WO2010042140A2 - Template having alignment marks formed of contrast material - Google Patents
Template having alignment marks formed of contrast material Download PDFInfo
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- WO2010042140A2 WO2010042140A2 PCT/US2009/002959 US2009002959W WO2010042140A2 WO 2010042140 A2 WO2010042140 A2 WO 2010042140A2 US 2009002959 W US2009002959 W US 2009002959W WO 2010042140 A2 WO2010042140 A2 WO 2010042140A2
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- WIPO (PCT)
- Prior art keywords
- substrate
- patterning
- alignment marks
- contrast material
- template
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1838—Diffraction gratings for use with ultraviolet radiation or X-rays
Definitions
- Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller.
- One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
- the semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important.
- Nano- fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed.
- Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like.
- An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S.
- An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
- the substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process.
- the patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate.
- the formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid.
- the template is separated from the rigid layer such that the template and the substrate are spaced apart.
- the substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
- FIG. 1 illustrates a simplified side view of one embodiment of a lithographic system in accordance with the present invention.
- FIG. 2 illustrates a simplified side view of the substrate shown in
- FIG. 1 having a patterned layer positioned thereon.
- FIGS. 3A and 3B illustrate exemplary embodiments of templates having alignment marks.
- FIG. 4 illustrates a simplified elevation view of the template in superimposition with the substrate, both shown in FIG. 1 , showing misalignment along one direction.
- FIG. 5 illustrates a simplified elevation view of the template in superimposition with the substrate, both shown in FIG. 1 , showing misalignment along one direction.
- FIG. 6 illustrates a top down view of the template in superimposition with the substrate, both shown in FIG. 1 , showing misalignment along two transverse directions.
- FIGS. 7A-7E illustrate exemplary embodiments of templates having alignment marks that are visible during an alignment process.
- FIGS. 8A-8K illustrate one embodiment of exemplary template formation having alignment marks that are visible during an alignment process.
- FIGS. 9A and 9B illustrate exemplary embodiments of templates having alignment marks that are visible during an alignment process, the alignment marks having a protective layer.
- FIGS. 10A-1 OH illustrate another embodiment of exemplary template formation.
- FIGS. 11A-11 E, FIGS. 12A-12D and FIGS. 13A-13D illustrate exemplary replication processes to form replica templates having high contrast alignment marks.
- FIG. 14 illustrates a top down view of an alignment mark.
- FIG. 15A illustrates a magnified view of one embodiment of an alignment mark.
- FIG. 15B illustrates a magnified view of another embodiment of an alignment mark, the alignment mark fragmented in a line space pattern.
- FIG. 15C illustrates a magnified view of another embodiment of an alignment mark, the alignment mark fragmented in a square grid pattern.
- FIG. 16 illustrates alignment marks staggered in a lock and key arrangement on an imprint field.
- a lithographic system 10 used to form a relief pattern on a substrate 12.
- Substrate 12 may be coupled to substrate chuck 14.
- substrate chuck 14 is a vacuum chuck.
- Substrate chuck 14, however, may be any chuck including, but not limited to, vacuum, pin-type, groove-type, electromagnetic, and/or the like. Exemplary chucks are described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference.
- Substrate 12 and substrate chuck 14 may be further supported by stage 16.
- Stage 16 may provide motion along the x-, y-, and z-axes.
- Stage 16, substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
- Template 18 generally includes a mesa 20 extending therefrom towards substrate 12, mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.
- Template 18 may be coupled to chuck 28.
- Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
- System 10 may further comprise a fluid dispense system 32.
- Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12.
- Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like.
- Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 22 and substrate 12 depending on design considerations.
- Polymerizable material 34 may comprise a monomer mixture as described in U.S. Patent No. 7,157,036 and U.S. Patent Publication No. 2005/0187339, all of which are hereby incorporated by reference.
- system 10 may further comprise an energy source 38 coupled to direct energy 40 along path 42.
- Imprint head 30 and stage 16 may be configured to position template 18 and substrate 12 in superimposition with path 42.
- System 10 may be regulated by a processor 54 in communication with stage 16, imprint head 30, fluid dispense system 32, and/or source 38, and may operate on a computer readable program stored in memory 56.
- Either imprint head 30, stage 16, or both may vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34.
- imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34.
- source 38 produces energy 40, e.g., broadband ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to shape of a surface 44 of substrate 12 and patterning surface 22, defining a patterned layer 46 on substrate 12.
- Patterned layer 46 may comprise a residual layer 48 and a plurality of features shown as protrusions 50 and recessions 52, with protrusions 50 having thickness
- One manner in which to locate the polymerizable material 34 between template 18 and substrate 12 may be by depositing a plurality of droplets of polymerizable material 34 on the surface of substrate 12. Thereafter, polymerizable material 34 may be concurrently contacted by both template 18 and substrate 12, spreading polymerizable material 34 on the surface of substrate 12. During this process, orientation of template 18 to substrate 12 may become a factor.
- template 18 and/or substrate 12 may include alignment marks 60 to provide suitable orientation. Alignment marks 60 may be formed on patterning surface 22 of template 18 and/or substrate 12 or etched into template 18 and/or substrate 12 as illustrated in FIG. 3B.
- desired alignment between template 18 and substrate 12 occurs upon alignment mark 60 of the template 18 being in superimposition with alignment mark 90 of the substrate 12.
- desired alignment between template 18 and substrate 12 has not occurred, shown by the two marks being offset a distance O.
- offset O is shown as being a linear offset in one direction, it should be understood that the offset may be linear along two directions shown as Oi and O 2 in FIG. 5.
- the offset between template 18 and substrate 12 may also consist of an angular offset, shown in FIG. 6 as angle ⁇ .
- Multiple alignment masks may also have other offsets in combination (e.g., magnification, skew, trapezoidal distortions, and the like).
- the material comprising template 18 may have the same indices of refraction as polymehzable material 34. Even further, the indices of refraction may be in the range of wavelengths used for the alignment process. Alignment marks 60 of template 18 having the same indices of refraction as polymehzable material 34 may cause alignment marks 60 of template 18 to be invisible during the alignment process when in contact with polymehzable material 34. Invisibility of alignment marks 60 of template 18 may hinder the alignment process between template 18 and substrate 12 for patterning of polymehzable material 34. [0034] Isolation of the alignment marks 60 of template 18 and/or substrate
- a moat (not shown) may be etched into template 18 during the pedestal making process to isolate polymerizable material 34 from alignment marks 60.
- Moats, channels, and other similar features are further described in U.S. Serial No. 10/917,761 , U.S. Patent No. 7,077,992, U.S. Patent No. 7,041 ,604, U.S. Patent No. 6,916,584, and U.S. Patent No. 7,252,777, which are hereby incorporated by reference.
- the minimum required space needed for such features may generally be large due to the width of the moat and/or channel, and the distance that may be needed between alignment marks 60 and the edges of mold 20.
- alignment marks 60 may be formed to provide visibility during the alignment process.
- FIGS. 7A-7E illustrate side views of embodiments of template 18a that include alignment marks 60a visible during the alignment process.
- alignment marks 60a may be formed of a high contrast material.
- High contrast materials may include, but are not limited to, tantalum, tantalum nitride, tungsten, silicon carbide, amorphous silicon, chromium, chromium nitride, molybdenum, molybdenum suicide, titanium, titanium nitride, combinations of these materials and/or the like.
- High contrast materials may have an optical density suitable for use in alignment marks 60a when provided at thicknesses less than the thickness of patterned layer 48 (e.g., less than 25 nm) illustrated in FIG. 2.
- a layer of high contrast material in alignment mark 60a may be such that at least a portion of alignment mark 60a resides in polymerizable material 34 during formation of patterned layer 48, and thus alignment mark 60a may not limit proximity of substrate 12 to surface of template 18.
- Alignment marks 60a may be visible during the alignment process with or without the use of a trench or other similar isolation means. Alignment marks 60a may be embedded within mold 20, as illustrated in FIG. 7A, positioned on patterning surface 22a of mold 20, as illustrated by FIG.
- FIGS. 7A-7E illustrate variations of template 18a having visible alignment marks 60a during the patterning process.
- a first portion 61a of alignment marks 60a may be formed of high contrast material while a second portion 63a is substantially absent of high contrast material.
- the first portion may be integral to alignment mark 60a, or as illustrated in FIGS. 7A and 7B, the first portion may be localized.
- the first portion having high contrast material may be localized at patterning surface 22a.
- high contrast material may be used to substantially coat alignment marks 60a.
- high contrast material may be applied throughout template 18b and not localized on alignment marks 60a.
- high contrast material may coat patterning surface 48a of template 18b.
- high contrast material may be integral within template 18b.
- FIGS. 8A-8K illustrate simplified side views of exemplary formation of template 18a having high-contrast alignment marks 60a.
- template 18a may be formed from a multi-layer substrate 64 and comprise mesa 20a having high-contrast alignment marks 60a.
- Contrast material used to form alignment marks 60a may be generally compatible with the imprint process used currently within the industry, and as such, contrast material may be cleaned after imprinting without substantial damage.
- formation of alignment marks 60a may be within the same processing step as formation of features 24a and/or 24b. Formation within the same processing step may reduce overlay alignment error.
- multi-layer substrate 64 may generally comprise a substrate layer 70, a contrast material layer 72, a hard mask layer 74, and resist 76.
- Substrate layer 70 may be formed from materials including, but not limited to, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like.
- Hard mask layer 74 may be formed from materials including, but not limited to, tantalum, tantalum nitride, tungsten, silicon carbide, amorphous silicon, chromium, chromium nitride, molybdenum, molybdenum suicide, titanium, titanium nitride, and/or the like.
- Contrast material layer 72 may be formed from materials including, but not limited to, tantalum, tantalum nitride, tungsten, silicon carbide, amorphous silicon, chromium, chromium nitride, molybdenum, molybdenum suicide, titanium, titanium nitride, combinations of these materials and/or the like. It should be noted contrast material layer 72 may serve a dual purpose in that contrast material layer 72 may provide high contrast material for visibility of alignment mark during patterning of substrate 12 and also serve as a hard mask layer in addition to or in lieu of hard mask layer 74. [0044] Referring to FIG. 8B, contrast material layer 72, hard mask layer
- Multi-layer substrate 64 may be further substantially removed of resist 76 and recoated with resist 78 as shown in FIG. 8C.
- resist 76 may be removed using techniques including, but not limited to, resist strip and solvent wet processes, oxygen ash etch processes, UV ozonated processes, ozonated water, and the like. It should be noted that the multi-layer substrate 64 may be coated with resist 78 without complete removal of resist 76.
- FIG. 8D at least a portion of features 24a and 26a of multi-layer substrate 64 may be exposed, as resist 78 substantially blocks (e.g., masks) processing of alignment marks 60a while the remaining features 24a and 26a are unblocked (e.g., unmasked). It should be noted that the steps shown in FIGS. 8C and 8D may be optional. For example, steps shown in FIGS. 8C and 8D may be used to limit the depth of alignment marks 60a. [0046]
- Features 24a and 26a of multi-layer substrate 64 may be further etched into substrate 70 as illustrated in FIG. 8E. As features 24a and 26a are further etched into substrate 70, resist 78 may substantially block the etch process from altering alignment marks 60a.
