WO2010042140A3 - Template having alignment marks formed of contrast material - Google Patents

Template having alignment marks formed of contrast material Download PDF

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Publication number
WO2010042140A3
WO2010042140A3 PCT/US2009/002959 US2009002959W WO2010042140A3 WO 2010042140 A3 WO2010042140 A3 WO 2010042140A3 US 2009002959 W US2009002959 W US 2009002959W WO 2010042140 A3 WO2010042140 A3 WO 2010042140A3
Authority
WO
WIPO (PCT)
Prior art keywords
alignment marks
contrast material
template
marks formed
high contrast
Prior art date
Application number
PCT/US2009/002959
Other languages
French (fr)
Other versions
WO2010042140A2 (en
Inventor
Kosta Selinidis
Byung-Jin Choi
Gerard Schmid
Ecron Thompson
Ian M. Mcmackin
Original Assignee
Molecular Imprints, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints, Inc. filed Critical Molecular Imprints, Inc.
Publication of WO2010042140A2 publication Critical patent/WO2010042140A2/en
Publication of WO2010042140A3 publication Critical patent/WO2010042140A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays

Abstract

Imprint lithography substrates may include alignment marks formed of high contrast material. Exemplary methods for forming alignment marks having high contrast material are described.
PCT/US2009/002959 2008-10-10 2009-05-13 Template having alignment marks formed of contrast material WO2010042140A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10430008P 2008-10-10 2008-10-10
US61/104,300 2008-10-10
US12/464,487 US8012395B2 (en) 2006-04-18 2009-05-12 Template having alignment marks formed of contrast material
US12/464,487 2009-05-12

Publications (2)

Publication Number Publication Date
WO2010042140A2 WO2010042140A2 (en) 2010-04-15
WO2010042140A3 true WO2010042140A3 (en) 2010-06-10

Family

ID=40940363

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/002959 WO2010042140A2 (en) 2008-10-10 2009-05-13 Template having alignment marks formed of contrast material

Country Status (2)

Country Link
US (1) US8012395B2 (en)
WO (1) WO2010042140A2 (en)

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US20100092599A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
US8231821B2 (en) * 2008-11-04 2012-07-31 Molecular Imprints, Inc. Substrate alignment
US8432548B2 (en) * 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
NL2005266A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Imprint lithography.
JP5769734B2 (en) * 2010-02-05 2015-08-26 モレキュラー・インプリンツ・インコーポレーテッド Template with high contrast alignment mark
NL2005975A (en) * 2010-03-03 2011-09-06 Asml Netherlands Bv Imprint lithography.
KR101861644B1 (en) * 2010-09-24 2018-05-28 캐논 나노테크놀로지즈 인코퍼레이티드 High contrast alignment marks through multiple stage imprinting
JP6306501B2 (en) * 2011-04-25 2018-04-04 キヤノン ナノテクノロジーズ，インコーポレーテッド Template and method for aligning a template with a substrate
JP5831012B2 (en) * 2011-07-27 2015-12-09 大日本印刷株式会社 Alignment mark for imprint, template provided with the mark, and manufacturing method thereof
JP2014011254A (en) * 2012-06-28 2014-01-20 Dainippon Printing Co Ltd Alignment mark, template with the mark, and manufacturing method of the template
US9377683B2 (en) 2013-03-22 2016-06-28 HGST Netherlands B.V. Imprint template with optically-detectable alignment marks and method for making using block copolymers
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SG11201604509UA (en) * 2013-12-10 2016-07-28 Canon Nanotechnologies Inc Imprint lithography template and method for zero-gap imprinting
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JP2016028442A (en) * 2015-10-08 2016-02-25 大日本印刷株式会社 Template
CN105353592B (en) * 2015-11-25 2018-09-21 武汉新芯集成电路制造有限公司 A kind of photoetching process alignment methods
JP6308281B2 (en) * 2016-10-21 2018-04-11 大日本印刷株式会社 Template manufacturing method
US11194247B2 (en) 2018-01-31 2021-12-07 Canon Kabushiki Kaisha Extrusion control by capillary force reduction
US10921706B2 (en) 2018-06-07 2021-02-16 Canon Kabushiki Kaisha Systems and methods for modifying mesa sidewalls
US10990004B2 (en) 2018-07-18 2021-04-27 Canon Kabushiki Kaisha Photodissociation frame window, systems including a photodissociation frame window, and methods of using a photodissociation frame window
US11728173B2 (en) * 2020-09-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Masking layer with post treatment
US20230205080A1 (en) * 2021-12-27 2023-06-29 Canon Kabushiki Kaisha Template, method of forming a template, apparatus and method of manufacturing an article

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