US8507361B2
(en)
*
|
2000-11-27 |
2013-08-13 |
Soitec |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
|
US7417266B1
(en)
|
2004-06-10 |
2008-08-26 |
Qspeed Semiconductor Inc. |
MOSFET having a JFET embedded as a body diode
|
JP5023318B2
(en)
*
|
2005-05-19 |
2012-09-12 |
国立大学法人三重大学 |
3-5 nitride semiconductor multilayer substrate, 3-5 nitride semiconductor free-standing substrate manufacturing method, and semiconductor device
|
CA2609252C
(en)
*
|
2005-05-23 |
2012-01-10 |
Neomax Materials Co., Ltd. |
Cu-mo substrate and method for producing same
|
TWI451597B
(en)
*
|
2010-10-29 |
2014-09-01 |
Epistar Corp |
Optoelectronic device and method for manufacturing the same
|
US9530940B2
(en)
|
2005-10-19 |
2016-12-27 |
Epistar Corporation |
Light-emitting device with high light extraction
|
EP2094173B1
(en)
*
|
2006-12-21 |
2016-03-30 |
Doheny Eye Institute |
Disposable vitrectomy handpiece
|
JP4321595B2
(en)
*
|
2007-01-23 |
2009-08-26 |
住友電気工業株式会社 |
Method for producing group III-V compound semiconductor substrate
|
KR100893360B1
(en)
*
|
2008-05-02 |
2009-04-15 |
(주)그랜드 텍 |
A formation method of buffer layer for gan single crystal
|
JP5408477B2
(en)
*
|
2008-05-13 |
2014-02-05 |
株式会社リコー |
Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
|
US8471307B2
(en)
*
|
2008-06-13 |
2013-06-25 |
Texas Instruments Incorporated |
In-situ carbon doped e-SiGeCB stack for MOS transistor
|
US8852378B2
(en)
*
|
2008-07-15 |
2014-10-07 |
Corporation For National Research Initiatives |
Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices
|
DE102008035816B4
(en)
*
|
2008-07-31 |
2011-08-25 |
GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG, 01109 |
Increase performance in PMOS and NMOS transistors by using an embedded deformed semiconductor material
|
JP2010045156A
(en)
*
|
2008-08-12 |
2010-02-25 |
Toshiba Corp |
Method of producing semiconductor device
|
US9070827B2
(en)
|
2010-10-29 |
2015-06-30 |
Epistar Corporation |
Optoelectronic device and method for manufacturing the same
|
US8946736B2
(en)
|
2010-10-29 |
2015-02-03 |
Epistar Corporation |
Optoelectronic device and method for manufacturing the same
|
US8568959B2
(en)
*
|
2008-10-03 |
2013-10-29 |
International Business Machines Corporation |
Techniques for reducing degradation and/or modifying feature size of photomasks
|
US8551862B2
(en)
|
2009-01-15 |
2013-10-08 |
Shin-Etsu Chemical Co., Ltd. |
Method of manufacturing laminated wafer by high temperature laminating method
|
CN102439740B
(en)
*
|
2009-03-06 |
2015-01-14 |
李贞勋 |
Light emitting device
|
JP2011029574A
(en)
*
|
2009-03-31 |
2011-02-10 |
Toyoda Gosei Co Ltd |
Method for producing group iii nitride-based compound semiconductor device
|
CN202746822U
(en)
*
|
2009-09-18 |
2013-02-20 |
梅赛德斯纺织有限公司 |
Fire hose joint and fire hose component
|
US9882073B2
(en)
|
2013-10-09 |
2018-01-30 |
Skorpios Technologies, Inc. |
Structures for bonding a direct-bandgap chip to a silicon photonic device
|
US9316785B2
(en)
|
2013-10-09 |
2016-04-19 |
Skorpios Technologies, Inc. |
Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
|
US8611388B2
(en)
|
2009-10-13 |
2013-12-17 |
Skorpios Technologies, Inc. |
Method and system for heterogeneous substrate bonding of waveguide receivers
|
US8368995B2
(en)
|
2009-10-13 |
2013-02-05 |
Skorpios Technologies, Inc. |
Method and system for hybrid integration of an opto-electronic integrated circuit
|
US8867578B2
(en)
|
2009-10-13 |
2014-10-21 |