- the multi-layered substrate 64 may further be substantially removed of contrast material layer 72 and hard mask layer 74.
- Contrast material layer 72 and/or hard mask layer 74 may be removed using techniques including, but not limited to, wet etching, RIE, ERIE, ICP, plasma etching, dry isotropic etching, and the like.
- chromium based high contrast materials may be removed by wet etching with high selectivity using chromium etchants, such as, for example, Cr7S and Cr9S Chromium based films may also be removed with chlorine and O 2 based plasma processes.
- the removal process may selectively remove contrast material layer 72 and/or hard mask layer 74 with minimal effects on features 24a and/or 26a. Additionally, as multi-layered substrate 64 is removed of contrast material layer 72 and/or hard mask layer 74, resist 78 may substantially block the removal process from altering alignment marks 60a. Protection provided by resist 78 during removal of contrast material layer 72 and/or hard mask layer 74 may provide alignment marks 60a to be independent from depth of the features 24a and 26a. For example, alignment mark 60a may have a depth Di while protrusions 26a may have a depth D 2 , wherein Di ⁇ D 2 . It should be noted that the step shown in FIG. 8F may be optional as contrast material layer 72 and/or hard mask layer 74 may remain over features 24 and 26.
- multi-layer substrate 64 may be further substantially stripped of resist 78. Additionally, hard mask layer 74, shielded by resist 78, may be substantially stripped to expose at least a portion of alignment marks 60a.
- additional processing of multi-layer substrate 64 may provide sidewalls 80a functioning to assist in substantially confining polymerizable material 34 between template 18 and the substrate 12 in the desired volume during polymerization and/or cross-linking as described above (see FIG. 1 ).
- sidewalls 80a may be formed by methods further described in U.S. Patent Application Serial No. 11/762,278, which is hereby incorporated by reference.
- the resulting template 18 comprises mesa 20 having alignment marks 60a formed of contrast material.
- Sidewalls 80a may be formed prior to patterning of alignment marks 60a and/or formed subsequent to patterning of alignment marks 60a.
- sidewalls 80a may be formed prior to patterning of alignment marks 60a such that sidewalls 80a may be formed from a single substrate in contrast to multi-layer substrate 64 which may simplify formation.
- FIGS. 8H-8K illustrates an exemplary process wherein sidewalls
- Multi-layer substrate 64 may be coated with a resist 82 and a hard mask layer 84 as illustrated by FIG. 8H. Portions of resist 82 and hard mask layer 84 are removed such that alignment marks 60a and features 24a and 26a remain substantially shielded by resist 82 and hard mask layer 84 as illustrated by FIG. 8I. During the steps shown in FIGS. 8J-8K, sidewalls 80a may be formed.
- an protective layer 87 may be used to form alignment marks 60b that are visible during the alignment process.
- Protective layer 87 may be localized within alignment mark 60b, or as illustrated in FIGS. 9A and 9B, protective layer 87 may coat alignment marks 60b.
- a first portion 61 b of alignment mark 60b may include high contrast material
- a second portion 63b of alignment mark 60b may be substantially free of high contrast material
- protective layer 87 may coat first portion 61 b and second portion 63b of alignment mark 60b.
- FIG. 10A-10K illustrate simplified side views of another exemplary formation of template 18b from a multi-layered substrate 86b having a protective layer 87 (e.g., oxide layer).
- the resulting template 18b (see FIG. 10H) formed from multi-layer substrate 86b comprises mesa 20b having high-contrast alignment marks 60b. Additionally, formation of alignment marks 60b may be within the same processing step as formation of features 24b and/of 26b. Formation within the same processing step may reduce overlay alignment error.
- multi-layer substrate 86b may comprise a substrate layer 70b, a hard mask layer 74b, and a resist layer 76b, and may be patterned to include features 24b and 26b and/or alignment marks 60b.
- Multilayer substrate 86 may be further substantially stripped of resist 76b as illustrated in FIG. 10B and recoated with protective layer 87 (e.g., oxide layer), as illustrated in FIG. 10C.
- protective layer 87 e.g., oxide layer
- a second resist layer 88b may then be placed to substantially shield alignment marks 60b as illustrated in FIG. 10D.
- Second resist layer 88b may be selectively etched such that a portion of second resist layer 88b protects alignment marks 60b as illustrated in FIG. 10E.
- features 24b and 26b may be further etched into substrate 70.
- hard mask layer 74b may be removed.
- hard mask layer 74b may be removed using techniques including, but not limited to, dry isotropic etching (e.g., xenon diflouride gas), wet etching (e.g., KOH), and the like.
- dry isotropic etching e.g., xenon diflouride gas
- wet etching e.g., KOH
- the multi-layer substrate 86 may be substantially stripped of resist 88 exposing alignment marks 60b to provide template 18b having alignment marks 60b wherein at least a portion of alignment marks 60 may be formed of high contrast material.
- Additional processing of template 18b may provide sidewalls functioning to assist in substantially confining polymerizable material 34 between template 18b and substrate 12 in the desired volume during polymerization and/or cross-linking as described above (see FIG. 1 ).
- sidewalls 80b may be formed by methods further described in U.S. Patent Application Serial No. 11/762,278, which is hereby incorporated by reference. It should be noted sidewalls may be formed prior to formation of features 24b and 26b and/or alignment marks 60b or sidewalls may be formed subsequent to formation of features 24b and 26b and/or alignment marks 60b.
- Alignment marks having high contrast material may also be formed during replica patterning of device to have substantially the same pattern as a master template. Forming master templates using e-beam lithography or other methods may be time consuming and expensive. As such, replicas of the master template may be used as working templates.
- FIGS. 11A-11 E, FIGS. 12A-12D and FIGS. 13A-13D illustrate exemplary replication processes to form replica templates 18d from master template 18c. Replica templates 18d include high contrast alignment marks 60c.
- any standard photomask process may be used to create master template 18c including, but not limited to, variable shaped electron beam, Gaussian electron beam, laser writing and other similar processes. Master template 18c may then be used to form features 24c and 26c, as well as alignment marks 60c within substrate 12c as illustrated in FIG. 11 A.
- imprint lithography techniques such as those described herein, may be used to form features 24c and 26c, as well as alignment marks 60c within substrate 12c.
- Substrate 12c may include substrate layer 70c, resist layer 76c and a temporary hard mask layer 74c.
- Hard mask layer 74c may be used to improve resist exposure and etch pattern transfer depending on design considerations. It should be noted, and as described in detail above, hard mask layer 74c may be formed of high contrast material. Alternatively, a separate high contrast material layer may be used in conjunction with hard mask layer 74c to form replica template 18d.
- features 24c and 26c and/or alignment marks 60c may be further etched in hard mask layer 74c and/or substrate layer 70c. Portions of hard mask layer 74c may removed, as illustrated in FIG. 11C, and features 24c and 26c and/or alignment marks 60c further etched into substrate layer 70c. Resist may be removed to form replica template 18d having alignment marks 60c with at least a portion of alignment marks 60c being formed of high contrast material.
- Replica template 18d may be further processed localizing high contrast material.
- replica template 18d may be further processed such that only alignment marks 60c include high contrast material.
- FIGS. 12A- 12D illustrate an exemplary process for localizing high contrast material in alignment marks 60c.
- a second resist layer 88c may be positioned (e.g., imprinted) on replica template 18d.
- Second resist layer 88c may include one or more alignment blocks 91.
- Alignment blocks 91 may be positioned in superimposition with alignment marks 60c to substantially block removal of high contrast material from alignment marks 60 during etching and/or stripping.
- second resist layer 88c may be stripped exposing at least a portion of hard mask layer 74c of features 26c. Etching may remove a first portion of hard mask layer 74c as illustrated in FIG. 12C while alignment blocks 91 may block etching of at least a second portion of hard mask layer 74c. For example, alignment blocks 91 may block alignment marks 60c from having hard mask layer 74c removed. Resist layer 88c may then be removed providing replica template 18d having high contrast material localized in alignment marks 60c.
- FIGS. 13A-13D illustrate another exemplary process for localizing high contrast material in alignment marks 60c of template 18d.
- a second resist layer 88d may be may be positioned on replica template 18d using techniques such as spin-coating. Second resist layer 88d may be developed to form alignment blocks 91a that substantially block alignment marks 60c from further processing.
- hard mask layer 74c may be stripped while alignment blocks 91a substantially block stripping of hard mask layer 74c of alignment marks 60c. Resist layer 88d may then be removed providing replica template 18d having high contrast material localized in alignment marks 60c.
- Alignment marks 60a and/or 60b formed of contrast material may provide enough visibility to perform alignment even in the presence of polymerizable material 34. Additionally, as illustrated in FIG. 14 and FIGS. 15A and 15B, features 92 may be altered in an effort to pass more UV wavelength, while providing longer wavelengths of energy used for alignment to be absorbed, reflected, and/or diffracted. For example, as illustrated in FIG. 14 and more particularly in FIG. 15A, alignment marks 60a may generally have features 92 around 1 ⁇ m in width. These features 92 may be fragmented into small repeating sub-features 94 ranging in size from 50 nm to 200 nm. Fragmentation of alignment marks 60a may reduce the contact area of the contrast material to polymerizable material 34 (see FIG. 1 ) during curing.
- FIGS. 15B and 15C illustrate two embodiments of alignment marks
- features 92a of alignment mark 60a are fragmented by line space to provide repeating line sub-features 94 ranging in size from 50 nm to 200 nm.
- features 92b of alignment mark 60b are fragmented in square grid pattern sub-features 94 providing repeating squares ranging in size from 50 nm to 200 nm.
- Space allocation for alignment marks 60 may be further reduced by staggering alignment marks 60.
- alignments marks 60 are staggered in a lock and key arrangement on an imprint field 96.
- the staggered layout on the imprint field 96 may utilize the same horizontal scribe spacing for alignment marks 60 placed in the top and bottom perimeter edges of the field 96.
- the same vertical scribe spacing may be used for the alignment marks 60 placed in the left and right perimeter edges of the field 96.
- the staggered layout reduces the scribe width while maintaining alignment marks 60 in each of the four corners 98a, 98b, 98c, and 98d of each section 100a-100d of the imprint field 96.
- alignment marks 60 in corners 98b and 98d of section 100a align in a lock and key arrangement with alignment marks 60 in corners 98a and 98c of section 100b.
- alignment marks 60 in corners 98c and 98d of section 100a align in a lock and key arrangement with alignment marks 60 in corners 98a and 98b of section 100c.
- the staggered layout on the imprint field 96 may include the use of alignment marks 60 formed of contrast material. Additionally, or in lieu of the high-contrast material, the staggered layout on the imprint field 96 may include the use of moats as described in U.S. Patent Application Serial No. 10/917,761 , which is hereby incorporated by reference.
