspect of the present invention is provided by a method for obtaining a metal stamp having the same structure as a master stamp from at least one intermediate stamp, comprising the steps of providing a first imprint layer on top of a first carrier substrate, imprinting structures in the first imprint layer using a master stamp to obtain a first intermediate stamp, providing a conductive layer on top of the structured first intermediate stamp to obtain a seed layer, plating metal on top of the seed layer to obtain a metal stamp, and separating the first intermediate stamp from the metal stamp.
- Another aspect of the present invention is related to method for obtaining a metal stump with a structure inverse to that of the master stamp, where the metal stamp is obtained from at least two intermediate stamps according to the following steps: providing a second imprint layer on top of a second carrier layer, using the said first intermediate stamp to imprint structures in the second imprint layer in order to obtain a second intermediate stamp, providing a conductive layer on top of the second intermediate stamp to obtain a seed layer, plating metal on top of the seed layer to obtain a metal stamp, and separating the second intermediate stamp from the metal stamp.
- the first and second carrier substrates may comprise a polymer material, while the first carrier substrate may comprises a transparent material.
- the second carrier substrate may comprise transparent or nontransparent material, wherein the carrier substrates may comprises glass, a semiconductor material or metals.
- first and second imprint layers may be coated on top of the carrier substrates.
- Anti-sticking molecules may be provided in the resist before obtaining the seed layer and therefore the seed layer thickness of at least one atomic conductive layer may be sputtered on top of the structures in the first intermediate stamp.
- the seed layer may be sputtered on top of the structures of the second intermediate stamp.
- the conductive material may be a metal composed of at least one of the metals nickel, gold, silver, titanium, copper and aluminum.
- the metal stamp may be electroplated on top of the conductive layer.
- the structures imprinted in the imprint layer may comprise micro and nano- structures sizes greater than 5 nm.
- the first imprint layer and the second imprint layer material is conductive polymer
- a seed layer is not necessary. In this case the sputtering step is not performed, and the metal stamp is electroplated directly on top of the conductive polymer directly.
- the separation step between the intermediate stamps and the metal stamp may be achieved by mechanical demolding. It may also be mentioned that manufacturing of any of the metal stamps above may be performed at constant temperature in the range of 15-100 0 C, preferably 20-70 0 C.
- Fig. 1 shows a schematic diagram of stamp replication process via electroforming using IPS as the galvanic-template.
- Fig. 2 shows a schematic diagram of stamp replication process via a two-step imprint process using the IPS imprinted substrate as galvanic-template.
- Fig. 3 displays Scan Electron Microscope (SEM) and Atomic Force Microscope (AFM) images of the produced nickel stamp with photonic crystal structures.
- Fig. 4 displays SEM and AFM images of the produced nickel stamp with magnetic storage media structures.
- Fig. 5 displays SEM and AFM images of the imprinted Si-substrate.
- Fig. 6 displays SEM images acquired on the replicated nickel stamp.
- the method includes pattern transfer to an intermediate polymer stamp (IPS) where an IPS can either be directly used as a galvanic-master stamp to replicate the metal stamp (one-step imprinting), which has nanostructures identical to those of the original master stamp-
- IPS intermediate polymer stamp
- the IPS may also be used further to imprint a resist, such as, but not limited to, a thermoplastic/UV-curable resist on substrates (two-step imprinting). In this fashion the nanostructures on electroformed metal stamp will be inversed to that of the original master stamp.
- the invention offers a significant extension of the life-time of the original master stamp since the imprinting and demoulding only happens between the soft polymer material and the master stamp, thereby avoiding fracturing of the hard material and contaminants such as dust particles present at the interface between the master stamp and the IPS will be enclosed by the IPS.
- the direct electroforming from the IPS- based master stamp will result in easy separation between the master stamp and the metal stamp after electroforming. It has been shown that using IPS based
- nanoimprinting about 1000 IPS using one master stamp can be produced without contaminating or damaging the master stamp, which means that 1000 metal stamps could be replicated via electroforming based on one master stamp.