Skorpios Technologies, Inc. |
Method and system for hybrid integration of a tunable laser for a cable TV transmitter
|
US8630326B2
(en)
|
2009-10-13 |
2014-01-14 |
Skorpios Technologies, Inc. |
Method and system of heterogeneous substrate bonding for photonic integration
|
US11181688B2
(en)
|
2009-10-13 |
2021-11-23 |
Skorpios Technologies, Inc. |
Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
|
US8605766B2
(en)
|
2009-10-13 |
2013-12-10 |
Skorpios Technologies, Inc. |
Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
|
US8615025B2
(en)
*
|
2009-10-13 |
2013-12-24 |
Skorpios Technologies, Inc. |
Method and system for hybrid integration of a tunable laser
|
US8559470B2
(en)
|
2009-10-13 |
2013-10-15 |
Skorpios Technologies, Inc. |
Method and system for hybrid integration of a tunable laser and a phase modulator
|
FR2953328B1
(en)
|
2009-12-01 |
2012-03-30 |
S O I Tec Silicon On Insulator Tech |
HETEROSTRUCTURE FOR ELECTRONIC POWER COMPONENTS, OPTOELECTRONIC OR PHOTOVOLTAIC COMPONENTS
|
US9012253B2
(en)
*
|
2009-12-16 |
2015-04-21 |
Micron Technology, Inc. |
Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
|
US8748288B2
(en)
|
2010-02-05 |
2014-06-10 |
International Business Machines Corporation |
Bonded structure with enhanced adhesion strength
|
JP5652742B2
(en)
*
|
2010-02-12 |
2015-01-14 |
日本電気硝子株式会社 |
Tempered plate glass and manufacturing method thereof
|
JP5644129B2
(en)
*
|
2010-02-12 |
2014-12-24 |
日本電気硝子株式会社 |
Tempered plate glass and manufacturing method thereof
|
WO2011109811A2
(en)
*
|
2010-03-05 |
2011-09-09 |
Alta Devices, Inc. |
Substrate clean solution for copper contamination removal
|
EP2654075B1
(en)
*
|
2010-03-31 |
2016-09-28 |
EV Group E. Thallner GmbH |
Method for permanently connecting two metal surfaces
|
US9558954B2
(en)
*
|
2010-04-22 |
2017-01-31 |
Luminus Devices, Inc. |
Selective wet etching and textured surface planarization processes
|
KR101039880B1
(en)
*
|
2010-04-28 |
2011-06-09 |
엘지이노텍 주식회사 |
Light emitting device, method for fabricating the same and light emitting device package
|
US8513120B2
(en)
*
|
2010-04-29 |
2013-08-20 |
Medtronic, Inc. |
Gold-tin etch using combination of halogen plasma and wet etch
|
US8536022B2
(en)
*
|
2010-05-19 |
2013-09-17 |
Koninklijke Philips N.V. |
Method of growing composite substrate using a relaxed strained layer
|
JP2012033689A
(en)
*
|
2010-07-30 |
2012-02-16 |
Sumitomo Electric Device Innovations Inc |
Manufacturing method of semiconductor device
|
US8563334B2
(en)
*
|
2010-09-14 |
2013-10-22 |
Tsmc Solid State Lighting Ltd. |
Method to remove sapphire substrate
|
FR2967812B1
(en)
*
|
2010-11-19 |
2016-06-10 |
S O I Tec Silicon On Insulator Tech |
ELECTRONIC DEVICE FOR RADIOFREQUENCY OR POWER APPLICATIONS AND METHOD OF MANUFACTURING SUCH A DEVICE
|
US8476146B2
(en)
*
|
2010-12-03 |
2013-07-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Reducing wafer distortion through a low CTE layer
|
US9922967B2
(en)
|
2010-12-08 |
2018-03-20 |
Skorpios Technologies, Inc. |
Multilevel template assisted wafer bonding
|
US8222084B2
(en)
|
2010-12-08 |
2012-07-17 |
Skorpios Technologies, Inc. |
Method and system for template assisted wafer bonding
|
US8735191B2
(en)
|
2012-01-04 |
2014-05-27 |
Skorpios Technologies, Inc. |
Method and system for template assisted wafer bonding using pedestals
|
US8482103B2
(en)
*
|
2010-12-09 |
2013-07-09 |
Industrial Technology Research Institute |
Nitride semiconductor template and fabricating method thereof