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Abstract
Imprint lithography substrates may include alignment marks formed of high contrast material. Exemplary methods for forming alignment marks having high contrast material are described.
Description
TEMPLATE HAVING ALIGNMENT MARKS FORMED OF CONTRAST MATERIAL
CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims the benefit under 35 U.S.C. § 119(e)(1 ) of
U.S. Provisional No. 61/104,300, filed October 10, 2008, which is hereby incorporated by reference. This application claims the benefit of U.S. Application Serial No. 12/464,487 filed May 12, 2009, which is hereby incorporated by reference.
BACKGROUND INFORMATION
[0002] Nano-fabrication includes the fabrication of very small structures that have features on the order of 100 nanometers or smaller. One application in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits. The semiconductor processing industry continues to strive for larger production yields while increasing the circuits per unit area formed on a substrate, therefore nano-fabrication becomes increasingly important. Nano- fabrication provides greater process control while allowing continued reduction of the minimum feature dimensions of the structures formed. Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems, and the like. [0003] An exemplary nano-fabrication technique in use today is commonly referred to as imprint lithography. Exemplary imprint lithography processes are described in detail in numerous publications, such as U.S. Patent Publication No. 2004/0065976, U.S. Patent Publication No. 2004/0065252, and U.S. Patent No. 6,936,194, all of which are hereby incorporated by reference.
[0004] An imprint lithography technique disclosed in each of the aforementioned U.S. patent publications and patent, includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate. The substrate may be coupled to a motion stage to obtain a desired positioning to facilitate the patterning process. The patterning process uses a template spaced apart from the substrate and a formable liquid applied between the template and the substrate. The formable liquid is solidified to form a rigid layer that has a pattern conforming to a shape of the surface of the template that contacts the formable liquid. After solidification, the template is separated from the rigid layer such that the template and the substrate are spaced apart. The substrate and the solidified layer are then subjected to additional processes to transfer a relief image into the substrate that corresponds to the pattern in the solidified layer.
BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS [0005] So that the present invention may be understood in more detail, a description of embodiments of the invention is provided with reference to the embodiments illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the invention, and are therefore not to be considered limiting of the scope. [0006] FIG. 1 illustrates a simplified side view of one embodiment of a lithographic system in accordance with the present invention.
[0007] FIG. 2 illustrates a simplified side view of the substrate shown in
FIG. 1 having a patterned layer positioned thereon.
[0008] FIGS. 3A and 3B illustrate exemplary embodiments of templates having alignment marks.
[0009] FIG. 4 illustrates a simplified elevation view of the template in superimposition with the substrate, both shown in FIG. 1 , showing misalignment along one direction.
[0010] FIG. 5 illustrates a simplified elevation view of the template in superimposition with the substrate, both shown in FIG. 1 , showing misalignment along one direction.
[0011] FIG. 6 illustrates a top down view of the template in superimposition with the substrate, both shown in FIG. 1 , showing misalignment along two transverse directions.
[0012] FIGS. 7A-7E illustrate exemplary embodiments of templates having alignment marks that are visible during an alignment process.
[0013] FIGS. 8A-8K illustrate one embodiment of exemplary template formation having alignment marks that are visible during an alignment process.
[0014] FIGS. 9A and 9B illustrate exemplary embodiments of templates having alignment marks that are visible during an alignment process, the alignment marks having a protective layer.
[0015] FIGS. 10A-1 OH illustrate another embodiment of exemplary template formation.
[0016] FIGS. 11A-11 E, FIGS. 12A-12D and FIGS. 13A-13D illustrate exemplary replication processes to form replica templates having high contrast alignment marks.
[0017] FIG. 14 illustrates a top down view of an alignment mark.
[0018] FIG. 15A illustrates a magnified view of one embodiment of an alignment mark.
[0019] FIG. 15B illustrates a magnified view of another embodiment of an alignment mark, the alignment mark fragmented in a line space pattern.
[0020] FIG. 15C illustrates a magnified view of another embodiment of an alignment mark, the alignment mark fragmented in a square grid pattern.
[0021] FIG. 16 illustrates alignment marks staggered in a lock and key arrangement on an imprint field.
DETAILED DESCRIPTION
[0022] Referring to the figures, and particularly to FIG. 1 , illustrated therein is a lithographic system 10 used to form a relief pattern on a substrate 12. Substrate 12 may be coupled to substrate chuck 14. As illustrated, substrate chuck 14 is a vacuum chuck. Substrate chuck 14, however, may be any chuck including, but not limited to, vacuum, pin-type, groove-type, electromagnetic, and/or the like. Exemplary chucks are described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference.
[0023] Substrate 12 and substrate chuck 14 may be further supported by stage 16. Stage 16 may provide motion along the x-, y-, and z-axes. Stage 16,
substrate 12, and substrate chuck 14 may also be positioned on a base (not shown).
[0024] Spaced-apart from substrate 12 is a template 18. Template 18 generally includes a mesa 20 extending therefrom towards substrate 12, mesa 20 having a patterning surface 22 thereon. Further, mesa 20 may be referred to as mold 20. Template 18 and/or mold 20 may be formed from such materials including, but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. As illustrated, patterning surface 22 comprises features defined by a plurality of spaced-apart recesses 24 and/or protrusions 26, though embodiments of the present invention are not limited to such configurations. Patterning surface 22 may define any original pattern that forms the basis of a pattern to be formed on substrate 12.
[0025] Template 18 may be coupled to chuck 28. Chuck 28 may be configured as, but not limited to, vacuum, pin-type, groove-type, electromagnetic, and/or other similar chuck types. Exemplary chucks are further described in U.S. Patent No. 6,873,087, which is hereby incorporated by reference. Further, chuck 28 may be coupled to imprint head 30 such that chuck 28 and/or imprint head 30 may be configured to facilitate movement of template 18.
[0026] System 10 may further comprise a fluid dispense system 32. Fluid dispense system 32 may be used to deposit polymerizable material 34 on substrate 12. Polymerizable material 34 may be positioned upon substrate 12 using techniques such as drop dispense, spin-coating, dip coating, chemical
vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and/or the like. Polymerizable material 34 may be disposed upon substrate 12 before and/or after a desired volume is defined between mold 22 and substrate 12 depending on design considerations. Polymerizable material 34 may comprise a monomer mixture as described in U.S. Patent No. 7,157,036 and U.S. Patent Publication No. 2005/0187339, all of which are hereby incorporated by reference.
[0027] Referring to FIGS. 1 and 2, system 10 may further comprise an energy source 38 coupled to direct energy 40 along path 42. Imprint head 30 and stage 16 may be configured to position template 18 and substrate 12 in superimposition with path 42. System 10 may be regulated by a processor 54 in communication with stage 16, imprint head 30, fluid dispense system 32, and/or source 38, and may operate on a computer readable program stored in memory 56.
[0028] Either imprint head 30, stage 16, or both may vary a distance between mold 20 and substrate 12 to define a desired volume therebetween that is filled by polymerizable material 34. For example, imprint head 30 may apply a force to template 18 such that mold 20 contacts polymerizable material 34. After the desired volume is filled with polymerizable material 34, source 38 produces energy 40, e.g., broadband ultraviolet radiation, causing polymerizable material 34 to solidify and/or cross-link conforming to shape of a surface 44 of substrate 12 and patterning surface 22, defining a patterned layer 46 on substrate 12. Patterned layer 46 may comprise a residual layer 48 and a plurality of features
shown as protrusions 50 and recessions 52, with protrusions 50 having thickness
U and residual layer having a thickness t2.
[0029] The above-mentioned system and process may be further employed in imprint lithography processes and systems referred to in U.S. Patent
No. 6,932,934, U.S. Patent Publication No. 2004/0124566, U.S. Patent
Publication No. 2004/0188381 , and U.S. Patent Publication No. 2004/0211754, each of which is hereby incorporated by reference.
[0030] One manner in which to locate the polymerizable material 34 between template 18 and substrate 12 may be by depositing a plurality of droplets of polymerizable material 34 on the surface of substrate 12. Thereafter, polymerizable material 34 may be concurrently contacted by both template 18 and substrate 12, spreading polymerizable material 34 on the surface of substrate 12. During this process, orientation of template 18 to substrate 12 may become a factor.
[0031] Referring to FIG. 3, template 18 and/or substrate 12 may include alignment marks 60 to provide suitable orientation. Alignment marks 60 may be formed on patterning surface 22 of template 18 and/or substrate 12 or etched into template 18 and/or substrate 12 as illustrated in FIG. 3B.
[0032] Referring to FIG. 4, it is assumed that desired alignment between template 18 and substrate 12 occurs upon alignment mark 60 of the template 18 being in superimposition with alignment mark 90 of the substrate 12. For example, in FIG. 4, desired alignment between template 18 and substrate 12 has not occurred, shown by the two marks being offset a distance O. Further,
although offset O is shown as being a linear offset in one direction, it should be understood that the offset may be linear along two directions shown as Oi and O2 in FIG. 5. In addition to, or instead of, the aforementioned linear offset in one or two directions, the offset between template 18 and substrate 12 may also consist of an angular offset, shown in FIG. 6 as angle Θ. Multiple alignment masks may also have other offsets in combination (e.g., magnification, skew, trapezoidal distortions, and the like).
[0033] The material comprising template 18 may have the same indices of refraction as polymehzable material 34. Even further, the indices of refraction may be in the range of wavelengths used for the alignment process. Alignment marks 60 of template 18 having the same indices of refraction as polymehzable material 34 may cause alignment marks 60 of template 18 to be invisible during the alignment process when in contact with polymehzable material 34. Invisibility of alignment marks 60 of template 18 may hinder the alignment process between template 18 and substrate 12 for patterning of polymehzable material 34. [0034] Isolation of the alignment marks 60 of template 18 and/or substrate
12 from polymehzable material 34 may facilitate visibility during the alignment process. For example, a moat (not shown) may be etched into template 18 during the pedestal making process to isolate polymerizable material 34 from alignment marks 60. Moats, channels, and other similar features are further described in U.S. Serial No. 10/917,761 , U.S. Patent No. 7,077,992, U.S. Patent No. 7,041 ,604, U.S. Patent No. 6,916,584, and U.S. Patent No. 7,252,777, which are hereby incorporated by reference. The minimum required space needed for
such features, however, may generally be large due to the width of the moat and/or channel, and the distance that may be needed between alignment marks 60 and the edges of mold 20.
[0035] Instead of isolating alignment marks 60 from polymerizable material
34, alignment marks 60 may be formed to provide visibility during the alignment process. For simplicity in description, the following describes formation and use of template alignment marks, however, as one skilled in art would recognize, alignment marks having characteristics and formations as described herein may be provided in substrate 12. FIGS. 7A-7E illustrate side views of embodiments of template 18a that include alignment marks 60a visible during the alignment process. Generally, alignment marks 60a may be formed of a high contrast material. High contrast materials may include, but are not limited to, tantalum, tantalum nitride, tungsten, silicon carbide, amorphous silicon, chromium, chromium nitride, molybdenum, molybdenum suicide, titanium, titanium nitride, combinations of these materials and/or the like.