- the selected IPS material is UV-transparent, even if the original master stamp is opaque or UV- nontransparent, the UV-imprints can still be performed between the master stamp and IPS and also between the IPS and other opaque/UV-nontransparent substrates.
- Conformability of the IPS makes it capable of adapting to the non-planar master stamp or substrate;
- IPS Using an IPS avoids fractures on the hard material. For example, if some
- the nickel-stamp with structures identical to those of the original stamp is readily obtained via electroforming from an IPS according to figure 1.
- Figure 1 shows a schematic diagram of the stamp replication process via electroforming using IPS as the galvanic-template.
- the nickel stamp contains nanostructures identical to those of the original master stamp. It should be emphasized that either an additional fluorocarbon film via plasma-enhanced CVD, (such as shown by U. S. Patent No.
- a release layer deposited onto the imprinted substrate prior to the metallization of a seed layer is very crucial, since without the release layer the substrate resist was peeled off from the substrate and adhered strongly onto the electroformed Ni-stamps.
- a releasing film e.g. plasma enhanced Chemical
- the original master stamp was obtained, for instance, by a combined e-beam recording (EBR) and electroforming process.
- a nickel stamp obtained in this fashion consists of an array of width 230 nm PCS with a pitch of 450 nm and a depth of 130 nm across 4-inch patterned area.
- An acrylate imprint resist was coated onto a polycarbonate polymer sheet and then used as the substrate for nanoimprinting. After demoulding the IPS, it was inspected by AFM, SEM and an optical microscope. The surface of the IPS was further modified by depositing a thin ( ⁇ 6 nm) fluorocarbon film via plasma enhanced chemical vapor deposition. Then, a nickel seed layer was sputtered onto the IPS prior to electroforming.
- the thickness of the sputtered Ni-seed layer was 10 nm. Since we adopted nickel as the seed layer, the definition of the nanostructures should be maintained well. It could be seen that the replicated nickel-stamp has identical structures to that of the original master stamp, and the replicated features showed long-range order as well as high fidelity (Fig. 3).
- Example 2 Nickel stamp with magnetic storage media nanostructures
- An original nickel imprint was produced by a combined e-beam recording technique and an electroforming process.
- the patterns In a data track area the patterns have dimensions of 40 nm in width and 120nm in pitch.
- the imprinted IPS was inspected with SEM, using an acrylate imprint resist on a polycarbonate polymer sheet. The inverse nanofeatures were transferred with good fidelity.
- the electroforming After sputtering of a thin film ( ⁇ 1 Onm) of nickel, the electroforming was performed. The big advantage of sputtering a thin metal layer instead of thick layer is to avoid hole-inclusion due to narrow nanochannels with high aspect ratio and with high pattern density.
- the electroformed nickel stamp with nanostructures identical to those of the original master stamp was obtained (Fig. 4).
- Nickel stamp with photonic crystal structures The stamp consists of an array of dots with 200 nm in diameter with a pitch of 460 nm by 3-inch area.
- the IPS which comprises an acrylate imprint resist on a polycarbonate carrier polymer sheet, was imprinted onto master stamp.
- the IPS was further used to transfer the patterns onto the Si-wafer, which was pre-coated with an epoxy imprint resist (Fig. 5).