|
US9082948B2
(en)
|
2011-02-03 |
2015-07-14 |
Soitec |
Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
|
US8436363B2
(en)
|
2011-02-03 |
2013-05-07 |
Soitec |
Metallic carrier for layer transfer and methods for forming the same
|
US9142412B2
(en)
|
2011-02-03 |
2015-09-22 |
Soitec |
Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
|
FR2971620A1
(en)
*
|
2011-02-11 |
2012-08-17 |
Soitec Silicon On Insulator |
Fabricating epitaxial layer on semiconductor substrate in the fabrication of e.g. Schottky diode, by providing substrate, forming epitaxial layer in contact with seed layer epitaxy process, and adjusting lattice parameters of layers
|
US9184228B2
(en)
*
|
2011-03-07 |
2015-11-10 |
Sumitomo Electric Industries, Ltd. |
Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
|
FI20115255A0
(en)
*
|
2011-03-14 |
2011-03-14 |
Optogan Oy |
Composite semiconductor substrate, semiconductor device, and manufacturing process
|
US9269870B2
(en)
*
|
2011-03-17 |
2016-02-23 |
Epistar Corporation |
Light-emitting device with intermediate layer
|
WO2012142177A2
(en)
*
|
2011-04-11 |
2012-10-18 |
Ndsu Research Foundation |
Selective laser-assisted transfer of discrete components
|
TWI459592B
(en)
*
|
2011-04-26 |
2014-11-01 |
Univ Nat Chiao Tung |
A thin-film light-emitting diode with nano-scale epitaxial lateral growth and a method for fabricating the same
|
EP2702616B1
(en)
*
|
2011-04-29 |
2022-06-29 |
Amberwave, Inc. |
Thin film intermetallic bond
|
US8912017B2
(en)
*
|
2011-05-10 |
2014-12-16 |
Ostendo Technologies, Inc. |
Semiconductor wafer bonding incorporating electrical and optical interconnects
|
JP4989773B1
(en)
*
|
2011-05-16 |
2012-08-01 |
株式会社東芝 |
Semiconductor light emitting device
|
US8623734B2
(en)
|
2011-06-01 |
2014-01-07 |
International Business Machines Corporation |
Method to selectively grow phase change material inside a via hole
|
CN102214753A
(en)
*
|
2011-06-02 |
2011-10-12 |
中国科学院半导体研究所 |
LED (light-emitting diode) with GaN (gallium nitride)-based vertical structure using grapheme film current extension layer
|
US20120252192A1
(en)
*
|
2011-07-08 |
2012-10-04 |
Trustees Of Dartmouth College |
Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon
|
US8916455B2
(en)
|
2011-07-08 |
2014-12-23 |
Solar Tectic Llc |
Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon
|
RU2469433C1
(en)
|
2011-07-13 |
2012-12-10 |
Юрий Георгиевич Шретер |
Method for laser separation of epitaxial film or layer of epitaxial film from growth substrate of epitaxial semiconductor structure (versions)
|
CN103650171B
(en)
*
|
2011-07-15 |
2018-09-18 |
亮锐控股有限公司 |
Semiconductor device is attached to the method for supporting substrate
|
US9224904B1
(en)
*
|
2011-07-24 |
2015-12-29 |
Ananda Kumar |
Composite substrates of silicon and ceramic
|
US9064980B2
(en)
*
|
2011-08-25 |
2015-06-23 |
Palo Alto Research Center Incorporated |
Devices having removed aluminum nitride sections
|
US9977188B2
(en)
|
2011-08-30 |
2018-05-22 |
Skorpios Technologies, Inc. |
Integrated photonics mode expander
|
US9097846B2
(en)
*
|
2011-08-30 |
2015-08-04 |
Skorpios Technologies, Inc. |
Integrated waveguide coupler
|
US9653313B2
(en)
*
|
2013-05-01 |
2017-05-16 |
Sensor Electronic Technology, Inc. |
Stress relieving semiconductor layer
|
US9330906B2
(en)
*
|
2013-05-01 |
2016-05-03 |
Sensor Electronic Technology, Inc. |
Stress relieving semiconductor layer
|
US10032956B2
(en)
|