[0036] High contrast materials may have an optical density suitable for use in alignment marks 60a when provided at thicknesses less than the thickness of patterned layer 48 (e.g., less than 25 nm) illustrated in FIG. 2. For example, a layer of high contrast material in alignment mark 60a may be such that at least a portion of alignment mark 60a resides in polymerizable material 34 during formation of patterned layer 48, and thus alignment mark 60a may not limit proximity of substrate 12 to surface of template 18.
[0037] Alignment marks 60a may be visible during the alignment process with or without the use of a trench or other similar isolation means. Alignment marks 60a may be embedded within mold 20, as illustrated in FIG. 7A, positioned on patterning surface 22a of mold 20, as illustrated by FIG. 7C, or a combination of both on patterning surface 22a and imbedded within mold 20. [0038] FIGS. 7A-7E illustrate variations of template 18a having visible alignment marks 60a during the patterning process. For example, in FIGS. 7A and 7B, a first portion 61a of alignment marks 60a may be formed of high contrast material while a second portion 63a is substantially absent of high contrast material. The first portion may be integral to alignment mark 60a, or as illustrated in FIGS. 7A and 7B, the first portion may be localized. For example, as illustrated in FIG. 7A, the first portion having high contrast material may be localized at patterning surface 22a. Alternatively, as illustrated in FIG. 7E, high contrast material may be used to substantially coat alignment marks 60a. [0039] As illustrated in FIGS. 7B and 7C, high contrast material may be applied throughout template 18b and not localized on alignment marks 60a. For example, high contrast material may coat patterning surface 48a of template 18b. Alternatively, high contrast material may be integral within template 18b. [0040] FIGS. 8A-8K illustrate simplified side views of exemplary formation of template 18a having high-contrast alignment marks 60a. For example, template 18a may be formed from a multi-layer substrate 64 and comprise mesa 20a having high-contrast alignment marks 60a. Contrast material used to form alignment marks 60a may be generally compatible with the imprint process used
currently within the industry, and as such, contrast material may be cleaned after imprinting without substantial damage. Additionally, formation of alignment marks 60a may be within the same processing step as formation of features 24a and/or 24b. Formation within the same processing step may reduce overlay alignment error.
[0041] As illustrated in FIG. 8A, multi-layer substrate 64 may generally comprise a substrate layer 70, a contrast material layer 72, a hard mask layer 74, and resist 76. Substrate layer 70 may be formed from materials including, but not limited to, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, hardened sapphire, and/or the like. [0042] Hard mask layer 74 may be formed from materials including, but not limited to, tantalum, tantalum nitride, tungsten, silicon carbide, amorphous silicon, chromium, chromium nitride, molybdenum, molybdenum suicide, titanium, titanium nitride, and/or the like.
[0043] Contrast material layer 72 may be formed from materials including, but not limited to, tantalum, tantalum nitride, tungsten, silicon carbide, amorphous silicon, chromium, chromium nitride, molybdenum, molybdenum suicide, titanium, titanium nitride, combinations of these materials and/or the like. It should be noted contrast material layer 72 may serve a dual purpose in that contrast material layer 72 may provide high contrast material for visibility of alignment mark during patterning of substrate 12 and also serve as a hard mask layer in addition to or in lieu of hard mask layer 74.
[0044] Referring to FIG. 8B, contrast material layer 72, hard mask layer
74, and resist 76 may be patterned to include primary features (e.g., recessions 24a and protrusions 26a) and/or alignment marks 60a. Multi-layer substrate 64 may be further substantially removed of resist 76 and recoated with resist 78 as shown in FIG. 8C. For example, resist 76 may be removed using techniques including, but not limited to, resist strip and solvent wet processes, oxygen ash etch processes, UV ozonated processes, ozonated water, and the like. It should be noted that the multi-layer substrate 64 may be coated with resist 78 without complete removal of resist 76.
[0045] Referring to FIG. 8D, at least a portion of features 24a and 26a of multi-layer substrate 64 may be exposed, as resist 78 substantially blocks (e.g., masks) processing of alignment marks 60a while the remaining features 24a and 26a are unblocked (e.g., unmasked). It should be noted that the steps shown in FIGS. 8C and 8D may be optional. For example, steps shown in FIGS. 8C and 8D may be used to limit the depth of alignment marks 60a. [0046] Features 24a and 26a of multi-layer substrate 64 may be further etched into substrate 70 as illustrated in FIG. 8E. As features 24a and 26a are further etched into substrate 70, resist 78 may substantially block the etch process from altering alignment marks 60a.
[0047] As illustrated in FIG. 8F, the multi-layered substrate 64 may further be substantially removed of contrast material layer 72 and hard mask layer 74. Contrast material layer 72 and/or hard mask layer 74 may be removed using techniques including, but not limited to, wet etching, RIE, ERIE, ICP, plasma
etching, dry isotropic etching, and the like. For example, chromium based high contrast materials may be removed by wet etching with high selectivity using chromium etchants, such as, for example, Cr7S and Cr9S Chromium based films may also be removed with chlorine and O2 based plasma processes. [0048] The removal process may selectively remove contrast material layer 72 and/or hard mask layer 74 with minimal effects on features 24a and/or 26a. Additionally, as multi-layered substrate 64 is removed of contrast material layer 72 and/or hard mask layer 74, resist 78 may substantially block the removal process from altering alignment marks 60a. Protection provided by resist 78 during removal of contrast material layer 72 and/or hard mask layer 74 may provide alignment marks 60a to be independent from depth of the features 24a and 26a. For example, alignment mark 60a may have a depth Di while protrusions 26a may have a depth D2, wherein Di ≠D2. It should be noted that the step shown in FIG. 8F may be optional as contrast material layer 72 and/or hard mask layer 74 may remain over features 24 and 26.
[0049] As illustrated in FIG. 8G, multi-layer substrate 64 may be further substantially stripped of resist 78. Additionally, hard mask layer 74, shielded by resist 78, may be substantially stripped to expose at least a portion of alignment marks 60a.
[0050] As illustrated in FIGS. 8H-8K, additional processing of multi-layer substrate 64 may provide sidewalls 80a functioning to assist in substantially confining polymerizable material 34 between template 18 and the substrate 12 in the desired volume during polymerization and/or cross-linking as described
above (see FIG. 1 ). For example, sidewalls 80a may be formed by methods further described in U.S. Patent Application Serial No. 11/762,278, which is hereby incorporated by reference. The resulting template 18 comprises mesa 20 having alignment marks 60a formed of contrast material. Sidewalls 80a may be formed prior to patterning of alignment marks 60a and/or formed subsequent to patterning of alignment marks 60a. For example, sidewalls 80a may be formed prior to patterning of alignment marks 60a such that sidewalls 80a may be formed from a single substrate in contrast to multi-layer substrate 64 which may simplify formation.
[0051] FIGS. 8H-8K illustrates an exemplary process wherein sidewalls
80a may be formed in multi-layer substrate 64 subsequent to patterning of alignment marks 60a. Multi-layer substrate 64 may be coated with a resist 82 and a hard mask layer 84 as illustrated by FIG. 8H. Portions of resist 82 and hard mask layer 84 are removed such that alignment marks 60a and features 24a and 26a remain substantially shielded by resist 82 and hard mask layer 84 as illustrated by FIG. 8I. During the steps shown in FIGS. 8J-8K, sidewalls 80a may be formed.
[0052] Referring to FIGS. 9A and 9B, an protective layer 87 may be used to form alignment marks 60b that are visible during the alignment process. Protective layer 87 may be localized within alignment mark 60b, or as illustrated in FIGS. 9A and 9B, protective layer 87 may coat alignment marks 60b. For example, in FIG. 9A, a first portion 61 b of alignment mark 60b may include high contrast material, a second portion 63b of alignment mark 60b may be
substantially free of high contrast material, and protective layer 87 may coat first portion 61 b and second portion 63b of alignment mark 60b. [0053] FIGS. 10A-10K illustrate simplified side views of another exemplary formation of template 18b from a multi-layered substrate 86b having a protective layer 87 (e.g., oxide layer). The resulting template 18b (see FIG. 10H) formed from multi-layer substrate 86b comprises mesa 20b having high-contrast alignment marks 60b. Additionally, formation of alignment marks 60b may be within the same processing step as formation of features 24b and/of 26b. Formation within the same processing step may reduce overlay alignment error. [0054] As illustrated in FIG. 10A, multi-layer substrate 86b may comprise a substrate layer 70b, a hard mask layer 74b, and a resist layer 76b, and may be patterned to include features 24b and 26b and/or alignment marks 60b. Multilayer substrate 86 may be further substantially stripped of resist 76b as illustrated in FIG. 10B and recoated with protective layer 87 (e.g., oxide layer), as illustrated in FIG. 10C. A second resist layer 88b may then be placed to substantially shield alignment marks 60b as illustrated in FIG. 10D. Second resist layer 88b may be selectively etched such that a portion of second resist layer 88b protects alignment marks 60b as illustrated in FIG. 10E.
[0055] As illustrated in FIG. 10F, features 24b and 26b may be further etched into substrate 70. As illustrated in FIG. 10G, hard mask layer 74b may be removed. For example, hard mask layer 74b may be removed using techniques including, but not limited to, dry isotropic etching (e.g., xenon diflouride gas), wet etching (e.g., KOH), and the like.
[0056] As illustrated in FIG. 10H1 the multi-layer substrate 86 may be substantially stripped of resist 88 exposing alignment marks 60b to provide template 18b having alignment marks 60b wherein at least a portion of alignment marks 60 may be formed of high contrast material.
[0057] Additional processing of template 18b may provide sidewalls functioning to assist in substantially confining polymerizable material 34 between template 18b and substrate 12 in the desired volume during polymerization and/or cross-linking as described above (see FIG. 1 ). For example, sidewalls 80b may be formed by methods further described in U.S. Patent Application Serial No. 11/762,278, which is hereby incorporated by reference. It should be noted sidewalls may be formed prior to formation of features 24b and 26b and/or alignment marks 60b or sidewalls may be formed subsequent to formation of features 24b and 26b and/or alignment marks 60b.
[0058] Alignment marks having high contrast material may also be formed during replica patterning of device to have substantially the same pattern as a master template. Forming master templates using e-beam lithography or other methods may be time consuming and expensive. As such, replicas of the master template may be used as working templates. FIGS. 11A-11 E, FIGS. 12A-12D and FIGS. 13A-13D illustrate exemplary replication processes to form replica templates 18d from master template 18c. Replica templates 18d include high contrast alignment marks 60c.
