WO2011050331A3 - Method for passivating a carbonic nanolayer - Google Patents

Method for passivating a carbonic nanolayer Download PDF

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Publication number
WO2011050331A3
WO2011050331A3 PCT/US2010/053861 US2010053861W WO2011050331A3 WO 2011050331 A3 WO2011050331 A3 WO 2011050331A3 US 2010053861 W US2010053861 W US 2010053861W WO 2011050331 A3 WO2011050331 A3 WO 2011050331A3
Authority
WO
WIPO (PCT)
Prior art keywords
carbonic nanolayer
nanolayer
carbonic
passivating
material layers
Prior art date
Application number
PCT/US2010/053861
Other languages
French (fr)
Other versions
WO2011050331A2 (en
Inventor
Thomas Rueckes
H. Montgomery Manning
Rahul Sen
Original Assignee
Nantero, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero, Inc. filed Critical Nantero, Inc.
Publication of WO2011050331A2 publication Critical patent/WO2011050331A2/en
Publication of WO2011050331A3 publication Critical patent/WO2011050331A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube

Abstract

Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.
PCT/US2010/053861 2009-10-23 2010-10-22 Method for passivating a carbonic nanolayer WO2011050331A2 (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US25459609P 2009-10-23 2009-10-23
US25459909P 2009-10-23 2009-10-23
US25458509P 2009-10-23 2009-10-23
US25458809P 2009-10-23 2009-10-23
US61/254,588 2009-10-23
US61/254,585 2009-10-23
US61/254,596 2009-10-23
US61/254,599 2009-10-23

Publications (2)

Publication Number Publication Date
WO2011050331A2 WO2011050331A2 (en) 2011-04-28
WO2011050331A3 true WO2011050331A3 (en) 2011-06-23

Family

ID=43828333

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/053861 WO2011050331A2 (en) 2009-10-23 2010-10-22 Method for passivating a carbonic nanolayer

Country Status (3)

Country Link
US (1) US8551806B2 (en)
TW (1) TWI527753B (en)
WO (1) WO2011050331A2 (en)

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Also Published As

Publication number Publication date
US20110163290A1 (en) 2011-07-07
TWI527753B (en) 2016-04-01
WO2011050331A2 (en) 2011-04-28
TW201139263A (en) 2011-11-16
US8551806B2 (en) 2013-10-08

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