2011-09-06 |
2018-07-24 |
Sensor Electronic Technology, Inc. |
Patterned substrate design for layer growth
|
EP2761677B1
(en)
*
|
2011-09-30 |
2019-08-21 |
Microlink Devices, Inc. |
Light emitting diode fabricated by epitaxial lift-off
|
US9755023B2
(en)
*
|
2011-09-30 |
2017-09-05 |
The University Of Kentucky Research Foundation |
Photoelectrochemical cell including Ga(Sbx)N1-x semiconductor electrode
|
JP5724819B2
(en)
*
|
2011-10-17 |
2015-05-27 |
日立金属株式会社 |
Nitride semiconductor growth substrate and manufacturing method thereof, nitride semiconductor epitaxial substrate, and nitride semiconductor device
|
JP2013089741A
(en)
|
2011-10-18 |
2013-05-13 |
Renesas Electronics Corp |
Semiconductor device, semiconductor substrate, semiconductor device manufacturing method, and semiconductor substrate manufacturing method
|
US20130099277A1
(en)
*
|
2011-10-25 |
2013-04-25 |
The Regents Of The University Of California |
SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES
|
US8573469B2
(en)
|
2011-11-18 |
2013-11-05 |
LuxVue Technology Corporation |
Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
|
US8646505B2
(en)
|
2011-11-18 |
2014-02-11 |
LuxVue Technology Corporation |
Micro device transfer head
|
US8349116B1
(en)
|
2011-11-18 |
2013-01-08 |
LuxVue Technology Corporation |
Micro device transfer head heater assembly and method of transferring a micro device
|
US8426227B1
(en)
|
2011-11-18 |
2013-04-23 |
LuxVue Technology Corporation |
Method of forming a micro light emitting diode array
|
US8633094B2
(en)
|
2011-12-01 |
2014-01-21 |
Power Integrations, Inc. |
GaN high voltage HFET with passivation plus gate dielectric multilayer structure
|
US8940620B2
(en)
|
2011-12-15 |
2015-01-27 |
Power Integrations, Inc. |
Composite wafer for fabrication of semiconductor devices
|
JP5976678B2
(en)
*
|
2011-12-20 |
2016-08-24 |
株式会社東芝 |
Ceramic copper circuit board
|
WO2013093590A1
(en)
*
|
2011-12-23 |
2013-06-27 |
Soitec |
Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
|
US20130160702A1
(en)
*
|
2011-12-23 |
2013-06-27 |
Soitec |
Methods of growing iii-v semiconductor materials, and related systems
|
FR2985853B1
(en)
*
|
2012-01-16 |
2015-03-06 |
Soitec Silicon On Insulator |
METHODS OF MAKING SEMICONDUCTOR STRUCTURES USING THERMAL SPRAY PROCESSES, AND SEMICONDUCTOR STRUCTURES MANUFACTURED USING SAID METHODS
|
CN105336748B
(en)
|
2012-01-18 |
2019-05-03 |
斯考皮欧技术有限公司 |
The Vertical collection of CMOS electronic device and photonic device
|
EP2823515A4
(en)
*
|
2012-03-06 |
2015-08-19 |
Soraa Inc |
Light emitting diodes with low refractive index material layers to reduce light guiding effects
|
US8916483B2
(en)
|
2012-03-09 |
2014-12-23 |
Soitec |
Methods of forming semiconductor structures including III-V semiconductor material using substrates comprising molybdenum
|
US9202983B2
(en)
|
2012-03-16 |
2015-12-01 |
Epistar Corporation |
Light-emitting device
|
US9548332B2
(en)
|
2012-04-27 |
2017-01-17 |
Apple Inc. |
Method of forming a micro LED device with self-aligned metallization stack
|
US9450152B2
(en)
|
2012-05-29 |
2016-09-20 |
Micron Technology, Inc. |
Solid state transducer dies having reflective features over contacts and associated systems and methods
|
US9312303B2
(en)
*
|
2012-06-14 |
2016-04-12 |
Epistar Corporation |
Light-emitting device and method for manufacturing the same
|
WO2014054428A1
(en)
*
|
2012-10-01 |
2014-04-10 |
シャープ株式会社 |
Semiconductor device
|
WO2014057748A1