[0059] For example, as illustrated in FIGS. 11A-11 E, any standard photomask process may be used to create master template 18c including, but
not limited to, variable shaped electron beam, Gaussian electron beam, laser writing and other similar processes. Master template 18c may then be used to form features 24c and 26c, as well as alignment marks 60c within substrate 12c as illustrated in FIG. 11 A. For example, imprint lithography techniques, such as those described herein, may be used to form features 24c and 26c, as well as alignment marks 60c within substrate 12c.
[0060] Substrate 12c may include substrate layer 70c, resist layer 76c and a temporary hard mask layer 74c. Hard mask layer 74c may be used to improve resist exposure and etch pattern transfer depending on design considerations. It should be noted, and as described in detail above, hard mask layer 74c may be formed of high contrast material. Alternatively, a separate high contrast material layer may be used in conjunction with hard mask layer 74c to form replica template 18d.
[0061] As illustrated in FIG. 11 B, features 24c and 26c and/or alignment marks 60c may be further etched in hard mask layer 74c and/or substrate layer 70c. Portions of hard mask layer 74c may removed, as illustrated in FIG. 11C, and features 24c and 26c and/or alignment marks 60c further etched into substrate layer 70c. Resist may be removed to form replica template 18d having alignment marks 60c with at least a portion of alignment marks 60c being formed of high contrast material.
[0062] Replica template 18d may be further processed localizing high contrast material. For example, replica template 18d may be further processed such that only alignment marks 60c include high contrast material. FIGS. 12A-
12D illustrate an exemplary process for localizing high contrast material in alignment marks 60c.
[0063] As illustrated in FIG. 12A, a second resist layer 88c may be positioned (e.g., imprinted) on replica template 18d. Second resist layer 88c may include one or more alignment blocks 91. Alignment blocks 91 may be positioned in superimposition with alignment marks 60c to substantially block removal of high contrast material from alignment marks 60 during etching and/or stripping.
[0064] Referring to FIG. 12B, second resist layer 88c may be stripped exposing at least a portion of hard mask layer 74c of features 26c. Etching may remove a first portion of hard mask layer 74c as illustrated in FIG. 12C while alignment blocks 91 may block etching of at least a second portion of hard mask layer 74c. For example, alignment blocks 91 may block alignment marks 60c from having hard mask layer 74c removed. Resist layer 88c may then be removed providing replica template 18d having high contrast material localized in alignment marks 60c.
[0065] FIGS. 13A-13D illustrate another exemplary process for localizing high contrast material in alignment marks 60c of template 18d. As illustrated in FIG. 13A, a second resist layer 88d may be may be positioned on replica template 18d using techniques such as spin-coating. Second resist layer 88d may be developed to form alignment blocks 91a that substantially block alignment marks 60c from further processing. As illustrated in FIG. 13C, hard mask layer 74c may be stripped while alignment blocks 91a substantially block
stripping of hard mask layer 74c of alignment marks 60c. Resist layer 88d may then be removed providing replica template 18d having high contrast material localized in alignment marks 60c.
[0066] Alignment marks 60a and/or 60b formed of contrast material may provide enough visibility to perform alignment even in the presence of polymerizable material 34. Additionally, as illustrated in FIG. 14 and FIGS. 15A and 15B, features 92 may be altered in an effort to pass more UV wavelength, while providing longer wavelengths of energy used for alignment to be absorbed, reflected, and/or diffracted. For example, as illustrated in FIG. 14 and more particularly in FIG. 15A, alignment marks 60a may generally have features 92 around 1 μm in width. These features 92 may be fragmented into small repeating sub-features 94 ranging in size from 50 nm to 200 nm. Fragmentation of alignment marks 60a may reduce the contact area of the contrast material to polymerizable material 34 (see FIG. 1 ) during curing.
[0067] FIGS. 15B and 15C illustrate two embodiments of alignment marks
60a and 60b having altered pitch. In FIG. 15B, features 92a of alignment mark 60a are fragmented by line space to provide repeating line sub-features 94 ranging in size from 50 nm to 200 nm. In FIG. 15C, features 92b of alignment mark 60b are fragmented in square grid pattern sub-features 94 providing repeating squares ranging in size from 50 nm to 200 nm.
[0068] Space allocation for alignment marks 60 may be further reduced by staggering alignment marks 60. For example, as illustrated in FIG. 16, alignments marks 60 are staggered in a lock and key arrangement on an imprint
field 96. The staggered layout on the imprint field 96 may utilize the same horizontal scribe spacing for alignment marks 60 placed in the top and bottom perimeter edges of the field 96. Similarly, the same vertical scribe spacing may be used for the alignment marks 60 placed in the left and right perimeter edges of the field 96. The staggered layout reduces the scribe width while maintaining alignment marks 60 in each of the four corners 98a, 98b, 98c, and 98d of each section 100a-100d of the imprint field 96. For example, alignment marks 60 in corners 98b and 98d of section 100a align in a lock and key arrangement with alignment marks 60 in corners 98a and 98c of section 100b. In a related matter, alignment marks 60 in corners 98c and 98d of section 100a align in a lock and key arrangement with alignment marks 60 in corners 98a and 98b of section 100c.
[0069] The staggered layout on the imprint field 96 may include the use of alignment marks 60 formed of contrast material. Additionally, or in lieu of the high-contrast material, the staggered layout on the imprint field 96 may include the use of moats as described in U.S. Patent Application Serial No. 10/917,761 , which is hereby incorporated by reference.
Claims
1. A method of patterning a substrate using nano-lithographic processes, comprising: patterning a first portion of the substrate with a plurality of recessions and a plurality of protrusions; patterning a second portion of the substrate with at least one alignment mark, at least a portion of the alignment mark being formed of high contrast material; wherein the first portion of the substrate and the second portion of the substrate are patterned within the same nano-lithographic process step.
2. The method of claim 1 , wherein an etch depth of the first portion of the substrate is independent of an etch depth of the second portion of the substrate.
3. The method of any one of claims 1 or 2, wherein patterning of the first portion of the substrate further includes applying a resist layer in superimposition with the second portion of the substrate such that the etch depth of the first portion of the substrate is independent of the etch depth of the second portion of the substrate.
4. The method of any one of claims 1-3, wherein the alignment mark includes a protective layer positioned adjacent to the high contrast material.
5. The method of claim 4, wherein the protective layer is an oxide layer.
6. The method of any one of claims 1-5, wherein the substrate includes the high contrast material and patterning of the second portion includes etching of substrate including the high contrast material to form the alignment mark.
7. The method of claim 6, wherein the substrate further includes a hard mask layer.
8. The method of any one of claims 1-5, wherein the patterning of the second portion includes depositing high contrast material on the alignment mark.
9. The method of any one of claims 1-8, further comprising patterning a sidewall on the substrate.
10. The method of claim 9, wherein the sidewall is patterned on the substrate prior to patterning of the first portion of the substrate.
11. The method of claim 9, wherein the sidewall is patterned on the substrate subsequent to patterning of the first portion of the substrate.
12. The method of any one of claims 1-11 , wherein the alignment marks are fragmented.
13. The method of claim 12, wherein the alignment marks are fragmented by line space.
14. The method of claim 12, wherein the alignment marks are fragmented in a square grid pattern.
15. The method of any one of claims 1-14, wherein formation of the alignment marks are staggered in a lock and key arrangement on an imprint field.
16. The method of any one of claims 1-15, wherein the first portion of the substrate and the second portion of the substrate are patterned to form a replica template.
17. The method of any one of claims 1-16, wherein the substrate is a nano- lithographic template.
18. The method of any one of claims 1-17, wherein at least a portion of the protrusions include high contrast material.
19. A method of forming a nano-lithography template, comprising: patterning a first portion of a substrate with a plurality of recessions and a plurality of protrusions, at least a portion of the substrate formed of high contrast material; patterning a second portion of the substrate with at least one alignment mark, wherein the first portion of the substrate and the second portion of the substrate are patterned within the same nano-lithographic patterning step; positioning alignment blocks in superimposition with the alignment mark; removing high contrast material from the first portion of the substrate; removing alignment blocks to form the nano-lithographic template, wherein the high contrast material is localized in the alignment mark.
20. A method of patterning a nano-lithographic substrate, comprising: patterning the substrate with a plurality of recessions and a plurality of protrusions while simultaneously patterning at least one alignment mark in the substrate, the alignment mark including high contrast material visible during imprint lithography patterning of polymerizable material.
