WO2010088338A3 - Rapid cooling of a substrate by motion - Google Patents

Rapid cooling of a substrate by motion Download PDF

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Publication number
WO2010088338A3
WO2010088338A3 PCT/US2010/022338 US2010022338W WO2010088338A3 WO 2010088338 A3 WO2010088338 A3 WO 2010088338A3 US 2010022338 W US2010022338 W US 2010022338W WO 2010088338 A3 WO2010088338 A3 WO 2010088338A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
cooling
moving
distance
motion
Prior art date
Application number
PCT/US2010/022338
Other languages
French (fr)
Other versions
WO2010088338A2 (en
Inventor
Wolfgang Aderhold
Leonid Tertitski
Aaron Hunter
Martin Tran
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2011548280A priority Critical patent/JP2012516576A/en
Priority to CN2010800158689A priority patent/CN102365719A/en
Priority to SG2011050648A priority patent/SG172959A1/en
Publication of WO2010088338A2 publication Critical patent/WO2010088338A2/en
Publication of WO2010088338A3 publication Critical patent/WO2010088338A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

Methods for cooling a substrate are provided herein. In some embodiments, a method for cooling a substrate includes heating a substrate in a process chamber from an introductory temperature to a peak temperature of greater than about 900 degrees Celsius; and cooling the substrate from within about 50 degrees Celsius of the peak temperature by moving the substrate at a rate of at least about 3 millimeters/second in a direction normal to an upper surface of the substrate. In some embodiments, cooling the substrate by moving the substrate further comprises moving the substrate to a first position having a first distance from an upper surface of the process chamber; and subsequently moving the substrate to a second position having a second distance that is further away from the upper surface than the first distance. In some embodiments, a residence time proximate the peak temperature is about 0.6 seconds or less.
PCT/US2010/022338 2009-01-28 2010-01-28 Rapid cooling of a substrate by motion WO2010088338A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011548280A JP2012516576A (en) 2009-01-28 2010-01-28 Rapid cooling of substrate by motion
CN2010800158689A CN102365719A (en) 2009-01-28 2010-01-28 Rapid cooling of a substrate by motion
SG2011050648A SG172959A1 (en) 2009-01-28 2010-01-28 Rapid cooling of a substrate by motion

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14789109P 2009-01-28 2009-01-28
US61/147,891 2009-01-28
US12/694,634 US20100193154A1 (en) 2009-01-28 2010-01-27 Rapid cooling of a substrate by motion
US12/694,634 2010-01-27

Publications (2)

Publication Number Publication Date
WO2010088338A2 WO2010088338A2 (en) 2010-08-05
WO2010088338A3 true WO2010088338A3 (en) 2010-11-18

Family

ID=42396327

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/022338 WO2010088338A2 (en) 2009-01-28 2010-01-28 Rapid cooling of a substrate by motion

Country Status (7)

Country Link
US (1) US20100193154A1 (en)
JP (1) JP2012516576A (en)
KR (1) KR20110108420A (en)
CN (1) CN102365719A (en)
SG (1) SG172959A1 (en)
TW (1) TW201034110A (en)
WO (1) WO2010088338A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245786B2 (en) * 2011-06-02 2016-01-26 Applied Materials, Inc. Apparatus and methods for positioning a substrate using capacitive sensors
US9202730B2 (en) * 2011-11-03 2015-12-01 Applied Materials, Inc. Rapid thermal processing chamber
US8939760B2 (en) * 2012-02-09 2015-01-27 Applied Materials, Inc. Spike anneal residence time reduction in rapid thermal processing chambers
JP6457498B2 (en) * 2013-05-23 2019-01-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Coated liner assembly for a semiconductor processing chamber
CN105706219A (en) * 2013-11-11 2016-06-22 应用材料公司 Low temperature RTP control using IR camera
CN105244262A (en) * 2014-07-09 2016-01-13 中芯国际集成电路制造(上海)有限公司 NiSi last formation process
KR102090152B1 (en) * 2015-12-30 2020-03-17 맷슨 테크놀로지, 인크. Chamber wall heating for millisecond annealing systems
JP6839940B2 (en) * 2016-07-26 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment method
JP6839939B2 (en) * 2016-07-26 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス Heat treatment method
CN106655025B (en) * 2016-12-29 2019-10-29 北京金风科创风电设备有限公司 The drive system of dynamic radiating layout in building enclosure
CN106602482B (en) 2016-12-29 2019-05-03 北京金风科创风电设备有限公司 Dynamic heat dissipating method, the dynamic cooling system of the heat source of building enclosure and its inside
CN110911320B (en) * 2019-12-09 2023-08-18 北京北方华创微电子装备有限公司 Cooling device, control method thereof and semiconductor processing equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154393A (en) * 1997-08-04 1999-02-26 Komatsu Ltd Wafer temperature adjusting equipment and its control method
US20060160253A1 (en) * 2005-01-20 2006-07-20 Bong-Kil Kim Method and apparatus for wafer temperature regulation
US20080141556A1 (en) * 2006-12-14 2008-06-19 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857689A (en) * 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing
JPH07254545A (en) * 1994-03-15 1995-10-03 Oki Electric Ind Co Ltd Heat treatment method for semiconductor substrate and device therefor
JPH0817747A (en) * 1994-06-24 1996-01-19 Tokyo Electron Ltd Processing method and processing device
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
JPH11354516A (en) * 1998-06-08 1999-12-24 Sony Corp Silicon oxide film forming device and method therefor
US6957690B1 (en) * 1998-09-10 2005-10-25 Asm America, Inc. Apparatus for thermal treatment of substrates
JP4625183B2 (en) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド Rapid heating and cooling equipment for semiconductor wafers
US6809035B2 (en) * 2002-08-02 2004-10-26 Wafermasters, Inc. Hot plate annealing
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154393A (en) * 1997-08-04 1999-02-26 Komatsu Ltd Wafer temperature adjusting equipment and its control method
US20060160253A1 (en) * 2005-01-20 2006-07-20 Bong-Kil Kim Method and apparatus for wafer temperature regulation
US20080141556A1 (en) * 2006-12-14 2008-06-19 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane

Also Published As

Publication number Publication date
TW201034110A (en) 2010-09-16
CN102365719A (en) 2012-02-29
KR20110108420A (en) 2011-10-05
US20100193154A1 (en) 2010-08-05
SG172959A1 (en) 2011-08-29
JP2012516576A (en) 2012-07-19
WO2010088338A2 (en) 2010-08-05

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