(en)
*
|
2012-10-12 |
2014-04-17 |
住友電気工業株式会社 |
Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method
|
JP6322890B2
(en)
*
|
2013-02-18 |
2018-05-16 |
住友電気工業株式会社 |
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
|
US8828762B2
(en)
|
2012-10-18 |
2014-09-09 |
International Business Machines Corporation |
Carbon nanostructure device fabrication utilizing protect layers
|
CN104756245B
(en)
*
|
2012-10-26 |
2017-09-22 |
Rfhic公司 |
The semiconductor devices and its manufacture method of reliability and working life with raising
|
US8841177B2
(en)
|
2012-11-15 |
2014-09-23 |
International Business Machines Corporation |
Co-integration of elemental semiconductor devices and compound semiconductor devices
|
CN104995713A
(en)
|
2013-02-18 |
2015-10-21 |
住友电气工业株式会社 |
Group iii-nitride composite substrate and method of producing same, layered group iii-nitride composite substrate, as well as group iii-nitride semiconductor device and method of producing same
|
US8796082B1
(en)
*
|
2013-02-22 |
2014-08-05 |
The United States Of America As Represented By The Scretary Of The Army |
Method of optimizing a GA—nitride device material structure for a frequency multiplication device
|
US8928037B2
(en)
|
2013-02-28 |
2015-01-06 |
Power Integrations, Inc. |
Heterostructure power transistor with AlSiN passivation layer
|
US9417515B2
(en)
|
2013-03-14 |
2016-08-16 |
Applied Materials, Inc. |
Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
|
US20140272684A1
(en)
|
2013-03-12 |
2014-09-18 |
Applied Materials, Inc. |
Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
|
US9632411B2
(en)
|
2013-03-14 |
2017-04-25 |
Applied Materials, Inc. |
Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
|
US9612521B2
(en)
|
2013-03-12 |
2017-04-04 |
Applied Materials, Inc. |
Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
|
US9354508B2
(en)
|
2013-03-12 |
2016-05-31 |
Applied Materials, Inc. |
Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
|
US10060049B2
(en)
*
|
2013-03-14 |
2018-08-28 |
Roger Ian Lounsbury |
Method of making a joint between sapphire parts
|
US9096050B2
(en)
*
|
2013-04-02 |
2015-08-04 |
International Business Machines Corporation |
Wafer scale epitaxial graphene transfer
|
US10460952B2
(en)
*
|
2013-05-01 |
2019-10-29 |
Sensor Electronic Technology, Inc. |
Stress relieving semiconductor layer
|
US20160172327A1
(en)
*
|
2013-06-21 |
2016-06-16 |
University Of Connecticut |
Low-Temperature Bonding and Sealing With Spaced Nanorods
|
CN105899976A
(en)
*
|
2013-07-25 |
2016-08-24 |
达特茅斯学院托管理事会 |
Systems and methods using metal nanostructures in spectrally selective absorbers
|
JP6052420B2
(en)
*
|
2013-08-27 |
2016-12-27 |
富士電機株式会社 |
Manufacturing method of semiconductor device
|
GB201319117D0
(en)
*
|
2013-10-30 |
2013-12-11 |
Element Six Technologies Us Corp |
Semiconductor device structures comprising polycrystalline CVD Diamond with improved near-substrate thermal conductivity
|
KR102086360B1
(en)
*
|
2013-11-07 |
2020-03-09 |
삼성전자주식회사 |
Method for forming an electrode on n-type nitride semiconductor, nitride semiconductor device and method for manufacutring the same
|
JP6282094B2
(en)
*
|
2013-11-27 |
2018-02-21 |
キヤノン株式会社 |
Surface emitting laser and optical coherence tomography using the same
|
US9058990B1
(en)
|
2013-12-19 |
2015-06-16 |
International Business Machines Corporation |
Controlled spalling of group III nitrides containing an embedded spall releasing plane
|