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US12/464,487 US8012395B2 (en) | 2006-04-18 | 2009-05-12 | Template having alignment marks formed of contrast material |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011097514A3 (en) * | 2010-02-05 | 2011-10-13 | Molecular Imprints, Inc. | Templates having high contrast alignment marks |
EP2618978A4 (en) * | 2010-09-24 | 2015-06-03 | Canon Nanotechnologies Inc | High contrast alignment marks through multiple stage imprinting |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7162035B1 (en) | 2000-05-24 | 2007-01-09 | Tracer Detection Technology Corp. | Authentication method and system |
US7995196B1 (en) | 2008-04-23 | 2011-08-09 | Tracer Detection Technology Corp. | Authentication method and system |
US20100092599A1 (en) * | 2008-10-10 | 2010-04-15 | Molecular Imprints, Inc. | Complementary Alignment Marks for Imprint Lithography |
US8231821B2 (en) * | 2008-11-04 | 2012-07-31 | Molecular Imprints, Inc. | Substrate alignment |
US8432548B2 (en) * | 2008-11-04 | 2013-04-30 | Molecular Imprints, Inc. | Alignment for edge field nano-imprinting |
NL2005266A (en) * | 2009-10-28 | 2011-05-02 | Asml Netherlands Bv | Imprint lithography. |
NL2005975A (en) * | 2010-03-03 | 2011-09-06 | Asml Netherlands Bv | Imprint lithography. |
US8967992B2 (en) * | 2011-04-25 | 2015-03-03 | Canon Nanotechnologies, Inc. | Optically absorptive material for alignment marks |
JP5831012B2 (en) * | 2011-07-27 | 2015-12-09 | 大日本印刷株式会社 | Alignment mark for imprint, template provided with the mark, and manufacturing method thereof |
JP2014011254A (en) * | 2012-06-28 | 2014-01-20 | Dainippon Printing Co Ltd | Alignment mark, template with the mark, and manufacturing method of the template |
US9377683B2 (en) | 2013-03-22 | 2016-06-28 | HGST Netherlands B.V. | Imprint template with optically-detectable alignment marks and method for making using block copolymers |
JP5989610B2 (en) | 2013-08-05 | 2016-09-07 | 株式会社東芝 | Mask set design method and mask set design program |
JP6571656B2 (en) * | 2013-12-10 | 2019-09-04 | キャノン・ナノテクノロジーズ・インコーポレーテッド | Imprint lithography template and method for zero gap imprinting |
JP6503211B2 (en) * | 2015-03-27 | 2019-04-17 | 旭化成株式会社 | Imprint molding mold and manufacturing method thereof |
JP2016028442A (en) * | 2015-10-08 | 2016-02-25 | 大日本印刷株式会社 | Template |
CN105353592B (en) * | 2015-11-25 | 2018-09-21 | 武汉新芯集成电路制造有限公司 | A kind of photoetching process alignment methods |
JP6308281B2 (en) * | 2016-10-21 | 2018-04-11 | 大日本印刷株式会社 | Template manufacturing method |
US11194247B2 (en) | 2018-01-31 | 2021-12-07 | Canon Kabushiki Kaisha | Extrusion control by capillary force reduction |
US10921706B2 (en) | 2018-06-07 | 2021-02-16 | Canon Kabushiki Kaisha | Systems and methods for modifying mesa sidewalls |
US10990004B2 (en) | 2018-07-18 | 2021-04-27 | Canon Kabushiki Kaisha | Photodissociation frame window, systems including a photodissociation frame window, and methods of using a photodissociation frame window |
US11728173B2 (en) * | 2020-09-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Masking layer with post treatment |
US20230205080A1 (en) * | 2021-12-27 | 2023-06-29 | Canon Kabushiki Kaisha | Template, method of forming a template, apparatus and method of manufacturing an article |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1760526A1 (en) * | 2005-09-06 | 2007-03-07 | Canon Kabushiki Kaisha | Mold, imprint method, and process for producing chip |
US20080067721A1 (en) * | 2006-09-14 | 2008-03-20 | Zhaoning Yu | Nanoimprint molds and methods of forming the same |
Family Cites Families (255)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1183056A (en) * | 1966-11-29 | 1970-03-04 | Bp Chemicals U K Ltd Formerly | Metering Process for Dispensing Measured Quantities of Liquefied Gas |
US4022855A (en) * | 1975-03-17 | 1977-05-10 | Eastman Kodak Company | Method for making a plastic optical element having a gradient index of refraction |
FR2325018A1 (en) * | 1975-06-23 | 1977-04-15 | Ibm | INTERVAL MEASURING DEVICE FOR DEFINING THE DISTANCE BETWEEN TWO OR MORE FACES |
US4208240A (en) | 1979-01-26 | 1980-06-17 | Gould Inc. | Method and apparatus for controlling plasma etching |
DE3022709A1 (en) | 1980-06-18 | 1982-01-07 | Felix Schoeller jr. GmbH & Co KG, 4500 Osnabrück | WATERPROOF PHOTOGRAPHIC PAPER AND METHOD FOR THE PRODUCTION THEREOF |
US4576900A (en) * | 1981-10-09 | 1986-03-18 | Amdahl Corporation | Integrated circuit multilevel interconnect system and method |
DE3208081A1 (en) | 1982-03-06 | 1983-09-08 | Braun Ag, 6000 Frankfurt | METHOD FOR PRODUCING A SHEET-LIKE SHEAR FILM FOR AN ELECTRICALLY OPERATED DRY SHAVER WITH Raises On Its Face Facing The Skin |
US4440804A (en) * | 1982-08-02 | 1984-04-03 | Fairchild Camera & Instrument Corporation | Lift-off process for fabricating self-aligned contacts |
US4490409A (en) | 1982-09-07 | 1984-12-25 | Energy Sciences, Inc. | Process and apparatus for decorating the surfaces of electron irradiation cured coatings on radiation-sensitive substrates |
US4637904A (en) * | 1983-11-14 | 1987-01-20 | Rohm And Haas Company | Process for molding a polymeric layer onto a substrate |
JPS60111425A (en) | 1983-11-22 | 1985-06-17 | Toshiba Corp | Formation of alignment mark |
US4512848A (en) * | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
US4908298A (en) | 1985-03-19 | 1990-03-13 | International Business Machines Corporation | Method of creating patterned multilayer films for use in production of semiconductor circuits and systems |
EP0228671A1 (en) | 1985-12-23 | 1987-07-15 | General Electric Company | Method for the production of a coated substrate with controlled surface characteristics |
DE3767317D1 (en) | 1986-02-13 | 1991-02-21 | Philips Nv | DIE FOR AN IMPRESSION PROCESS. |
US4676868A (en) | 1986-04-23 | 1987-06-30 | Fairchild Semiconductor Corporation | Method for planarizing semiconductor substrates |
US4737425A (en) * | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
KR900004269B1 (en) | 1986-06-11 | 1990-06-18 | 가부시기가이샤 도시바 | Method and device for positioing 1st body and 2nd body |
JPS6376330A (en) | 1986-09-18 | 1988-04-06 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
FR2604553A1 (en) | 1986-09-29 | 1988-04-01 | Rhone Poulenc Chimie | RIGID POLYMER SUBSTRATE FOR OPTICAL DISC AND OPTICAL DISCS OBTAINED FROM THE SUBSTRATE |
US4707218A (en) | 1986-10-28 | 1987-11-17 | International Business Machines Corporation | Lithographic image size reduction |
JPH06104375B2 (en) * | 1986-11-10 | 1994-12-21 | 松下電器産業株式会社 | Printing method |
JP2823016B2 (en) | 1986-12-25 | 1998-11-11 | ソニー株式会社 | Method of manufacturing transmission screen |
US6391798B1 (en) * | 1987-02-27 | 2002-05-21 | Agere Systems Guardian Corp. | Process for planarization a semiconductor substrate |
US6048799A (en) * | 1987-02-27 | 2000-04-11 | Lucent Technologies Inc. | Device fabrication involving surface planarization |
US5736424A (en) * | 1987-02-27 | 1998-04-07 | Lucent Technologies Inc. | Device fabrication involving planarization |
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US5028361A (en) | 1987-11-09 | 1991-07-02 | Takeo Fujimoto | Method for molding a photosensitive composition |
US4936465A (en) | 1987-12-07 | 1990-06-26 | Zoeld Tibor | Method and apparatus for fast, reliable, and environmentally safe dispensing of fluids, gases and individual particles of a suspension through pressure control at well defined parts of a closed flow-through system |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
US4866307A (en) | 1988-04-20 | 1989-09-12 | Texas Instruments Incorporated | Integrated programmable bit circuit using single-level poly construction |
US4862019A (en) | 1988-04-20 | 1989-08-29 | Texas Instruments Incorporated | Single-level poly programmable bit circuit |
US4908296A (en) * | 1988-05-31 | 1990-03-13 | E. I. Du Pont De Nemours And Company | Photosensitive semi-aqueous developable ceramic coating composition |
JPH0269936A (en) | 1988-07-28 | 1990-03-08 | Siemens Ag | Method of making resin structure on semiconductor material |
US4921778A (en) * | 1988-07-29 | 1990-05-01 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
JP2546350B2 (en) | 1988-09-09 | 1996-10-23 | キヤノン株式会社 | Alignment device |
US4964945A (en) | 1988-12-09 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Lift off patterning process on a flexible substrate |
US5110514A (en) * | 1989-05-01 | 1992-05-05 | Soane Technologies, Inc. | Controlled casting of a shrinkable material |
US5053318A (en) | 1989-05-18 | 1991-10-01 | Shipley Company Inc. | Plasma processing with metal mask integration |
US4932358A (en) | 1989-05-18 | 1990-06-12 | Genus, Inc. | Perimeter wafer seal |
CA2011927C (en) | 1989-06-02 | 1996-12-24 | Alan Lee Sidman | Microlithographic method for producing thick, vertically-walled photoresist patterns |
US4919748A (en) * | 1989-06-30 | 1990-04-24 | At&T Bell Laboratories | Method for tapered etching |
US5151754A (en) | 1989-10-06 | 1992-09-29 | Kabushiki Kaisha Toshiba | Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects |
US5362606A (en) | 1989-10-18 | 1994-11-08 | Massachusetts Institute Of Technology | Positive resist pattern formation through focused ion beam exposure and surface barrier silylation |
US5073230A (en) | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
US5003062A (en) * | 1990-04-19 | 1991-03-26 | Taiwan Semiconductor Manufacturing Co. | Semiconductor planarization process for submicron devices |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
US5451435A (en) | 1990-06-18 | 1995-09-19 | At&T Corp. | Method for forming dielectric |
DE4029912A1 (en) | 1990-09-21 | 1992-03-26 | Philips Patentverwaltung | METHOD FOR FORMING AT LEAST ONE TRENCH IN A SUBSTRATE LAYER |
US5126006A (en) | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
US5288436A (en) * | 1990-11-06 | 1994-02-22 | Colloptics, Inc. | Methods of fabricating a collagen lenticule precursor for modifying the cornea |
US5362940A (en) | 1990-11-09 | 1994-11-08 | Litel Instruments | Use of Fresnel zone plates for material processing |
US5240878A (en) | 1991-04-26 | 1993-08-31 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5212147A (en) * | 1991-05-15 | 1993-05-18 | Hewlett-Packard Company | Method of forming a patterned in-situ high Tc superconductive film |
FR2677043B1 (en) | 1991-05-29 | 1993-12-24 | Solems | METHOD, DEVICE AND APPARATUS FOR TREATING A SUBSTRATE WITH A LOW PRESSURE PLASMA. |
EP0524759A1 (en) | 1991-07-23 | 1993-01-27 | AT&T Corp. | Device fabrication process |
US5357122A (en) | 1991-09-05 | 1994-10-18 | Sony Corporation | Three-dimensional optical-electronic integrated circuit device with raised sections |
JPH0580530A (en) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | Production of thin film pattern |
US5277749A (en) * | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
US5263073A (en) | 1991-12-20 | 1993-11-16 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Scanning systems for high resolution E-beam and X-ray lithography |
JP2867194B2 (en) | 1992-02-05 | 1999-03-08 | 東京エレクトロン株式会社 | Processing device and processing method |
US5244818A (en) | 1992-04-08 | 1993-09-14 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
US5545367A (en) | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5246880A (en) | 1992-04-27 | 1993-09-21 | Eastman Kodak Company | Method for creating substrate electrodes for flip chip and other applications |
JP3157605B2 (en) | 1992-04-28 | 2001-04-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
US5371822A (en) | 1992-06-09 | 1994-12-06 | Digital Equipment Corporation | Method of packaging and assembling opto-electronic integrated circuits |