- the imprinted Si-wafer was finally used as a mold for electroforming to obtain the nickel stamp replica, which comprises structures inverse to those on the original stamp.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2010/051399 WO2011095217A1 (en) | 2010-02-05 | 2010-02-05 | Method and process for metallic stamp replication for large area nanopatterns |
US13/576,411 US20120297856A1 (en) | 2010-02-05 | 2010-02-05 | Method and process for metallic stamp replication for large area nanopatterns |
EP10706563A EP2531888A1 (en) | 2010-02-05 | 2010-02-05 | Method and process for metallic stamp replication for large area nanopatterns |
JP2012551510A JP2013518740A (en) | 2010-02-05 | 2010-02-05 | Methods and processes for metal stamp replication for large area nanopatterns |
CN201080061817XA CN102713752A (en) | 2010-02-05 | 2010-02-05 | Method and process for metallic stamp replication for large area nanopatterns |
KR1020127023157A KR101698838B1 (en) | 2010-02-05 | 2010-02-05 | Method and process for metallic stamp replication for large area nanopatterns |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2010/051399 WO2011095217A1 (en) | 2010-02-05 | 2010-02-05 | Method and process for metallic stamp replication for large area nanopatterns |
Publications (1)
Publication Number | Publication Date |
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WO2011095217A1 true WO2011095217A1 (en) | 2011-08-11 |
Family
ID=42357620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2010/051399 WO2011095217A1 (en) | 2010-02-05 | 2010-02-05 | Method and process for metallic stamp replication for large area nanopatterns |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120297856A1 (en) |
EP (1) | EP2531888A1 (en) |
JP (1) | JP2013518740A (en) |
KR (1) | KR101698838B1 (en) |
CN (1) | CN102713752A (en) |
WO (1) | WO2011095217A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3011391B1 (en) * | 2013-06-20 | 2018-07-18 | Ev Group E. Thallner GmbH | Mould with a mould pattern, and method for producing same |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8771529B1 (en) * | 2010-09-30 | 2014-07-08 | Seagate Technology Llc | Method for imprint lithography |
US9996053B2 (en) * | 2011-09-19 | 2018-06-12 | Crucible Intellectual Property, Llc | Nano- and micro-replication for authentication and texturization |
WO2017074264A1 (en) * | 2015-10-27 | 2017-05-04 | Agency For Science, Technology And Research | Nanoinjection molding |
EP3547026B1 (en) * | 2018-03-28 | 2023-11-29 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Method for producing a metal stamp for embossing a nano- and/or microstructure on a metal device as well as uses thereof and devices made therewith |
KR102142981B1 (en) * | 2018-05-29 | 2020-08-11 | 한국기계연구원 | Method of manufacturing metal layer having nano pattern |
CN114178067B (en) * | 2022-01-14 | 2023-04-28 | 苏州新维度微纳科技有限公司 | Nanometer stamping colloid sputtering device and method |
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US20030071016A1 (en) * | 2001-10-11 | 2003-04-17 | Wu-Sheng Shih | Patterned structure reproduction using nonsticking mold |
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EP1731961B1 (en) * | 2005-06-10 | 2008-11-05 | Obducat AB | Template replication method |
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EP2199855B1 (en) * | 2008-12-19 | 2016-07-20 | Obducat | Methods and processes for modifying polymer material surface interactions |
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-
2010
- 2010-02-05 CN CN201080061817XA patent/CN102713752A/en active Pending
- 2010-02-05 EP EP10706563A patent/EP2531888A1/en not_active Withdrawn
- 2010-02-05 WO PCT/EP2010/051399 patent/WO2011095217A1/en active Application Filing
- 2010-02-05 US US13/576,411 patent/US20120297856A1/en not_active Abandoned
- 2010-02-05 JP JP2012551510A patent/JP2013518740A/en active Pending
- 2010-02-05 KR KR1020127023157A patent/KR101698838B1/en active IP Right Grant
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JPS5422389A (en) | 1977-07-21 | 1979-02-20 | Toyama Chem Co Ltd | Novel 7alpha-methoxycephalosporins and their preparation |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3011391B1 (en) * | 2013-06-20 | 2018-07-18 | Ev Group E. Thallner GmbH | Mould with a mould pattern, and method for producing same |
US11131021B2 (en) | 2013-06-20 | 2021-09-28 | Ev Group E. Thallner Gmbh | Mould with a mould pattern, and device and method for producing same |
Also Published As
Publication number | Publication date |
---|---|
KR20120124476A (en) | 2012-11-13 |
CN102713752A (en) | 2012-10-03 |
EP2531888A1 (en) | 2012-12-12 |
US20120297856A1 (en) | 2012-11-29 |
JP2013518740A (en) | 2013-05-23 |
KR101698838B1 (en) | 2017-01-23 |
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