US9664855B2
(en)
|
2014-03-07 |
2017-05-30 |
Skorpios Technologies, Inc. |
Wide shoulder, high order mode filter for thick-silicon waveguides
|
US10003173B2
(en)
|
2014-04-23 |
2018-06-19 |
Skorpios Technologies, Inc. |
Widely tunable laser control
|
EP3149522A4
(en)
|
2014-05-27 |
2018-02-21 |
Skorpios Technologies, Inc. |
Waveguide mode expander using amorphous silicon
|
US9787053B2
(en)
*
|
2014-06-20 |
2017-10-10 |
PlayNitride Inc. |
Laser diode chip and flip chip type laser diode package structure
|
US9209142B1
(en)
|
2014-09-05 |
2015-12-08 |
Skorpios Technologies, Inc. |
Semiconductor bonding with compliant resin and utilizing hydrogen implantation for transfer-wafer removal
|
JP2017533574A
(en)
|
2014-09-18 |
2017-11-09 |
インテル・コーポレーション |
Wurtzite heteroepitaxial structure with inclined sidewall cut surface for defect propagation control in silicon CMOS compatible semiconductor devices
|
KR102203497B1
(en)
|
2014-09-25 |
2021-01-15 |
인텔 코포레이션 |
Iii-n epitaxial device structures on free standing silicon mesas
|
EP3221886A4
(en)
|
2014-11-18 |
2018-07-11 |
Intel Corporation |
Cmos circuits using n-channel and p-channel gallium nitride transistors
|
US10483152B2
(en)
|
2014-11-18 |
2019-11-19 |
Globalwafers Co., Ltd. |
High resistivity semiconductor-on-insulator wafer and a method of manufacturing
|
WO2016081367A1
(en)
|
2014-11-18 |
2016-05-26 |
Sunedison Semiconductor Limited |
HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION
|
US10601071B2
(en)
|
2014-12-02 |
2020-03-24 |
Polyplus Battery Company |
Methods of making and inspecting a web of vitreous lithium sulfide separator sheet and lithium electrode assemblies
|
US10164289B2
(en)
|
2014-12-02 |
2018-12-25 |
Polyplus Battery Company |
Vitreous solid electrolyte sheets of Li ion conducting sulfur-based glass and associated structures, cells and methods
|
US10147968B2
(en)
|
2014-12-02 |
2018-12-04 |
Polyplus Battery Company |
Standalone sulfide based lithium ion-conducting glass solid electrolyte and associated structures, cells and methods
|
US11749834B2
(en)
|
2014-12-02 |
2023-09-05 |
Polyplus Battery Company |
Methods of making lithium ion conducting sulfide glass
|
US10056456B2
(en)
|
2014-12-18 |
2018-08-21 |
Intel Corporation |
N-channel gallium nitride transistors
|
US10243105B2
(en)
|
2015-02-10 |
2019-03-26 |
iBeam Materials, Inc. |
Group-III nitride devices and systems on IBAD-textured substrates
|
USRE49869E1
(en)
|
2015-02-10 |
2024-03-12 |
iBeam Materials, Inc. |
Group-III nitride devices and systems on IBAD-textured substrates
|
KR102547293B1
(en)
|
2015-02-10 |
2023-06-23 |
아이빔 머티리얼스 인코퍼레이티드 |
Ion Beam Assisted Deposition Epitaxial Hexagonal Materials on Textured Substrates
|
US10018579B1
(en)
|
2015-02-18 |
2018-07-10 |
Kla-Tencor Corporation |
System and method for cathodoluminescence-based semiconductor wafer defect inspection
|
WO2016140850A1
(en)
|
2015-03-03 |
2016-09-09 |
Sunedison Semiconductor Limited |
Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
|
US9829631B2
(en)
|
2015-04-20 |
2017-11-28 |
Skorpios Technologies, Inc. |
Vertical output couplers for photonic devices
|
CN107949914B
(en)
|
2015-05-19 |
2022-01-18 |
英特尔公司 |
Semiconductor device with raised doped crystal structure
|
US10332782B2
(en)
|
2015-06-01 |
2019-06-25 |
Globalwafers Co., Ltd. |
Method of manufacturing silicon germanium-on-insulator
|
KR102349040B1
(en)
*
|
2015-06-26 |
2022-01-10 |
인텔 코포레이션 |