US5232874A (en) | 1992-06-22 | 1993-08-03 | Micron Technology, Inc. | Method for producing a semiconductor wafer having shallow and deep buried contacts |
US5376810A (en) | 1992-06-26 | 1994-12-27 | California Institute Of Technology | Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response |
US5445195A (en) | 1992-07-15 | 1995-08-29 | Kim; Dae S. | Automatic computer-controlled liquid dispenser |
US5601641A (en) * | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5250472A (en) | 1992-09-03 | 1993-10-05 | Industrial Technology Research Institute | Spin-on-glass integration planarization having siloxane partial etchback and silicate processes |
US5431777A (en) | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
TW227628B (en) | 1992-12-10 | 1994-08-01 | Samsung Electronics Co Ltd | |
DE69405451T2 (en) | 1993-03-16 | 1998-03-12 | Koninkl Philips Electronics Nv | Method and device for producing a structured relief image from cross-linked photoresist on a flat substrate surface |
US5348616A (en) | 1993-05-03 | 1994-09-20 | Motorola, Inc. | Method for patterning a mold |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
JP2837063B2 (en) * | 1993-06-04 | 1998-12-14 | シャープ株式会社 | Method of forming resist pattern |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US6180239B1 (en) * | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US5776748A (en) | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US5900160A (en) * | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US5449117A (en) | 1993-10-04 | 1995-09-12 | Technical Concepts, L.P. | Apparatus and method for controllably dispensing drops of liquid |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
NL9401260A (en) * | 1993-11-12 | 1995-06-01 | Cornelis Johannes Maria Van Ri | Membrane for microfiltration, ultrafiltration, gas separation and catalysis, method for manufacturing such a membrane, mold for manufacturing such a membrane, as well as various separation systems comprising such a membrane. |
US5434107A (en) | 1994-01-28 | 1995-07-18 | Texas Instruments Incorporated | Method for planarization |
DE4408537A1 (en) * | 1994-03-14 | 1995-09-21 | Leybold Ag | Device for the transport of substrates |
US5542605A (en) | 1994-04-07 | 1996-08-06 | Flow-Rite Controls, Ltd. | Automatic liquid dispenser |
US5453157A (en) | 1994-05-16 | 1995-09-26 | Texas Instruments Incorporated | Low temperature anisotropic ashing of resist for semiconductor fabrication |
US5686356A (en) | 1994-09-30 | 1997-11-11 | Texas Instruments Incorporated | Conductor reticulation for improved device planarity |
US5477058A (en) * | 1994-11-09 | 1995-12-19 | Kabushiki Kaisha Toshiba | Attenuated phase-shifting mask with opaque reticle alignment marks |
EP0715334B1 (en) | 1994-11-30 | 1999-04-14 | Applied Materials, Inc. | Plasma reactors for processing semiconductor wafers |
US5458520A (en) | 1994-12-13 | 1995-10-17 | International Business Machines Corporation | Method for producing planar field emission structure |
US5628917A (en) * | 1995-02-03 | 1997-05-13 | Cornell Research Foundation, Inc. | Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures |
US5849209A (en) | 1995-03-31 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Mold material made with additives |
US5843363A (en) | 1995-03-31 | 1998-12-01 | Siemens Aktiengesellschaft | Ablation patterning of multi-layered structures |
US6342389B1 (en) | 1995-04-10 | 2002-01-29 | Roger S. Cubicciotti | Modified phycobilisomes and uses therefore |
GB9509487D0 (en) * | 1995-05-10 | 1995-07-05 | Ici Plc | Micro relief element & preparation thereof |
US5820769A (en) | 1995-05-24 | 1998-10-13 | Regents Of The University Of Minnesota | Method for making magnetic storage having discrete elements with quantized magnetic moments |
US5948570A (en) | 1995-05-26 | 1999-09-07 | Lucent Technologies Inc. | Process for dry lithographic etching |
US5654238A (en) | 1995-08-03 | 1997-08-05 | International Business Machines Corporation | Method for etching vertical contact holes without substrate damage caused by directional etching |
US5849222A (en) | 1995-09-29 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Method for reducing lens hole defects in production of contact lens blanks |
US6482742B1 (en) | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US20040137734A1 (en) | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US7758794B2 (en) | 2001-10-29 | 2010-07-20 | Princeton University | Method of making an article comprising nanoscale patterns with reduced edge roughness |
US6309580B1 (en) | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US20040036201A1 (en) * | 2000-07-18 | 2004-02-26 | Princeton University | Methods and apparatus of field-induced pressure imprint lithography |
US5772905A (en) | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6518189B1 (en) * | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US5669303A (en) | 1996-03-04 | 1997-09-23 | Motorola | Apparatus and method for stamping a surface |
US6355198B1 (en) * | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
US20030179354A1 (en) | 1996-03-22 | 2003-09-25 | Nikon Corporation | Mask-holding apparatus for a light exposure apparatus and related scanning-exposure method |
JPH09283621A (en) | 1996-04-10 | 1997-10-31 | Murata Mfg Co Ltd | Formation of t-type gate electrode of semiconductor device and structure thereof |
US5942443A (en) * | 1996-06-28 | 1999-08-24 | Caliper Technologies Corporation | High throughput screening assay systems in microscale fluidic devices |
US5888650A (en) * | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US6074827A (en) | 1996-07-30 | 2000-06-13 | Aclara Biosciences, Inc. | Microfluidic method for nucleic acid purification and processing |
DE69724269T2 (en) | 1996-09-06 | 2004-06-09 | Obducat Ab | METHOD FOR ANISOTROPE ETCHING STRUCTURES IN CONDUCTIVE MATERIALS |
US5858580A (en) * | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
US6228539B1 (en) | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
JPH10123534A (en) * | 1996-10-23 | 1998-05-15 | Toshiba Corp | Liquid crystal display element |
US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US5983906A (en) | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
US5817579A (en) | 1997-04-09 | 1998-10-06 | Vanguard International Semiconductor Corporation | Two step plasma etch method for forming self aligned contact |
US5948470A (en) | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US5812629A (en) | 1997-04-30 | 1998-09-22 | Clauser; John F. | Ultrahigh resolution interferometric x-ray imaging |
US5926690A (en) | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
US5974150A (en) | 1997-09-30 | 1999-10-26 | Tracer Detection Technology Corp. | System and method for authentication of goods |
JP4498601B2 (en) | 1998-03-05 | 2010-07-07 | オブデュキャット、アクチボラグ | Etching method |
US6150680A (en) | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
JP3780700B2 (en) | 1998-05-26 | 2006-05-31 | セイコーエプソン株式会社 | Pattern forming method, pattern forming apparatus, pattern forming plate, pattern forming plate manufacturing method, color filter manufacturing method, conductive film manufacturing method, and liquid crystal panel manufacturing method |
FI109944B (en) | 1998-08-11 | 2002-10-31 | Valtion Teknillinen | Optoelectronic component and manufacturing method |
US5907782A (en) * | 1998-08-15 | 1999-05-25 | Acer Semiconductor Manufacturing Inc. | Method of forming a multiple fin-pillar capacitor for a high density dram cell |
US6713238B1 (en) | 1998-10-09 | 2004-03-30 | Stephen Y. Chou | Microscale patterning and articles formed thereby |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6665014B1 (en) | 1998-11-25 | 2003-12-16 | Intel Corporation | Microlens and photodetector |
US6247986B1 (en) * | 1998-12-23 | 2001-06-19 | 3M Innovative Properties Company | Method for precise molding and alignment of structures on a substrate using a stretchable mold |
US6521536B1 (en) * | 1999-01-11 | 2003-02-18 | Micron Technology, Inc. | Planarization process |
US6274294B1 (en) | 1999-02-03 | 2001-08-14 | Electroformed Stents, Inc. | Cylindrical photolithography exposure process and apparatus |
US6565928B2 (en) | 1999-03-08 | 2003-05-20 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US6334960B1 (en) | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
US6387783B1 (en) * | 1999-04-26 | 2002-05-14 | International Business Machines Corporation | Methods of T-gate fabrication using a hybrid resist |
US6255022B1 (en) * | 1999-06-17 | 2001-07-03 | Taiwan Semiconductor Manufacturing Company | Dry development process for a bi-layer resist system utilized to reduce microloading |
EP1065567A3 (en) * | 1999-06-29 | 2001-05-16 | Applied Materials, Inc. | Integrated critical dimension control |
US6379573B1 (en) * | 1999-07-13 | 2002-04-30 | University Of Honolulu | Self-limiting isotropic wet etching process |
US6242363B1 (en) | 1999-08-11 | 2001-06-05 | Adc Telecommunications, Inc. | Method of etching a wafer layer using a sacrificial wall to form vertical sidewall |
US6383928B1 (en) * | 1999-09-02 | 2002-05-07 | Texas Instruments Incorporated | Post copper CMP clean |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6329256B1 (en) | 1999-09-24 | 2001-12-11 | Advanced Micro Devices, Inc. | Self-aligned damascene gate formation with low gate resistance |
US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US6623579B1 (en) | 1999-11-02 | 2003-09-23 | Alien Technology Corporation | Methods and apparatus for fluidic self assembly |
WO2001047003A2 (en) * | 1999-12-23 | 2001-06-28 | University Of Massachusetts | Methods and apparatus for forming submicron patterns on films |
US6498640B1 (en) | 1999-12-30 | 2002-12-24 | Koninklijke Philips Electronics N.V. | Method to measure alignment using latent image grating structures |
US6376379B1 (en) * | 2000-02-01 | 2002-04-23 | Chartered Semiconductor Manufacturing Ltd. | Method of hard mask patterning |
US6337262B1 (en) * | 2000-03-06 | 2002-01-08 | Chartered Semiconductor Manufacturing Ltd. | Self aligned T-top gate process integration |
US6387330B1 (en) * | 2000-04-12 | 2002-05-14 | George Steven Bova | Method and apparatus for storing and dispensing reagents |
US7859519B2 (en) | 2000-05-01 | 2010-12-28 | Tulbert David J | Human-machine interface |
US6593240B1 (en) | 2000-06-28 | 2003-07-15 | Infineon Technologies, North America Corp | Two step chemical mechanical polishing process |
EP2264523A3 (en) | 2000-07-16 | 2011-11-30 | Board Of Regents, The University Of Texas System | A method of forming a pattern on a substrate in imprint lithographic processes |
WO2002006902A2 (en) | 2000-07-17 | 2002-01-24 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
US20050037143A1 (en) * | 2000-07-18 | 2005-02-17 | Chou Stephen Y. | Imprint lithography with improved monitoring and control and apparatus therefor |
US7211214B2 (en) * | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
US7635262B2 (en) | 2000-07-18 | 2009-12-22 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
JP2004505273A (en) | 2000-08-01 | 2004-02-19 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | Method for highly accurate sensing of gap and orientation between transparent template and substrate for transfer lithography |
US6326627B1 (en) | 2000-08-02 | 2001-12-04 | Archimedes Technology Group, Inc. | Mass filtering sputtered ion source |
KR100350811B1 (en) * | 2000-08-19 | 2002-09-05 | 삼성전자 주식회사 | Metal Via Contact of Semiconductor Devices and Method of Forming it |
US6629292B1 (en) | 2000-10-06 | 2003-09-30 | International Business Machines Corporation | Method for forming graphical images in semiconductor devices |
KR101031528B1 (en) | 2000-10-12 | 2011-04-27 | 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 | Template for room temperature, low pressure micro- and nano- imprint lithography |
US6879162B2 (en) * | 2000-11-07 | 2005-04-12 | Sri International | System and method of micro-fluidic handling and dispensing using micro-nozzle structures |
TW525221B (en) | 2000-12-04 | 2003-03-21 | Ebara Corp | Substrate processing method |
US6632742B2 (en) | 2001-04-18 | 2003-10-14 | Promos Technologies Inc. | Method for avoiding defects produced in the CMP process |
US6841483B2 (en) | 2001-02-12 | 2005-01-11 | Lam Research Corporation | Unique process chemistry for etching organic low-k materials |
US6620733B2 (en) | 2001-02-12 | 2003-09-16 | Lam Research Corporation | Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics |
US6387787B1 (en) | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
US6955767B2 (en) | 2001-03-22 | 2005-10-18 | Hewlett-Packard Development Company, Lp. | Scanning probe based lithographic alignment |
US6517977B2 (en) * | 2001-03-28 | 2003-02-11 | Motorola, Inc. | Lithographic template and method of formation and use |
US6541360B1 (en) * | 2001-04-30 | 2003-04-01 | Advanced Micro Devices, Inc. | Bi-layer trim etch process to form integrated circuit gate structures |
US6534418B1 (en) * | 2001-04-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Use of silicon containing imaging layer to define sub-resolution gate structures |
US6964793B2 (en) | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
JP2002348680A (en) | 2001-05-22 | 2002-12-04 | Sharp Corp | Pattern of metal film and manufacturing method therefor |
US6847433B2 (en) | 2001-06-01 | 2005-01-25 | Agere Systems, Inc. | Holder, system, and process for improving overlay in lithography |
TW488080B (en) | 2001-06-08 | 2002-05-21 | Au Optronics Corp | Method for producing thin film transistor |
TWI285279B (en) | 2001-06-14 | 2007-08-11 | Himax Tech Ltd | Liquid crystal display panel having sealant |
US7049049B2 (en) | 2001-06-27 | 2006-05-23 | University Of South Florida | Maskless photolithography for using photoreactive agents |
US20050064344A1 (en) * | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
CA2454570C (en) | 2001-07-25 | 2016-12-20 | The Trustees Of Princeton University | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
US6678038B2 (en) * | 2001-08-03 | 2004-01-13 | Nikon Corporation | Apparatus and methods for detecting tool-induced shift in microlithography apparatus |
WO2003035932A1 (en) * | 2001-09-25 | 2003-05-01 | Minuta Technology Co., Ltd. | Method for forming a micro-pattern on a substrate by using capillary force |
US20030080472A1 (en) | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method with bonded release layer for molding small patterns |
US6716767B2 (en) | 2001-10-31 | 2004-04-06 | Brewer Science, Inc. | Contact planarization materials that generate no volatile byproducts or residue during curing |
US6965818B2 (en) * | 2001-11-28 | 2005-11-15 | Onan Corporation | Mobile energy management system |
JP2003202584A (en) | 2002-01-08 | 2003-07-18 | Toshiba Corp | Liquid crystal display device |
US6621960B2 (en) | 2002-01-24 | 2003-09-16 | Oplink Communications, Inc. | Method of fabricating multiple superimposed fiber Bragg gratings |
DE10307518B4 (en) | 2002-02-22 | 2011-04-14 | Hoya Corp. | Halftone phase shift mask blank, halftone phase shift mask and method of making the same |
US7455955B2 (en) * | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
US7117583B2 (en) | 2002-03-18 | 2006-10-10 | International Business Machines Corporation | Method and apparatus using a pre-patterned seed layer for providing an aligned coil for an inductive head structure |
US7223350B2 (en) | 2002-03-29 | 2007-05-29 | International Business Machines Corporation | Planarization in an encapsulation process for thin film surfaces |
US6783717B2 (en) | 2002-04-22 | 2004-08-31 | International Business Machines Corporation | Process of fabricating a precision microcontact printing stamp |
US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US20030224116A1 (en) | 2002-05-30 | 2003-12-04 | Erli Chen | Non-conformal overcoat for nonometer-sized surface structure |
US6926929B2 (en) | 2002-07-09 | 2005-08-09 | Molecular Imprints, Inc. | System and method for dispensing liquids |
US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US6908861B2 (en) | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US7442336B2 (en) | 2003-08-21 | 2008-10-28 | Molecular Imprints, Inc. | Capillary imprinting technique |
US7070405B2 (en) | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7027156B2 (en) * | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US7071088B2 (en) | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
US8349241B2 (en) * | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US20040065252A1 (en) * | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
US6833325B2 (en) | 2002-10-11 | 2004-12-21 | Lam Research Corporation | Method for plasma etching performance enhancement |
US6929762B2 (en) | 2002-11-13 | 2005-08-16 | Molecular Imprints, Inc. | Method of reducing pattern distortions during imprint lithography processes |
KR100486727B1 (en) * | 2002-11-14 | 2005-05-03 | 삼성전자주식회사 | Fabrication method of planar lens |
US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US6871558B2 (en) * | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
US7365103B2 (en) * | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US7323130B2 (en) * | 2002-12-13 | 2008-01-29 | Molecular Imprints, Inc. | Magnification correction employing out-of-plane distortion of a substrate |
US7113336B2 (en) | 2002-12-30 | 2006-09-26 | Ian Crosby | Microlens including wire-grid polarizer and methods of manufacture |
JP4651390B2 (en) | 2003-03-27 | 2011-03-16 | コリア・インスティテュート・オブ・マシナリー・アンド・マテリアルズ | UV nanoimprint lithography using multiple relief element stamps |
TWI228638B (en) | 2003-06-10 | 2005-03-01 | Ind Tech Res Inst | Method for and apparatus for bonding patterned imprint to a substrate by adhering means |
US7790231B2 (en) * | 2003-07-10 | 2010-09-07 | Brewer Science Inc. | Automated process and apparatus for planarization of topographical surfaces |
US7136150B2 (en) | 2003-09-25 | 2006-11-14 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
US7090716B2 (en) | 2003-10-02 | 2006-08-15 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US8211214B2 (en) | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
JP4322096B2 (en) | 2003-11-14 | 2009-08-26 | Tdk株式会社 | RESIST PATTERN FORMING METHOD, MAGNETIC RECORDING MEDIUM, AND MAGNETIC HEAD MANUFACTURING METHOD |
US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US20050189676A1 (en) | 2004-02-27 | 2005-09-01 | Molecular Imprints, Inc. | Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography |
US20050270516A1 (en) | 2004-06-03 | 2005-12-08 | Molecular Imprints, Inc. | System for magnification and distortion correction during nano-scale manufacturing |
DE602005022874D1 (en) | 2004-06-03 | 2010-09-23 | Molecular Imprints Inc | FLUID AND DROP EXPOSURE AS REQUIRED FOR MANUFACTURE IN THE NANO AREA |
KR101175108B1 (en) | 2004-06-03 | 2012-08-21 | 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 | System and method for improvement of alignment and overlay for microlithography |
US7673775B2 (en) | 2004-06-25 | 2010-03-09 | Cristian Penciu | Apparatus for mixing and dispensing fluids |
US7785526B2 (en) * | 2004-07-20 | 2010-08-31 | Molecular Imprints, Inc. | Imprint alignment method, system, and template |
US20060017876A1 (en) * | 2004-07-23 | 2006-01-26 | Molecular Imprints, Inc. | Displays and method for fabricating displays |
US7105452B2 (en) | 2004-08-13 | 2006-09-12 | Molecular Imprints, Inc. | Method of planarizing a semiconductor substrate with an etching chemistry |
KR100618861B1 (en) * | 2004-09-09 | 2006-08-31 | 삼성전자주식회사 | Semiconductor device having local recess channel transistor and method of fabricating the same |
US20060062922A1 (en) | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US7244386B2 (en) | 2004-09-27 | 2007-07-17 | Molecular Imprints, Inc. | Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom |
US7029944B1 (en) * | 2004-09-30 | 2006-04-18 | Sharp Laboratories Of America, Inc. | Methods of forming a microlens array over a substrate employing a CMP stop |
JP2006133334A (en) | 2004-11-02 | 2006-05-25 | Seiko Epson Corp | Member with recessed part, method for manufacturing member with projection part, the member with projection part, transmission-type screen and rear-type projector |
US20070231421A1 (en) | 2006-04-03 | 2007-10-04 | Molecular Imprints, Inc. | Enhanced Multi Channel Alignment |
US7630067B2 (en) | 2004-11-30 | 2009-12-08 | Molecular Imprints, Inc. | Interferometric analysis method for the manufacture of nano-scale devices |
US7292326B2 (en) | 2004-11-30 | 2007-11-06 | Molecular Imprints, Inc. | Interferometric analysis for the manufacture of nano-scale devices |
WO2006060758A2 (en) | 2004-12-01 | 2006-06-08 | Molecular Imprints, Inc. | Methods of exposure for the purpose of thermal management for imprint lithography processes |
US7357876B2 (en) | 2004-12-01 | 2008-04-15 | Molecular Imprints, Inc. | Eliminating printability of sub-resolution defects in imprint lithography |
US7906058B2 (en) | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
CN101535021A (en) * | 2005-12-08 | 2009-09-16 | 分子制模股份有限公司 | Method and system for double-sided patterning of substrates |
US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
WO2007117524A2 (en) | 2006-04-03 | 2007-10-18 | Molecular Imprints, Inc. | Method of concurrently patterning a substrate having a plurality of fields and alignment marks |
US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
US8142850B2 (en) | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US7547398B2 (en) | 2006-04-18 | 2009-06-16 | Molecular Imprints, Inc. | Self-aligned process for fabricating imprint templates containing variously etched features |
JP5188192B2 (en) * | 2007-02-20 | 2013-04-24 | キヤノン株式会社 | MOLD, MOLD MANUFACTURING METHOD, IMPRINT APPARATUS, IMPRINT METHOD, AND STRUCTURE MANUFACTURING METHOD USING IMPRINT METHOD |
US7837907B2 (en) * | 2007-07-20 | 2010-11-23 | Molecular Imprints, Inc. | Alignment system and method for a substrate in a nano-imprint process |
US20090148032A1 (en) | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Alignment Using Moire Patterns |
US20090147237A1 (en) | 2007-12-05 | 2009-06-11 | Molecular Imprints, Inc. | Spatial Phase Feature Location |
-
2009
- 2009-05-12 US US12/464,487 patent/US8012395B2/en active Active
- 2009-05-13 WO PCT/US2009/002959 patent/WO2010042140A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1760526A1 (en) * | 2005-09-06 | 2007-03-07 | Canon Kabushiki Kaisha | Mold, imprint method, and process for producing chip |
US20080067721A1 (en) * | 2006-09-14 | 2008-03-20 | Zhaoning Yu | Nanoimprint molds and methods of forming the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011097514A3 (en) * | 2010-02-05 | 2011-10-13 | Molecular Imprints, Inc. | Templates having high contrast alignment marks |
US8961852B2 (en) | 2010-02-05 | 2015-02-24 | Canon Nanotechnologies, Inc. | Templates having high contrast alignment marks |
EP2618978A4 (en) * | 2010-09-24 | 2015-06-03 | Canon Nanotechnologies Inc | High contrast alignment marks through multiple stage imprinting |
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US20090250840A1 (en) | 2009-10-08 |
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