Hetero-epitaxial structures with high temperature stable substrate interface material
|
US9778183B2
(en)
|
2015-08-20 |
2017-10-03 |
Industrial Technology Research Institute |
Sensing chip
|
JP2017050316A
(en)
*
|
2015-08-31 |
2017-03-09 |
富士ゼロックス株式会社 |
Manufacturing method for light-emitting element
|
US10529616B2
(en)
|
2015-11-20 |
2020-01-07 |
Globalwafers Co., Ltd. |
Manufacturing method of smoothing a semiconductor surface
|
WO2017111869A1
(en)
|
2015-12-24 |
2017-06-29 |
Intel Corporation |
Transition metal dichalcogenides (tmdcs) over iii-nitride heteroepitaxial layers
|
WO2017155806A1
(en)
|
2016-03-07 |
2017-09-14 |
Sunedison Semiconductor Limited |
Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
|
US11114332B2
(en)
|
2016-03-07 |
2021-09-07 |
Globalwafers Co., Ltd. |
Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
|
WO2017155804A1
(en)
*
|
2016-03-07 |
2017-09-14 |
Sunedison Semiconductor Limited |
Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
|
US10373830B2
(en)
|
2016-03-08 |
2019-08-06 |
Ostendo Technologies, Inc. |
Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing
|
EP3219832B1
(en)
*
|
2016-03-16 |
2020-06-24 |
Thorlabs Inc. |
Method for manufacturing direct-bonded optical coatings
|
US10707536B2
(en)
|
2016-05-10 |
2020-07-07 |
Polyplus Battery Company |
Solid-state laminate electrode assemblies and methods of making
|
US11142844B2
(en)
|
2016-06-08 |
2021-10-12 |
Globalwafers Co., Ltd. |
High resistivity single crystal silicon ingot and wafer having improved mechanical strength
|
US10510582B2
(en)
|
2016-06-14 |
2019-12-17 |
QROMIS, Inc. |
Engineered substrate structure
|
JP6626607B2
(en)
*
|
2016-06-14 |
2019-12-25 |
クロミス,インコーポレイテッド |
Designed substrate structures for power and RF applications
|
US10297445B2
(en)
|
2016-06-14 |
2019-05-21 |
QROMIS, Inc. |
Engineered substrate structure for power and RF applications
|
US10269617B2
(en)
|
2016-06-22 |
2019-04-23 |
Globalwafers Co., Ltd. |
High resistivity silicon-on-insulator substrate comprising an isolation region
|
US9966301B2
(en)
*
|
2016-06-27 |
2018-05-08 |
New Fab, LLC |
Reduced substrate effects in monolithically integrated RF circuits
|
US10186630B2
(en)
*
|
2016-08-02 |
2019-01-22 |
QMAT, Inc. |
Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
|
DE102016114550B4
(en)
|
2016-08-05 |
2021-10-21 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Component and method for manufacturing components
|
US10249786B2
(en)
*
|
2016-11-29 |
2019-04-02 |
Palo Alto Research Center Incorporated |
Thin film and substrate-removed group III-nitride based devices and method
|
US10355120B2
(en)
*
|
2017-01-18 |
2019-07-16 |
QROMIS, Inc. |
Gallium nitride epitaxial structures for power devices
|
US10622468B2
(en)
|
2017-02-21 |
2020-04-14 |
QROMIS, Inc. |
RF device integrated on an engineered substrate
|
US10600635B2
(en)
*
|
2017-04-20 |
2020-03-24 |
Elyakim Kassel |
Method and apparatus for a semiconductor-on-higher thermal conductive multi-layer composite wafer
|
CN110506338B
(en)
*
|
2017-04-24 |
2023-08-04 |
苏州晶湛半导体有限公司 |
Semiconductor structure and method for preparing semiconductor structure
|
US11043465B2
(en)
*
|
2017-05-11 |
2021-06-22 |
Sumitomo Electric Industries, Ltd. |
Semiconductor device
|
WO2019018386A1
(en)
*
|
2017-07-19 |
2019-01-24 |
Polyplus Battery Company |
Solid-state laminate electrode assembly fabrication and making thin extruded lithium metal foils
|
US10868293B2
(en)
|
2017-07-07 |
2020-12-15 |
Polyplus Battery Company |
Treating sulfide glass surfaces and making solid state laminate electrode assemblies
|
US10629950B2
(en)
|
2017-07-07 |
2020-04-21 |
Polyplus Battery Company |
Encapsulated sulfide glass solid electrolytes and solid-state laminate electrode assemblies
|
US10862171B2
(en)
|
2017-07-19 |
2020-12-08 |
Polyplus Battery Company |
Solid-state laminate electrode assembly fabrication and making thin extruded lithium metal foils
|
CN107481982B
(en)
*
|
2017-08-08 |
2019-08-16 |
中国科学院半导体研究所 |
AlN substrate high efficiency and heat radiation HEMT device and preparation method thereof
|
US10840264B2
(en)
|
2017-09-28 |
2020-11-17 |
International Business Machines Corporation |
Ultra-thin-body GaN on insulator device
|
WO2019066953A1
(en)
|
2017-09-29 |
2019-04-04 |
Intel Corporation |
Group iii-nitride (iii-n) devices with reduced contact resistance and their methods of fabrication
|
US10649148B2
(en)
|
2017-10-25 |
2020-05-12 |
Skorpios Technologies, Inc. |
Multistage spot size converter in silicon photonics
|
US11393765B2
(en)
|
2017-11-16 |
2022-07-19 |
Samsung Electronics Co., Ltd. |
Heterogeneous integrated circuit for short wavelengths
|
US10564356B2
(en)
|
2017-11-16 |
2020-02-18 |
Samsung Electronics Co., Ltd. |
Heterogeneous integrated circuit for short wavelengths
|
FR3074608B1
(en)
*
|
2017-12-05 |
2019-12-06 |
Soitec |
PROCESS FOR THE PREPARATION OF A RESIDUE OF A DONOR SUBSTRATE, SUBSTRATE OBTAINED AT THE END OF THIS PROCESS, AND USE OF SUCH A SUBSTRATE
|
US10504716B2
(en)
*
|
2018-03-15 |
2019-12-10 |
Taiwan Semiconductor Manufacturing Company Ltd. |
Method for manufacturing semiconductor device and manufacturing method of the same
|
JP7123182B2
(en)
|
2018-06-08 |
2022-08-22 |
グローバルウェーハズ カンパニー リミテッド |
Silicon foil layer transfer method
|
EP3582271B1
(en)
*
|
2018-06-14 |
2021-03-17 |
Nichia Corporation |
Light emitting device and method of manufacturing same
|
JP7044161B2
(en)
*
|
2018-08-09 |
2022-03-30 |
信越化学工業株式会社 |
Manufacturing method of GaN laminated board
|
US11365492B2
(en)
*
|
2018-09-11 |
2022-06-21 |
Thorlabs, Inc. |
Substrate-transferred stacked optical coatings
|
TWI698915B
(en)
*
|
2019-01-18 |
2020-07-11 |
國立交通大學 |
Process method for heterogeneous epitaxial semiconductor material on mica sheet
|
US11360263B2
(en)
|
2019-01-31 |
2022-06-14 |
Skorpios Technologies. Inc. |
Self-aligned spot size converter
|
US11127595B2
(en)
*
|
2019-09-19 |
2021-09-21 |
Microsoft Technology Licensing, Llc |
Method for bonding a semiconductor substrate to a carrier
|
US11631889B2
(en)
|
2020-01-15 |
2023-04-18 |
Polyplus Battery Company |
Methods and materials for protection of sulfide glass solid electrolytes
|
CN113658849A
(en)
*
|
2021-07-06 |
2021-11-16 |
华为技术有限公司 |
Composite substrate, manufacturing method thereof, semiconductor device and electronic equipment
|
CN113658850A
(en)
*
|
2021-07-06 |
2021-11-16 |
华为技术有限公司 |
Composite substrate, manufacturing method thereof, semiconductor device and electronic equipment
|
CN114717660B
(en)
*
|
2022-04-06 |
2023-03-24 |
松山湖材料实验室 |
Aluminum nitride single crystal composite substrate and manufacturing method, application and stress and/or polarization control method thereof
|
CN115527836B
(en)
*
|
2022-09-28 |
2024-01-26 |
松山湖材料实验室 |
Preparation method of aluminum nitride composite substrate
|
CN115954378B
(en)
*
|
2023-03-15 |
2023-06-02 |
江西兆驰半导体有限公司 |
Gallium nitride power device and preparation method thereof
|